JPH01211727A - Display device - Google Patents
Display deviceInfo
- Publication number
- JPH01211727A JPH01211727A JP3817888A JP3817888A JPH01211727A JP H01211727 A JPH01211727 A JP H01211727A JP 3817888 A JP3817888 A JP 3817888A JP 3817888 A JP3817888 A JP 3817888A JP H01211727 A JPH01211727 A JP H01211727A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- display device
- switching element
- driving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000010409 thin film Substances 0.000 claims abstract description 38
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 10
- 238000007789 sealing Methods 0.000 claims abstract description 7
- 239000013078 crystal Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- UEXWUHQWTWGNIV-UHFFFAOYSA-N [Si].[Na].[Na] Chemical compound [Si].[Na].[Na] UEXWUHQWTWGNIV-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 10
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241000587161 Gomphocarpus Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明はボケノｉ〜テレヒ、壁かけテレビ、プロジェク
ションテレビなどに用いる表示デバイスに関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a display device used in Bokeno i TV, wall-mounted television, projection television, and the like.
従来の技術
従来よりボケノトテレヒなどに表示デバイスを組みこむ
ためには小型、高密度実装の表示デバイスを構成する必
要がある。その−例として特開昭５３−５９３９８号公
報にみられるように表示パネルを形成しでいるガラス基
板上半導体集積回路（以下１ｃ）チップを装着する方法
が提案されている。BACKGROUND OF THE INVENTION Conventionally, in order to incorporate a display device into a mobile phone or the like, it is necessary to construct a small-sized display device with high density packaging. As an example, a method of mounting a semiconductor integrated circuit (hereinafter referred to as 1c) chip on a glass substrate forming a display panel has been proposed, as seen in Japanese Patent Laid-Open No. 53-59398.
以下図面を参照しながら、従来の表示デバイスについて
説明する。A conventional display device will be described below with reference to the drawings.
第５図（ａ＋は従来の表示デバイスの平面図であり、ま
た第５図（ｂ）は第５図ＦａｌのＥＥ′線での断面図で
ある。第５図［ａｌ、 （ｂ）において説明に不要な箇
所は省略してあり、また特に厚み方向に関しては縮小あ
るいは拡大した部分が存在する。以上のことは以下の図
面に対しても同様である。また通常表示デバイスの信号
線はＸ方向信号線、Ｙ方向信号線とも少なくとも１００
本以上で構成されるが、図面ではＸ方向信号線を１０本
、Ｙ方向（３号線を１５本として表わしている。第５図
（ａｌ、 （ｂｌにおいて１はガラス基板上にＸ方向信
号線、Ｙ方向信号線、配線および絵素スイッチング素子
が形成されたアレイ基板、２はＹ方向信号線、３はＸ方
向信号線、４はＹ方向信号線駆動用１ｃ、５はＸ方向信
号線駆動用ＩＣ１６は対向電極が形成された対向電極基
板、７は液晶、８は液晶封止用の封止樹脂である。Fig. 5 (a+ is a plan view of a conventional display device, and Fig. 5 (b) is a sectional view taken along the line EE' of Fig. 5 Fal. Unnecessary parts have been omitted, and there are parts that have been reduced or enlarged, especially in the thickness direction.The above also applies to the following drawings.In addition, the signal lines of display devices are usually arranged in the X direction. Both the signal line and the Y direction signal line are at least 100
In the drawings, the X-direction signal lines are shown as 10, and the Y-direction (line 3 is shown as 15). , an array substrate on which Y-direction signal lines, wiring, and pixel switching elements are formed, 2 is a Y-direction signal line, 3 is an X-direction signal line, 4 is a Y-direction signal line drive 1c, 5 is an X-direction signal line drive The IC 16 is a counter electrode substrate on which a counter electrode is formed, 7 is a liquid crystal, and 8 is a sealing resin for sealing the liquid crystal.
第５図（ａｌ、 （ｂ）で明らかなようにアレイ基板ｌ
上に対向電極基板６を実装し、液晶１１を注入し、駆動
用１ｃ４．５を実装することにより表示デバイスを構成
している。As is clear from FIG. 5(al) and (b), the array substrate l
A display device is constructed by mounting a counter electrode substrate 6 thereon, injecting a liquid crystal 11, and mounting a driver 1c4.5.
以下、同一番号または同一記号を付したものは同一構成
あるいは同一内容あるいは顕像的な内容のものである。Hereinafter, items with the same number or symbol have the same configuration, the same content, or visual content.
発明が解決しようとする課題
しかしながら、従来の表示デバイスでは絵素スイッチン
グ素子などが形成された表示領域と駆動用１ｃの配線パ
ターンを同一基板上に形成しているため、成膜時の一枚
の基板から多数個取りされるパネルの枚数が制限され、
ゆえに表示デバイスの単価が高くなるという問題点があ
る。Problems to be Solved by the Invention However, in conventional display devices, the display area in which pixel switching elements are formed and the wiring pattern for the driver 1c are formed on the same substrate. The number of panels that can be taken out from the board is limited,
Therefore, there is a problem that the unit price of the display device becomes high.
また表示デバイスが各絵素にスイッチング素子が形成さ
れたアクティブマトリックス型液晶表示デバイスの場合
は、特に製品の歩留まり上絵素欠陥が問題となる。前記
絵素欠陥は表示デバイスを構成した後、映像信号を入力
し、駆動用１ｃを動作させ、映像を表示しなければ検出
できない場合が多い。前記従来の表示デバイスで映像を
表示した際、絵素欠陥が検出された場合には前記表示デ
バイスは不良品となる。したがって駆動用１ｃ４゜５お
よびアレイ基板１の両方とも廃棄する、あるいはアレイ
基板１上に多数個装着された駆動用ＩＣ４，５をすべて
取りはずしてアレイ基板１を廃棄する必要があり、多く
の労力と時間および製造費用を必要としていた。Furthermore, when the display device is an active matrix type liquid crystal display device in which a switching element is formed in each picture element, pixel defects pose a particular problem in terms of product yield. In many cases, the pixel defects cannot be detected unless the display device is constructed, a video signal is input, the driving 1c is operated, and the video is displayed. When a pixel defect is detected when an image is displayed on the conventional display device, the display device becomes a defective product. Therefore, it is necessary to discard both the drive IC 4.5 and the array substrate 1, or to remove all the drive ICs 4 and 5 mounted on the array substrate 1 and discard the array substrate 1, which requires a lot of labor and effort. This required time and manufacturing costs.
本発明は上記問題点に鑑み、総合的に低コストに製造で
きる表示デバイスを提供するものである。In view of the above-mentioned problems, the present invention provides a display device that can be manufactured at low cost overall.
課題を解決するための手段
上記課題を解決するため本発明の表示デバイスは、薄膜
駆動素子が形成された第１の基板の端子電極に突起電極
と前記突起電極上に導電性接合層を形成し、前記第１の
基板と絵素駆動用スイッチング素子が形成された第２の
基板とが、第１の基板の端子電極と第２の基板の端子電
極とを導電性接合層を通じて電気的に接続がとれるよう
に形成し、かつ前記第１の基板と第２の基板間に液晶を
注入し、封止したことを特徴とするものである。Means for Solving the Problems In order to solve the above problems, the display device of the present invention includes forming a protruding electrode on the terminal electrode of the first substrate on which the thin film driving element is formed, and a conductive bonding layer on the protruding electrode. , the first substrate and a second substrate on which a pixel driving switching element is formed are electrically connected to terminal electrodes of the first substrate and terminal electrodes of the second substrate through a conductive bonding layer. The device is characterized in that it is formed so as to be removable, and liquid crystal is injected between the first substrate and the second substrate to seal it.
作用
本発明は従来より特に歩留まりが問題にされている絵素
駆動用スイッチング素子が形成された基板（以下、薄膜
スイッチング素子と呼ぶ）と前記薄膜スイッチング素子
を駆動する薄膜駆動素子が形成された基板（以後駆動基
板と呼ぶ）を個々に製造し、駆動基板に薄膜スイッチン
グ素子基板を接続することにより表示デバイスを構成す
るものであるから、成膜時薄膜スイッチング素子基板の
みを一基板上に多数個形成することができる。したがっ
て−表示デバイスあたりの単価をさげることができる。Function The present invention provides a substrate on which a switching element for driving a pixel element (hereinafter referred to as a thin film switching element) is formed, and a substrate on which a thin film driving element for driving the thin film switching element is formed, for which the yield has traditionally been a problem. (hereinafter referred to as drive substrates) are manufactured individually, and a display device is constructed by connecting a thin film switching element substrate to the drive substrate. Therefore, during film formation, only a large number of thin film switching element substrates are placed on one substrate. can be formed. Therefore - the unit cost per display device can be reduced.
また導電性接合層を硬化させる前までは薄膜スイッチン
グ素子基板と駆動基板とを電気的に脱着可能であるから
、検査により絵素欠陥などが検出された場合、容易に薄
膜スイッチング素子基板を取りかえることができる。In addition, the thin film switching element substrate and the drive substrate can be electrically attached and detached until the conductive bonding layer is cured, so if a pixel defect is detected during inspection, the thin film switching element substrate can be easily replaced. be able to.
実施例
以下、本発明の表示デバイスの一実施例について図面を
参照しながら説明する。EXAMPLE Hereinafter, an example of the display device of the present invention will be described with reference to the drawings.
第２図（ａｌは薄膜スイッチング素子基板の平面図であ
る。第２図（ｂ）は第２図（ａ）のＢＢ’緑での断面図
である。第２図ｔａ＋、 （ｂｌにおいて２はＹ方向信
号線、３はＸ方向信号線、１２は薄膜スイッチング素子
基板である。また絵素駆動用の薄膜スイッチング素子は
通常Ｘ方向信号線３とＹ方向信号線の交点に形成される
。薄膜スイッチング素子Ｗ仮の形成方法としてｉｌｌ：
−ｘ板上に複数個の薄膜スイッチング素７−基板を成
膜し、分Ｓｌ＋することにより形成する。Fig. 2 (al is a plan view of the thin film switching element substrate. Fig. 2 (b) is a cross-sectional view taken along BB' green in Fig. 2 (a). 2 in Fig. 2 ta+, (bl) A Y-direction signal line, 3 an X-direction signal line, and 12 a thin-film switching element substrate.Also, a thin-film switching element for driving picture elements is usually formed at the intersection of the X-direction signal line 3 and the Y-direction signal line.Thin film As a temporary method for forming the switching element W:
It is formed by depositing a plurality of thin film switching elements 7-substrates on the -x plate and then applying a layer S1+.
第３図（ａｌは薄膜スイッチング素子を駆動するだめの
駆動基板の平面図である。第３図（ｂｌは第３図（ａ）
のＣＣ”線での断面図である。第３図（ａｌ、 （ｂｌ
において１１は駆動基板、１３．１４は薄膜駆動素子の
形成部位、１５は端子電極、９はメツキ技術またはネイ
ルヘットホンティング技術を用いて駆動基板の端子電極
１５上に形成された数μＩｎから１００μｍの高さのＡ
ｕからなる突起電極であり、１０は前記突起電極９＋に
形成された数μｒｎから数十μｍの高さの導電性接合層
である。前記導電性接合層は接着剤として、エボー（−
ソ系、］τ−ノール系等を主剤とし、Ａｇ、 Ａ１．
＋、 Ｎ ｉ 、 Ｃ，５ｎＯｚなとのフレークを
混ぜたものであり、転写等の技術で突起電極９−Ｊ：に
形成される。なお、前記薄膜駆動素子の形成方法として
は、シリコン単結晶基板にエツチング技術なとを用いて
駆動用トランジスタを形成する方法がある。またアモル
ファス状の二配化ケイ素基板の上に２μｍ以下のケイ素
の窒化物を未顆状に塗るとそこだけシリコンの種結晶が
１つだりてき、この種結晶をもとにシリコン華結晶どう
しが互いにぶつかりあうまで成長させ、前記結晶上の駆
動用Ｉ−ランジスタなどを形成する方法があげられる。Figure 3 (al is a plan view of the drive board for driving the thin film switching element. Figure 3 (bl is Figure 3 (a)
3 is a cross-sectional view taken along the line CC'' of
, 11 is a drive substrate, 13 and 14 are formation parts of thin film drive elements, 15 are terminal electrodes, and 9 is a layer of a few μIn to 100 μm formed on the terminal electrode 15 of the drive substrate using plating technology or nail head fonting technology. height A
10 is a conductive bonding layer formed on the protruding electrode 9+ and having a height of several μrn to several tens of μm. The conductive bonding layer is made of Evo(-) as an adhesive.
The main agent is Ag, A1.
+, Ni, C, and 5nOz flakes, and is formed on the protruding electrode 9-J: by a technique such as transfer. As a method for forming the thin film driving element, there is a method of forming a driving transistor on a silicon single crystal substrate using an etching technique or the like. Furthermore, if silicon nitride with a size of 2 μm or less is coated on an amorphous di-distributed silicon substrate in an uncondensed form, a single silicon seed crystal will fall there, and based on this seed crystal, silicon flower crystals will form together. An example of this method is to grow the crystals until they collide with each other to form a driving I-transistor or the like on the crystal.
この方法は容易に大面積に駆動用１−ランジスタなどを
形成でき、表示デバイスの大型化および低コスト化に対
応することができる。With this method, it is possible to easily form a driving transistor in a large area, and it is possible to cope with the increase in size and cost reduction of display devices.
第１図Ｔａｌは本発明の第１の実施例における表示デバ
イスの平面図である。第１図（ｂ）は第１図ｆａ）のＡ
Ａ’線での断面図である。第１図（ａｌ、 （ｂｌは第
３図（ａｌ、 ｆｂ）の駆動基板に第２図（ａｔ、 ｆ
ｂ）の薄膜スイッチング素子基板を接続したところを示
している。FIG. 1 Tal is a plan view of a display device in a first embodiment of the present invention. Figure 1(b) is A of Figure 1fa)
It is a sectional view taken along the A' line. Figure 1 (al, (bl) is the drive board in Figure 3 (al, fb) and Figure 2 (at, f).
The thin film switching element substrate of b) is shown connected.
前述の駆イリＪ基板に薄膜スイッチング基板の接続方法
としては、駆動基板に１：ｊ止樹脂を塗布し、前記駆動
基板の端子電極に薄膜スイッチング素子基板の端子電極
を位置合一υ後、電気オーブン、ヒートコラム等を用い
て加熱接着法により接続する。この時薄膜スイノチンク
素子基板の０：１ｊ子電極にはＡｕ、Ｎｉ、Ｉ’ＦＯ，
Ｃｕ、Ｃｒ、’Ｆｉ膜等を形成しておく。また前記端子
電極にＡｆｆｌｉが形成されている場合には導電性接合
層としてｌ ｎＳｎを用い、へβ膜と合金接続を行・）
。次に薄膜スイッチング素子基板と駆動基板間に液晶を
注入、封止することにより表示デハーイスか作製される
。また薄膜スイッチング素子の検査としては、薄膜スイ
ッチング素子基板を駆動基板に仮接続し、加熱接着前に
検査をおこなう。The method for connecting a thin film switching board to the above-mentioned drive board is to apply a 1:J stopper resin to the drive board, align the terminal electrodes of the thin film switching element board with the terminal electrodes of the drive board, and then connect the Connect by heat bonding using an oven, heat column, etc. At this time, Au, Ni, I'FO,
Cu, Cr, 'Fi films, etc. are formed in advance. In addition, when Affli is formed on the terminal electrode, lnSn is used as a conductive bonding layer and an alloy connection is made with the beta film.
. Next, a display device is manufactured by injecting and sealing liquid crystal between the thin film switching element substrate and the drive substrate. Further, as for testing the thin film switching element, the thin film switching element substrate is temporarily connected to the drive board, and the test is performed before heat bonding.
以下本発明の第２の実施例について図面を参照しながら
説明する。A second embodiment of the present invention will be described below with reference to the drawings.
第４図（ａｌは本発明の第２の実施例を示す表示デバイ
スの平面図である。第４図［ｂｌは第４図（ａ）のＤＤ
’線での断面図である。第２の実施例と第１の実施例の
相違は封止樹脂８の形成部位を突起電極９の形成部位よ
りも外側に形成したことにある。FIG. 4 (al is a plan view of a display device showing a second embodiment of the present invention. FIG. 4 [bl is DD of FIG. 4(a)
It is a sectional view taken along the line '. The difference between the second embodiment and the first embodiment is that the sealing resin 8 is formed on the outside of the protrusion electrode 9 formation area.
第２の実施例に示す構成をとることにより、薄膜スイッ
チング素子基板を駆動基板に接材ε後、月止樹脂を塗布
し、液晶を注入することかできる。By adopting the configuration shown in the second embodiment, after the thin film switching element substrate is attached to the drive substrate ε, a stopper resin can be applied and liquid crystal can be injected.
なお本発明の実施例では導電性接合層］０の形成部位を
突起電極９上としたかこれに限定されるものではな（、
薄膜スイッチング素子基板の端子電極上に形成してもよ
く、突起電極９は薄膜スイッチング素子基板の端子電極
上に形成し、前記突起電極９上に導電性接合層１０を形
成してもよい。In the embodiments of the present invention, the conductive bonding layer]0 was formed on the protruding electrode 9, but it is not limited to this.
The protruding electrode 9 may be formed on the terminal electrode of the thin film switching element substrate, and the protruding electrode 9 may be formed on the protruding electrode 9.
また本発明の図面において、作図および説明を容易にす
るため、］、３．１４を駆動素子形成部位としたが、こ
れに限るものではなく、たとえば駆動基板のほぼ全面に
形成してもよい。In addition, in the drawings of the present invention, in order to facilitate drawing and explanation, the drive element is formed at the drive element formation region ], 3.14, but the drive element is not limited to this, and may be formed on almost the entire surface of the drive substrate, for example.
発明の効果
以−ヒのように本発明の表示デバイスは薄膜駆動素子が
形成された駆動基板の端子電極部に突起電極および前記
突起電極上に導電性接合層を形成し、前記基板に薄膜ス
イッチング素子基板を接続したものである。したがって
従来より歩留まりおよび製造コスＩ〜が問題とされてい
る薄膜スイッチング素子基板を駆動基板とは別工程にて
製造することができる。ゆえυこ多数個とりされる７１
膜スイノチンク素子ｈ！、板の成膜１時、−、−、＋、
（仮あたりの取り数を従来と比較して大幅に増大させる
ことができるから、薄膜スイッチング素子基板のコスト
を低減させることができ、ひいては表示デバイスの製造
コストを低減させることができる。Effects of the Invention As described above, the display device of the present invention includes a protruding electrode on the terminal electrode portion of a drive substrate on which a thin film drive element is formed, a conductive bonding layer on the protrusion electrode, and a thin film switching layer on the substrate. This is what the element substrate is connected to. Therefore, the thin film switching element substrate, which has conventionally been problematic in terms of yield and manufacturing cost I~, can be manufactured in a separate process from that of the drive substrate. Therefore, many υko are taken 71
Membrane suinotinku element h! , plate deposition 1: -, -, +,
(Since the number of temporary hits can be significantly increased compared to the conventional method, the cost of the thin film switching element substrate can be reduced, and the manufacturing cost of the display device can be reduced.
第１図（ａｌ、 （ｂ）は本発明の第１の実施例におけ
る表示デバイスの平面図および断面図、第２図（ａ）。
Ｃｂ）は薄膜スイッチング素子基板の平面図および断面
図、第３図ｔａ＋、 （ｂｌは駆動基板の平面図および
断面図、第４図（ａｔ、 （ｂｌは本発明の第２の実施
例における表示デバイスの平面図および断面図、第５図
（ａｌ、 （ｂｌは従来の表示デバイスの平面図および
断面図である。
■・・・・・・アレイ基板、２・・・・・Ｙ方向信号線
、３・・・・・Ｘ方向信号線、４，５・・・・・駆動用
ＩＣ１６・・・・・・対向電極基板、７・・・・・・液
晶、８・・・・・・封止樹脂、９・・・・・・突起電極
、１０・・・・・・導電性接合層、１１・・・・・・駆
動基板、１２・・・・・薄膜スイッチング素子基板、１
３．１４・・・薄膜駆動素子形成部位、１５・・端子電
極。
冊1(a) and (b) are a plan view and a sectional view of a display device according to the first embodiment of the present invention, and FIG. 2(a) is a plan view and a sectional view of a thin film switching element substrate, and FIG. 3 (ta+), (bl is a plan view and a cross-sectional view of the driving substrate, FIG. 4 (at), (bl is a plan view and a cross-sectional view of the display device in the second embodiment of the present invention, and FIG. 5 (al, ( bl is a plan view and a sectional view of a conventional display device.■...Array substrate, 2...Y direction signal line, 3...X direction signal line, 4, 5 ...Drive IC16...Counter electrode substrate, 7...Liquid crystal, 8...Sealing resin, 9...Protrusion electrode, 10. ... Conductive bonding layer, 11 ... Drive substrate, 12 ... Thin film switching element substrate, 1
3.14... Thin film drive element formation site, 15... Terminal electrode. book
Claims (4)
電極に突起電極と前記突起電極上に導電性接合層を形成
し、前記第１の基板と絵素駆動スイッチ素子が形成され
た第２の基板とが、第１の基板の端子電極と第２の基板
の端子電極とを導電性接合層を通じて電気的に接続がと
れるように形成し、かつ前記第１の基板と第２の基板間
に液晶を注入し、封止していることを特徴とする表示デ
バイス。(1) A protruding electrode is formed on the terminal electrode of the first (7) substrate on which the thin film driving element is formed, and a conductive bonding layer is formed on the protruding electrode, and the first substrate and the pixel driving switch element are formed. a second substrate formed such that the terminal electrodes of the first substrate and the terminal electrodes of the second substrate are electrically connected through a conductive bonding layer; A display device characterized by injecting and sealing liquid crystal between two substrates.
単結晶基板であることを特徴とする請求項第（１）項記
載の表示デバイス。(2) The display device according to claim 1, wherein the first substrate on which the thin film drive element is formed is a silicon single crystal substrate.
ァス基板上にシリコン単結晶が形成された基板であるこ
とを特徴とする請求項第（１）項記載の表示デバイス。(3) The display device according to claim 1, wherein the first substrate on which the thin film drive element is formed is a substrate in which a silicon single crystal is formed on an amorphous substrate.
素基板であることを特徴とする請求項第（３）項記載の
表示デバイス。(4) The display device according to claim (3), wherein the amorphous substrate is an amorphous disodium silicon substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3817888A JPH01211727A (en) | 1988-02-19 | 1988-02-19 | Display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3817888A JPH01211727A (en) | 1988-02-19 | 1988-02-19 | Display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01211727A true JPH01211727A (en) | 1989-08-24 |
Family
ID=12518132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3817888A Pending JPH01211727A (en) | 1988-02-19 | 1988-02-19 | Display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01211727A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0950045A (en) * | 1995-12-15 | 1997-02-18 | Seiko Instr Inc | Semiconductor device, light valve device and projection device |
| WO2010101157A1 (en) | 2009-03-02 | 2010-09-10 | 日本たばこ産業株式会社 | Method for detecting substance in biological sample |
| JP2016118723A (en) * | 2014-12-22 | 2016-06-30 | 日本放送協会 | Spatial light modulator |
-
1988
- 1988-02-19 JP JP3817888A patent/JPH01211727A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0950045A (en) * | 1995-12-15 | 1997-02-18 | Seiko Instr Inc | Semiconductor device, light valve device and projection device |
| WO2010101157A1 (en) | 2009-03-02 | 2010-09-10 | 日本たばこ産業株式会社 | Method for detecting substance in biological sample |
| JP2016118723A (en) * | 2014-12-22 | 2016-06-30 | 日本放送協会 | Spatial light modulator |
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