JPH01213849A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH01213849A JPH01213849A JP63039289A JP3928988A JPH01213849A JP H01213849 A JPH01213849 A JP H01213849A JP 63039289 A JP63039289 A JP 63039289A JP 3928988 A JP3928988 A JP 3928988A JP H01213849 A JPH01213849 A JP H01213849A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- protective layer
- magneto
- optical recording
- protective
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 51
- 239000011241 protective layer Substances 0.000 claims abstract description 35
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 13
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 239000000956 alloy Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 6
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 150000002910 rare earth metals Chemical class 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 150000003624 transition metals Chemical class 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 12
- 230000007797 corrosion Effects 0.000 abstract description 12
- 230000035699 permeability Effects 0.000 abstract description 5
- 229910000838 Al alloy Inorganic materials 0.000 abstract description 4
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- -1 OSTiO alone Chemical class 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 229920005862 polyol Polymers 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 229910001936 tantalum oxide Inorganic materials 0.000 description 4
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 150000003077 polyols Chemical class 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229920002587 poly(1,3-butadiene) polymer Polymers 0.000 description 2
- 239000010734 process oil Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910002546 FeCo Inorganic materials 0.000 description 1
- 230000005374 Kerr effect Effects 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 125000005442 diisocyanate group Chemical group 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- 235000019252 potassium sulphite Nutrition 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、光学的記録に用いる光磁気記録媒体に関する
。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a magneto-optical recording medium used for optical recording.
(従来の技術とその課題)
光メモリー素子の中でも追加記録、消去が可能なイレー
ザブル型メモリーは、光磁気記録方式が最も実用化に近
い段階にいる。光磁気記録媒体の記録層としては総合的
な特性から見て、現在の所、希土類、遷移金属薄膜が最
も多く用いられている。(Conventional technology and its issues) Among optical memory devices, magneto-optical recording is at the closest stage to practical use for erasable memory, which allows additional recording and erasing. At present, thin films of rare earth metals and transition metals are most often used as the recording layer of magneto-optical recording media in terms of overall characteristics.
この光磁気記録媒体として、レーザー光照射時の記録・
再生効率を向上させる為に基板上の光磁気記録層上に反
射層を設ける方式も提案されている。この方式はカー効
果とファラデー効果の併用により高いC/N比を得られ
るという点で優れている。This magneto-optical recording medium can be used for recording and recording during laser beam irradiation.
In order to improve reproduction efficiency, a method has also been proposed in which a reflective layer is provided on the magneto-optical recording layer on the substrate. This method is excellent in that a high C/N ratio can be obtained by using both the Kerr effect and the Faraday effect.
記録層上に設けられる反射層は一般的には高反射率の物
質が考えられるが、 Au、Ag、PLはコストが高<
Cuは腐食を起こし易いためAlまたはAlの合金の薄
膜が多く用いられる。The reflective layer provided on the recording layer is generally made of a material with high reflectance, but Au, Ag, and PL are expensive and expensive.
Since Cu tends to corrode, thin films of Al or Al alloys are often used.
しかしながら、AlやAl合金を使用した場合には耐蝕
性という点で問題がある。 すなわちAlやAl合金は
表面に自然酸化膜をつくるため全体腐食に対しては強固
な特性を示すが一度ピンホールが生成すると腐食電流の
集中が起こりピンホールの拡大をもたらすことになる。However, when Al or Al alloy is used, there is a problem in terms of corrosion resistance. That is, Al and Al alloys exhibit strong characteristics against general corrosion because they form a natural oxide film on their surfaces, but once pinholes are formed, corrosion current is concentrated, resulting in enlargement of the pinholes.
この反応は特に水分の存在下において顕著である。This reaction is particularly noticeable in the presence of moisture.
(課題を解決するための手段)
本発明者等は上述の欠点を克服した、高耐蝕性で高C/
N比の光磁気記録媒体を提供するべく鋭意検討した結果
、特定の物質で複数の保護層を構成することによりキャ
リアレベルが高く、経時安定性に優れた光磁気記録媒体
が得られることを見出した。(Means for Solving the Problems) The present inventors have devised a highly corrosion resistant and high C/
As a result of intensive research to provide a magneto-optical recording medium with a high N ratio, we discovered that by configuring multiple protective layers with a specific material, a magneto-optical recording medium with a high carrier level and excellent stability over time can be obtained. Ta.
本発明の要旨は、基板上に金属酸化物からなる干渉層、
希土類金属と遷移金属の合金からなる光磁気記録層、記
録層に接して設けられたAlまたはAlを主体とする合
金からなる反射層、金属酸化物からなる第一保護層およ
び有機物からなる第二保護層を順次設けてなる光磁気記
録媒体に存する。The gist of the present invention is to provide an interference layer made of a metal oxide on a substrate,
A magneto-optical recording layer made of an alloy of a rare earth metal and a transition metal, a reflective layer made of Al or an alloy mainly composed of Al provided in contact with the recording layer, a first protective layer made of a metal oxide, and a second protective layer made of an organic substance. The invention resides in a magneto-optical recording medium in which protective layers are sequentially provided.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
まず、本発明において用いられる基板としては、ガラス
、アクリル樹脂、ポリカーボネート樹脂等のプラスチッ
ク、又はガラス上に溝つき樹脂を形成した基板等が挙げ
られる。First, examples of the substrate used in the present invention include glass, plastics such as acrylic resin and polycarbonate resin, and substrates in which grooved resin is formed on glass.
基板の厚みは1〜2閣程度が一般的である。The thickness of the substrate is generally about 1 to 2 mm thick.
光磁気記録層としては、たとえば、TbFe、TbFe
Co、TbCo、DyFeCoなどの希土類と遷移金属
の非晶質磁性合金、及びM n 81 %MnCuB
iなどの多結晶垂直磁化膜が用いられる。As the magneto-optical recording layer, for example, TbFe, TbFe
Amorphous magnetic alloys of rare earths and transition metals such as Co, TbCo, DyFeCo, and Mn 81% MnCuB
A polycrystalline perpendicular magnetization film such as i is used.
特に希土系の合金磁性膜に用いて大変効果的である。光
磁気記録層としては単一の層を用いても良いし、G d
T b F e / T b F e 27)ように
2層以上の記録層を重ねても良い。光磁気記録層の膜厚
は250〜500人である。 本発明においては、上記
基板と光磁気記録層の間に干渉層を設ける。この層は高
屈折率の透明膜による光の干渉効果を用い反射率を落と
すことでノイズを低下させC/N比を向上させるための
ものである。干渉層は単層膜でも多層膜でもよい。It is particularly effective for use in rare earth alloy magnetic films. A single layer may be used as the magneto-optical recording layer, and G d
Two or more recording layers may be stacked as shown in T b Fe / T b Fe 27). The thickness of the magneto-optical recording layer is 250 to 500. In the present invention, an interference layer is provided between the substrate and the magneto-optical recording layer. This layer uses the light interference effect of a transparent film with a high refractive index to reduce reflectance, thereby reducing noise and improving the C/N ratio. The interference layer may be a single layer film or a multilayer film.
干渉層としては金属酸化物が用いられる。金属酸化物と
してはAlz 03、Ta!Os 、S ioz、5i
OSTiO等の金属酸化物単独あるいはこれらの混合物
、あるいはAl−Ta−0の複合酸化物等が挙げられる
。また更にこれらに他の元素、例えばTi、ZrSWS
Mo、Yb等が酸化物の形で単独あるいはAl、Taと
複合して酸化物を形成していてもよい。これらの金属酸
化物は緻密で外部からの水分や酸素の侵入を防ぎ、耐食
性が高く光磁気記録層との反応性も小であり、また、基
板として樹脂基板を使用する場合にも樹脂との密着性に
優れる。Metal oxides are used as the interference layer. Metal oxides include Alz 03, Ta! Os, S ioz, 5i
Examples include metal oxides such as OSTiO alone, mixtures thereof, and composite oxides of Al-Ta-0. Furthermore, other elements such as Ti, ZrSWS
Mo, Yb, etc. may be used alone in the form of an oxide, or may be combined with Al or Ta to form an oxide. These metal oxides are dense and prevent moisture and oxygen from entering from the outside, have high corrosion resistance, and have low reactivity with the magneto-optical recording layer.Also, when using a resin substrate as a substrate, it is difficult to interact with the resin. Excellent adhesion.
この干渉層の膜厚は屈折率により最適膜厚が異なるが、
通常400人〜1500人程度、特に500人〜100
0人が適当である。The optimum thickness of this interference layer varies depending on the refractive index, but
Usually about 400 to 1500 people, especially 500 to 100 people
0 people is appropriate.
干渉層としては特に酸化タンタルを用いて良好である。Tantalum oxide is particularly suitable for use as the interference layer.
酸化タンタルの干渉層は窒化物からなる干渉層に比べ内
部応力が小さくクラックの入る確立ははるかに小さくな
る。An interference layer made of tantalum oxide has lower internal stress than an interference layer made of nitride, and the probability of cracking is much smaller.
酸化タンタルの組成は化学量論的組成比(Ta。The composition of tantalum oxide is a stoichiometric composition ratio (Ta.
0、)に近い組成が好ましい、過剰な酸素は記録層の酸
化をもたらすことになると共に屈折率が低下して干渉効
果が弱くなる。また、酸素が不足している場合には未酸
化部分に腐食が集中し、ピンホールが発生し易くなると
共に膜の光吸収が大きくなりキャリアレベルの低下が起
こる。好ましい酸化状態での屈折率は630nmの波長
で測定したときの複素屈折率をn”=n−iKとしたと
き2.0≦n≦2゜2でかつIK+<0.15の範囲で
ある。A composition close to 0, ) is preferred; excess oxygen will lead to oxidation of the recording layer and will lower the refractive index, weakening the interference effect. Furthermore, when oxygen is insufficient, corrosion concentrates on unoxidized portions, making pinholes more likely to occur, and light absorption of the film increases, resulting in a drop in carrier level. The preferred refractive index in the oxidized state is in the range of 2.0≦n≦2°2 and IK+<0.15, where n''=niK is the complex refractive index measured at a wavelength of 630 nm.
本発明においては光磁気記録層上に反射層及び保護層を
設ける。反射層は一般的には高反射率の物質が考えられ
るが、Au、Ag、PLはコストが高くCuは腐食を起
こし易いため本発明においてはAlまたはAlの合金の
薄膜を用いる。In the present invention, a reflective layer and a protective layer are provided on the magneto-optical recording layer. The reflective layer is generally made of a material with high reflectance, but since Au, Ag, and PL are expensive and Cu is prone to corrosion, the present invention uses a thin film of Al or an alloy of Al.
特にAlにTa、TiXZr、Mo、Pt、V、Cr、
Pdの少な(とも1種を15原子%程度まで添加した合
金は高反射率であり、熱伝導度も低く高C/N比、感度
共に良好な特性をもたらす。Especially for Al, Ta, TiXZr, Mo, Pt, V, Cr,
Alloys containing a small amount of Pd (approximately 15 atomic % of Pd) have high reflectance, low thermal conductivity, and provide good characteristics in terms of high C/N ratio and sensitivity.
反射層の膜厚は通常250Å以下、 好ましくは150
〜250人程度である。厚すぎた場合感度が低下し、薄
すぎる場合には反射率が低下し、C/N比も落ちる。The thickness of the reflective layer is usually 250 Å or less, preferably 150 Å or less.
~250 people. If it is too thick, the sensitivity will decrease, and if it is too thin, the reflectance will decrease and the C/N ratio will also decrease.
第一の保護層としては金属酸化物を用いるがこの保護層
の目的は反射層の酸化防止であり、これにより反射層の
厚さを薄く出来る。金属酸化物としてはAlz 03、
Tax Os、Sing、5iO1TiO等の金属酸化
物単独あるいはこれらの混合物、あるいはAl−Ta、
−0の複合酸化物等が挙げられる。A metal oxide is used as the first protective layer, and the purpose of this protective layer is to prevent oxidation of the reflective layer, so that the thickness of the reflective layer can be reduced. As a metal oxide, Alz 03,
Metal oxides such as Tax Os, Sing, 5iO1TiO alone or a mixture thereof, or Al-Ta,
-0 complex oxide, etc. are mentioned.
また更にこれらに他の元素、例えばTi、Zr、W、M
o、Yb等が酸化物の形で単独あるいはAt。Furthermore, other elements such as Ti, Zr, W, M
o, Yb, etc. alone in the form of oxide or At.
Taと複合して酸化物を形成゛していてもよい。It may be combined with Ta to form an oxide.
第−の保ai層の膜厚は通常50〜500人程度が好ま
しい。The film thickness of the second AI protection layer is usually preferably about 50 to 500 layers.
第一の保護層上に更に有機物からなる第二の保護層を設
ける。この第二保護層に用いられる有機物としては、内
部応力が低く媒体にクランクや反りを生じさせないもの
。また透湿性が低く水分による腐食を強く抑えられるも
のが好ましく、 JIS K2SO3で規定された
100%引張応力にして50Kgf/cm”以下でかつ
JIS Z 020Bで規定された透湿度が24時
間で20g/m”以下のものが好ましく、更に好ましく
は上記規定の100%引張応力30Kgf/cm”以下
、かつ上記規定の透湿度が24時間で10 g/m”以
下の有機物が良好な結果をもたらす。A second protective layer made of an organic material is further provided on the first protective layer. The organic material used for this second protective layer has low internal stress and does not cause cranking or warping of the medium. In addition, it is preferable that the material has low moisture permeability and can strongly suppress corrosion due to moisture, and has a 100% tensile stress of 50 Kgf/cm" or less as specified by JIS K2SO3 and a moisture permeability of 20 g/cm in 24 hours as specified by JIS Z 020B. It is preferable that the organic material has a 100% tensile stress of 30 Kgf/cm'' or less as specified above, and a water vapor permeability of 10 g/m'' or less in 24 hours as specified above.
このような有機物としては炭化水素系ポリオールを使用
するポリウレタンが好ましく採用される。As such an organic substance, polyurethane using a hydrocarbon polyol is preferably employed.
このポリウレタンとしては、吸湿性の低い炭化水素系ポ
リオールを主成分とし、イソシアネート化合物をNC0
10H=0.8〜1.3好ましくはNC010H=0.
9〜1. 1となるような配分比で混合し、硬化せしめ
たものが好ましい。This polyurethane is mainly composed of hydrocarbon polyol with low hygroscopicity, and isocyanate compound is NC0.
10H=0.8-1.3 Preferably NC010H=0.
9-1. It is preferable to mix them at a distribution ratio of 1 and cure them.
このような炭化水素系ポリオールは公知の、例えば特開
昭50−90694号に記載のブタジェンポリマーを水
添する等の方法により、また、これを用いたポリウレタ
ンは公知の、例えば特開昭50−142695号に記載
の、上記ポリオールにポリイソシアネートを反応させる
等の方法により容易に製造される。Such a hydrocarbon polyol can be produced by a known method such as hydrogenating a butadiene polymer described in JP-A-50-90694, and polyurethane using this can be produced by a known method, for example, by hydrogenating a butadiene polymer as described in JP-A-50-90694. It is easily produced by a method such as reacting the above polyol with a polyisocyanate as described in No. 142695.
この第二保護層を設けることで媒体の耐蝕性はさらに大
きく向上し、また、単板で用いた場合でもひっかき等の
破損に対して強くなる。By providing this second protective layer, the corrosion resistance of the medium is further improved, and even when used as a veneer, it becomes resistant to damage such as scratching.
第二保護層の膜厚は0.1〜100μm好ましくは1〜
50um程度である。The thickness of the second protective layer is 0.1 to 100 μm, preferably 1 to 100 μm.
It is about 50um.
この媒体を更に他の基板と貼り合わせる場合は、第二保
護層が接着層を兼ねる。When this medium is further bonded to another substrate, the second protective layer also serves as an adhesive layer.
この場合第二保護層(接着層)の膜厚は1μm〜200
μm好ましくは3μm〜100μm程度である。In this case, the thickness of the second protective layer (adhesive layer) is 1 μm to 200 μm.
μm is preferably about 3 μm to 100 μm.
基板上に干渉層、記録層、反射層、第一保護層の各層を
形成する方法には、スパッタリング等の物理蒸着法(P
VD)、プラズマCVDのような化学蒸着法(CVD)
等が適用される。Physical vapor deposition methods such as sputtering (P
chemical vapor deposition (CVD) such as VD), plasma CVD
etc. apply.
PVD法にて光磁気記録層、反射層及び保護層を成膜形
成するには、所定の組成をもったターゲットを用いて電
子ビーム蒸着またはスパッタリングにより基板上に各層
を堆積するのが通常の方法である。To form a magneto-optical recording layer, a reflective layer, and a protective layer using the PVD method, the usual method is to deposit each layer on a substrate by electron beam evaporation or sputtering using a target with a predetermined composition. It is.
また、イオンブレーティングを用いる方法も考えられる
。Furthermore, a method using ion blating is also considered.
膜の堆積速度は早すぎると膜応力を増加させ、遅すぎれ
ば生産性に影響するので通常0.1人/ s e c〜
100人/ s e c程度とされる。If the film deposition rate is too fast, it will increase the film stress, and if it is too slow, it will affect productivity, so it is usually 0.1 person/sec~
It is said to be around 100 people/sec.
干渉層及び第一保護層の場合、Ta、OSターゲット等
を用いたRFスパッタ法、Taターゲット等を用いたA
rと02ガスによるDCまたはRF反反応性スパッタ法
電子ビーム蒸着法等が好ましい。これらのうち、酸素量
の制御が可能であること、成膜速度が速いこと、基板温
度の上昇が小さいこと等の点からTaターゲット等を用
いたArと02ガスによるDC反応性スパッタ法が好ま
しい。この場合、干渉層の屈折率の制御は圧力を変える
ことで容易に達成できる。In the case of the interference layer and the first protective layer, RF sputtering using Ta, OS target, etc., A using Ta target, etc.
DC or RF reactive sputtering using r and 02 gases, electron beam evaporation, and the like are preferred. Among these, the DC reactive sputtering method using Ar and 02 gas using a Ta target etc. is preferable because it is possible to control the amount of oxygen, the film formation rate is fast, and the rise in substrate temperature is small. . In this case, the refractive index of the interference layer can be easily controlled by changing the pressure.
第二保護層の成膜法としてはスピンコード法、その他通
常の塗布法により容易に成膜することが可能である。The second protective layer can be easily formed by a spin code method or other conventional coating methods.
以下に実施例をもって本発明を更に詳細に説明するが本
発明はその要旨を越えない限り以下の実施例に限定され
るものではない。The present invention will be explained in more detail with reference to examples below, but the present invention is not limited to the following examples unless it exceeds the gist thereof.
実施例、比較例
130mmφのポリカーボネート基板をスパッタリング
装置に導入し、先ず8X10−’torr以下まで排気
し、Arと02との混合ガスを用いてTaターゲットの
反応性スパッタを行いTa、O5からなる800人の干
渉層を形成した0次いでTbターゲット及びFeCoタ
ーゲットを用いたArガスによる2元同時スパッタでT
b tt (F e 90COto) vaの300
人記録層を設けた。更にTaチップを配したAlターゲ
ットを用いArガス中でスパッターしA I ??T
a 3の合金からなる300人の反射層を形成した。更
にTaターゲットをArと0□の混合ガス中でスパッタ
することにより酸化タンタルからなる第一保護層300
人を設けた。最後にポリ−ウレタンを用いて108mの
厚さに第二保護層を設けた。Examples and Comparative Examples A polycarbonate substrate with a diameter of 130 mm was introduced into a sputtering apparatus, the exhaust was first evacuated to below 8X10-'torr, and a Ta target was reactively sputtered using a mixed gas of Ar and O2. A human interference layer was formed by two-dimensional simultaneous sputtering with Ar gas using a Tb target and a FeCo target.
b tt (F e 90COto) 300 of va
A human record layer was set up. Furthermore, sputtering was performed in Ar gas using an Al target equipped with Ta chips. ? T
A 300-layer reflective layer consisting of a 3 alloy was formed. Furthermore, a first protective layer 300 made of tantalum oxide is formed by sputtering a Ta target in a mixed gas of Ar and 0□.
I set up a person. Finally, a second protective layer was applied using polyurethane to a thickness of 108 m.
ポリウレタンは以下のようにして得た。Polyurethane was obtained as follows.
「成分Aの製造」
゛ポリテールHA’” (商品名)(三菱化成工業株式
会社製、数平均分子量:約2000、水酸基等量: 0
.907me q/gのポリオレフィンポリオール)1
00g。"Production of component A""PolytailHA'" (Product name) (manufactured by Mitsubishi Chemical Corporation, number average molecular weight: approximately 2000, hydroxyl group equivalent: 0)
.. 907 meq/g polyolefin polyol)1
00g.
゛′アデカクオドール°゛ (商品名)(旭電化株式会
社製、4官能ポリオール、水酸基等量13.1meq/
g)19.8g。゛'ADEKAQUODOL゛゛ (Product name) (manufactured by Asahi Denka Co., Ltd., tetrafunctional polyol, hydroxyl group equivalent 13.1 meq/
g) 19.8g.
゛パラフィン系プロセスオイル゛° (共同石油株式%
式%
°゛スズ系ウレタン化触媒” (MD化成株式会社製、
UL−22)138mg。゛Paraffinic process oil゛° (Kyodo Oil stock%)
Formula % °゛Tin-based urethane catalyst” (manufactured by MD Kasei Co., Ltd.,
UL-22) 138 mg.
これらを50°Cで均一に混合し成分Aとした。この粘
度は25°Cで1800cpsであった。These were mixed uniformly at 50°C to obtain component A. The viscosity was 1800 cps at 25°C.
「成分Bの製造」
”ポリテールHA”100g、
”パラフィン系プロセスオイルP−200”116g、
これらをセパラブルフラスコ中で室温で均一に混合する
。ついで、2.4−)リレンジイソシアネート14.2
gを添加し、80℃で6時間反応して成分Bを得た、粘
度は25℃で3800cpsであった。"Production of component B" 100 g of "Polytail HA" and 116 g of "paraffinic process oil P-200" are mixed uniformly at room temperature in a separable flask. Then, 2.4-) lylene diisocyanate 14.2
g and reacted at 80°C for 6 hours to obtain component B, which had a viscosity of 3800 cps at 25°C.
このようにして作成したA液とB液を重量比5:1で混
合し、真空脱泡を行った後ディスクに塗布した。The A liquid and the B liquid thus prepared were mixed at a weight ratio of 5:1, vacuum defoamed, and then applied to a disk.
同様にして作成した液を用いプレスシートを作り物性値
を測定したところ JIS K6301での100%
引張応力は3kgf/cm” 引張強度は7kgf/
cm”であった、また、JIS Z0208で規定さ
れた透湿度は厚さ200μmのフィルムで24時間で5
g/cm”であった。A pressed sheet was made using the liquid prepared in the same way and the physical properties were measured. It was 100% according to JIS K6301.
Tensile stress is 3kgf/cm" Tensile strength is 7kgf/
cm", and the moisture permeability specified by JIS Z0208 is 5 in 24 hours for a film with a thickness of 200 μm.
g/cm".
このようにして作成したディスクを70°C185%R
Hの条件で2000時間加速試験し、エラーレートの増
加を経時的に観察した。2000時間経過後もエラーレ
ートは1.2倍に抑制できた。結果を第1図に示す。The disk created in this way was heated at 70°C185%R.
An accelerated test was conducted for 2000 hours under H conditions, and an increase in error rate was observed over time. Even after 2000 hours had passed, the error rate could be suppressed to 1.2 times. The results are shown in Figure 1.
比較例として反射層までを実施例と同じ構造とし、第1
及び第2保護層を設けなかったもの、第1保護層までを
実施例と同じ構造とし第2保護層を設けなかったもの、
第1保護層の代わりに第2保護層を直接設けたものをそ
れぞれ作成した。As a comparative example, the structure up to the reflective layer was the same as that of the example, and the first
and one in which the second protective layer was not provided, and one in which the structure up to the first protective layer was the same as in the example and the second protective layer was not provided,
A second protective layer was directly provided in place of the first protective layer.
これらのディスクを実施例と同様に70°C185%R
Hの条件で200C時間加速試験し、エラーレートの増
加を経時的に観察した。2000時間経過後のエラーレ
ートは実施例に比べ大変大きかった。These disks were heated at 70°C 185%R as in the example.
An accelerated test was conducted at 200C for a time of 200°C, and an increase in error rate was observed over time. The error rate after 2000 hours was much higher than in the example.
結果を第1図に示す。The results are shown in Figure 1.
本発明の光磁気記録媒体は耐候性に優れる。 The magneto-optical recording medium of the present invention has excellent weather resistance.
第1図は実施例及び比較例の加速試験によるエラーレー
トの増加を経時的に測定した結果である。
図中イは実施例、口は第1保護層なし、ハは第2保護層
なし、二は保a!層なしの場合である。
子材0甫正暑)(自発)
1 事件の表示 昭和63年特許願第39289号
2 発明の名称 光磁気記録媒体
3 補正をする者
事件との関係 出願人
(596) 三菱化成工業株式会社
4代理人
〒100 東京都千代田区丸の内二丁目5番2号三菱
化成工業株式会社内
(1)明細書第4頁第12行目に「TiO」とあるのを
rTio、」と訂正する。
(2)同第12頁第8行目〜第9行目に「重量比5:1
」とあるを「重量比1:5」と訂正する。
以上FIG. 1 shows the results of measuring the increase in error rate over time in accelerated tests of Examples and Comparative Examples. In the figure, A is an example, the mouth is without the first protective layer, C is without the second protective layer, and 2 is a! This is the case without a layer. (Spontaneous) 1 Indication of the case Patent Application No. 39289 of 1988 2 Name of the invention Magneto-optical recording medium 3 Relationship to the person making the amendment case Applicant (596) Mitsubishi Chemical Industries, Ltd. 4 Agent Address: Mitsubishi Chemical Industries, Ltd., 2-5-2 Marunouchi, Chiyoda-ku, Tokyo 100 (1) In the specification, page 4, line 12, ``TiO'' should be corrected to read ``rTio.'' (2) On page 12, lines 8 to 9, “Weight ratio 5:1
" is corrected to "weight ratio 1:5". that's all
Claims (1)
と遷移金属の合金からなる光磁気記録層、記録層に接し
て設けられたAlまたはAlを主体とする合金からなる
反射層、金属酸化物からなる第一保護層および有機物か
らなる第二保護層を順次設けてなる光磁気記録媒体。(1) An interference layer made of a metal oxide on a substrate, a magneto-optical recording layer made of an alloy of a rare earth metal and a transition metal, a reflective layer made of Al or an alloy mainly composed of Al provided in contact with the recording layer, and a metal A magneto-optical recording medium comprising a first protective layer made of an oxide and a second protective layer made of an organic substance.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63039289A JPH01213849A (en) | 1988-02-22 | 1988-02-22 | Magneto-optical recording medium |
CA000570235A CA1324213C (en) | 1987-06-26 | 1988-06-23 | Magnetooptical recording media |
DE88305842T DE3883310T2 (en) | 1987-06-26 | 1988-06-24 | Magneto-optical media. |
EP88305842A EP0296888B1 (en) | 1987-06-26 | 1988-06-24 | Magnetooptical recording media |
KR1019880007767A KR960010928B1 (en) | 1987-06-26 | 1988-06-24 | Magnetooptical recording media |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63039289A JPH01213849A (en) | 1988-02-22 | 1988-02-22 | Magneto-optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01213849A true JPH01213849A (en) | 1989-08-28 |
Family
ID=12548996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63039289A Pending JPH01213849A (en) | 1987-06-26 | 1988-02-22 | Magneto-optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01213849A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH076421A (en) * | 1993-06-14 | 1995-01-10 | Nec Corp | Magneto-optical recording medium |
US5560998A (en) * | 1990-03-27 | 1996-10-01 | Teijin Limited | Magneto-optical recording medium |
US5643650A (en) * | 1991-09-09 | 1997-07-01 | Shin-Etsu Chemical Co., Ltd. | Magneto-optical recording medium |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586542A (en) * | 1981-07-02 | 1983-01-14 | Sharp Corp | Magnetooptic storage element |
JPS62293536A (en) * | 1986-06-13 | 1987-12-21 | Hitachi Ltd | Magneto-optical disk |
-
1988
- 1988-02-22 JP JP63039289A patent/JPH01213849A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS586542A (en) * | 1981-07-02 | 1983-01-14 | Sharp Corp | Magnetooptic storage element |
JPS62293536A (en) * | 1986-06-13 | 1987-12-21 | Hitachi Ltd | Magneto-optical disk |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5560998A (en) * | 1990-03-27 | 1996-10-01 | Teijin Limited | Magneto-optical recording medium |
US5643650A (en) * | 1991-09-09 | 1997-07-01 | Shin-Etsu Chemical Co., Ltd. | Magneto-optical recording medium |
JPH076421A (en) * | 1993-06-14 | 1995-01-10 | Nec Corp | Magneto-optical recording medium |
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