JPS62126655A - Semiconductor device having light transmitting window - Google Patents
Semiconductor device having light transmitting windowInfo
- Publication number
- JPS62126655A JPS62126655A JP26656385A JP26656385A JPS62126655A JP S62126655 A JPS62126655 A JP S62126655A JP 26656385 A JP26656385 A JP 26656385A JP 26656385 A JP26656385 A JP 26656385A JP S62126655 A JPS62126655 A JP S62126655A
- Authority
- JP
- Japan
- Prior art keywords
- glass plate
- semiconductor device
- light transmitting
- sealing resin
- transmitting window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 18
- 239000011521 glass Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 16
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims abstract description 7
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 16
- 230000006866 deterioration Effects 0.000 abstract description 4
- 238000004090 dissolution Methods 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 238000000354 decomposition reaction Methods 0.000 abstract 2
- 239000000853 adhesive Substances 0.000 description 7
- 230000001070 adhesive effect Effects 0.000 description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は固体撮像素子または紫外線消去形読出し専用
メモリ素子（ＥＰＲＯＭ）などの光透過窓を有する樹脂
封止半導体装置の構造に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to the structure of a resin-sealed semiconductor device having a light-transmitting window, such as a solid-state image pickup device or an ultraviolet erasable read-only memory device (EPROM).
第２図は従来の樹脂封止形固体撮像素子の構成を示す断
面図で、（１）はダイパッド、 （２）はその上に装着
された半導体チップ、（３）は外部引出しリード、（４
）は半導体チップ（２）と外部引出しリード（３）とを
電気的に接続するボンディングワイヤ、（５）は半導体
チップ＋２）の上面に突出して形成された配線、（６）
はこの配線（５）に接して設けられ光透過窓を構成する
ガラス板、（７）はガラス板（６）と配線（５）とによ
って半導体チップ（２）の上に囲まれた空間、（８）は
以上の構成体を一体に封止する封止樹脂である。Figure 2 is a cross-sectional view showing the configuration of a conventional resin-sealed solid-state image sensor, in which (1) is a die pad, (2) is a semiconductor chip mounted thereon, (3) is an external lead, and (4) is a die pad.
) is a bonding wire that electrically connects the semiconductor chip (2) and the external lead (3), (5) is a wiring formed protruding from the top surface of the semiconductor chip +2), (6)
is a glass plate provided in contact with this wiring (5) and constitutes a light transmission window, (7) is a space surrounded above the semiconductor chip (2) by the glass plate (6) and wiring (5), ( 8) is a sealing resin that integrally seals the above structure.
次に従来の樹脂封止形固体撮像素子の製造工程について
説明する。ダイパッド（１）に半導体チップ（２）を導
電性エポキシ樹脂で接着し、チップ（２）と外部引出し
リード（３）とをボンディングワイヤ（４）で接続する
。ガラス板（６）をチップ（２）の両側部から出ている
ボンディングワイヤ（４）の内側に内接するよう配置す
る。この時、チップ（２）の表面蔭こ突出した配＠ （
５）とカラス板（６）との間に空間（７）ができる。こ
の状態で金型（図示せず）を用いて注型法かトランスフ
ァ成形法で封止樹脂（８）を注入して全体を固着する。Next, the manufacturing process of a conventional resin-sealed solid-state image sensor will be explained. A semiconductor chip (2) is bonded to the die pad (1) with conductive epoxy resin, and the chip (2) and external leads (3) are connected with bonding wires (4). A glass plate (6) is placed so as to be inscribed inside the bonding wires (4) extending from both sides of the chip (2). At this time, the surface of the chip (2) has a protruding surface @ (
A space (7) is created between 5) and the glass plate (6). In this state, a mold (not shown) is used to inject sealing resin (8) by casting or transfer molding to fix the entire structure.
この時ガラス板（６）をチップ（２）と平行感こなるよ
うに、その外周面および、上下面の一部を封止樹脂（８
）で接着することにより、空間（７）の気密を保持し、
外部からのはこりや湿気からチップ＋２）を保護する。At this time, the glass plate (6) is parallel to the chip (2) by sealing the outer peripheral surface and part of the upper and lower surfaces with the sealing resin (8).
) to keep the space (7) airtight,
Protects the chip +2) from external debris and moisture.
従来の固体撮像素子や、ＥＰＲＯＭは以上のように構成
されているので空間（７）の気密を保持する番こは、ガ
ラス板（６）と封止樹脂（８）との接着力が十分でなけ
ればならないが、耐湿テストや実使用中の熱的ストレス
番こより接着力が低下し、ガラス板（６）と封止樹脂（
８）との間に隙間ができ、素子の信頼性が低下する問題
があった。Since conventional solid-state image sensors and EPROMs are constructed as described above, the adhesive that maintains the airtightness of the space (7) must have sufficient adhesive strength between the glass plate (6) and the sealing resin (8). However, the adhesive strength decreases due to moisture resistance tests and thermal stress during actual use, and the bond between the glass plate (6) and the sealing resin (
8), which caused a problem that the reliability of the device was reduced.
この発明は上記のような問題点を解消するためになされ
たもので、ガラス板（６）と封止樹脂（８）との接着力
を向上し、湿気やはこりの浸入を防止でき、信頼性の高
い半導体装置を得ることを目的とする。This invention was made to solve the above problems, and it improves the adhesive strength between the glass plate (6) and the sealing resin (8), prevents moisture and lumps from entering, and improves reliability. The purpose is to obtain a semiconductor device with high performance.
〔問題点を解決するための手段］
この発明に係る光透過窓を有する半導体装置は、ガラス
板と封止樹脂との接着力を向上する手段として、ガラス
板の上下面および側面に無反射コート膜（保護膜）例え
ばフッ化マグネシウムやその他の金属を蒸着するよう番
こしたものである。[Means for Solving the Problems] A semiconductor device having a light-transmitting window according to the present invention is provided with an anti-reflection coating on the upper and lower surfaces and side surfaces of the glass plate as a means for improving the adhesive force between the glass plate and the sealing resin. A film (protective film), such as magnesium fluoride or other metal, is prepared by vapor deposition.
この発明における半導体装置の光透過窓を構成するガラ
ス板の表面に保護膜を設けることにより、熱的ストレス
または、ガラス板自体の溶解もしくは変質にもとずく封
止樹脂との接着力が低下することを防止できる。By providing a protective film on the surface of the glass plate constituting the light transmission window of the semiconductor device in this invention, the adhesive force with the sealing resin is reduced due to thermal stress or melting or deterioration of the glass plate itself. This can be prevented.
第１図はこの発明の一実施例の構成を示す断面図で、前
述第２図の従来例と同一符号は同等部分を示し、その重
複説明は避ける。この実施例の全体構成は従来例と略同
−であり、ガラス板（６）の劣化を防止するために、フ
ン化マグネシウムかうする保護膜（９）をその表面に蒸
着したものを用いた点が異なる。すなわち、カラス板（
６）は保護膜（９）を介して外気及び封止樹脂（８）に
接している。このようにすることによって水分が直接ガ
ラス板（６）Ｉこ触れることがなくなり、ガラス板（６
）の溶解、変質にもとすいて起っていた不良の発生は防
止される。FIG. 1 is a cross-sectional view showing the configuration of an embodiment of the present invention, and the same reference numerals as in the conventional example shown in FIG. 2 indicate the same parts, and redundant explanation thereof will be avoided. The overall structure of this embodiment is almost the same as that of the conventional example, except that a protective film (9) made of magnesium fluoride was deposited on the surface of the glass plate (6) to prevent it from deteriorating. are different. In other words, the crow plate (
6) is in contact with the outside air and the sealing resin (8) via a protective film (9). By doing this, moisture will not come into direct contact with the glass plate (6).
) The occurrence of defects that would otherwise occur due to dissolution and deterioration of quality is prevented.
具体例
６．４ ｒｍ Ｘ ９ ｒｍ 、厚さ１ｍｍのソーダガ
ラス板及び同じソーダガラス板の全面にフッ化マグネシ
ウム保護膜を蒸着形成したものを準備し、エポキシ樹脂
とを用いてそれぞれ２０個の固体撮像素子を封止した。Specific example 6.4 rm x 9 rm, 1 mm thick soda glass plate and the same soda glass plate with a magnesium fluoride protective film formed by vapor deposition on the entire surface were prepared, and 20 solid pieces were each prepared using epoxy resin. The image sensor was sealed.
これを温度１２０℃２湿度１００係の環境（ＰＣＴとい
う）１こ晒し、映倫が出なくなるまでの不良発生状況を
調査した。その結果を下表に示す。This product was exposed to an environment (PCT) with a temperature of 120°C and humidity of 100%, and the occurrence of defects was investigated until Eirin stopped appearing. The results are shown in the table below.
不良発生率
なお上記実施例では、固体撮像素子への適用例について
説明したが、必らずしもこｎＩこ限定されるものでナク
、光透過窓を有する半導体装置、例えばＥＦＲＯＭのよ
うにガラス板と封止樹脂の接着によって完成する半導体
装置、一般についても同様な効果が得られることは明ら
かである。また、保護膜にフッ化マグネシウムを用いた
が、その他の金属でもよい。In the above embodiment, an example of application to a solid-state image sensor was explained, but the application is not necessarily limited to this. It is clear that similar effects can be obtained for semiconductor devices in general, which are completed by adhering a sealing resin and a sealing resin. Moreover, although magnesium fluoride was used for the protective film, other metals may be used.
以上のように、この発明によれば、封止樹脂とガラス板
の接着力を向上する手段として、ガラス板表面１こフッ
化マグネシウム等の金属からなる保護膜を蒸着したので
、湿気によるガラス自体の溶解および変質を防止でき、
信頼性の優れた半導体装置を得ることができる。As described above, according to the present invention, as a means for improving the adhesive force between the sealing resin and the glass plate, a protective film made of a metal such as magnesium fluoride is deposited on the surface of the glass plate. can prevent dissolution and deterioration of
A semiconductor device with excellent reliability can be obtained.
第１図はこの発明の一実施例の構成を示す断面図、第２
図は従来の樹脂封止形固体撮像装置を示す断面図である
。
図において、（２）は半導体チップ、（６）はガラス板
。
（８）は封止樹脂、（９）は保護膜である。
なお、図中同一符号は同一、または相当部分を示す。FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention, and FIG.
The figure is a sectional view showing a conventional resin-sealed solid-state imaging device. In the figure, (2) is a semiconductor chip, and (6) is a glass plate. (8) is a sealing resin, and (9) is a protective film. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (3)
窓を構成するガラス板とを一体に樹脂封止してなるもの
において、上記ガラス板全表面に耐湿性透明保護膜を形
成したことを特徴とする光透過窓を有する半導体装置。(1) A semiconductor chip and a glass plate constituting a window through which light from the semiconductor chip is introduced are integrally sealed with resin, characterized in that a moisture-resistant transparent protective film is formed on the entire surface of the glass plate. A semiconductor device having a light transmitting window.
徴とする特許請求の範囲第１項記載の光透過窓を有する
半導体装置。(2) A semiconductor device having a light transmitting window according to claim 1, wherein a magnesium fluoride film is used as the protective film.
請求の範囲第１項記載の光透過窓を有する半導体装置。(3) A semiconductor device having a light transmitting window according to claim 1, wherein a metal thin film is used as the protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26656385A JPS62126655A (en) | 1985-11-27 | 1985-11-27 | Semiconductor device having light transmitting window |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26656385A JPS62126655A (en) | 1985-11-27 | 1985-11-27 | Semiconductor device having light transmitting window |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62126655A true JPS62126655A (en) | 1987-06-08 |
Family
ID=17432570
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26656385A Pending JPS62126655A (en) | 1985-11-27 | 1985-11-27 | Semiconductor device having light transmitting window |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62126655A (en) |
-
1985
- 1985-11-27 JP JP26656385A patent/JPS62126655A/en active Pending
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