JPH01218108A - High frequency oscillator - Google Patents
High frequency oscillatorInfo
- Publication number
- JPH01218108A JPH01218108A JP4312788A JP4312788A JPH01218108A JP H01218108 A JPH01218108 A JP H01218108A JP 4312788 A JP4312788 A JP 4312788A JP 4312788 A JP4312788 A JP 4312788A JP H01218108 A JPH01218108 A JP H01218108A
- Authority
- JP
- Japan
- Prior art keywords
- saw
- delay element
- msw
- amplifier
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003068 static effect Effects 0.000 claims description 12
- 238000010897 surface acoustic wave method Methods 0.000 claims description 6
- 230000010355 oscillation Effects 0.000 abstract description 18
- 230000000644 propagated effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、広帯域出力と高安定出力を切換えることので
きる高周波発振回路に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a high frequency oscillation circuit that can switch between wideband output and highly stable output.
(従来の技術)
従来から高安定な固定周波数のマイクロ波信号源として
は弾性表面波(Surface Acoustic W
ave ;以下SAWと呼ぶ)デバイスを用いたものが
ある。(Prior Art) Surface acoustic waves (Surface Acoustic Waves) have conventionally been used as highly stable fixed frequency microwave signal sources.
There is one using a device (hereinafter referred to as SAW).
他方、可変周波数のマイクロ波信号源としてはYIG薄
膜中を伝搬する静磁波(静磁波: Magnet。On the other hand, as a variable frequency microwave signal source, a magnetostatic wave (magnetic wave: Magnet) propagating in a YIG thin film is used.
5tatic Wave : MSW)素子を用いたも
のがある。There is one using a 5tatic wave (MSW) element.
第2図に静磁波伝搬の原理図を示す、YIG(イツトリ
ウム−鉄−ガーネット)単結晶41に矢印42の方向に
直流磁界HOが印加されると、このYIG単結晶41の
磁気モーメントは直流磁界14゜の方向に並ぶ。このY
IG単結晶41にはトランスジューサ43からマイクロ
波が供給される。その結果磁気モーメントは45に示す
ように歳差運動を始める。この歳差運動の回転周波数を
磁気共鳴周波数という。マイクロ波の周波数がこの磁気
共鳴周波数に接近すると、マイクロ波は歳差運動に引込
まれ速度が急に落ちる。このようなマイクロ波を特に静
磁波といい、その共鳴周波数は直流磁界H,に比例する
。静磁波44の連行先にさらに43と同様のトランスジ
ューサを設けることにより、静磁波を再び電気信号に変
えることができ、このようにして静磁波遅延素子が形成
される。FIG. 2 shows a diagram of the principle of magnetostatic wave propagation. When a DC magnetic field HO is applied to a YIG (yttrium-iron-garnet) single crystal 41 in the direction of an arrow 42, the magnetic moment of this YIG single crystal 41 changes from the DC magnetic field. Line up in a 14° direction. This Y
Microwaves are supplied to the IG single crystal 41 from a transducer 43. As a result, the magnetic moment begins to precess as shown at 45. The rotational frequency of this precession is called the magnetic resonance frequency. When the microwave frequency approaches this magnetic resonance frequency, the microwave is pulled into precession and its speed suddenly drops. Such microwaves are particularly called magnetostatic waves, and their resonance frequency is proportional to the DC magnetic field H. By further providing a transducer similar to 43 at the destination of the magnetostatic wave 44, the magnetostatic wave can be converted into an electric signal again, thus forming a magnetostatic wave delay element.
(発明が解決しようとする課題)
例えば安価な信号源を用いて静磁波発振器で広帯域掃引
を行うとともに、S A W発振器の基本波および高調
波を利用して周波数の校正を行う場合等のように、2種
のマイクロ波信号を切換使用したい場合、両売振器を別
個に設けて高周波スイッチで切換えるようにすればよい
が、共通な部分が多いので構成上無駄が生じる。(Problem to be solved by the invention) For example, when wideband sweeping is performed with a magnetostatic wave oscillator using an inexpensive signal source, and frequency calibration is performed using the fundamental wave and harmonics of the SAW oscillator. In addition, if it is desired to switch between two types of microwave signals, it is possible to separately provide both venders and switch between them using a high frequency switch, but since there are many common parts, this is wasteful in terms of construction.
本発明は上記のような課題を解決するためになされたも
ので、SAW発振器および静磁波発振器の出力を切換え
ることのできる高周波次発振器を簡単な構成で実現する
ことを目的とする。The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to realize a high-frequency oscillator with a simple configuration that can switch the output of a SAW oscillator and a magnetostatic wave oscillator.
(課題を解決するための手段)
本発明に係る高周波次発振器は静磁波遅延素子と、この
静磁波遅延素子の入力トランスジューサ及び出力トラン
ジューサを共用する弾性表面波遅延素子と、前記出力ト
ランスジューサがらの出力信号を増幅して前記入力トラ
ンスジューサに出力する可変ゲイン増幅器と、前記静磁
波遅延素子に静磁場を印加する静磁場印加手段と、前記
可変ゲイン増幅器のゲインを制御するゲイン制御手段と
を備え、静磁波遅延素子と弾性表面波遅延素子とを切換
動作するように構成したことを特徴とする。(Means for Solving the Problems) A high frequency order oscillator according to the present invention includes a magnetostatic wave delay element, a surface acoustic wave delay element that shares the input transducer and output transducer of the magnetostatic wave delay element, and the output transducer. A variable gain amplifier that amplifies an output signal and outputs it to the input transducer, a static magnetic field applying means that applies a static magnetic field to the magnetostatic wave delay element, and a gain control means that controls the gain of the variable gain amplifier, The present invention is characterized in that it is configured to switch between a magnetostatic wave delay element and a surface acoustic wave delay element.
(作用)
S A W発振器および静磁波発振器がトランスジュー
サ及び増幅器を共用することにより、構成を簡単にでき
る。(Function) The configuration can be simplified because the SAW oscillator and the magnetostatic wave oscillator share a transducer and an amplifier.
(実施例)
以下本発明を図面を用いて詳しく説明する。第1図は本
発明に係る高周波発振器の一実施例を示す構成説明図で
ある。SAW素子1において、11は接地用の導体基板
、12はこの基板ll上(図では基板11の下面上)に
形成されるL i NbOコからなるSAWの伝搬路で
ある。静磁波遅延線2において、21はYIG (イツ
トリウム−秩−カーネット)からなる静磁波の伝m路(
以下Nl5W伝搬路と呼ぶ)、22はMSW伝搬路21
上に設けられるマイクロ波入力用のトランスジューサ、
23は同じく出力用のトランスジューサである。図では
MSW伝搬路21とSAW伝搬路12の間隔が空いてい
るように示されているが、実際には破線矢印のようにト
ランスジューサ22゜23を間に挟んで一体とする。4
は出力トランスジューサ23のマイクロ波出力を入力し
MSW発振ループを形成するための可変ゲイン型の増幅
器、5はその第1のボートを介して増幅器4の出力を入
力し第2のボートを介して入力トランスジューサ22へ
出力するとともに第3のボートを介して外部へマイクロ
波を出力する方向性結合器、6は増幅器4のゲイン制御
端子にバイアス人力EaまたはEbのいずれがを選択し
て印加する切換スイッチである。31.32はMSW伝
搬路21に静磁場BOを印加するための静磁場印加手段
を構成するコイル、7はコイル31.32を駆動するコ
イル駆動回路、8は駆動回路7とコイル31,32の間
に接続しオンオフするスイッチである。(Example) The present invention will be explained in detail below using the drawings. FIG. 1 is a configuration explanatory diagram showing one embodiment of a high frequency oscillator according to the present invention. In the SAW element 1, 11 is a conductive substrate for grounding, and 12 is a SAW propagation path made of LiNbO formed on this substrate ll (in the figure, on the lower surface of the substrate 11). In the magnetostatic wave delay line 2, 21 is the propagation path (m) of the magnetostatic wave made of YIG (yttrium-Chichi-Carnet)
(hereinafter referred to as Nl5W propagation path), 22 is MSW propagation path 21
a transducer for microwave input provided on the
Similarly, 23 is an output transducer. In the figure, the MSW propagation path 21 and the SAW propagation path 12 are shown to be spaced apart, but in reality, they are integrated with transducers 22 and 23 sandwiched between them, as indicated by the broken line arrows. 4
5 is a variable gain type amplifier for inputting the microwave output of the output transducer 23 to form an MSW oscillation loop; 5 inputs the output of the amplifier 4 through its first port, and inputs it through the second port. A directional coupler outputs the microwave to the transducer 22 and also outputs the microwave to the outside via a third port. 6 is a changeover switch that selects and applies bias manual power Ea or Eb to the gain control terminal of the amplifier 4. It is. 31 and 32 are coils forming a static magnetic field applying means for applying a static magnetic field BO to the MSW propagation path 21, 7 is a coil drive circuit for driving the coils 31 and 32, and 8 is a coil for driving the drive circuit 7 and the coils 31 and 32. This is a switch that is connected between the two to turn it on and off.
上記の構成の高周波発振器の動作を次に説明する。上記
装置において、SAW遅延線1の損失しSはM S W
遅延線2の損失LMより大きくなるように設計する。す
なわち
LM <Ls ・・・(1)また出力トラン
スジューサ23−増幅器4→入力トランスジューサ22
の間の損失の和をLとする。The operation of the high frequency oscillator having the above configuration will be explained next. In the above device, the loss S of the SAW delay line 1 is M S W
It is designed to be larger than the loss LM of delay line 2. That is, LM < Ls (1) Also, output transducer 23 - amplifier 4 → input transducer 22
Let L be the sum of losses between.
またバイアス人力Ea、Ebが接続するときの増幅器4
のゲインをそれぞれGa、Gbとすると、Ga <Gb
・・・(2)の関係がある。Also, amplifier 4 when bias human power Ea and Eb are connected
When the gains of are Ga and Gb, respectively, Ga < Gb
...There is the relationship (2).
次に各動作モードについて説明する。Next, each operation mode will be explained.
イ、MSW発振モード
スイッチ6でバイアス入力Eaを選択し、スイッチ8を
オンとすると、増幅器4のゲインはGaとなり、コイル
31.32に電流が流れて矢印13で示される静磁場B
0を発生し、
Li+L=Ga ・・・(3)なので、M S
W遅延素子2かM S W発振を行うが、L s十L
> G a ・= < 4 )なのでSAW
遅延素子12はSAW発振を行わない。10はMSW発
振時のM S Wの伝搬の様子を示す矢印である。B. When the bias input Ea is selected with the MSW oscillation mode switch 6 and the switch 8 is turned on, the gain of the amplifier 4 becomes Ga, current flows through the coils 31 and 32, and the static magnetic field B shown by the arrow 13
0, and Li+L=Ga...(3), so M S
W delay element 2 performs M SW oscillation, but L s + L
> Ga ・= < 4), so SAW
The delay element 12 does not perform SAW oscillation. 10 is an arrow indicating the state of propagation of MSW during MSW oscillation.
口、SAW発振モード
スイッチ6でバイアス人力Ebを選択し、スイッチ8を
オフとすると、増幅器4のゲインはGbとなり、コイル
31.32に電流が流れず静磁場B0が0となるのでM
SWが伝搬せず、M S W遅延素子2にMSW発振は
生じないが、
Ls +L=Gb −(5)
となるのでSAW遅延素子12はSAW発振を行う。9
はSAW発振時のSAWの伝搬の様子(正確にはSAW
伝搬路12の表面を伝搬)を示す矢印である。When the bias manual Eb is selected with the SAW oscillation mode switch 6 and the switch 8 is turned off, the gain of the amplifier 4 becomes Gb, and since no current flows through the coils 31 and 32 and the static magnetic field B0 becomes 0, M
Although the SW does not propagate and MSW oscillation does not occur in the MSW delay element 2, the SAW delay element 12 performs SAW oscillation because Ls + L = Gb - (5). 9
is the state of SAW propagation during SAW oscillation (more precisely, SAW
This is an arrow indicating the propagation (propagation on the surface of the propagation path 12).
上記各モードにおけるマイクロ波出力はいずれも方向性
結合器5を介して外部に取出される。The microwave outputs in each of the above modes are taken out to the outside via the directional coupler 5.
この様な構成の高周波発振器によれば、トランスジュー
サやアンプを共通に用いることができるので、構成が簡
単である。According to the high frequency oscillator having such a structure, the transducer and the amplifier can be used in common, so the structure is simple.
またMSWとSAWの切換も増幅器ゲイン及び静磁場強
度の変化により簡単に行うことができる。Furthermore, switching between MSW and SAW can be easily performed by changing the amplifier gain and static magnetic field strength.
なお上記の実施例において、SAW発振時にMSWが生
じりいようにするためには、必ずしも静磁場BOをOに
しなくてもよく、磁場B0を変えてMSWの発振周波数
を変化したときのMSW発振ループのループゲインを1
末溝とするような周波数特性の増幅器を用いてもよい。In the above embodiment, in order to prevent MSW from occurring during SAW oscillation, the static magnetic field BO does not necessarily have to be set to O, and the MSW oscillation when changing the oscillation frequency of MSW by changing the magnetic field B0 Set the loop gain of the loop to 1
An amplifier with frequency characteristics such as a groove at the end may be used.
またMSWモードとSAWモードとで増幅器ゲインの周
波数特性を切換え可能に構成すれば、増幅器ゲインの切
換のみで両モードを切換えることができ、コイル31の
オンオフスイッチ8を不要にできる。この場合に両遅延
素子の損失はLr1<Lsである必要はない。Furthermore, if the frequency characteristics of the amplifier gain are configured to be switchable between the MSW mode and the SAW mode, both modes can be switched simply by switching the amplifier gain, and the on/off switch 8 for the coil 31 can be made unnecessary. In this case, it is not necessary that the losses of both delay elements satisfy Lr1<Ls.
またSAW伝搬路12としてはLtNbOiに限らず、
水晶、LiTaO3等を用いることもできる。In addition, the SAW propagation path 12 is not limited to LtNbOi.
Crystal, LiTaO3, etc. can also be used.
また上記実施例では静磁場の印加方向をYIG面に垂直
として静磁前進#積波を励起しているが、これに限らず
、静磁場の印加方向を変えて静磁表面波や静磁後退体積
波を励起してもよい。In addition, in the above embodiment, the direction of application of the static magnetic field is perpendicular to the YIG plane to excite the magnetostatic forward #product wave, but this is not limitative. Volume waves may also be excited.
またマイクロ波以外の高周波発振を行わせることらでき
る。It is also possible to generate high frequency oscillations other than microwaves.
(発明の効果)
以上述べたように本発明によれば、高安定のSAW発振
器および広帯域の静磁波発振器の出力を切換えることの
できる高周波波発振器を簡単な構成で実現することがで
きる。(Effects of the Invention) As described above, according to the present invention, a high frequency wave oscillator capable of switching the output of a highly stable SAW oscillator and a broadband magnetostatic wave oscillator can be realized with a simple configuration.
第1図は本発明に係る高周波発振器の一実施例を示す構
成斜視図、第2図は静磁波素子の原理を示す説明図であ
る
1・・・弾性表面波遅延素子、2・・・静磁波遅延素子
、4・・・可変ゲイン増幅器、6・・・ゲイン制御手段
、22・・・入力トランスジューサ、23・・・出力ト
ランジューサ、31.32・・・静磁場印加手段。
第2 図
42 4SFig. 1 is a structural perspective view showing one embodiment of a high frequency oscillator according to the present invention, and Fig. 2 is an explanatory diagram showing the principle of a magnetostatic wave element. Magnetic wave delay element, 4... Variable gain amplifier, 6... Gain control means, 22... Input transducer, 23... Output transducer, 31.32... Static magnetic field application means. Figure 2 42 4S
Claims (1)
ジューサ及び出力トランジューサを、共用する弾性表面
波遅延素子と、前記出力トランスジューサからの出力信
号を増幅して前記入力トランスジューサに出力する可変
ゲイン増幅器と、前記静磁波遅延素子に静磁場を印加す
る静磁場印加手段と、前記可変ゲイン増幅器のゲインを
制御するゲイン制御手段とを備え、静磁波遅延素子と弾
性表面波遅延素子とを切換動作するように構成したこと
を特徴とする高周波発振器。A magnetostatic wave delay element, a surface acoustic wave delay element that shares an input transducer and an output transducer of the magnetostatic wave delay element, and a variable gain amplifier that amplifies an output signal from the output transducer and outputs it to the input transducer. , comprising a static magnetic field applying means for applying a static magnetic field to the magnetostatic wave delay element, and a gain control means for controlling the gain of the variable gain amplifier, and configured to switch between the magnetostatic wave delay element and the surface acoustic wave delay element. A high frequency oscillator characterized in that it is configured as follows.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4312788A JPH01218108A (en) | 1988-02-25 | 1988-02-25 | High frequency oscillator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4312788A JPH01218108A (en) | 1988-02-25 | 1988-02-25 | High frequency oscillator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01218108A true JPH01218108A (en) | 1989-08-31 |
Family
ID=12655179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4312788A Pending JPH01218108A (en) | 1988-02-25 | 1988-02-25 | High frequency oscillator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01218108A (en) |
-
1988
- 1988-02-25 JP JP4312788A patent/JPH01218108A/en active Pending
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