JPS62224101A - Magnetostatic wave filter bank - Google Patents
Magnetostatic wave filter bankInfo
- Publication number
- JPS62224101A JPS62224101A JP6904286A JP6904286A JPS62224101A JP S62224101 A JPS62224101 A JP S62224101A JP 6904286 A JP6904286 A JP 6904286A JP 6904286 A JP6904286 A JP 6904286A JP S62224101 A JPS62224101 A JP S62224101A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic field
- yig thin
- magnetic
- strip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 28
- 230000000694 effects Effects 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N Adamantane Natural products C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- ZPDRQAVGXHVGTB-UHFFFAOYSA-N gallium;gadolinium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Gd+3] ZPDRQAVGXHVGTB-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
Landscapes
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は静磁波を用いたマイクロ波信号処理デバイス
に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a microwave signal processing device using magnetostatic waves.
第2図は、例えば工E E E M T T −S D
igest(J、 D、 Adam 、 ” An E
pitaxial YIG 1O−Channel E
’1lter Bank″、 1982. p 78
−79 )に示された従来の静磁波フィルタパンクの概
略構造を示す斜視図であり、図において、(1)〜(3
)はガドリニウム・ガリウム・ガーネット基板上に液相
成長させた第1〜第3のストリップ形状YIG(イット
リクム・鋏・ガーネット)薄膜導波路、(4ンは先端(
5)を関数したマイクロストリップ線路により構成され
、第1〜第3のYIG薄膜導波路(1)〜(3)の片端
に交さする入力側トランスデユーサ、(6)〜(8)は
、先端(9)〜(11)を関数したマイクロストリップ
線路により構成された第1〜第3の出力側トランスデユ
ーサである。これら第1〜第3の出力側トランスデュー
サ(6)〜(8)は、第1〜第3のYIG薄膜導波路(
1)〜(3)の他方の端にそれぞれ交さするように配置
される。また、(12)は入出力側トランスデユーサ(
4)、(6)〜(8)に接続される同軸端子、(13)
はマイクロストリンプ線路を形成する誘電体基板、(1
4)は筐体、 (15)、(16)は磁石板、(17)
ハat鉄、(18) id磁石板(15)、(16)
および継鉄(17)よシ構成される磁気回路である。Figure 2 shows, for example, engineering E E M T T -S D
igest(J, D, Adam, ” An E
pitaxial YIG 1O-Channel E
'1lter Bank'', 1982. p 78
79) is a perspective view showing the schematic structure of the conventional magnetostatic filter puncture shown in (1) to (3).
) are the first to third strip-shaped YIG (yttricum-scissor-garnet) thin film waveguides grown in liquid phase on a gadolinium-gallium-garnet substrate;
The input side transducers (6) to (8) are composed of microstrip lines having the function of 5) and intersect with one end of the first to third YIG thin film waveguides (1) to (3). These are first to third output side transducers configured by microstrip lines having tips (9) to (11). These first to third output side transducers (6) to (8) are connected to the first to third YIG thin film waveguides (
They are arranged so as to intersect with the other ends of 1) to (3), respectively. In addition, (12) is the input/output side transducer (
4), coaxial terminal connected to (6) to (8), (13)
is a dielectric substrate forming a microstripe line, (1
4) is the housing, (15) and (16) are the magnetic plates, (17)
Haat iron, (18) ID magnet plate (15), (16)
and a magnetic circuit consisting of a yoke (17).
次に動作について説明する。間隙に不均一な磁場を有す
る磁気回路(18)により、第1〜第3のストリップ形
状YIG薄膜導波路(1)〜(3)Kは、これらの薄膜
の面に垂直な方向に、各々異なる磁界H1、Hl、H3
が印加される。Next, the operation will be explained. Due to the magnetic circuit (18) having a non-uniform magnetic field in the gap, the first to third strip-shaped YIG thin film waveguides (1) to (3) K have different directions in the direction perpendicular to the plane of these thin films. Magnetic field H1, Hl, H3
is applied.
このため第1〜第3のY工awi、膜導波路(1)〜(
3)には、それぞれ伝搬帯域の異なる静磁前進体積波(
MSE’VW)が伝搬する。その伝搬帯域の下限周波数
は、それぞれT(Hl−N・4πM)、 T(Hl−N
・4πM)IT(H3−N −4ycyr )、iり上
1’Jk周波1にハT (Hl −「icyrM )
(Ht−1−(1−N)・4πM)、T (Hl−
N・4πM ) (H2+(1−N )・面、T(H3
−N・4πM)(H3+(1−N)・4πM) で表わ
される。ここでTは磁気回転比、Nは反磁界係数、4π
MはYIGの飽和磁化である。この帯域は通常I GH
z以上あり、フィルタパンクとして用いるためには、静
磁前進体積波の伝搬損失の小さい下限周波叙近傍の狭い
周波数帯域のみを通過帯域とする必要があり、入、出カ
ドランスデューサ(4) (6) (7)(8)の形状
を調整している。For this reason, the first to third Y-type awi, film waveguides (1) to (
3), magnetostatic forward volume waves (
MSE'VW) propagates. The lower limit frequencies of the propagation band are T(Hl-N・4πM) and T(Hl-N
・4πM) IT (H3-N -4ycyr),
(Ht-1-(1-N)・4πM), T (Hl-
N・4πM) (H2+(1-N)・plane, T(H3
−N・4πM)(H3+(1−N)・4πM) Here, T is the gyromagnetic ratio, N is the demagnetizing field coefficient, 4π
M is the saturation magnetization of YIG. This band is usually IGH
z or more, and in order to use it as a filter puncture, it is necessary to make the pass band only a narrow frequency band near the lower limit frequency where the propagation loss of the magnetostatic forward volume wave is small. 6) The shapes of (7) and (8) have been adjusted.
そこで、入力側トランスデユーサ(4) K 一定OR
F定電力同軸端子(12)を通して入射し、その周旋数
を掃引すると、第3図に示すように、各出力側トランス
デユーサ(6)〜(8)には異なる周を数帯域でRF定
電力現われる。したがって、入力側トランスデユーサ(
4)に未知の周波数のRF信りが加わる場合、いずれの
出力側トランスデユーサにRF定電力現われるかにより
、周波数帯を知ることができる。さらに周#数帯域幅、
および分解能を上げるには、YIG薄膜導波路の故の増
加と磁界の強さの調整、および人、出カドランスデュー
サの周波数応答の調整により実現できる。Therefore, input side transducer (4) K constant OR
When the F constant power is input through the coaxial terminal (12) and the number of revolutions is swept, each output side transducer (6) to (8) has an RF constant of different revolutions in several bands, as shown in Figure 3. Power appears. Therefore, the input transducer (
When an RF signal of an unknown frequency is added to 4), the frequency band can be determined by which output transducer the RF constant power appears in. Further frequency bandwidth,
And increasing the resolution can be achieved by increasing the YIG thin film waveguide and adjusting the magnetic field strength, as well as adjusting the frequency response of the output transducer.
従来の静磁波フィルタパンクは以上のように構成されて
おり、所要の周波数帯域で動作させるには、反磁界N・
4πMに打勝つような大きな磁界を必要とし、磁気回路
に用いる永久磁石は希土類磁石など高価なものが必要と
なる欠点があった。The conventional magnetostatic wave filter puncture is configured as described above, and in order to operate in the required frequency band, the demagnetizing field N.
It requires a large magnetic field that overcomes 4πM, and has the disadvantage that the permanent magnet used in the magnetic circuit must be an expensive one such as a rare earth magnet.
この発明は上記のような問題点を解消するためになされ
たもので、できるだけ小さい磁界で動作する静磁波フィ
ルタパンクを得ることを目的とする。This invention was made to solve the above-mentioned problems, and aims to obtain a magnetostatic wave filter puncture that operates with as small a magnetic field as possible.
この発明に係る静磁波フィルタパンクは、ストリップ形
状YIG薄膜専波路のストリップの長さ方向に垂直で、
かつ薄膜の面に平行な直流磁界を印加する磁気回路を備
え、この直流磁界印加方法により発生する静磁表面i(
Mssw)を利用したものである。The magnetostatic wave filter puncture according to the present invention is perpendicular to the length direction of the strip of the strip-shaped YIG thin film special wave path,
The magnetostatic surface i (
Mssw) is used.
〔作用J
この発11cおける静磁波フィルタパンクハ、静磁表面
波を用いることにより、YIG薄膜内の反磁界の影響が
無くなり小さな直流磁界を有する磁気回路で構成される
。[Operation J] By using the magnetostatic wave filter puncture and the magnetostatic surface wave in this output 11c, the influence of the demagnetizing field in the YIG thin film is eliminated, and a magnetic circuit having a small DC magnetic field is constructed.
以下、この発り」の一実施例を図について説明する。第
1図において、(19)、(20)は互いに対向する磁
極の面積が異なる永久磁石板、(21)は永久磁石板(
19) (20)とともに磁気回路(22)を構成する
継鉄である。An example of this origin will be described below with reference to the drawings. In Fig. 1, (19) and (20) are permanent magnet plates whose opposing magnetic poles have different areas, and (21) is a permanent magnet plate (
19) This is a yoke that together with (20) constitutes the magnetic circuit (22).
本発明の実施例による静磁波フィルタパンクにおいては
、永久磁石板(19) (20)の間において、第1〜
第3のストリップ形状YIG薄膜導波路(1)〜(3)
のストリップの長さ方向に垂直で薄膜の而に平行な直流
磁界を印加するように磁気回路(22)が構成される。In the magnetostatic wave filter puncture according to the embodiment of the present invention, between the permanent magnet plates (19) and (20), the first to
Third strip-shaped YIG thin film waveguide (1) to (3)
A magnetic circuit (22) is configured to apply a direct current magnetic field perpendicular to the length of the strip and parallel to the thin film.
また、2つの永久磁石板(19) (20)の対向する
磁極の面積が異なるため間隙の直流磁界は不均一となる
。第1−第3のYIG薄膜(1)〜(3)の位置におけ
る直流磁界をそれぞれ[1、[2、l(3とすると、第
1図では右の永久磁石板(20)に比べ左の永久磁石板
(19)の面積を大きくしているため、間隙の磁束密度
は、左の方が小さくなり、Hl)Hl)H3の関係にな
る。Further, since the areas of the opposing magnetic poles of the two permanent magnet plates (19) and (20) are different, the DC magnetic field in the gap becomes non-uniform. Assuming that the DC magnetic fields at the positions of the first to third YIG thin films (1) to (3) are respectively [1, [2, l(3)], the left permanent magnet plate (20) is compared to the right permanent magnet plate (20) in Fig. 1. Since the area of the permanent magnet plate (19) is increased, the magnetic flux density in the gap is smaller on the left side, and the relationship is Hl)Hl)H3.
この構成により、印加直流磁界の方向がYIG薄膜面内
にあり、かつストリップ形状YIG薄膜の厚さが数10
ミクロンと幅、長さに比らべ非常に小さいため反磁界の
影響は無視できる。各YIG薄膜(1)〜(3)には下
限周波数がそれぞれT2H1+4πM)、TZiiii
τi丁、r/1■17iηめで表わされる静磁表面波が
伝搬可能となる。例えば、YIGの4πMが1760ガ
ウスであり、下限向itを3.2. 3.0,2.8
GHzに選ぶとするなら、印加直流磁界を550. 5
00. 450エルステツドとすればよい。従来の静磁
前進体債波を用する場合、反磁界係数Nが0.5程度で
あり、印加直流磁界は2020.1950.1800
エルステッドとなることから、本発明の実施例によれ
ば従来の印加直流磁界の約四分の−で動作することKな
る。With this configuration, the direction of the applied DC magnetic field is within the plane of the YIG thin film, and the thickness of the strip-shaped YIG thin film is several 10
The influence of the demagnetizing field can be ignored because it is very small compared to the width and length of microns. Each YIG thin film (1) to (3) has a lower limit frequency of T2H1+4πM), TZiii
A magnetostatic surface wave expressed as τi, r/1×17iη becomes possible to propagate. For example, 4πM of YIG is 1760 Gauss, and the lower limit direction it is 3.2. 3.0, 2.8
If you choose GHz, the applied DC magnetic field should be 550. 5
00. It should be 450 oersted. When using a conventional magnetostatic advancing body bond wave, the demagnetizing field coefficient N is about 0.5, and the applied DC magnetic field is 2020.1950.1800.
Since this is Oersted, the embodiment of the present invention can operate with about a quarter of the conventional applied DC magnetic field.
[発明の効果J
以上のように、この発明による静磁波フィルタバンクで
は、静磁表面波を利用するので、所要の周波数帯域で動
作させるための直流磁界強度が小さくて済み、磁気回路
を安価にできる効果がある。[Effect of the invention J As described above, since the magnetostatic wave filter bank according to the present invention uses magnetostatic surface waves, the strength of the DC magnetic field to operate in the required frequency band is small, and the magnetic circuit can be made at low cost. There is an effect that can be done.
第1図はこの発明の一実施例による静磁波フィルタバン
クを示す斜視図、第2図は従来の静磁波フィルタバンク
を示す斜視図、第3図は従来の静磁波フィルタバンクの
動作を説明するための図。
(1)〜(3)は、第1〜30YIG薄膜導波路、(4
)は入力側トランスデユーサ、(6〕〜(8)は第1〜
3の出力側トランスデユーサ、(22)は磁気回路。
なお、図中、同−符−8は同一、又は相当部分を示す。Fig. 1 is a perspective view showing a magnetostatic filter bank according to an embodiment of the present invention, Fig. 2 is a perspective view showing a conventional magnetostatic filter bank, and Fig. 3 explains the operation of the conventional magnetostatic filter bank. Illustration for. (1) to (3) are the 1st to 30th YIG thin film waveguides, (4
) is the input side transducer, (6] to (8) are the first to
3 is the output side transducer, and (22) is the magnetic circuit. In addition, in the figure, the same symbol -8 indicates the same or equivalent part.
Claims (1)
YIG薄膜導波路と、上記複数のYIG薄膜導波路すベ
ての一方の片端と交さするように配置した1本のマイク
ロストリップ線路より成る入力側トランスデューサと、
上記複数のYIG薄膜導波路各々の他方の片端と交さす
るように配置し、上記複数のYIG薄膜導波路と同数の
マイクロストリップ線路より成る出力側トランスデュー
サと、上記複数のYIG薄膜導波路各々に異なる直流磁
界を印加する磁気回路とから構成される静磁波フィルタ
バンクにおいて、上記YIG薄膜導波路の長さ方向に垂
直で、かつその薄膜に平行な直流磁界を印加し、複数の
YIG薄膜導波路各々に異なる直流磁界を印加するよう
に対向する磁極の形状が異なる磁気回路とを備え、前記
直流磁界により発生する静磁表面波を利用することを特
徴とする静磁波フィルタバンク。An input consisting of a plurality of YIG thin film waveguides having a strip shape through which magnetostatic waves can propagate, and one microstrip line arranged to intersect one end of all of the plurality of YIG thin film waveguides. side transducer;
An output side transducer, which is arranged to intersect with the other end of each of the plurality of YIG thin film waveguides, and is composed of the same number of microstrip lines as the plurality of YIG thin film waveguides; In a magnetostatic wave filter bank composed of magnetic circuits that apply different DC magnetic fields, a DC magnetic field perpendicular to the length direction of the YIG thin film waveguide and parallel to the thin film is applied, and a plurality of YIG thin film waveguides are What is claimed is: 1. A magnetostatic wave filter bank comprising: magnetic circuits having opposite magnetic poles having different shapes so as to apply different direct current magnetic fields to each magnetic circuit, and utilizing magnetostatic surface waves generated by the direct current magnetic fields.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6904286A JPS62224101A (en) | 1986-03-25 | 1986-03-25 | Magnetostatic wave filter bank |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6904286A JPS62224101A (en) | 1986-03-25 | 1986-03-25 | Magnetostatic wave filter bank |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62224101A true JPS62224101A (en) | 1987-10-02 |
Family
ID=13391131
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6904286A Pending JPS62224101A (en) | 1986-03-25 | 1986-03-25 | Magnetostatic wave filter bank |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62224101A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01318402A (en) * | 1988-06-20 | 1989-12-22 | Murata Mfg Co Ltd | Msw channelizer |
JPH0232231U (en) * | 1988-08-24 | 1990-02-28 | ||
JPH02186801A (en) * | 1989-01-13 | 1990-07-23 | Murata Mfg Co Ltd | Magnetostatic wave device |
US7151423B2 (en) | 2003-12-08 | 2006-12-19 | Matsushita Electric Industrial Co., Ltd. | Demultiplexer and multiplexer |
-
1986
- 1986-03-25 JP JP6904286A patent/JPS62224101A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01318402A (en) * | 1988-06-20 | 1989-12-22 | Murata Mfg Co Ltd | Msw channelizer |
JPH0232231U (en) * | 1988-08-24 | 1990-02-28 | ||
JPH02186801A (en) * | 1989-01-13 | 1990-07-23 | Murata Mfg Co Ltd | Magnetostatic wave device |
US7151423B2 (en) | 2003-12-08 | 2006-12-19 | Matsushita Electric Industrial Co., Ltd. | Demultiplexer and multiplexer |
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