JPH0118575B2 - - Google Patents

Info

Publication number
JPH0118575B2
JPH0118575B2 JP60142458A JP14245885A JPH0118575B2 JP H0118575 B2 JPH0118575 B2 JP H0118575B2 JP 60142458 A JP60142458 A JP 60142458A JP 14245885 A JP14245885 A JP 14245885A JP H0118575 B2 JPH0118575 B2 JP H0118575B2
Authority
JP
Japan
Prior art keywords
film
silicon
protective film
silicon film
reference example
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60142458A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6175513A (ja
Inventor
Tadashi Saito
Nobuo Kodera
Shigekazu Minagawa
Takashi Tokuyama
Takao Myazaki
Haruo Ito
Hiroshi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP60142458A priority Critical patent/JPS6175513A/ja
Publication of JPS6175513A publication Critical patent/JPS6175513A/ja
Publication of JPH0118575B2 publication Critical patent/JPH0118575B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Recrystallisation Techniques (AREA)
JP60142458A 1985-07-01 1985-07-01 シリコン結晶膜の製造方法 Granted JPS6175513A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60142458A JPS6175513A (ja) 1985-07-01 1985-07-01 シリコン結晶膜の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60142458A JPS6175513A (ja) 1985-07-01 1985-07-01 シリコン結晶膜の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP12331375A Division JPS6046539B2 (ja) 1975-10-15 1975-10-15 シリコン結晶膜の製造方法

Publications (2)

Publication Number Publication Date
JPS6175513A JPS6175513A (ja) 1986-04-17
JPH0118575B2 true JPH0118575B2 (enFirst) 1989-04-06

Family

ID=15315783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60142458A Granted JPS6175513A (ja) 1985-07-01 1985-07-01 シリコン結晶膜の製造方法

Country Status (1)

Country Link
JP (1) JPS6175513A (enFirst)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5123975A (en) * 1989-03-28 1992-06-23 Ricoh Company, Ltd. Single crystal silicon substrate
US8633483B2 (en) * 2007-06-26 2014-01-21 Massachusetts Institute Of Technology Recrystallization of semiconductor wafers in a thin film capsule and related processes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4843423A (enFirst) * 1971-10-04 1973-06-23
BE789904A (fr) * 1971-10-12 1973-04-10 Wellcome Found Procedes de synthese organique

Also Published As

Publication number Publication date
JPS6175513A (ja) 1986-04-17

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