JPH01180964A - Metallic ir for vacuum deposition - Google Patents
Metallic ir for vacuum depositionInfo
- Publication number
- JPH01180964A JPH01180964A JP217388A JP217388A JPH01180964A JP H01180964 A JPH01180964 A JP H01180964A JP 217388 A JP217388 A JP 217388A JP 217388 A JP217388 A JP 217388A JP H01180964 A JPH01180964 A JP H01180964A
- Authority
- JP
- Japan
- Prior art keywords
- 1ppm
- less
- ppm
- elements
- vacuum deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 22
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000009835 boiling Methods 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 229910052708 sodium Inorganic materials 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 abstract description 9
- 230000008020 evaporation Effects 0.000 abstract description 8
- 239000012535 impurity Substances 0.000 abstract description 7
- 230000008018 melting Effects 0.000 abstract description 5
- 238000002844 melting Methods 0.000 abstract description 5
- 229910052749 magnesium Inorganic materials 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、リードスイッチ用接点材料などに使用される
真空蒸着用Ｉｒ金属に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an Ir metal for vacuum deposition used as a contact material for reed switches and the like.
（従来の技術とその問題点）
従来よりＩｒは、通常９９．９５％のものが純Ｉｒとし
て、真空蒸着材料に使用されている。(Prior art and its problems) Conventionally, Ir has been used in vacuum evaporation materials, usually with 99.95% pure Ir.
ところで、このＩｒの真空蒸着材料の中には不純物とし
て多数の元素が微量存在しているので、真空蒸着時に溶
融状態のＩｒか突沸したり、飛散したりして、溶融Ｉｒ
が基板に付着し、平滑な膜が得られないものである。By the way, this Ir vacuum evaporation material contains a small amount of many elements as impurities, so during vacuum evaporation, the molten Ir may bump or scatter.
adheres to the substrate, making it impossible to obtain a smooth film.
これはＩｒの融点が２２８０℃であるが、不純物として
微量存在する多数の元素の沸点は殆んどそれ以下である
為、溶融Ｉｒ中ではそれらの元素が選択的にしかも突沸
的に蒸発するからである。This is because the melting point of Ir is 2280°C, but the boiling points of many elements that exist in trace amounts as impurities are almost all lower than that, so these elements evaporate selectively and bumpingly in molten Ir. It is.
（発明の目的）
本発明は、上記問題点を解決すべくなされたもので、不
純物として存在する多数の元素の含有量を少なくして、
真空蒸着時それらの元素の蒸発を少なくし、溶融Ｉｒが
突沸したり、飛散したりするのを減少するようにした真
空蒸着用Ｉｒ金属を提供することを目的とするものであ
る。(Object of the Invention) The present invention has been made to solve the above problems, and by reducing the content of many elements that exist as impurities,
The object of the present invention is to provide an Ir metal for vacuum deposition, which reduces evaporation of these elements during vacuum deposition and reduces bumping and scattering of molten Ir.
（問題点を解決するための手段）
上記問題点を解決するための本発明の真空蒸着用Ｉｒ金
属は、重量比で、Ｃｄが１ＰＰＭ以下、Ａｓが１ＰＰＭ
以下、Ｎａが１ＰＰＭ以下、Ｋが１ＰＰＭ以下、Ｚｎが
１ＰＰＭ以下、Ｍｇが３ＰＰＭ以下、Ｓｒが１ＰＰＭ以
下、Ｃａが３ＰＰＭ以下、Ｂｉが１ＰＰＭ以下、Ｓｂが
１ＰＰＭ以下、Ｂａが１ＰＰＭ以下、Ｐｂが１ＰＰＭ以
下、Ａｆｆｉが２０ＰＰＭ以下、Ｉｎが１ＰＰＭ以下、
Ｍｎが１ＰＰＭ以下、Ａｇが１ＰＰＭ以下、Ｓｌが１０
ＰＰＭ以下、Ｓｎが１ＰＰＭ以下で、これら元素の総量
が３０ＰＰＭ以下であり、且つＩｒの純度が重量比で９
９．９８％以上であることを特徴どするものである。(Means for Solving the Problems) In order to solve the above problems, the Ir metal for vacuum deposition of the present invention has a weight ratio of Cd of 1 PPM or less and As of 1 PPM.
Below, Na is 1PPM or less, K is 1PPM or less, Zn is 1PPM or less, Mg is 3PPM or less, Sr is 1PPM or less, Ca is 3PPM or less, Bi is 1PPM or less, Sb is 1PPM or less, Ba is 1PPM or less, Pb is 1PPM or less. Below, Affi is 20PPM or less, In is 1PPM or less,
Mn is 1 PPM or less, Ag is 1 PPM or less, Sl is 10
PPM or less, Sn is 1 PPM or less, the total amount of these elements is 30 PPM or less, and the purity of Ir is 9 by weight ratio.
It is characterized by being 9.98% or more.
また、本発明の真空蒸着用Ｉｒ金属は、沸点が１０００
℃以下のＣｄ、Ａｓ、Ｎａ、Ｋ、Ｚｎの元素が総量で重
量比３ＰＰＭ以下であることも特徴である。Further, the Ir metal for vacuum deposition of the present invention has a boiling point of 1000
Another feature is that the total amount of the elements Cd, As, Na, K, and Zn below 3 PPM by weight is 3 PPM or below.
さらに本発明の真空蒸着用Ｉｒ金属は、沸点が１０００
℃〜２０００℃のＭｇ、、Ｓｒ、Ｃａ、、Ｂ １ＸＳｂ
。Furthermore, the Ir metal for vacuum deposition of the present invention has a boiling point of 1000
℃~2000℃ Mg,,Sr,Ca,,B 1XSb
.
Ｂａ、Ｐｂの元素が総量で重量比７ＰＰＭ以下であるこ
とも特徴である。Another feature is that the total amount of elements Ba and Pb is 7 PPM or less by weight.
さらにまた本発明の真空蒸着用Ｉｒ金属は、沸点が２０
００℃を超えるＡｌ、Ｉｎ、Ｍｎ、Ａｇ、Ｓｉ、Ｓｎの
元素が総量で重量比２０ＰＰＭ以下であることも特徴で
ある。Furthermore, the Ir metal for vacuum deposition of the present invention has a boiling point of 20
Another feature is that the total amount of the elements Al, In, Mn, Ag, Si, and Sn, which exceed 00° C., is 20 PPM or less by weight.
本発明の真空蒸着用Ｉｒ金属に於いて、各元素の重量比
の上限を前述の如く限定した理由は、各元素の重量比が
上限を超えると、真空蒸着時各元素が突沸的に蒸発する
為である。また各元素の総量を３０ＰＰＭ以下に限定し
た理由は、３０ＰＰＭを超えると真空蒸着時含有する元
素の蒸発が極端に増加するからである。The reason for limiting the upper limit of the weight ratio of each element in the Ir metal for vacuum deposition of the present invention as described above is that if the weight ratio of each element exceeds the upper limit, each element evaporates in a bumping manner during vacuum deposition. It is for this purpose. Further, the reason why the total amount of each element is limited to 30 PPM or less is that if it exceeds 30 PPM, the evaporation of the elements contained during vacuum deposition will increase dramatically.
沸点が１０００℃以下の蒸気圧の高いＣｄ、Ａｓ、Ｎａ
、Ｋ、Ｚｎの元素の総量を重量比で３ＰＰＭ以下にした
理由は、真空蒸着時それらの元素の蒸発をなくし、溶融
Ｉｒの突沸を減少するためである。Cd, As, Na with boiling point below 1000℃ and high vapor pressure
, K, and Zn to a weight ratio of 3 PPM or less is to eliminate evaporation of these elements during vacuum deposition and reduce bumping of molten Ir.
沸点が１０００℃〜２０００℃の蒸気圧の低いＭｇ、Ｓ
ｒ、Ｃａ、Ｂｉ、Ｓｂ、Ｂａ、Ｐｂの元素の総量を重量
比で７ＰＰＭ以下にした理由は、真空蒸着時それらの元
素の蒸発を少なくし、溶融Ｉｒの突沸を減少する為であ
る。Mg, S with a boiling point of 1000°C to 2000°C and low vapor pressure
The reason why the total amount of the elements r, Ca, Bi, Sb, Ba, and Pb is set to 7 PPM or less by weight is to reduce evaporation of these elements during vacuum deposition and reduce bumping of molten Ir.
沸点が２０００″Ｃを超える蒸気圧の極めて低いＡｌ、
Ｉ ｎ、Ｍｎ、Ａｇ、Ｓ ｉ、Ｓｎの元素の総量を重量
比で２０ＰＰＭ以下にした理由は、真空蒸着時それらの
元素の蒸発を少なくし、溶融Ｉｒの突沸を減少する為で
ある。Al with extremely low vapor pressure and a boiling point exceeding 2000″C;
The reason why the total amount of the elements In, Mn, Ag, Si, and Sn is set to 20 PPM or less by weight is to reduce evaporation of these elements during vacuum deposition and reduce bumping of molten Ir.
Ｉｒを重量比で９９．９８％としたのは、Ｉｒの純度を
より高める為である。The reason why Ir was set at 99.98% by weight was to further increase the purity of Ir.
（実施例）
本発明による真空蒸着用Ｉｒ金属の実施例及び比較例に
ついて説明する。不純物として多数の元素を含有するＩ
ｒを予めアーク溶解炉や電子ビーム溶解炉で５分以上溶
解して、Ｉｒより蒸気圧の高い各元素を選択的に蒸発さ
せて、下記の表に示す成分組成の実施例１〜８及び比較
例１〜４の真空蒸着用Ｉｒ金属を得た。(Example) Examples and comparative examples of Ir metal for vacuum deposition according to the present invention will be described. I containing many elements as impurities
By melting r in advance for 5 minutes or more in an arc melting furnace or an electron beam melting furnace and selectively evaporating each element with a higher vapor pressure than Ir, Examples 1 to 8 and comparisons of the component compositions shown in the table below were prepared. Ir metals for vacuum deposition of Examples 1 to 4 were obtained.
これら実施例及び比較例の真空蒸着用Ｉｒ金属を基板に
真空蒸着した処、当初の１分間で下記の表の右端欄に示
すような回数の突沸かあった。When the Ir metal for vacuum deposition of these Examples and Comparative Examples was vacuum deposited on a substrate, bumping occurred as many times as shown in the right column of the table below in the first minute.
（以下余白）
上記の表で明らかなように比較例１〜４の真空蒸着用Ｉ
ｒ金属は、真空蒸着時の微量に含有する元素の蒸発によ
る溶融Ｉｒの突沸回数が３〜５回と多いのに対し、実施
例１〜８の真空蒸着用Ｉｒ金属は、真空蒸着時の微量に
含有する元素の蒸発による溶融Ｉｒの突沸回数が０〜１
回と極めて少ないことが判る。これはひとえにＩｒ中に
含有するＣｄ、Ａｓ、Ｎａ、Ｋ、Ｚｎの各々が１ＰＰＭ
以下で、Ｍｇ、Ｃａが３ＰＰＭ以下、Ｓｒ、Ｂｉ、Ｓｂ
、Ｂａ、Ｐｂの各々が１ＰＰＭ以下で、Ａ！２０ＰＰＭ
以下、ＳＳｉ１０ＰＰ、Ｉ ｎ、Ｍｎ、Ａｇ、Ｓｎの各
々が１ＰＰＭであり、これら元素の総量が３０ＰＰＭ以
下であるからである。(Left below) As is clear from the table above, I
With r metal, the number of bumping times of molten Ir due to evaporation of trace amounts of elements during vacuum evaporation is as many as 3 to 5 times. The number of bumping times of molten Ir due to evaporation of elements contained in is 0 to 1
It turns out that there are very few times. This simply means that each of Cd, As, Na, K, and Zn contained in Ir is 1 PPM.
Below, Mg, Ca is 3 PPM or less, Sr, Bi, Sb
, Ba, and Pb are each 1 PPM or less, and A! 20PPM
Hereinafter, each of SSi10PP, In, Mn, Ag, and Sn is 1 PPM, and the total amount of these elements is 30 PPM or less.
そして沸点１０００’Ｃ以下の元素の総量が３ＰＰＭ以
下、沸点１０００〜２０００℃の元素の総量が７ＰＰＭ
以下、沸点２０００℃以上の元素の総量が２０ＰＰＭ以
下であるからである。The total amount of elements with a boiling point of 1000'C or less is 3 PPM or less, and the total amount of elements with a boiling point of 1000-2000°C is 7 PPM.
This is because the total amount of elements having a boiling point of 2000° C. or higher is 20 PPM or less.
（発明の効果）
以上の説明で判るように本発明の真空蒸着用Ｉｒ金属は
、不純物として存在する多数の元素の含有量を少なくし
であるので、真空蒸着時それら元素の蒸発が少なく、溶
融Ｉｒの突沸や飛散が著しく減少し、平滑な膜を形成で
きるという効果がある。(Effects of the Invention) As can be seen from the above explanation, the Ir metal for vacuum deposition of the present invention has a reduced content of many elements that exist as impurities. Bumping and scattering of Ir are significantly reduced, and a smooth film can be formed.
出願人 田中貴金属工業株式会社Applicant: Tanaka Kikinzoku Kogyo Co., Ltd.
Claims (4)
以下、Ｎａが１ＰＰＭ以下、Ｋが１ＰＰＭ以下、Ｚｎが
１ＰＰＭ以下、Ｍｇが３ＰＰＭ以下、Ｓｒが１ＰＰＭ以
下、Ｃａが３ＰＰＭ以下、Ｂｉが１ＰＰＭ以下、Ｓｂが
１ＰＰＭ以下、Ｂａが１ＰＰＭ以下、Ｐｂが１ＰＰＭ以
下、Ａｌが２０ＰＰＭ以下、Ｉｎが１ＰＰＭ以下、Ｍｎ
が１ＰＰＭ以下、Ａｇが１ＰＰＭ以下、Ｓｉが１０ＰＰ
Ｍ以下、Ｓｎが１ＰＰＭ以下で、これら元素の総量が３
０ＰＰＭ以下であり、且つＩｒの純度が重量比で９９．
９８％以上であることを特徴とする真空蒸着用Ｉｒ金属
。(1) In terms of weight ratio, Cd is 1 PPM or less, As is 1 PPM
Below, Na is 1PPM or less, K is 1PPM or less, Zn is 1PPM or less, Mg is 3PPM or less, Sr is 1PPM or less, Ca is 3PPM or less, Bi is 1PPM or less, Sb is 1PPM or less, Ba is 1PPM or less, Pb is 1PPM or less. Below, Al is 20PPM or less, In is 1PPM or less, Mn
is 1PPM or less, Ag is 1PPM or less, Si is 10PP
M or less, Sn is 1 PPM or less, and the total amount of these elements is 3
0 PPM or less, and the purity of Ir is 99.
98% or more of Ir metal for vacuum deposition.
Ｎａ、Ｋ、Ｚｎの元素が総量で３ＰＰＭ以下であること
を特徴とする特許請求の範囲第１項記載の真空蒸着用Ｉ
ｒ金属。(2) Cd, As, with a boiling point of 1000°C or less in terms of weight ratio,
I for vacuum deposition according to claim 1, characterized in that the total amount of the elements Na, K, and Zn is 3 PPM or less
r metal.
、Ｓｒ、Ｃａ、Ｂｉ、Ｓｂ、Ｂａ、Ｐｂの元素が総量で
７ＰＰＭ以下であることを特徴とする特許請求の範囲第
１項記載の真空蒸着用Ｉｒ金属。(3) Mg with a boiling point of 1000°C to 2000°C by weight
, Sr, Ca, Bi, Sb, Ba, and Pb in a total amount of 7 PPM or less.
、Ｍｎ、Ａｇ、Ｓｉ、Ｓｎの元素が総量で２０ＰＰＭ以
下であることを特徴とする特許請求の範囲第１項記載の
真空蒸着用Ｉｒ金属。(4) Al, In with a boiling point exceeding 2000°C in terms of weight ratio
, Mn, Ag, Si, and Sn in a total amount of 20 PPM or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP217388A JPH01180964A (en) | 1988-01-08 | 1988-01-08 | Metallic ir for vacuum deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP217388A JPH01180964A (en) | 1988-01-08 | 1988-01-08 | Metallic ir for vacuum deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01180964A true JPH01180964A (en) | 1989-07-18 |
Family
ID=11521974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP217388A Pending JPH01180964A (en) | 1988-01-08 | 1988-01-08 | Metallic ir for vacuum deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01180964A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009107289A1 (en) * | 2008-02-27 | 2009-09-03 | 田中貴金属工業株式会社 | Iridium alloy excellent in hardness, processability and stain proofness |
-
1988
- 1988-01-08 JP JP217388A patent/JPH01180964A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009107289A1 (en) * | 2008-02-27 | 2009-09-03 | 田中貴金属工業株式会社 | Iridium alloy excellent in hardness, processability and stain proofness |
| US9063173B2 (en) | 2008-02-27 | 2015-06-23 | Tanaka Kikinzoku Kogyo K.K. | Iridium alloy excellent in hardness, workability and anti-contamination properties |
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