JPH0118495B2 - - Google Patents
Info
- Publication number
- JPH0118495B2 JPH0118495B2 JP56024296A JP2429681A JPH0118495B2 JP H0118495 B2 JPH0118495 B2 JP H0118495B2 JP 56024296 A JP56024296 A JP 56024296A JP 2429681 A JP2429681 A JP 2429681A JP H0118495 B2 JPH0118495 B2 JP H0118495B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- magnetic
- gap
- insulating layer
- magnetic film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010408 film Substances 0.000 claims description 64
- 238000000034 method Methods 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 16
- 239000011229 interlayer Substances 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910000702 sendust Inorganic materials 0.000 description 4
- 238000004804 winding Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3103—Structure or manufacture of integrated heads or heads mechanically assembled and electrically connected to a support or housing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3109—Details
- G11B5/313—Disposition of layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3163—Fabrication methods or processes specially adapted for a particular head structure, e.g. using base layers for electroplating, using functional layers for masking, using energy or particle beams for shaping the structure or modifying the properties of the basic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
- G11B5/3176—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps
- G11B5/3179—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps the films being mainly disposed in parallel planes
- G11B5/3183—Structure of heads comprising at least in the transducing gap regions two magnetic thin films disposed respectively at both sides of the gaps the films being mainly disposed in parallel planes intersecting the gap plane, e.g. "horizontal head structure"
Description
【発明の詳細な説明】
本発明は薄膜プロセスによる多層化された磁性
膜を用いた磁気ヘツドの構造およびその製法に関
するのである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a structure of a magnetic head using multilayered magnetic films formed by a thin film process and a method for manufacturing the same.
磁気ヘツドを薄膜プロセスを用いて基板上に平
面的に製造する方法が知られている。これらの要
点は第１図ａ示すように、基板１の上に磁気コア
の半体となる第１の磁性膜２を形成し、次に第１
図ｂに示すように非磁性膜３を施こししかる後、
第１図ｃに示すように第２の磁性膜４を被着さ
せ、最終的に第１の磁性膜２と第２の磁性膜４と
の間の非磁性膜３をギヤツプとなした構成の磁気
ヘツドを製造することである。なお、５は巻線窓
である。 A method of manufacturing a magnetic head planarly on a substrate using a thin film process is known. These points are as shown in FIG.
After applying the non-magnetic film 3 as shown in Figure b,
As shown in FIG. 1c, the second magnetic film 4 is deposited, and finally the non-magnetic film 3 between the first magnetic film 2 and the second magnetic film 4 forms a gap. The purpose is to manufacture magnetic heads. Note that 5 is a winding window.
ここで、上記した磁性膜２，４としてはパーマ
ロイ、センダスト等の合金薄膜を用いるわけであ
るが、これらの合金薄膜の比抵抗は80μｍ−cm程
度であり、ビデオの磁気記録に用いられる4MHz
の周波数でのスキンデプスは7μｍ程度である。
このためビデオヘツドのようにトラツク幅が20μ
ｍ程度の磁気ヘツドを上記した薄膜プロセスによ
り製造した場合、エデイカレントロスが大きくな
り、磁気ヘツドの効率が低下する欠点がある。 Here, as the magnetic films 2 and 4 mentioned above, alloy thin films such as Permalloy and Sendust are used, and the specific resistance of these alloy thin films is about 80 μm-cm, and the resistivity of these alloy thin films is about 80 μm-cm.
The skin depth at this frequency is approximately 7 μm.
For this reason, the track width is 20μ like a video head.
When a magnetic head of about 100 m is manufactured by the above-mentioned thin film process, there is a drawback that the eddy current loss increases and the efficiency of the magnetic head decreases.
一方、合金系の磁性材料においてエデイカレン
トロスを小さくする技術として積層、多層化する
ことは知られている。しかし、ギヤツプをボンデ
イング技術によらない上記したような薄膜プロセ
スによる磁気ヘツドにおいては、多層化をはかれ
ることは磁気ヘツド特有の問題を生じ一般的では
ない。 On the other hand, stacking or multilayering is known as a technique for reducing the eddy current loss in alloy-based magnetic materials. However, in a magnetic head formed by the above-mentioned thin film process, which does not involve bonding the gap, multilayering causes problems unique to magnetic heads and is not common.
第１図に示した方法による磁気ヘツドにおい
て、第２の磁性膜はギヤツプ部の充填を良くしよ
うとすれば、第２図に示すようにいつたん第１の
磁性膜２を被うように第２の磁性膜４を被着さ
せ、しかるのちに第１図ｃに示すような形に第１
の磁性膜２の部位を被う第２の磁性膜を一部除去
する方法をとらざるをえない。他の方法、例えば
マスク６等により第１の磁性膜部位２を被う場合
には、マスクを浮いた状態にセツトすると、第３
図ａに示すようなギヤツプ部の充填不足を生じト
ラツク幅コントロールが難かしくなる。また、第
３図ｂに示すような第２の磁性膜４の第１の磁性
膜２上への部分的まわり込みを生じるとともにマ
スク６を高精度に配置できない欠点がある。他
方、第３図ｃのようにマスクを密着させ、第２の
磁性膜４を被着させたのち、マスク６を除去させ
る方法においては第３図ｄに示すようなカケをマ
スク除去の際に生じたり、第３図ｅに示すような
突出部を生じそのフリンジ効果によるへい害を生
じる欠点がある。 In the magnetic head according to the method shown in FIG. 1, if it is desired to improve the filling of the gap portion, the second magnetic film must be formed so as to cover the first magnetic film 2 as shown in FIG. After that, the magnetic film 4 of No. 2 is deposited, and then the first magnetic film 4 is formed into a shape as shown in FIG.
There is no choice but to take a method in which a portion of the second magnetic film covering the magnetic film 2 is partially removed. When covering the first magnetic film portion 2 with another method, for example, using a mask 6, etc., if the mask is set in a floating state, the third
This results in insufficient filling of the gap as shown in Figure a, making it difficult to control the track width. Further, there is a drawback that the second magnetic film 4 partially wraps around the first magnetic film 2 as shown in FIG. 3B, and the mask 6 cannot be placed with high precision. On the other hand, in a method in which the mask 6 is removed after the mask is brought into close contact with the second magnetic film 4 as shown in FIG. 3c, chips as shown in FIG. However, there is a drawback in that a protrusion as shown in FIG. 3e is formed and damage is caused by the fringe effect.
以上述べた点から第２の磁性層は第２図に示し
たごとくいつたん第１の磁性層をも被うように被
着せざるをえないわけである。 From the above-mentioned points, the second magnetic layer must be deposited so as to immediately cover the first magnetic layer as shown in FIG.
このように第１の磁性層による段差部をスラツ
プカバーすることに薄膜プロセスによる磁気ヘツ
ドのコアの多層化の特殊性がある。従来技術によ
り多層化をはかると、第４図ａに示すように基板
１上に層間絶縁層７をはさんだ第１の多層化磁性
膜２′にギヤツプとなる非磁性層３を被着させ、
しかる後に層間絶縁層７をはさんだ第２の多層化
磁性膜４′を被着させ、最後に第１の多層化磁性
膜２′上にオーバコートした部位の第２の多層化
磁性膜４′を除却し、第４図ｂに示すギヤツプ構
造を得る。 In this way, the slap covering of the stepped portion by the first magnetic layer is a special feature of multilayering the core of the magnetic head using the thin film process. When multilayering is attempted using the conventional technique, as shown in FIG. 4a, a nonmagnetic layer 3 serving as a gap is deposited on a first multilayered magnetic film 2' with an interlayer insulating layer 7 sandwiched on a substrate 1.
Thereafter, a second multilayer magnetic film 4' with an interlayer insulating layer 7 interposed therebetween is deposited, and finally, the second multilayer magnetic film 4' is applied to the overcoated area on the first multilayer magnetic film 2'. is removed to obtain the gap structure shown in FIG. 4b.
しかし、第４図ｂからわかるように、ギヤツプ
となる非磁性層３の他にこのギヤツプに平行に第
２の多層化磁性膜４′の層間絶縁層７が副次的な
ギヤツプができる。その結果、主たるギヤツプと
この副次的なギヤツプが平行であるためアジマス
損失がなく相互干渉が出る欠点がある。 However, as can be seen from FIG. 4b, in addition to the nonmagnetic layer 3 forming the gap, a secondary gap is formed in the interlayer insulating layer 7 of the second multilayer magnetic film 4' parallel to this gap. As a result, since the main gap and the secondary gap are parallel, there is no azimuth loss and mutual interference occurs.
本発明の目的は上記した従来技術の欠点をなく
し、薄膜プロセスによる高性能の多層化磁性膜に
よる磁気ヘツド、および、その製造方法を提供す
ることにある。 SUMMARY OF THE INVENTION An object of the present invention is to eliminate the above-mentioned drawbacks of the prior art and to provide a magnetic head using a high-performance multilayered magnetic film formed by a thin film process, and a method for manufacturing the same.
本発明の要点は多層化の際に生じる副次的ギヤ
ツプを実効的に消失せしめるために、主たるギヤ
ツプのギヤツプ長での記録再生効率よりも副次的
ギヤツプのギヤツプ長での記録再生効率が小さく
なるように、ギヤツプ形成用の非磁性層の厚さに
比し、ギヤツプ部近傍での層間絶縁層の厚さを小
さくしたことである。 The key point of the present invention is that in order to effectively eliminate secondary gaps that occur during multilayering, the recording and reproducing efficiency at the gap length of the secondary gap is smaller than the recording and reproducing efficiency at the gap length of the main gap. Thus, the thickness of the interlayer insulating layer in the vicinity of the gap is made smaller than the thickness of the nonmagnetic layer for forming the gap.
これは、ギヤツプ長と層間絶縁層の厚さを検討
した結果、層間絶縁層の厚さはギヤツプ長の略1/
２以下であれば、副次ギヤツプの下部が連続膜に
なつていることもあつて問題にはならないことが
わかつたことに基づいてなされたものである。 As a result of examining the gap length and the thickness of the interlayer insulating layer, we found that the thickness of the interlayer insulating layer is approximately 1/1/1 of the gap length.
This was done based on the finding that if it is 2 or less, there is no problem because the lower part of the secondary gap may be a continuous film.
以下図面を用いて本発明の実施例を説明する。 Embodiments of the present invention will be described below with reference to the drawings.
第５図に示すように非磁性基板１上に6μｍの
センダスト膜２を0.5μｍのSiO2の層間絶縁膜７を
介して３層積層し、19μｍの多層磁性膜をスパツ
タ技術により被着させる。次に略半分の多層磁性
膜をエツチングにより除去し、残された多層磁性
膜の側面をギヤツプ面に使用出来る平面度を得る
ために、ダイヤバイトにより切削し、第６図に示
す磁性ヘツドの第１のコア半体部８を形成する。
次にこのコア半体部８の側面にギヤツプ形成用の
0.5μｍのSiO2膜３を被着させる。これを第７図に
示す。次に6μｍのセンダスト膜４を0.2μｍのSiO2
の層間絶縁層７を介して３層被着させ、第２のコ
ア半体となる多層磁性膜を形成し、第８図に示す
ギヤツプを形成するステツプカバーを行なう。し
かる後、段差部をラップにより落し、巻線窓５を
施こして第９図に示す磁気ヘツド形状を得る。巻
線窓５は第１の工程で行なわれてもよい。第１の
多層磁性膜によるコア半体８と、第２の多層磁性
膜によるコア半体９とにはさまれた0.5μｍの厚さ
のSiO2膜３がギヤツプとして機能し、第２の多
層化に用いられた0.2μｍの厚さのSiO2膜７は実用
上のギヤツプとはならない。 As shown in FIG. 5, three 6 μm Sendust films 2 are laminated on a non-magnetic substrate 1 via a 0.5 μm SiO 2 interlayer insulating film 7, and a 19 μm multilayer magnetic film is deposited by sputtering technique. Next, approximately half of the multilayer magnetic film was removed by etching, and the side surfaces of the remaining multilayer magnetic film were cut with a diamond knife to obtain a flatness that could be used as a gap surface. 1 core half part 8 is formed.
Next, on the side surface of this core half body part 8, a hole for forming a gap is formed.
A 0.5 μm SiO 2 film 3 is deposited. This is shown in FIG. Next, 6 μm Sendust film 4 was coated with 0.2 μm SiO 2
Three layers are deposited via the interlayer insulating layer 7 to form a multilayer magnetic film which becomes the second core half, and a step cover forming the gap shown in FIG. 8 is formed. Thereafter, the stepped portion is removed by wrapping, and a winding window 5 is formed to obtain the magnetic head shape shown in FIG. Winding window 5 may be done in the first step. The 0.5 μm thick SiO 2 film 3 sandwiched between the core half 8 made of the first multilayer magnetic film and the core half 9 made of the second multilayer magnetic film functions as a gap, and the second multilayer magnetic film 3 acts as a gap. The SiO 2 film 7 with a thickness of 0.2 μm used for this process does not cause a practical gap.
第１０図ａ，ｂは本発明の他の実施例の磁気ヘ
ツドのテープ摺動面を示す図である。第２のコア
半体となる多層磁性膜９の層間絶縁層７の厚さが
ギヤツプ近傍部で他の部位７′よりも薄く、ある
いは消失するようになつており、先に述べた多層
化による副次的ギヤツプ幣害をより改善してい
る。 FIGS. 10a and 10b are diagrams showing the tape sliding surface of a magnetic head according to another embodiment of the present invention. The thickness of the interlayer insulating layer 7 of the multilayer magnetic film 9, which forms the second core half, is thinner in the vicinity of the gap than in other parts 7', or disappears due to the multilayer structure described above. The secondary gap damage has been further improved.
これは第２の多層膜を形成するさいに第１１図
に示すように絶縁層となるSiO2を矢印Ａの方向
から被着させ、磁性膜となるセンダストを矢印Ｂ
の方向から被着させ、第１のコア半体の段差部を
SiO2を被着させるときの遮幣に利用することに
よりできる。 When forming the second multilayer film, as shown in Figure 11, SiO2 , which will become an insulating layer, is deposited in the direction of arrow A, and Sendust, which will become a magnetic film, is deposited in the direction of arrow B.
Apply the material from the direction of the step part of the first core half.
It can be used as a barrier when depositing SiO 2 .
また、第１２図に示すように、第１のコア半体
部のギヤツプ面となる側面部をSiO2を被着させ
るときのみマスク６をすることによりできる。 Further, as shown in FIG. 12, the mask 6 can be used only when depositing SiO 2 on the side surface of the first core half, which becomes the gap surface.
以上の実施例は磁気ヘツドの１チツプについて
説明したが薄膜技術を用いていることからウエハ
ープロセス的に一基板上に多チツプを同時に形成
する場合にも適用できることは言うまでもない。 Although the above embodiments have been described with respect to one chip of a magnetic head, since thin film technology is used, it goes without saying that the present invention can also be applied to the case where multiple chips are simultaneously formed on one substrate in a wafer process.
以上述べたように本発明によれば高性能な磁気
ヘツドを薄膜プロセス用いて提供することができ
る。 As described above, according to the present invention, a high performance magnetic head can be provided using a thin film process.
第１図ａ〜ｃ、および第２図は従来の磁気ヘツ
ドの製造方法を説明するための斜視図、第３図ａ
〜ｅ、および第４図ａ，ｂは従来の磁気ヘツドの
製造方法を説明するための正面図、第５図〜第９
図は本発明の一実施例の工程説明のための斜視
図、第１０図ａ，ｂは本発明の他の実施例の磁気
ヘツドのテープ摺動面から見た正面図第１１図、
および第１２図はその製造工程の例を説明するた
めの正面図である。
１；非磁性基板、２，４；磁性膜、３；非磁性
膜、５；巻線窓、６；マスク、７；層間絶縁膜、
８，９；多層化磁性膜による磁気ヘツドのコア半
体。
Figures 1 a to c and Figure 2 are perspective views for explaining the conventional method of manufacturing a magnetic head, and Figure 3 a.
- e and FIGS. 4a and 4b are front views for explaining the conventional method of manufacturing a magnetic head, and FIGS. 5 to 9
10 is a perspective view for explaining the process of an embodiment of the present invention; FIGS. 10a and 10b are front views of a magnetic head according to another embodiment of the present invention as seen from the tape sliding surface;
and FIG. 12 is a front view for explaining an example of the manufacturing process. 1; non-magnetic substrate, 2, 4; magnetic film, 3; non-magnetic film, 5; winding window, 6; mask, 7; interlayer insulating film,
8, 9; Core half of a magnetic head made of multilayered magnetic film.
Claims (1)
の多層磁性膜をスパツタ等により被着させ、該多
層磁性膜の一部位をエツチングまたは切削等によ
り除去することによつて得られた第１の磁性膜の
側面にギヤツプ長に相当する厚さの非磁性膜を被
着させ、しかるのち第２の絶縁層をはさんだ第２
の多層磁性膜を被着させ、前記側面に被着させた
非磁性膜を磁気ヘツドギヤツプとした薄膜磁気ヘ
ツドにおいて、前記第２の多層磁性膜を多層なら
しむる前記第２の絶縁層を前記ギヤツプより離し
て設けると共に該第２の絶縁層の少なくともギヤ
ツプに略平行をなす部分の厚さが、前記第２の多
層磁性層の厚さ相当の範囲内で前記ギヤツプ長に
相当する厚さの非磁性膜厚さより薄く形成したこ
とを特徴とする薄膜磁気ヘツド。 ２ 前記第２の絶縁層の厚さが、前記非磁性膜の
略1/2以下であることを特徴とする特許請求の範
囲第１項記載の薄膜磁気ヘツド。 ３ 非磁性基板上に第１の絶縁層をはさんだ第１
の多層磁性膜をスパツタ等により被着させ、該磁
性膜の一部位をエツチングまたは切削等により除
去することによつて得られた第１の磁性膜の側面
にギヤツプ長に相当する長さの非磁性膜を被着さ
せ、しかるのち第２の絶縁層をはさんだ第２の多
層磁性膜を被着させ、前記側面に被着させた非磁
性膜を磁気ヘツドギヤツプとし、前記第２の多層
磁性膜を多層ならしむる前記第２の絶縁層を前記
ギヤツプより離して設けると共に該第２の絶縁層
の厚さを、前記多層磁性層の厚さ相当の範囲内で
前記第１の絶縁層厚さより薄く形成した薄膜磁気
ヘツドの製造方法において、ギヤツプをなす非磁
性膜の被着方向とは異なる方向から前記第２の多
層磁性膜を多層ならしむる前記第２の絶縁層を被
着形成することを特徴とした薄膜磁気ヘツドの製
造方法。[Claims] 1. A first insulating layer sandwiched on a non-magnetic substrate.
A multilayer magnetic film with a thickness corresponding to the gap length is deposited on the side surface of the first magnetic film obtained by depositing a multilayer magnetic film by sputtering or the like, and removing a part of the multilayer magnetic film by etching or cutting. A second layer is formed by depositing a non-magnetic film and then sandwiching a second insulating layer.
In a thin film magnetic head having a multilayer magnetic film coated thereon and a nonmagnetic film coated on the side surface serving as a magnetic head gap, the second insulating layer forming the second multilayer magnetic film is attached to the gap. The thickness of at least a portion of the second insulating layer that is substantially parallel to the gap is provided at a distance from the gap, and the thickness of the second insulating layer is within a range equivalent to the thickness of the second multilayer magnetic layer. A thin film magnetic head characterized by being formed thinner than the thickness of a magnetic film. 2. The thin film magnetic head according to claim 1, wherein the thickness of the second insulating layer is approximately 1/2 or less of the thickness of the nonmagnetic film. 3. A first insulating layer sandwiched on a non-magnetic substrate.
A multilayer magnetic film with a length corresponding to the gap length is formed on the side surface of the first magnetic film obtained by depositing a multilayer magnetic film by sputtering or the like and removing a part of the magnetic film by etching or cutting. A magnetic film is deposited, and then a second multilayer magnetic film sandwiching a second insulating layer is deposited, the nonmagnetic film deposited on the side surface is used as a magnetic head gap, and the second multilayer magnetic film is The second insulating layer having a multilayer structure is provided at a distance from the gap, and the thickness of the second insulating layer is less than the thickness of the first insulating layer within a range equivalent to the thickness of the multilayer magnetic layer. In the method for manufacturing a thin film magnetic head, the second insulating layer forming the second multilayer magnetic film is deposited in a direction different from the direction in which the nonmagnetic film forming the gap is deposited. A method for manufacturing a thin film magnetic head characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2429681A JPS57141009A (en) | 1981-02-23 | 1981-02-23 | Thin film magnetic head and its production |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2429681A JPS57141009A (en) | 1981-02-23 | 1981-02-23 | Thin film magnetic head and its production |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57141009A JPS57141009A (en) | 1982-09-01 |
| JPH0118495B2 true JPH0118495B2 (en) | 1989-04-06 |
Family
ID=12134196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2429681A Granted JPS57141009A (en) | 1981-02-23 | 1981-02-23 | Thin film magnetic head and its production |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57141009A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5952421A (en) * | 1982-09-17 | 1984-03-27 | Hitachi Ltd | Thin film magnetic head and its manufacture |
| JPS5996519A (en) * | 1982-11-24 | 1984-06-04 | Hitachi Ltd | Thin film magnetic head |
| JPS60254408A (en) * | 1984-05-31 | 1985-12-16 | Sankyo Seiki Mfg Co Ltd | Multiple-layer film magnetic head |
| JPS61113113A (en) * | 1984-11-07 | 1986-05-31 | Victor Co Of Japan Ltd | Thin-film magnetic head |
| FR2605783B1 (en) * | 1986-10-28 | 1992-05-15 | Thomson Csf | MAGNETIC HEAD FOR RECORDING/READING IN THIN LAYERS AND METHOD FOR MAKING IT |
| FR2640070A1 (en) * | 1988-12-06 | 1990-06-08 | Thomson Csf | Planar magnetic recording-reading head and method of manufacture |
| FR2806826B1 (en) | 2000-03-22 | 2002-11-29 | Commissariat Energie Atomique | INTEGRATED MAGNETIC HEAD FOR HELICOIDAL MAGNETIC RECORDING ON TAPE AND MANUFACTURING METHOD THEREOF |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509412A (en) * | 1973-05-23 | 1975-01-30 |
-
1981
- 1981-02-23 JP JP2429681A patent/JPS57141009A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS509412A (en) * | 1973-05-23 | 1975-01-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57141009A (en) | 1982-09-01 |
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