JPH01207958A - Dhd type glass sealed diode - Google Patents

Dhd type glass sealed diode

Info

Publication number
JPH01207958A
JPH01207958A JP3347288A JP3347288A JPH01207958A JP H01207958 A JPH01207958 A JP H01207958A JP 3347288 A JP3347288 A JP 3347288A JP 3347288 A JP3347288 A JP 3347288A JP H01207958 A JPH01207958 A JP H01207958A
Authority
JP
Japan
Prior art keywords
glass tube
resin film
diode
large diameter
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3347288A
Other languages
Japanese (ja)
Inventor
Mitsumasa Iwahara
岩原 光政
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3347288A priority Critical patent/JPH01207958A/en
Publication of JPH01207958A publication Critical patent/JPH01207958A/en
Pending legal-status Critical Current

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To keep a glass tube from being damaged by mechanical and thermal stresses, by coating extensively the external surface of a glass tube of a diode further with a resin film. CONSTITUTION:A pair of slag leads 1 are disposed in series in such a way that one of parts having large diameters corresponds to the other part of them and a diode chip consisting of a semiconductor element 2 which has electrodes on both faces is interposed at an interval between the large diameter parts of the slag leads 1 which correspond each other by bringing the above chip into contact with the electrodes. Then, the semiconductor element 2 and the large diameter parts of slag leads are kept airtight and are sealed by a glass tube and further, the external surface of its glass tube is coated extensively with a resin film 4. Thus, the resin film 4 coating the whole external surface of the glass tube 3 acts as a buffer with respect to mechanical, thermal stresses caused by outside conditions. Then, the resin film protects the glass tube 3 from exerting stress directly on the glass tube 3 and prevents the development of a crack and split.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はI)HD型ガラス封止ダイオードに関する。[Detailed description of the invention] [Industrial application field] The present invention relates to I) an HD type glass-sealed diode.

〔従来の技術〕[Conventional technology]

DHD型ガラス封止ダイオード(以下単にダイオードと
も称する)は一般に、スラグリードと呼ばれる一端部が
大径となっているリード線の2本を大径部を対応させて
直列に配置し、これら対応している大径部端面間に両面
に電極を有する半導体素体をそれぞれ電極が大径部端面
に接するように挟み、これら半導体素体およびスラグリ
ードの大径部をガラス管を用いて一体として気密封止し
た構造のものが知られており、さらにこのガラス管の外
表面に部分的に細いリング状に樹脂をコーティングして
ダイオードの極性2品質、ロフトなどを表示することも
行われている。
DHD-type glass-sealed diodes (hereinafter simply referred to as diodes) are generally made by arranging two lead wires, each of which has a large diameter at one end called a slug lead, in series with the large diameter portions corresponding to each other. A semiconductor body having electrodes on both sides is sandwiched between the large-diameter end faces of the slug lead, and the semiconductor body and the large-diameter part of the slug lead are air-aired together using a glass tube. A hermetically sealed structure is known, and the outer surface of this glass tube is partially coated with resin in a thin ring shape to display the diode's polarity 2 quality, loft, etc.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが、このような構造のダイオードはプリント基板
への装着に際して、基板へ挿入するときの機械的ストレ
スや基板に固着させるためのはんだ付けのときの熱的ス
トレスにより、ガラス管にクラックが発生したりガラス
管が割れたりする欠点があった。
However, when a diode with this structure is mounted on a printed circuit board, cracks may occur in the glass tube due to mechanical stress during insertion into the board and thermal stress during soldering to secure it to the board. There was a drawback that the glass tube could break.

本発明は、上述の欠点を除去して、機械的ストレスおよ
び熱的ストレスを受けてもガラス管が損傷されにくいダ
イオードを提供することを目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to eliminate the above-mentioned drawbacks and to provide a diode whose glass tube is less susceptible to damage even when subjected to mechanical and thermal stress.

〔課題を解決するための手段〕[Means to solve the problem]

上記の目的を達成するために、本発明においては、直列
に配置される対応部が大径である1対のスラグリードと
、これらのスラグリードの対応面間に電極を接して挟ま
れる両面に電極を有する半導体素体と、これら半導体素
体およびスラクIJ−ドの大径部を気密封止するガラス
管とからなるものにおいて、前記ガラス管の外表面全面
がさらに樹脂膜で被覆されている構造とする。
In order to achieve the above purpose, in the present invention, the corresponding portion placed in series is on both sides in which one pair of slugged, which is large diameter, and an electrode between these sluggish correspondence. In a device consisting of a semiconductor element having an electrode and a glass tube that hermetically seals the semiconductor element and the large diameter portion of the slack IJ, the entire outer surface of the glass tube is further coated with a resin film. Structure.

〔作用〕[Effect]

ガラス管の外表面全面を被覆する樹脂膜が外部からの機
械的ストレス、熱的ストレスに対してバッファーとして
作用し、これらのストレスが直接ガラス管におよばない
ようにガラス管を保護してクラックや割れの発生を防ぐ
The resin film that covers the entire outer surface of the glass tube acts as a buffer against external mechanical stress and thermal stress, protecting the glass tube from direct contact with the stress and preventing cracks. Prevents cracking.

〔実施例〕〔Example〕

第1図は本発明に係るグイオートの一実施例を示す。第
X図(a)はクイオードの断面図であって1対のスラグ
リード1が大径部を対応させて直列に配置されており、
両面に電極を有する半導体素体2であるダイオードチッ
プがスラグリード1の対応する大径部の間に電極を接し
て挟まれており、半導体素体2およびスラグリード1の
大径部がガラス管3により気密封止され、さらにガラス
管3の外表面全面が樹脂膜4で被覆されている。樹脂膜
4は例えばエポキン樹脂インキをガラス管外表面に厚さ
数10μmに塗布して形成される。第1図(b)は第1
図(a)のA−A断面図であって、スラグリード1の大
径部にガラス管3が密着しており、そのガラス管の外表
面を樹脂膜4が被覆している。
FIG. 1 shows an embodiment of a guioto according to the present invention. FIG.
A diode chip, which is a semiconductor body 2 having electrodes on both sides, is sandwiched between corresponding large diameter portions of a slug lead 1 with the electrodes in contact with each other, and the semiconductor body 2 and the large diameter portions of the slug lead 1 are connected to a glass tube. 3, and the entire outer surface of the glass tube 3 is covered with a resin film 4. The resin film 4 is formed, for example, by applying Epoquine resin ink to the outer surface of the glass tube to a thickness of several tens of micrometers. Figure 1(b) shows the first
This is a sectional view taken along the line A-A in Figure (a), in which a glass tube 3 is in close contact with the large diameter portion of the slag lead 1, and a resin film 4 covers the outer surface of the glass tube.

第2図は他の実施例を示し、第1図と同じ部位には同一
の符号が付しである。第2図(a)はグイオートの側面
図であって、ガラス管の外表面を被覆している樹脂膜4
の外表面にさらに部分的にリンク状に樹脂膜5を形成し
たものであり、この樹脂膜5によりクイオートの極性2
品質、ロットなどを表示することができる。第2図(b
)は第2図(a)のB−B断面図を示し、(射脂膜4の
上をさらに樹脂膜5が全円周を被覆している状態を示し
ている。
FIG. 2 shows another embodiment, in which the same parts as in FIG. 1 are given the same reference numerals. FIG. 2(a) is a side view of the Gouioto, showing the resin film 4 covering the outer surface of the glass tube.
A link-shaped resin film 5 is further formed on the outer surface of the quioto.
Quality, lot, etc. can be displayed. Figure 2 (b
) shows a sectional view taken along line BB in FIG. 2(a), showing a state in which the resin film 5 further covers the entire circumference of the resin film 4.

比較のために、ガラス管の外表面を樹脂膜で被覆しない
タイオードおよびガラス管の外表面を部分的に(外表面
を長平方向で1/3程度)リング状に樹脂膜で被覆した
ダイオードとを作製し、これら実施例の全面樹脂膜被覆
ダイオードD1  と比較例の部分的樹脂膜被覆ダイオ
ードD2 および樹脂膜被覆なしのダイオードD3 に
ついて、機械的ストレスに対する強度を調べた。第3図
(a)に示したように鉄製の台7の上にダイオード6を
横たえ上方から重さ100gの鉄ブロック8を落下させ
ガラス管が破壊しはじめる高さhを測定した。その測定
結果を第3図(b)に示す。第3図(b)の横軸にはダ
イオードの種類をプロットしてあり、縦軸はガラス管が
破壊しはじめる高さhを示す。第3図(b)からダイオ
ードD1はダイオードD2またはダイオードD3 に比
べて落下高さhで約3倍機械的ストレスに対する強度が
向上していることが判る。
For comparison, a diode in which the outer surface of the glass tube is not coated with a resin film and a diode in which the outer surface of the glass tube is partially coated with a ring-shaped resin film (approximately 1/3 of the outer surface in the longitudinal direction) are used. The strength against mechanical stress was investigated for the fully resin-coated diode D1 of the example, the partially resin-coated diode D2 of the comparative example, and the diode D3 not coated with the resin film. As shown in FIG. 3(a), the diode 6 was placed on an iron stand 7, and an iron block 8 weighing 100 g was dropped from above to measure the height h at which the glass tube began to break. The measurement results are shown in FIG. 3(b). The type of diode is plotted on the horizontal axis of FIG. 3(b), and the vertical axis represents the height h at which the glass tube begins to break. It can be seen from FIG. 3(b) that the strength against mechanical stress of the diode D1 is improved by about three times at the drop height h compared to the diode D2 or the diode D3.

次に、これらのダイオードについて熱的ストレスに対す
る強度を調べた。第4図(a)に示したようにはんだ浴
槽9に充填された溶解しているはんだ10の中へダイオ
ード6を浸漬してガラス管が破壊しはじめるはんだ温度
を求めた。その測定結果を第4図(b)に示す。第4図
(b)よりタイオードD1  はダイオードD2または
ダイオードD3に比べてはんだ温度で約1100cle
程度熱的ストレスに対する強度が向上していることが判
る。
Next, the strength of these diodes against thermal stress was investigated. As shown in FIG. 4(a), the diode 6 was immersed into the melted solder 10 filled in the solder bath 9, and the solder temperature at which the glass tube began to break was determined. The measurement results are shown in FIG. 4(b). From Figure 4(b), diode D1 has a soldering temperature of about 1100 cle compared to diode D2 or diode D3.
It can be seen that the strength against thermal stress is improved to some extent.

樹脂膜の上にさらに部分的にリンク状に樹脂膜を設けた
他の実施例のダイオードについても同様の測定を行った
結果、一実施例のダイオードと同等の機械的ストレス、
熱的ストレスに対する強度の向上が見られた。
Similar measurements were performed on diodes of other examples in which a resin film was further provided in a link-like manner on top of the resin film, and the results showed that the same mechanical stress as that of the diode of one example was observed.
Improvement in strength against thermal stress was observed.

〔発明の効果〕〔Effect of the invention〕

本発明によれば、DHD型ガラス封止ダイオードのガラ
ス管の外表面全面をさらに樹脂膜で被覆する。このよう
な構造としたことにより、樹脂膜が外部からの機械的ス
トレス、熱的ストレスに対してバッファーとして作用し
、ガラス管が損傷されにくくなり、従来のクイオードに
比べて機械的ストレス、熱的ストレスに対する強度の大
幅に向上したDHD型ガラス封止ダイオードを得ること
ができ、ダ′イオートをプリント基板に装着するとき発
生ずる不良を飛躍的に減少させることが可能となる。
According to the present invention, the entire outer surface of the glass tube of the DHD type glass-sealed diode is further coated with a resin film. With this structure, the resin film acts as a buffer against external mechanical stress and thermal stress, making the glass tube less likely to be damaged, and reducing mechanical stress and thermal stress compared to conventional quaiodes. It is possible to obtain a DHD type glass-sealed diode with greatly improved strength against stress, and it is possible to dramatically reduce defects that occur when the diode is mounted on a printed circuit board.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を示すもので第1図(a)は
断面図、第1図(b)は第1図(a)のA−A断面図で
ある。第2図は本発すの他の実施例を示すもので第2図
(a)は側面図、第2図(b)は第2図(a)のB−B
断面図である。第3図(a)は機械的ストレスに対する
強度の測定方法の説明図、第3図(b)はその測定結果
を示す線図である。第4図(a)は熱的ストレスに対す
る強度の測定方法の説明図、第4図(b)はその測定結
果を示す線図である。 1 スラグリード、2 半導体素体、3 ガラ(o) 第 ′°C) 4図
FIG. 1 shows an embodiment of the present invention; FIG. 1(a) is a cross-sectional view, and FIG. 1(b) is a cross-sectional view taken along the line AA in FIG. 1(a). Fig. 2 shows another embodiment of the present invention, Fig. 2(a) is a side view, and Fig. 2(b) is a line B-B of Fig. 2(a).
FIG. FIG. 3(a) is an explanatory diagram of a method for measuring strength against mechanical stress, and FIG. 3(b) is a diagram showing the measurement results. FIG. 4(a) is an explanatory diagram of a method for measuring strength against thermal stress, and FIG. 4(b) is a diagram showing the measurement results. 1 Slag lead, 2 Semiconductor element, 3 Gala (o) th'°C) 4 Figure

Claims (1)

【特許請求の範囲】[Claims] (1)直列に配置される対応部が大径である1対のスラ
グリードと、これらのスラグリードの対応面間に電極を
接して挟まれる両面に電極を有する半導体素体と、これ
ら半導体素体およびスラグリードの大径部を気密封止す
るガラス管とからなるものにおいて、前記ガラス管の外
表面全面がさらに樹脂膜で被覆されていることを特徴と
するDHD型ガラス封止ダイオード。
(1) A pair of slug leads whose corresponding parts are arranged in series with a large diameter, a semiconductor body having electrodes on both sides sandwiched between the corresponding surfaces of these slag leads with electrodes in contact with each other, and these semiconductor elements. 1. A DHD type glass-sealed diode comprising a glass tube hermetically sealing a large diameter portion of a slug lead and a glass tube, the entire outer surface of said glass tube being further coated with a resin film.
JP3347288A 1988-02-16 1988-02-16 Dhd type glass sealed diode Pending JPH01207958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3347288A JPH01207958A (en) 1988-02-16 1988-02-16 Dhd type glass sealed diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3347288A JPH01207958A (en) 1988-02-16 1988-02-16 Dhd type glass sealed diode

Publications (1)

Publication Number Publication Date
JPH01207958A true JPH01207958A (en) 1989-08-21

Family

ID=12387484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3347288A Pending JPH01207958A (en) 1988-02-16 1988-02-16 Dhd type glass sealed diode

Country Status (1)

Country Link
JP (1) JPH01207958A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5052985A (en) * 1973-09-10 1975-05-10
JPS5067080A (en) * 1973-10-12 1975-06-05
JPS5724549A (en) * 1980-07-21 1982-02-09 Rohm Co Ltd Electronic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5052985A (en) * 1973-09-10 1975-05-10
JPS5067080A (en) * 1973-10-12 1975-06-05
JPS5724549A (en) * 1980-07-21 1982-02-09 Rohm Co Ltd Electronic device

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