JPH0118570B2 - - Google Patents
Info
- Publication number
- JPH0118570B2 JPH0118570B2 JP55047213A JP4721380A JPH0118570B2 JP H0118570 B2 JPH0118570 B2 JP H0118570B2 JP 55047213 A JP55047213 A JP 55047213A JP 4721380 A JP4721380 A JP 4721380A JP H0118570 B2 JPH0118570 B2 JP H0118570B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode film
- base electrode
- substrate
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 description 19
- 239000013078 crystal Substances 0.000 description 10
- 238000009966 trimming Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
- H03B5/36—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、膜型コンデンサに関し、さらに詳し
くはレーザー光などを利用して電極膜をトリミン
グすることによつて容量が調整可能である膜型コ
ンデンサに関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a film-type capacitor, and more specifically to a film-type capacitor whose capacitance can be adjusted by trimming an electrode film using laser light or the like. It is related to capacitors.
［従来の技術］
水晶等の発振回路において、その発振周波数を
調整する目的で膜型コンデンサを発振回路に組込
み、この膜型コンデンサの外側電極膜の一部をレ
ーザー光、電子ビームあるいはサンドブラストな
どによりトリミングして容量の調整を行ない、発
振周波数の調整を行うことは公知である。しか
し、従来の膜型コンデンサは、絶縁性の基板の上
面にベース電極膜と誘電体膜と外側電極膜とを単
純に順次積層して形成しただけの構造であつた。[Prior art] In an oscillation circuit such as a crystal, a film capacitor is incorporated into the oscillation circuit for the purpose of adjusting the oscillation frequency, and a part of the outer electrode film of this film capacitor is irradiated with laser light, electron beam, sandblasting, etc. It is known to perform trimming to adjust the capacitance and adjust the oscillation frequency. However, conventional film capacitors have a structure in which a base electrode film, a dielectric film, and an outer electrode film are simply laminated in sequence on the upper surface of an insulating substrate.
［発明が解決しようとする問題点］
このために、強力なレーザー光などを使用して
外側電極をトリミングする場合に、誤つてベース
電極膜までをも分断してしまうと、容量が激変し
て発振周波数の大幅なシフトが発生し、場合によ
つては発振不能を招く問題点があつた。したがつ
て、従来にあつては、レーザー光などよるトリミ
ングに際してレーザー光などの照射位置を高精度
に管理することが要求されていた。[Problems to be solved by the invention] For this reason, when trimming the outer electrode using a powerful laser beam, if even the base electrode film is accidentally cut off, the capacitance changes dramatically. There was a problem in that a large shift in the oscillation frequency occurred, which in some cases led to the inability to oscillate. Therefore, in the past, when trimming with a laser beam or the like, it was required to control the irradiation position of the laser beam with high precision.
そこで本発明は、上記実情に鑑みて、トリミン
グに際してレーザー光などの照射位置を高精度に
管理することを不要とし、仮にトリミング作業を
誤つても振周波数の大幅なシフトや発振不能を招
くことがないようにすることを目的とするもので
ある。 In view of the above-mentioned circumstances, the present invention eliminates the need for highly accurate management of the irradiation position of laser light, etc. during trimming, and prevents the occurrence of a significant shift in the oscillation frequency or failure of oscillation even if the trimming operation is performed incorrectly. The purpose is to prevent this from occurring.
［問題を解決するための手段］
上記目的のもとに、本発明の膜型コンデンサ
は、上面にベース電極膜と誘電体膜と外側電極膜
とが順次積層して形成してある絶縁性の基板の裏
面に補助配線が形成してあり、この補助配線の両
端部とベース電極膜の両端部とがそれぞれ導通さ
せてあるとこころに特徴を有する。[Means for Solving the Problem] Based on the above object, the film capacitor of the present invention includes an insulating film capacitor having a base electrode film, a dielectric film, and an outer electrode film formed on the upper surface in this order. The device is characterized in that an auxiliary wiring is formed on the back surface of the substrate, and both ends of the auxiliary wiring are electrically connected to both ends of the base electrode film.
［実施例］
先ず、本発明の膜型コンデンサが適用された水
晶発振ユニツトの構造から説明する。[Example] First, the structure of a crystal oscillation unit to which the film capacitor of the present invention is applied will be explained.
第１図および２図において、封止容器１は、逆
椀形の金属シエル３に気密ガラス２を介して複数
の端子ピン５，６，１２〜１６が貫通植設されて
いるベースと、このベースのシエル３に冷間圧
接、抵抗溶接、ハンダなどにより密封固着される
金属キヤツプ４とによつて構成されている。端子
ピン５，６の上端には、水晶振動子９を保持した
保持バネ７，８が導電性接着剤、ハンダなどを介
して固着されている。水晶振動子９の両面には、
蒸着などにより電極９ａ，９ｂが形成されてお
り、各電極は保持バネ７，８を介して端子ピン
５，６に導通している。シエル３の上面には、水
晶振動子９の発振駆動用の集積回路素子１０が接
着してある。なお集積回路素子１０はアラーム音
発生回路などを含んだものでもよい。集積回路素
子１０の各パツド部（図示せず。）と各端子ピン
とはボンデイングワイヤを介して接続されてい
る。すなわち発振回路のインバータ１１（第３図
示）の入力側はXT端子ピン１３に、そして出力
側はXT端子ピン１２に接続してある。またVDD
パツド部はVDD端子ピン１４に接続してある。そ
して例えば１Hzの有極信号を出力するパツド部は
出力端子ピン１５，１６に接続してある。 In FIGS. 1 and 2, a sealed container 1 includes a base in which a plurality of terminal pins 5, 6, 12 to 16 are implanted through an inverted bowl-shaped metal shell 3 through an airtight glass 2; It consists of a metal cap 4 that is hermetically fixed to a base shell 3 by cold pressure welding, resistance welding, soldering, or the like. Holding springs 7 and 8 holding a crystal resonator 9 are fixed to the upper ends of the terminal pins 5 and 6 via conductive adhesive, solder, or the like. On both sides of the crystal oscillator 9,
Electrodes 9a and 9b are formed by vapor deposition or the like, and each electrode is electrically connected to terminal pins 5 and 6 via holding springs 7 and 8. An integrated circuit element 10 for driving oscillation of the crystal resonator 9 is adhered to the upper surface of the shell 3. Note that the integrated circuit element 10 may include an alarm sound generating circuit or the like. Each pad portion (not shown) of the integrated circuit element 10 and each terminal pin are connected via bonding wires. That is, the input side of the inverter 11 (shown in the third figure) of the oscillation circuit is connected to the XT terminal pin 13, and the output side is connected to the XT terminal pin 12. Also V DD
The pad portion is connected to VDD terminal pin 14. A pad portion that outputs a polarized signal of, for example, 1 Hz is connected to output terminal pins 15 and 16.
一方、気密ガラス２の下面とシエル３の下部側
壁内面とによつて区画された下面開口の空間３ａ
には、給水率がほぼ零であり耐熱衝撃性にも優れ
たアルミナ磁器やステアタイト磁器などにて形成
された絶縁性の基板１８が気密ガラス２の下面と
平行に配置してある。 On the other hand, a lower opening space 3a defined by the lower surface of the airtight glass 2 and the inner surface of the lower side wall of the shell 3
An insulating substrate 18 made of alumina porcelain, steatite porcelain, or the like, which has a nearly zero water supply rate and excellent thermal shock resistance, is arranged parallel to the lower surface of the airtight glass 2.
この基板１８は端子ピンに対して固着されるも
のであつて、この基板に本発明に係る以下の構造
の膜型コンデンサが構成されている。 This substrate 18 is fixed to the terminal pin, and a film capacitor having the following structure according to the present invention is constructed on this substrate.
すなわち、第７図示のような外形形状に形成さ
れている基板１８に、第８図示のベース電極膜１
９，２０が設けてあり、その上に第９図示の誘電
体膜２１が設けてあり、さらにその上に第１０図
示の外側電極膜２２が設けてある。基板１８の外
周部にはシエル３の各端子ピンが嵌入可能な切欠
部１８ａ，１８ｂ…１８ｉおよび透孔部１８ｊが
形成してあり、またベース電極膜２０の一端部と
対向する位置にはスルーホール１８ｋが穿設して
ある。切欠部１８ｆ，１８ａには、水晶振動子９
に接続している端子ピン５，６が嵌入する。ベー
ス電極膜１９は切欠部１８ｃ，１８ｆの周縁部ま
で延伸しており、中央の湾曲部１９ａが第３図示
のコンデンサ２４の一方の電極となるものであ
る。ベース電極膜２０は切欠部１８ａ，１８ｂの
周縁部まで延伸しており、中央の略半円部２０ａ
が第３図示のコンデンサ２３の一方の電極となる
ものである。すなわち、コンデンサ２４はベース
電極膜１９の湾曲部１９ａと外側電極膜２２の中
央円形部２２ａとの間で誘電体膜２１を介して生
成され、またコンデンサ２３はベース電極膜２０
の略半円部２０ａと外側電極膜２２の中央円形部
２２ａとの間で誘電体膜２１を介して生成される
ものである。 That is, the base electrode film 1 shown in FIG.
9 and 20, a dielectric film 21 shown in FIG. 9 is provided thereon, and an outer electrode film 22 shown in FIG. 10 is further provided thereon. Cutouts 18a, 18b...18i and a through hole 18j into which the terminal pins of the shell 3 can be fitted are formed on the outer periphery of the substrate 18, and a through hole is formed at a position facing one end of the base electrode film 20. A hole 18k is bored. A crystal oscillator 9 is provided in the notches 18f and 18a.
The terminal pins 5 and 6 connected to the terminal pins 5 and 6 are inserted. The base electrode film 19 extends to the peripheral edges of the notches 18c and 18f, and the central curved portion 19a serves as one electrode of the capacitor 24 shown in the third figure. The base electrode film 20 extends to the peripheral edges of the notches 18a and 18b, and has a substantially semicircular portion 20a in the center.
serves as one electrode of the capacitor 23 shown in the third figure. That is, the capacitor 24 is formed between the curved part 19a of the base electrode film 19 and the central circular part 22a of the outer electrode film 22 via the dielectric film 21, and the capacitor 23 is formed between the curved part 19a of the base electrode film 19 and the central circular part 22a of the outer electrode film 22.
The dielectric film 21 is formed between the approximately semicircular portion 20a of the outer electrode film 22 and the central circular portion 22a of the outer electrode film 22.
一方、基板１８の裏面すなわちシエル３の気密
ガラス２に対向する面には、第５図示の補助配線
２５，２６が導電材により形成されている。補助
配線２５の両端部は、切欠部１８ｃ，１８ｆの端
面部において、端子ピン５，１２を接続するため
のハンダなどを介してベース電極膜１９の両端部
と互いに導通させられる。また補助配線２６の一
端部は、切欠部１８ａ，１８ｂの端面部におい
て、端子ピン６，１３を接続するためのハンダな
どを介してベース電極膜２０の一端部と導通させ
られ、かつ補助配線パターン２６の他端部は、ス
ルーホール１８ｋの部分でベース電極膜２０の他
端部と導通させられている。すなわち、スルーホ
ール１８ｋ内にはベース電極膜２０を形成すると
きに導電ペーストが入り込み、裏面の導電材によ
り形成された補助配線２６とベース電極膜２０と
の導通が確保されている。 On the other hand, on the back surface of the substrate 18, that is, on the surface of the shell 3 facing the airtight glass 2, auxiliary wirings 25 and 26 shown in FIG. 5 are formed of a conductive material. Both ends of the auxiliary wiring 25 are electrically connected to both ends of the base electrode film 19 via solder or the like for connecting the terminal pins 5 and 12 at the end surfaces of the notches 18c and 18f. Further, one end of the auxiliary wiring 26 is electrically connected to one end of the base electrode film 20 through solder or the like for connecting the terminal pins 6 and 13 at the end surfaces of the notches 18a and 18b, and the auxiliary wiring pattern The other end of the base electrode film 20 is electrically connected to the other end of the base electrode film 20 at the through hole 18k. That is, a conductive paste enters into the through hole 18k when forming the base electrode film 20, and electrical conduction between the auxiliary wiring 26 formed of the conductive material on the back surface and the base electrode film 20 is ensured.
ここで発振回路の接続関係について第３，４図
を参照して説明しておく。 Here, the connection relationship of the oscillation circuit will be explained with reference to FIGS. 3 and 4.
水晶振動子９、インバータ１１、帰還抵抗１
７、コンデンサ２３，２４は、第３図示のとおり
接続されている。そしてコンデンサ２３，２４の
一端はVDDにアース接地されている。水晶振動子
９は端子ピン５，６に接続されており、端子ピン
５，１２は第４図示のようにベース電極膜１９に
接続されている。端子ピン１２は集積回路素子１
０のインバータ１１のパツド部にワイヤボンデイ
ングされたものである。端子ピン６，１３は外側
電極膜２０に接続され、また端子ピン１３はイン
バータ１１のパツド部にワイヤボンデイングされ
たものである。コンデンサ２３，２４の外側電極
膜２２はVDD端子ピン１４に接続されている。 Crystal oscillator 9, inverter 11, feedback resistor 1
7. The capacitors 23 and 24 are connected as shown in the third diagram. One ends of the capacitors 23 and 24 are grounded to VDD . The crystal resonator 9 is connected to terminal pins 5 and 6, and the terminal pins 5 and 12 are connected to a base electrode film 19 as shown in the fourth figure. Terminal pin 12 is integrated circuit element 1
This is wire bonded to the pad portion of the inverter 11 of No. 0. The terminal pins 6 and 13 are connected to the outer electrode film 20, and the terminal pin 13 is wire bonded to the pad portion of the inverter 11. The outer electrode films 22 of the capacitors 23 and 24 are connected to the VDD terminal pin 14.
つぎに本発明に係る膜型コンデンサの補助配線
２５，２６の作用について説明する。 Next, the function of the auxiliary wirings 25 and 26 of the film capacitor according to the present invention will be explained.
コンデンサ２３，２４の容量を調整するとき、
レーザー光などにより外側電極膜２２を適当な面
積だけトリミングする。このときレーザー光など
のエネルギが強力であると、誘電体層２１を切断
し、さらにその下層のベース電極膜１９，２０を
も切断して発振回路を構成しなくなつたり、それ
を大きく狂わせるなどの事態を生じるおそれがあ
るが、基板１８の裏面の補助配線２５，２６は、
かかる事態の発生を未然に防止するものである。 When adjusting the capacitance of capacitors 23 and 24,
The outer electrode film 22 is trimmed to an appropriate area using a laser beam or the like. If the energy of the laser beam or the like is strong at this time, it may cut the dielectric layer 21 and further cut the base electrode films 19 and 20 underlying it, causing the oscillation circuit to no longer be configured or greatly distorting it. However, the auxiliary wirings 25 and 26 on the back side of the board 18
This is to prevent such situations from occurring.
例えば第１１図示のトリミング跡２７ａのよう
な場合に、レーザー光がベース電極膜１９の湾曲
部１９ａまで到達してそれを切断してしまつた場
合は、水晶振動子９の一方の電極９ｂと接続され
た端子ピン５とインバータ１１のXT端子ピン１
２との電気的導通は、基板１８の裏面の補助配線
２５により確保され、発振回路は構成され続け
る。 For example, in the case of the trimming mark 27a shown in FIG. 11, if the laser beam reaches the curved part 19a of the base electrode film 19 and cuts it, the connection with one electrode 9b of the crystal oscillator 9 is caused. Connected terminal pin 5 and XT terminal pin 1 of inverter 11
2 is ensured by the auxiliary wiring 25 on the back surface of the substrate 18, and the oscillation circuit continues to be configured.
また第１２図示のトリミング跡２７ｂのような
場合に、レーザー光がベース電極膜２０の略円形
部２０ａに到達してそれを分断してしまつた場合
は、スルーホール１８ｋの部分で補助配線パター
ン２６を介して分断部分２０ｂと残りの電極部分
との電気的導通が確保されるため、容量の大幅な
変化が未然に防止される。すなわち、分断部分２
０ｂがXT端子ピン１３、端子ピン６との接続が
断たれてVDD端子ピン１４との間に形成される
コンデンサ２３の容量が大幅に変化するという不
都合を生じることはない。 Further, in the case of the trimming trace 27b shown in FIG. 12, if the laser beam reaches the substantially circular part 20a of the base electrode film 20 and divides it, the auxiliary wiring pattern 26 is cut off at the through hole 18k. Since electrical continuity between the divided portion 20b and the remaining electrode portion is ensured through the capacitance, a large change in capacitance is prevented. That is, divided part 2
0b is disconnected from the XT terminal pin 13 and the terminal pin 6, and the inconvenience that the capacitance of the capacitor 23 formed between it and the VDD terminal pin 14 changes significantly does not occur.
［発明の効果］
以上詳細に説明した本発明の膜型コンデンサに
よれば、それを発振回路に接続し、レーザー光な
どを使用して電極トリミングにより容量を調整し
て発振周波数を調整する場合に、誤つてベース電
極膜電までをも分断してしまつても、裏面の補助
配線の存在により発振不能あるいは発振周波数の
大幅な変化を未然に防止でき、またそれによつて
レーザー光などの照射位置を高精度に管理するこ
とが不要となる。[Effects of the Invention] According to the film capacitor of the present invention described in detail above, when it is connected to an oscillation circuit and the capacitance is adjusted by electrode trimming using a laser beam or the like, the oscillation frequency can be adjusted. Even if you accidentally cut off the base electrode membrane, the presence of the auxiliary wiring on the back side can prevent oscillation from being impossible or a drastic change in the oscillation frequency. High precision management is no longer necessary.
図面は本発明の一実施例を示し、第１図は本発
明に係る膜型コンデンサが接続された水晶発振ユ
ニツトの断面図、第２図はその底面図、第３図は
発振回路図、第４図は絶縁性基板の正面構造を示
す正面図、第５図は同上基板の裏面構造を示す背
面図、第６図は第４図−線断面図、第７図は
基板の外形形状を示す正面図、第８図はベース電
極膜の形状を示す正面図、第９図は誘電体膜の形
状を示す正面図、第１０図は外側電極膜の形状を
示す正面図、第１１図および第１２図は電極トリ
ミング例を示す説明図、である。
１８……絶縁性の基板、１８ｋ……スルーホー
ル、１９，２０……ベース電極膜、２１……誘電
体膜、２２……外側電極膜、２５，２６……補助
配線。
The drawings show an embodiment of the present invention; FIG. 1 is a sectional view of a crystal oscillation unit to which a film capacitor according to the present invention is connected, FIG. 2 is a bottom view thereof, FIG. 3 is an oscillation circuit diagram, and FIG. Figure 4 is a front view showing the front structure of the insulating substrate, Figure 5 is a rear view showing the back structure of the same substrate, Figure 6 is a sectional view taken along the line shown in Figure 4, and Figure 7 is the external shape of the board. 8 is a front view showing the shape of the base electrode film, FIG. 9 is a front view showing the shape of the dielectric film, FIG. 10 is a front view showing the shape of the outer electrode film, FIGS. FIG. 12 is an explanatory diagram showing an example of electrode trimming. 18... Insulating substrate, 18k... Through hole, 19, 20... Base electrode film, 21... Dielectric film, 22... Outer electrode film, 25, 26... Auxiliary wiring.
Claims (1)
とが順次積層して形成してある基板の裏面に補助
配線が形成してあり、上記補助配線の両端部と上
記ベース電極膜の両端部とがそれぞれ導通させて
あることを特徴とする膜型コンデンサ。 ２ 上記導通は上記基板の縁辺端面でなされてい
ることを特徴とする特許請求の範囲第１項に記載
の膜型コンデンサ。 ３ 上記導通は上記基板に透設されたスルーホー
ルを介してなされていることを特徴とする特許請
求の範囲第１項に記載の膜型コンデンサ。[Scope of Claims] 1 Auxiliary wiring is formed on the back surface of a substrate on which a base electrode film, a dielectric film, and an outer electrode film are sequentially laminated, and both ends of the auxiliary wiring and the above-mentioned A membrane capacitor characterized in that both ends of a base electrode membrane are electrically connected to each other. 2. The film capacitor according to claim 1, wherein the conduction is made at an edge end face of the substrate. 3. The film capacitor according to claim 1, wherein the conduction is made through a through hole provided in the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4721380A JPS56143702A (en) | 1980-04-10 | 1980-04-10 | Oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4721380A JPS56143702A (en) | 1980-04-10 | 1980-04-10 | Oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56143702A JPS56143702A (en) | 1981-11-09 |
| JPH0118570B2 true JPH0118570B2 (en) | 1989-04-06 |
Family
ID=12768870
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4721380A Granted JPS56143702A (en) | 1980-04-10 | 1980-04-10 | Oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56143702A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5124163A (en) * | 1974-08-22 | 1976-02-26 | Citizen Watch Co Ltd |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54121750U (en) * | 1978-02-13 | 1979-08-25 |
-
1980
- 1980-04-10 JP JP4721380A patent/JPS56143702A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5124163A (en) * | 1974-08-22 | 1976-02-26 | Citizen Watch Co Ltd |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56143702A (en) | 1981-11-09 |
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