JPH01183113A - Vapor growth apparatus - Google Patents
Vapor growth apparatusInfo
- Publication number
- JPH01183113A JPH01183113A JP63006832A JP683288A JPH01183113A JP H01183113 A JPH01183113 A JP H01183113A JP 63006832 A JP63006832 A JP 63006832A JP 683288 A JP683288 A JP 683288A JP H01183113 A JPH01183113 A JP H01183113A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- wafer
- vapor phase
- growth apparatus
- phase growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 claims abstract description 53
- 239000012495 reaction gas Substances 0.000 claims abstract description 26
- 238000010438 heat treatment Methods 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 238000001947 vapour-phase growth Methods 0.000 claims description 35
- 239000010453 quartz Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 18
- 238000010790 dilution Methods 0.000 claims description 9
- 239000012895 dilution Substances 0.000 claims description 9
- 239000011261 inert gas Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 36
- 239000006227 byproduct Substances 0.000 abstract description 17
- 239000010408 film Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000000047 product Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔概要〕
半導体分野において、金属、絶縁物および半導体等の膜
の成長に用いられる気相成長装置に関し、ウェハ上以外
に生成される膜及び粉状副生成物を減少させることがで
き、それらが、ウェハ上に再付着することを防止して、
製品の歩留りを向上できる気相成長装置を提供すること
を目的とし、ウェハを収容した反応容器内に反応ガスを
導入し、該ウェハ表面に気相成長により膜を形成する気
相成長装置において、前記反応容器に反応ガスを加熱し
た状態で通過させるとともに、流速を速くするように細
かくしたガス排気路部を設けてなることを特徴とする気
相成長装置を含み構成する。Detailed Description of the Invention [Summary] In the semiconductor field, the present invention relates to a vapor phase growth apparatus used for growing films of metals, insulators, semiconductors, etc., and reduces the amount of films and powdery byproducts produced on surfaces other than wafers. and prevent them from re-depositing on the wafer.
The purpose of the present invention is to provide a vapor phase growth apparatus that can improve the yield of products, and in which a reaction gas is introduced into a reaction vessel containing a wafer, and a film is formed on the surface of the wafer by vapor phase growth. The present invention includes a vapor phase growth apparatus characterized in that a heated reaction gas passes through the reaction vessel and is provided with a narrow gas exhaust passage section to increase the flow rate.
本発明は、半導体分野において、金属、絶縁物および半
導体等の膜の成長に用いられる気相成長装置に関する。The present invention relates to a vapor phase growth apparatus used for growing films of metals, insulators, semiconductors, etc. in the semiconductor field.
半導体プロセスにおける気相成長（ＣＶＤ）技術は、一
種またはそれ以上の化合物、単体のガスを基板上に供給
し、熱、プラズマ、光等をエネルギー源として、気相ま
たは基板表面での化学反応により所望の薄膜を形成する
技術である。この技術を用いたＣＶＤ装置は、種々の形
式のものが開発されている。Vapor phase deposition (CVD) technology in the semiconductor process supplies one or more compounds or single gases onto a substrate, and uses heat, plasma, light, etc. as an energy source to perform a chemical reaction in the gas phase or on the substrate surface. This is a technique to form a desired thin film. Various types of CVD apparatuses using this technology have been developed.
第５図（ａ）は、従来のバッチ式の横型気相成長装置の
構造図で、同図において、気相成長装置は、石英管１内
にウェハ２を多数枚収容し、外側を覆うよう配設したヒ
ータ３で加熱し、該石英管１の一端側のガス導入口４よ
り反応ガスを導入し、他端側を細管状に形成したガス排
気口５より排気するよう構成されている。この気相成長
装置では、ガス導入口４より反応ガスとして、例えば５
ｉＨｚＣＬｚガス及びＮＨ３ガスを石英管１内に導入し
、圧力を１．０Ｔｏｎｎ 、温度を７５０°Ｃとするこ
とにより、ウェハ２上に窒化シリコン（Ｓｉ３Ｎａ）膜
を形成することができる。FIG. 5(a) is a structural diagram of a conventional batch type horizontal vapor phase growth apparatus. The quartz tube 1 is heated by a heater 3 provided therein, a reaction gas is introduced through a gas inlet 4 at one end of the quartz tube 1, and the reaction gas is exhausted through a gas exhaust port 5 formed in a thin tube shape at the other end. In this vapor phase growth apparatus, for example, 5
A silicon nitride (Si3Na) film can be formed on the wafer 2 by introducing iHzCLz gas and NH3 gas into the quartz tube 1 and setting the pressure to 1.0 Tonn and the temperature to 750°C.
また、第６図は、従来の枚葉式の平行平板型気相成長装
置の構成図で、同図において、この気相成長装置は、チ
ャンバ６内にウェハ７を収容し、該ウェハ７の下部に設
けたヒータ８で加熱し、上部に配設したガス導入部９よ
りシャワー状に反応ガスを導入し、チャンバ６下部側に
設けたガス排気口１０より排気するよう構成されている
。この気相成長装置では、上部のガス導入部９より反応
ガスをチャンバ６内にシャワー状に導入し、所定の圧力
と温度にすることにより、ウェハ７上に薄膜を形成する
ことができる。FIG. 6 is a configuration diagram of a conventional single-wafer type parallel plate type vapor phase growth apparatus. In the figure, this vapor phase growth apparatus accommodates a wafer 7 in a chamber 6. The reactor gas is heated by a heater 8 provided at the lower part of the chamber 6, a reaction gas is introduced in a shower form from a gas introduction section 9 provided at the upper part, and is exhausted from a gas exhaust port 10 provided at the lower part of the chamber 6. In this vapor phase growth apparatus, a thin film can be formed on the wafer 7 by introducing a reaction gas into the chamber 6 in a shower form from the upper gas introduction part 9 and creating a predetermined pressure and temperature.
しかし、上記従来の横型気相成長装置では、第５図（ｂ
）に示す如く、ヒータ３で加熱される石英管１内壁に膜
が形成されるとともに、ガス導入口４、ヒータで加熱さ
れない石英管１内壁、ガス排気口５等の低温部に粉状副
生成物が付着することがあった。また、上記従来の平行
平板型気相成長装置では、第６図に示す如く、チャンバ
６内壁及びガス排気口１０に粉状副生成物が付着するこ
とがあった。この粉状副生成物は、ウェハ製品の動作不
良等の問題を生じ、歩留り低下の原因となっていた。However, in the above-mentioned conventional horizontal vapor phase growth apparatus, as shown in FIG.
), a film is formed on the inner wall of the quartz tube 1 heated by the heater 3, and a powdery by-product is formed in low-temperature parts such as the gas inlet 4, the inner wall of the quartz tube 1 not heated by the heater, and the gas exhaust port 5. Sometimes things got stuck. Further, in the conventional parallel plate type vapor phase growth apparatus described above, powdery byproducts sometimes adhere to the inner wall of the chamber 6 and the gas exhaust port 10, as shown in FIG. This powdery byproduct causes problems such as malfunction of wafer products and causes a decrease in yield.
従来、上記問題点等を解決するために、成長圧力を減圧
化したり、ウェハの表面を下に向けたり、装置ロードロ
ック化等がおこなわれてきたが、十分に満足できるもの
ではなかった。Conventionally, in order to solve the above-mentioned problems, attempts have been made to reduce the growth pressure, to turn the wafer surface downward, to load-lock the apparatus, etc., but these have not been fully satisfactory.
そこで、本発明は、ウェハ上以外に生成される膜及び粉
状副生成物を減少させることができ、それらが、ウェハ
上に再付着することを防止して、製品の歩留りを向上で
きる気相成長装置を提供することを目的とする。Therefore, the present invention provides a gas phase that can reduce the film and powdery by-products generated other than on the wafer, prevent them from re-depositing on the wafer, and improve the yield of products. The purpose is to provide a growth device.
上記問題点は、ウェハを収容した反応容器内に反応ガス
を導入し、該ウェハ表面に気相成長により膜を形成する
気相成長装置において、前記反応容器に反応ガスを加熱
した状態で通過させるとともに、流速を速くするように
細かくしたガス排気路部を設けてなることを特徴とする
気相成長装置によって解決される。The above problem is solved in a vapor phase growth apparatus that introduces a reaction gas into a reaction container containing a wafer and forms a film on the surface of the wafer by vapor phase growth, in which the reaction gas is passed through the reaction container in a heated state. In addition, the problem is solved by a vapor phase growth apparatus characterized in that it is provided with a fine gas exhaust passage section to increase the flow velocity.
本発明は、ガス排気路部において流速が速くなり、ガス
停滞がなとなるとともに、反応ガスは加熱された状態で
反応し易くなっているが、ガス排気路部に低温部がない
ため、膜及び粉状副生成物の付着が減少し、従って、ウ
ェハ上にそれらのものが再付着することがなくなり、製
品の歩留りが向上する。In the present invention, the flow rate is increased in the gas exhaust path, gas stagnation is minimized, and the reaction gas is more likely to react in a heated state. However, since there is no low temperature part in the gas exhaust path, Deposition of and powdery by-products is reduced, thus eliminating their redeposition on the wafer and improving product yield.
以下図面を参照して、本発明の実施例を具体的に説明す
る。Embodiments of the present invention will be specifically described below with reference to the drawings.
第１図は、本発明の第１実施例にががるパッチ式の横型
気相成長装置の構成を示す図で、同図において気相成長
装置は反応管として内径が約２１０薗程度の石英管１１
を有し、その石英管１１内部に多数枚のウェハ１２が収
容される。この石英管１１の一端側には反応ガスを供給
するガス導入口１３が設けられ、他端側は内径を約２５
胴中程度に細（した排気管部１４を構成し、その端部を
曲折してガス排気口１５が設けられている。そして、石
英管１１の大径部分から排気管１４の外側を覆うようヒ
ータ１６が配設されている。FIG. 1 is a diagram showing the configuration of a patch type horizontal vapor phase growth apparatus according to a first embodiment of the present invention. tube 11
A large number of wafers 12 are housed inside the quartz tube 11. One end of this quartz tube 11 is provided with a gas inlet 13 for supplying a reaction gas, and the other end has an inner diameter of about 25 mm.
A gas exhaust port 15 is formed by bending the end of the exhaust pipe section 14, which is narrow in the middle of the body. A heater 16 is provided.
上記構成の気相成長装置では、ガス導入口１３より石英
管１１内部に反応ガスをあまり停滞しすぎない程度に導
入する。これにより、排気管部１４の内径は小さく形成
され、ヒータ１６で加熱しているため、その排気管部１
４ではさちにガス流速が速くなりガス停滞がなくなり、
また加熱された反応ガスが粉末成長し易い低温部もなく
なり、粉状副生成物の付着が抑えられる。従って、粉状
副生成物がウェハ１２に再付着することによる製品の動
作不良等がなくなり、製品の歩留が向上する。また、石
英管１１内部に膜または粉状副生成物の付着が抑えられ
るため、清掃のサイクルも長くすることができる。In the vapor phase growth apparatus having the above configuration, the reaction gas is introduced into the quartz tube 11 through the gas inlet 13 to the extent that it does not stagnate too much. As a result, the inner diameter of the exhaust pipe section 14 is made small, and since it is heated by the heater 16, the exhaust pipe section 14 is heated by the heater 16.
At 4, the gas flow rate quickly increases and gas stagnation disappears.
Furthermore, there is no low temperature section where the heated reaction gas tends to grow into powder, and the adhesion of powdery by-products is suppressed. Therefore, product malfunctions caused by re-adhesion of powdery by-products to the wafer 12 are eliminated, and the product yield is improved. Furthermore, since the adhesion of film or powdery by-products inside the quartz tube 11 is suppressed, the cleaning cycle can also be lengthened.
第２図は、本発明の第２実施例に係るバッチ式の横型気
相成長装置の構造で、第１図に対応する部分は同一の符
号を記しその詳細な説明を省略する。この実施例の気相
成長装置は、石英管１１の他方の端部側が細かく形成さ
れ、排気口２１になっている。上記石英管１１の他方の
端部側には、はぼ同径の希釈用管２２が連設されており
、この希釈用管２２内に排気口２１が開口されている。FIG. 2 shows the structure of a batch type horizontal vapor phase growth apparatus according to a second embodiment of the present invention, in which parts corresponding to those in FIG. 1 are denoted by the same reference numerals and detailed explanation thereof will be omitted. In the vapor phase growth apparatus of this embodiment, the other end of the quartz tube 11 is finely formed to form an exhaust port 21 . A dilution tube 22 of approximately the same diameter is connected to the other end of the quartz tube 11, and an exhaust port 21 is opened in the dilution tube 22.
上記希釈用管２２には、その側部から不活性ガス等の導
入管２３が連結され、かつ該希釈用管２２の端部側は細
く形成され、ガス排気口２４になっている。ヒータ１６
は石英管１１と希釈用管２２の周囲を加熱できる形状に
形成されている。An inlet pipe 23 for introducing an inert gas or the like is connected to the dilution pipe 22 from its side, and the end of the dilution pipe 22 is formed to be narrow and serves as a gas exhaust port 24 . Heater 16
is formed in a shape that can heat the surroundings of the quartz tube 11 and the dilution tube 22.
上記構成の気相成長装置では、第１実施例と同様に排気
口２１部分でガス流速が速くガス停滞がなくなり、ヒー
タ１６で加熱され低温部もなくなり粉状副生成物の付着
が抑えられる。また、この実施例では、希釈用管２２内
に導入管２３から、例えば、窒素（Ｎ２）ガス等を導入
し、排気口２１から希釈用管２２内に排出される反応ガ
スをＮ２ガスで希釈化するため、さらに粉状副生成物の
付着が抑えられる。In the vapor phase growth apparatus having the above configuration, similarly to the first embodiment, the gas flow rate is high at the exhaust port 21 portion, eliminating gas stagnation, and heating by the heater 16 eliminates a low-temperature portion, suppressing the adhesion of powdery byproducts. In addition, in this embodiment, for example, nitrogen (N2) gas is introduced into the dilution tube 22 from the introduction tube 23, and the reaction gas discharged into the dilution tube 22 from the exhaust port 21 is diluted with N2 gas. This further suppresses the adhesion of powdery by-products.
第３図は、本発明の第３実施例に係る枚葉式の平行平板
型気相成長装置の構成図、第４図は第３図の下部加熱体
部分の斜視図でしる。同図において、この気相成長装置
では、チャンバ３１を有し、このチャンバ３１にウェハ
３２が水平に配置される。FIG. 3 is a block diagram of a single-wafer type parallel plate type vapor phase growth apparatus according to a third embodiment of the present invention, and FIG. 4 is a perspective view of the lower heating body portion of FIG. 3. In the figure, this vapor phase growth apparatus has a chamber 31 in which a wafer 32 is placed horizontally.
ウェハ３２上部には、反応ガスをチャンバ３１内にシャ
ワー状に導入するためのガス導入部３３が設けられてい
る。また、ウェハ３２下部には、円板状で２段に形成さ
れた、上部加熱体３４が配設されている。A gas introduction section 33 is provided above the wafer 32 to introduce a reaction gas into the chamber 31 in the form of a shower. Further, an upper heating body 34 is disposed below the wafer 32 and has a disc shape and is formed in two stages.
上部加熱体３４と下部加熱体３５とは所定の間隔を設け
て配置されており、上部加熱体３４上面にウェハ３２が
載置され、下部加熱体３５の中央部には第４図に示す如
く細いガス排気管３６が設けられ、排気口がチャンバ３
１の下部に導出されている。The upper heating element 34 and the lower heating element 35 are arranged at a predetermined interval, and the wafer 32 is placed on the upper surface of the upper heating element 34, and a wafer 32 is placed in the center of the lower heating element 35 as shown in FIG. A thin gas exhaust pipe 36 is provided, and the exhaust port is connected to the chamber 3.
It is derived at the bottom of 1.
上記構成の気相成長装置では、反応ガスは導入部３３を
通りチャンバ３１内のウェハ３２にシャワー状に供給さ
れ、上部加熱体３４と下部加熱体３５との間を通りらら
にガス排気管を通って排気される。このとき反応ガスは
上部及び下部加熱体３４．３５で加熱され、細いガス排
気管３６を通るため、ガス流速が速くガス停滞がなくな
り粉状副生成物の付着が抑えられる。従って、前記実施
例と同様に粉状副生成物がウェハ３２に付着することに
よる製品の動作不良等がなくなり、製品の歩留りが向上
する。In the vapor phase growth apparatus having the above configuration, the reaction gas passes through the introduction section 33 and is supplied to the wafer 32 in the chamber 31 in the form of a shower. It passes through and is exhausted. At this time, the reaction gas is heated by the upper and lower heating elements 34, 35 and passes through the narrow gas exhaust pipe 36, so that the gas flow rate is high, eliminating gas stagnation and suppressing the adhesion of powdery byproducts. Therefore, similar to the embodiment described above, product malfunctions due to adhesion of powdery by-products to the wafer 32 are eliminated, and the product yield is improved.
なお、上記各実施例では、反応容器を石英管１１または
チャンバ６としているが、少なくともウェハが収容され
反応ガスが導入されるものであればよく、実施例の形状
、寸法に限定されない。また、第１及び第一２実施例に
おいては、排気管１４、排気口２１が加熱領域において
形成され、かつ流速が速くなるよう細く形成されていれ
ばよく、また第３実施例においても反応ガスが上部及び
下部加熱体３４．３５で加熱され、かつ流速が速く成る
ようガス排気管３６か細く形成されていればよい。In each of the above embodiments, the reaction vessel is the quartz tube 11 or the chamber 6, but it may be any vessel that at least accommodates a wafer and introduces a reaction gas, and is not limited to the shape and dimensions of the embodiments. Further, in the first and second embodiments, the exhaust pipe 14 and the exhaust port 21 are formed in the heating region and need only be formed thin so as to increase the flow rate, and in the third embodiment as well, It is sufficient that the gas exhaust pipe 36 is formed thin so that the gas is heated by the upper and lower heating elements 34 and 35 and the flow rate is high.
なお、上記実施例ではウェハ上に薄膜を形成する場合に
ついて説明したか、本発明の適用範囲はその場合に限定
されるものでなく、マスク上に薄膜を成長する場合にも
及ぶものである。In the above embodiments, the case where a thin film is formed on a wafer has been described, but the scope of application of the present invention is not limited to that case, but also extends to the case where a thin film is grown on a mask.
以上説明したように本発明によれば、気相成長装置にお
いて、反応ガスを加熱し、かつ流速を速くして排気する
ようにしているため、ガスの停滞がなくなりウェハ上以
外に生成される膜及び粉状副生成物を減少させることが
でき、ウェハ上に再付着を防止して、製品の歩留りを向
上できる。また、反応生成物の付着が抑えられるため、
清掃サイクルも長くすることができる。As explained above, according to the present invention, in the vapor phase growth apparatus, the reaction gas is heated and exhausted at a high flow rate, so that gas stagnation is eliminated and the film is not formed on the wafer. It is possible to reduce powdery by-products and prevent redeposition on the wafer, thereby improving product yield. In addition, because the adhesion of reaction products is suppressed,
Cleaning cycles can also be lengthened.
第１図は本発明第１実施例の気相成長装置の構成図、
第２図は本発明第２実施例の気相成長装置の構成図、
第３図は本発明第３実施例の気相成長装置の構成図、
第４図は第３図の下部加熱体部分の斜視図、第５図は従
来の横型気相成長装置の構成図、第６図は従来の平行平
板型気相成長装置の構成図である。
図中、
１１は石英管、
１２．３２はウェハ、
１３はガス導入口、
１４は排気管部、
１５．２４はガス排気口、
１６はヒータ、
２１は排気口、
２２は希釈管、
２３は不活性ガス導入管、
３１はチャンバ、
３３はガス導入部、
３４は上部加熱体、
３５は下部加熱体、
３６はガス排気管、
を示す。
特許出願人 富士通株式会社
′ 代理人弁理士 久木元 彰
囲
ｒつ
臀1 is a block diagram of a vapor phase growth apparatus according to a first embodiment of the present invention, FIG. 2 is a block diagram of a vapor phase growth apparatus according to a second embodiment of the present invention, and FIG. 3 is a block diagram of a vapor phase growth apparatus according to a third embodiment of the present invention. Figure 4 is a perspective view of the lower heating element in Figure 3, Figure 5 is a diagram of a conventional horizontal vapor phase growth apparatus, and Figure 6 is a conventional parallel plate type vapor phase growth apparatus. It is a block diagram of a device. In the figure, 11 is a quartz tube, 12.32 is a wafer, 13 is a gas inlet, 14 is an exhaust pipe, 15.24 is a gas exhaust port, 16 is a heater, 21 is an exhaust port, 22 is a dilution pipe, 23 is a 31 is a chamber; 33 is a gas introduction section; 34 is an upper heating element; 35 is a lower heating element; 36 is a gas exhaust pipe. Patent Applicant: Fujitsu Limited' Representative Patent Attorney: Moto Kuki
Claims (4)
応ガスを導入し、該ウェハ（１２、３２）表面に気相成
長により膜を形成する気相成長装置において、前記反応
容器（１１、３１）に反応ガスを加熱した状態で通過さ
せるとともに、流速を速くするよう細かくしたガス排気
路部を設けてなることを特徴とする気相成長装置。(1) A vapor phase growth apparatus in which a reaction gas is introduced into a reaction vessel containing a wafer (12, 32) and a film is formed on the surface of the wafer (12, 32) by vapor phase growth. , 31) A vapor phase growth apparatus characterized in that a heated reaction gas is passed through the reactor gas and a fine gas exhaust passage is provided to increase the flow rate.
石英（１１）であり、前記ガス排気路部は、該石英管（
１１）の一端側の加熱領域に細かく形成した排気管部（
１４）を設けてなることを特徴とする特許請求の範囲第
１項記載の気相成長装置。(2) The reaction vessel is made of quartz (11) surrounded by a heater (16), and the gas exhaust path section is made of quartz tube (11).
11) Exhaust pipe part (
14) The vapor phase growth apparatus according to claim 1, characterized in that it is provided with: 14).
石英管（１１）であり、前記ガス排気路部は該石英管（
１１）の一端の加熱領域に細かく形成した排気口（２１
）を不活性ガスが流通する希釈用管（２２）内に開口せ
しめてなることを特徴とする特許請求の範囲第１項記載
の気相成長装置。(3) The reaction vessel is a quartz tube (11) surrounded by a heater (16), and the gas exhaust path section is a quartz tube (11) surrounded by a heater (16).
Exhaust port (21) finely formed in the heating area at one end of 11)
) is opened into a dilution pipe (22) through which an inert gas flows.
たチャンバ（３１）であり、前記ガス排気路部は、該チ
ャンバ３１内のウェハ（３２）の下部に設けられた２段
状の上部加熱体（３４）及び下部加熱体（３５）と、該
下部加熱体（３５）に設けられたガス排気管（３６）と
で形成されてなることを特徴とする特許請求の範囲第１
項記載の気相成長装置。(4) The reaction container is a chamber (31) that horizontally accommodates a wafer (32), and the gas exhaust path section is a two-tiered chamber provided below the wafer (32) in the chamber 31. Claim 1, characterized in that it is formed by an upper heating element (34), a lower heating element (35), and a gas exhaust pipe (36) provided on the lower heating element (35).
Vapor phase growth apparatus described in Section 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63006832A JPH01183113A (en) | 1988-01-18 | 1988-01-18 | Vapor growth apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63006832A JPH01183113A (en) | 1988-01-18 | 1988-01-18 | Vapor growth apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01183113A true JPH01183113A (en) | 1989-07-20 |
Family
ID=11649201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63006832A Pending JPH01183113A (en) | 1988-01-18 | 1988-01-18 | Vapor growth apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01183113A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209101A (en) * | 2002-01-17 | 2003-07-25 | Tokura Kogyo Kk | Method for preventing deposition of ammonium chloride in cvd exhaust piping |
| WO2016190006A1 (en) * | 2015-05-26 | 2016-12-01 | 株式会社日本製鋼所 | Atomic layer growth device and atomic layer growth device exhaust unit |
| US10508338B2 (en) | 2015-05-26 | 2019-12-17 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
| US10519549B2 (en) | 2015-05-26 | 2019-12-31 | The Japan Steel Works, Ltd. | Apparatus for plasma atomic layer deposition |
| US10633737B2 (en) | 2015-05-26 | 2020-04-28 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5889821A (en) * | 1981-11-24 | 1983-05-28 | Canon Inc | Manufacturing device of deposited film |
| JPS59232990A (en) * | 1983-06-13 | 1984-12-27 | Matsushita Electric Ind Co Ltd | Vacuum vapor phase growth device |
-
1988
- 1988-01-18 JP JP63006832A patent/JPH01183113A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5889821A (en) * | 1981-11-24 | 1983-05-28 | Canon Inc | Manufacturing device of deposited film |
| JPS59232990A (en) * | 1983-06-13 | 1984-12-27 | Matsushita Electric Ind Co Ltd | Vacuum vapor phase growth device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003209101A (en) * | 2002-01-17 | 2003-07-25 | Tokura Kogyo Kk | Method for preventing deposition of ammonium chloride in cvd exhaust piping |
| WO2016190006A1 (en) * | 2015-05-26 | 2016-12-01 | 株式会社日本製鋼所 | Atomic layer growth device and atomic layer growth device exhaust unit |
| JP2016222940A (en) * | 2015-05-26 | 2016-12-28 | 株式会社日本製鋼所 | Atomic layer growth device and exhaust part of atomic layer device |
| CN107614750A (en) * | 2015-05-26 | 2018-01-19 | 株式会社日本制钢所 | Atomic layer growth device and atomic layer growth device exhaust portion |
| US10508338B2 (en) | 2015-05-26 | 2019-12-17 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
| US10519549B2 (en) | 2015-05-26 | 2019-12-31 | The Japan Steel Works, Ltd. | Apparatus for plasma atomic layer deposition |
| US10604838B2 (en) | 2015-05-26 | 2020-03-31 | The Japan Steel Works, Ltd. | Apparatus for atomic layer deposition and exhaust unit for apparatus for atomic layer deposition |
| CN107614750B (en) * | 2015-05-26 | 2020-04-24 | 株式会社日本制钢所 | Atomic layer growth device and exhaust unit of atomic layer growth device |
| US10633737B2 (en) | 2015-05-26 | 2020-04-28 | The Japan Steel Works, Ltd. | Device for atomic layer deposition |
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