JPH01212756A - Sputtering device - Google Patents

Abstract

PURPOSE:To extend an effective film-forming section without enlarging the diameter of a target by disposing plural targets in a manner to be opposed to a substrate fitted to a rotatable substrate holder so that they have dissimilar amount of eccentricity, respectively, with respect to the substrate. CONSTITUTION:In a vacuum chamber 1 provided with an atmosphere of Ar, etc., of the prescribed pressure by regulating a gas introduction system 2 and an exhaust system 3, a substrate 5 is fitted to a rotatable substrate holder 4. On the other hand, plural targets 6a, 6b... respectively placed on target holders 7a, 7b... are disposed in a manner to be opposed to the above substrate 5. Then, glow discharge is initiated between the substrate holder 4 and the target holders 7a... by means of a sputter electric power source 9, by which the targets 6a... are sputtered and a film is formed on the substrate 5. In the above sputtering device, respective targets 6a, 6b... are disposed so that the amounts of eccentricity ra, rb... with respect to the center of the substrate 5 are dissimilar to each other. By this method, sputter grains from the above targets 6a... are allowed to adhere to different regions of the substrate 5, respectively, by which the effective film-forming section excellent in film thickness distribution can be extended.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a sputtering device for forming a thin film on a substrate surface, and particularly relates to a device in which a plurality of targets are arranged in one device. .

[Conventional technology]

A conventional spackling device will be explained based on FIG. 6. In a conventional sputtering apparatus, a substrate 5 held by a substrate holder 4 and a target 6 held by a target holder 7 are provided facing each other in a vacuum chamber 1 (hereinafter simply referred to as a chamber). A sputter power source 9 for applying a direct current or high frequency voltage or the like is provided between the two.

When forming a film, the inside of the chamber 1 is brought to a predetermined vacuum pressure using a pump in the exhaust system (not shown), and then an inert gas such as argon gas is introduced into the chamber 1 to reduce the internal pressure of the chamber 1. is maintained at 10-2 to 10-'Torr. In this state, a high frequency voltage or the like is applied between the substrate 5 and the target 6 by a sputtering electric current 6KA9 to cause glow discharge, and sputtered particles ( A thin layer is produced by attaching target atoms (atom on target) to the surface of the substrate 5.

Furthermore, FIG. 7 shows a conventional example in which a film is formed on a plurality of substrates 5a and 5b. In this case, a cuget 6 is provided at a position facing the substrates 5a and 5b, and the same operation as described above is performed. Films are formed on each of the substrates 5a and 5b by causing glow discharge and rotating the substrate holder 4.

[Problems to be Solved by the Invention] In such a sputtering apparatus, more sputtered particles are distributed in the center of the substrate 5, so the thickness of the film produced on the substrate 5 is as shown in FIG. As shown, it is thick at the center of the board and becomes thinner toward the periphery. In FIG. 8, the horizontal axis X represents the substrate position, and the vertical axis Y represents the film thickness distribution. Therefore, in order to obtain a desired film thickness uniformly over the entire substrate, a target having a considerably larger area than the substrate is required. For example, as shown in Figure 8, the effective range of use (Ha in the figure) is the film thickness distribution ±
In order to secure about 10%, a target having a diameter approximately twice the substrate diameter is required.

This problem also occurs when film formation is performed on multiple substrates as shown in FIG. 7. For example, in the apparatus shown in FIG. In terms of the diameter, the effective part of the thin film produced on the substrate 5a (5b), ie, the range in which the film 11 has a good distribution, could only be formed on a part of the substrate 5a, as shown by diagonal lines in FIG.

This invention was made in view of the above points, and it is possible to reduce the effective film forming area of the substrate without increasing the diameter of the target.
That is, the object is to obtain a sputtering apparatus that can expand the range of favorable film thickness distribution.

[Means to solve the problem]

In the sputtering apparatus according to the present invention, a substrate is mounted on a rotatably provided substrate holder, a plurality of targets are provided facing the substrate, and the plurality of targets are arranged to be eccentric when facing the substrate. They are arranged so that the amounts are different.

[Effect]

In this invention, when each target and the substrate face each other, each target is arranged so that the amount of eccentricity with respect to the substrate is different, so that when the substrate is rotated, sputtered atoms from each target are placed on different substrates. As a result, a target that is larger than the substrate is not required, and the effective film forming area on the substrate can be expanded using a target that is approximately the same size as the substrate.

〔Example] Embodiments of the present invention will be described below based on the drawings.

FIG. 1 is a block diagram of a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the positional relationship between a substrate and each target in the apparatus of this embodiment. In this example, a case will be described in which three targets are used to form a thin film on one substrate. In the figure, 1 is a vacuum chamber, and a gas introduction system 2 and an exhaust system 3 are connected to this chamber 1. A substrate holder 4 is rotatably provided in the chamber 1, and a substrate 5 is held by the substrate holder 4. On the side facing the substrate 5, there are three target plates 6a, 6b, 6C (2 in FIG. 1) made of the same material.
) are arranged, and these targets 6a, 6b, 6c are respectively attached to the target holder 7a.
, 7b, 1c. Here, each target 6a.

The center positions of 6b and 6c are ra from the center position O of the substrate 1, respectively, as shown in the plan view of FIG.

It is eccentric by a distance of rk+re, and r! Kur.

It has become a rc. The substrate 5 is connected to the ground via the substrate holder 4 and to each target 6a.

6b and 6c are each connected to a sputter power source 9 such as a high frequency power source via a matching circuit 8.

Next, the effects of this embodiment will be explained while briefly explaining the film forming process on the substrate.

First, each valve of the gas introduction system 2 and the exhaust system 3 is controlled to bring the inside of the chamber 1 to a predetermined vacuum pressure. Next, for example, argon gas is introduced into the chamber 1 while controlling the opening of each valve in the same manner as described above, and the gas pressure is set to a predetermined gas pressure. Then, while rotating the substrate holder 4, the substrate 5 and target 6 are
A high frequency voltage is applied by a sputter power source 9 between a and GC to cause glow discharge. Then, each target 6a
The sputtered particles from ~6c each arrive on the substrate surface.

At this time, as shown in FIG. 2, each target 6a to 6c
Since the amount of eccentricity with respect to the substrate center 0 is different, the ivy particles from the targets 6a to 6C are not deposited on the same area on the rotating substrate 1, but are deposited on different areas. That is, as shown by the dashed-dotted lines A, B, and C in FIG. 3, the sorrel and ivy particles from each of the targera) 6a, 6b, and 6c are deposited on the substrate with a difference in eccentricity. As a result, the film formed on the substrate 5 is a combination of these A, B, and C, and the film is formed uniformly over the entire surface of the substrate, as shown by the solid line in FIG.

In this way, in this embodiment, a plurality of targets 6a to 6
Since C is arranged eccentrically by different amounts with respect to the rotatable substrate 5, an effective film formation area can be formed on the substrate without requiring a target having a larger diameter than the substrate 5. can be made wider.

In addition, in the device of this embodiment, each target 6a can be adjusted by changing the diameter of each target 63 to 6c and by changing the power supply voltage applied to each target 6a to 6C.
The spun speed can be changed from ~6c, and the membrane pressure distribution can be easily adjusted. For example, in the above example, 3
If the two targets 6a to 6c are of the same size and the applied voltages are the same, the film thickness at the part B in FIG. 3 may become thicker. Furthermore, by reducing the applied voltage, it becomes possible to form a thin film with a uniform thickness over a wider range.

FIG. 4 shows another embodiment of the invention. In this example, 2
This is an example of forming a thin film on two substrates 5a to 5b. In this embodiment, the amount of eccentricity of the target 6a with respect to the substrate 5a when the substrate 5a is in a position facing the target 6a, and the rotation of the substrate 5a by 80° from the state shown in FIG.
The target blades 6a and 6b are arranged so that the amount of eccentricity of the target blade 6b with respect to the substrate 5a is different when the board 5a is in a position facing the target 6b. The same applies to the positional relationship to the

In this embodiment having such a configuration, as in the previous embodiment, each target 6a, 6b is placed on a different area of the same substrate 5a or 5b while the substrates 5a, 5b are rotating.
As a result, the film formed on the substrate is a composite of these particles, and the effective film forming area on the substrate can be enlarged, as shown in FIG. It is possible to form a thin film of uniform thickness over the entire substrate using a target with a diameter similar to that of the target.

In each of the above embodiments, the number of targets is 2 or 3.
However, the number of targets is not limited to these, and by increasing the number, the size of the target can be further reduced and the effective film forming area on the substrate can be increased.

Further, in each of the above embodiments, all of the targets 7) are arranged eccentrically from the center of the substrate, but when each target faces the substrate, it is sufficient that the positions of the targets with respect to the substrate are different from each other. For example, in the embodiment shown in FIG. 4, a configuration in which one target is arranged with an eccentricity O1, that is, concentrically, is of course included in the present invention.

〔Effect of the invention〕

As described above, according to the present invention, in the vacuum chamber,
A substrate is mounted on a rotatable substrate holder, and a plurality of targets are provided on a side facing the substrate,
Furthermore, since the plurality of targets are arranged so that the amount of eccentricity when facing the substrate is different, it is possible to obtain a portion with a good film thickness distribution on the substrate without using a target with a larger diameter than the substrate. It has a widening effect.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of the configuration of a sputtering device according to an embodiment of the present invention, FIG. 2 is a plan view showing the positional relationship between the substrate and each target in the device, and FIG. FIG. 4 is a schematic cross-sectional view of a sputtering apparatus according to another embodiment of the present invention, FIG. 5 is a plan view showing an effective film forming area on a substrate in the apparatus, and FIG. 7 and 7 are respectively block diagrams of conventional sputtering equipment, FIG. 8 is a diagram showing the film thickness distribution on the substrate in the conventional equipment, and FIG. 9 is a diagram showing the effective film forming area on the substrate in the equipment. be. l...Vacuum chamber, 4...Substrate holder, 5.5a
. 5b...Substrate, 6, 6a-6C...Target, 7
゜7a~7C...Target holder, 9...Spack power supply. Patent applicant Shimadzu Corporation, agent Patent attorney Hatahiko Takeishi J', ((',, (. 02 Figure 1.; 3 Figure n ''' Ifl
l'l! J, X 4 jaws 2.35 Fig. 8 Roj, 59 Fig.

Claims (1)

[Claims] (1) In a sputtering apparatus that forms a film by causing a discharge between a substrate and a target that are provided facing each other in a vacuum container, and causing sputtered particles from the target to adhere to the surface of the substrate, the substrate is The target is attached to a rotatably provided substrate holder, and a plurality of the targets are provided, and the plurality of targets are arranged so that the eccentricity when facing the substrate is different from each other. sputtering equipment.