JPH01176693A - Manufacture of far infrared radiator - Google Patents
Manufacture of far infrared radiatorInfo
- Publication number
- JPH01176693A JPH01176693A JP33594087A JP33594087A JPH01176693A JP H01176693 A JPH01176693 A JP H01176693A JP 33594087 A JP33594087 A JP 33594087A JP 33594087 A JP33594087 A JP 33594087A JP H01176693 A JPH01176693 A JP H01176693A
- Authority
- JP
- Japan
- Prior art keywords
- metal alkoxide
- infrared radiator
- sol solution
- heat treatment
- far infrared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 21
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 7
- 230000003301 hydrolyzing effect Effects 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000012528 membrane Substances 0.000 abstract 1
- -1 silicon alkoxide Chemical class 0.000 description 14
- 239000000243 solution Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 238000006460 hydrolysis reaction Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003125 aqueous solvent Substances 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 2
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 210000003754 fetus Anatomy 0.000 description 1
- 238000001879 gelation Methods 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- CRNJBCMSTRNIOX-UHFFFAOYSA-N methanolate silicon(4+) Chemical compound [Si+4].[O-]C.[O-]C.[O-]C.[O-]C CRNJBCMSTRNIOX-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- BCWYYHBWCZYDNB-UHFFFAOYSA-N propan-2-ol;zirconium Chemical compound [Zr].CC(C)O.CC(C)O.CC(C)O.CC(C)O BCWYYHBWCZYDNB-UHFFFAOYSA-N 0.000 description 1
- 125000002572 propoxy group Chemical group [*]OC([H])([H])C(C([H])([H])[H])([H])[H] 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
- Resistance Heating (AREA)
Abstract
Description
【発明の詳細な説明】
槍粟上Δ杖叩分顆
本発明は、発熱体として用いられるセラミクスまたはガ
ラス製の遠赤外放射体に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a far-infrared radiator made of ceramics or glass and used as a heating element.
従来技術とその問題点
従来、遠赤外線セラミクスを用いたヒーターとしては、
チューブ状、板状、ランプ状などの形状のものが知られ
ている。これらは金属発熱体をセラミクス内部に埋め込
んだり、金属表面にセラミクスをプラズマ溶射すること
により製造される。Conventional technology and its problems Conventionally, heaters using far-infrared ceramics
Shapes such as tube, plate, and lamp shapes are known. These are manufactured by embedding a metal heating element inside ceramics or by plasma spraying ceramics onto a metal surface.
しかしながら、セラミクスは加工が困難であり、またプ
ラズマコーティングは非常にコストが高くなるという問
題点がある。However, there are problems in that ceramics are difficult to process and plasma coating is very expensive.
本発明は、液相状態のセラミクスまたはガラス原料混合
物を基板、もしくは発熱体に直接塗布することにより、
遠赤外線放射体とするもので、製品への加工が容易で安
価な遠赤外線放射体を製造することを目的とする。The present invention can achieve
The purpose is to manufacture a far-infrared radiator that is easy to process into products and is inexpensive.
問題点を解決するための手段
本発明は少なくとも1種以上の金属アルコキシドを加水
分解してなるゾル溶液を基材表面に塗布し、ゲル化させ
加熱処理を行うことを特徴とする遠赤外線放射体の製造
方法を提供するものである。Means for Solving the Problems The present invention provides a far-infrared radiator characterized in that a sol solution obtained by hydrolyzing at least one metal alkoxide is applied to the surface of a base material, gelled, and heat-treated. The present invention provides a method for manufacturing.
本発明に用いられる金属アルコキシドとしては、置換、
非置換の金属アルコキシドおよびこれらの混合物が用い
られ、この水性溶液を加水分解してゾル溶液を得る。The metal alkoxide used in the present invention includes substituted,
Unsubstituted metal alkoxides and mixtures thereof are used to hydrolyze the aqueous solution to obtain a sol solution.
該金属アルコキシドとしては、加熱処理して脱水するこ
とによりゲルを生ずるものであればよく、例えば、シリ
コンアルコキシド、ジルコニウムアルコキシド、チタン
アルコキシド、アルミニウムアルコキシド、ボロンアル
コキシド、ナトリウムアルコキシド、カルシウムアルコ
キシド、ニッケルアルコキシド、鉄アルコキシド、銅ア
ルコキシド、コバルトアルコキシド、マンガンアルコキ
シド等が挙げられるが、シリコンアルコキシド、ジルコ
ニウムアルコキシド、チタンアルコキシドが好ましい。The metal alkoxide may be one that forms a gel when dehydrated by heat treatment, such as silicon alkoxide, zirconium alkoxide, titanium alkoxide, aluminum alkoxide, boron alkoxide, sodium alkoxide, calcium alkoxide, nickel alkoxide, iron. Examples include alkoxides, copper alkoxides, cobalt alkoxides, manganese alkoxides, and the like, with silicon alkoxides, zirconium alkoxides, and titanium alkoxides being preferred.
また、アルコキシ基としては低級アルコキシ基が好まし
く、例えばメトキシ基、エトキシ基、プロポキシ基等が
挙げられる。従って、上記金属アルコキシドとしては、
シリコンテトラエトキシドS i (OC2H5)4、
シリコンテトラメトキシド5i(OCR,)。Further, as the alkoxy group, a lower alkoxy group is preferable, and examples thereof include a methoxy group, an ethoxy group, a propoxy group, and the like. Therefore, the metal alkoxides include silicon tetraethoxide S i (OC2H5)4,
Silicon tetramethoxide 5i (OCR,).
テトライ゛ノブロポキシチタンT i (iso−Ca
H2)t、トリセカンダリ−ブトキシアルミニウム、テ
トライソプロポキシジルコニウムZ r (OCaI2
)−等が好ましい。Tetra-inopropoxy titanium Ti (iso-Ca
H2)t, trisec-butoxyaluminum, tetraisopropoxyzirconium Zr (OCaI2
)- etc. are preferred.
また、上記金属アルコキシドのアルコキシ基は、低級ア
ルキル基、ビニル基等の脂肪族炭化水素基、あるいはフ
ェニル基、またはメチル、エチルもしくはプロピル基等
の低級アルキル基で置換されたフェニル基などの芳香族
炭化水素基、さらには、メチル、エチルもしくはプロピ
ル基等の低級アルキル基で置換されたアルキル置換アミ
ノ基にて置、換されてもよい。In addition, the alkoxy group of the above metal alkoxide is a lower alkyl group, an aliphatic hydrocarbon group such as a vinyl group, or an aromatic group such as a phenyl group, or a phenyl group substituted with a lower alkyl group such as methyl, ethyl or propyl group. It may be substituted with a hydrocarbon group, or an alkyl-substituted amino group substituted with a lower alkyl group such as a methyl, ethyl or propyl group.
上記金属アルコキシドまたは金属アルコキシドと置換金
属アルコキシドとの混合物を含有する水性溶媒としては
、水とメタノール、エタノール、プロパーノール等の低
級アルコールとの混合溶液が用いられる。As the aqueous solvent containing the metal alkoxide or the mixture of metal alkoxide and substituted metal alkoxide, a mixed solution of water and a lower alcohol such as methanol, ethanol, propanol, etc. is used.
また加水分解触媒は、塩酸、硫酸、アンモニア水溶液、
トリエチルアミンなどの有機アミン等が用いられる。In addition, hydrolysis catalysts include hydrochloric acid, sulfuric acid, ammonia aqueous solution,
Organic amines such as triethylamine are used.
金属アルコキシドおよび/または置換金属アルコキシド
からなる水性溶液を加水分解してゾル溶液とする場合、
これら水性溶液に前記加水分解触媒を添加して常温で撹
拌して行うことができるが、若干昇温して加水分解反応
を速めてもよい。また上記加水分解反応は、金属アルコ
キシド、置換金属アルコキシド、水性溶媒および加水分
解触媒を同時に添加混合して行ってもよい。When an aqueous solution consisting of a metal alkoxide and/or a substituted metal alkoxide is hydrolyzed to form a sol solution,
This can be carried out by adding the hydrolysis catalyst to these aqueous solutions and stirring at room temperature, but the hydrolysis reaction may also be accelerated by slightly raising the temperature. Further, the above hydrolysis reaction may be carried out by simultaneously adding and mixing a metal alkoxide, a substituted metal alkoxide, an aqueous solvent, and a hydrolysis catalyst.
さらに、該ゾル溶液中には金属酸化物の粉末を加えると
製膜性が向上し好ましい。かかる金属酸化物としてはS
in、、Fat’s、MgO,AL03、Cu 01Z
rOa、Ti1t、N i Oなどが挙げられる。また
、かかる粉末は粒径Q、1〜1000μmのものが好ま
しい。Furthermore, it is preferable to add metal oxide powder to the sol solution because it improves film forming properties. As such a metal oxide, S
in,, Fat's, MgO, AL03, Cu 01Z
Examples include rOa, Tilt, N i O, and the like. Further, such powder preferably has a particle size Q of 1 to 1000 μm.
ついて、該ゾル溶液を基板に塗布する。基板としては、
ガラス、鉄、アルミニウム板など、従来放射体の基板と
して用いられるものがいずれも好適に用い得る。Then, the sol solution is applied to the substrate. As a substrate,
Any substrate conventionally used for a radiator, such as glass, iron, or aluminum plate, can be suitably used.
また、ゾル溶液を基板に付着させるには、塗布のほかス
プレーを用いてもよく、基板をゾル溶液に浸漬してもよ
い。加熱処理は600〜1200℃にて10時間程度行
なうのが好ましい。In addition to coating, spraying may be used to adhere the sol solution to the substrate, or the substrate may be immersed in the sol solution. The heat treatment is preferably carried out at 600 to 1200°C for about 10 hours.
及買鮭
つぎに本発明を実施例にもとづきさらに具体的に説明す
る。Next, the present invention will be explained in more detail based on examples.
5i(OEt)4208g、Zr(OCaH7)480
9、エタノール92gを撹拌混合した。ついで、0.0
2N MCI 18gを徐々に滴下して反応し、加水
分解を行った。次にこれに5iOz粉末(400mes
h) 609、Fetus粉末(400mesh) 1
09、MgO粉末(400mesh) 59を添加し、
撹拌2時間、超音波振動を2時間印加し、ゾル溶液を得
た。5i (OEt) 4208g, Zr (OCaH7) 480
9. 92 g of ethanol was stirred and mixed. Then, 0.0
18 g of 2N MCI was gradually added dropwise to react and hydrolyze. Next, add 5iOz powder (400mes
h) 609, Fetus powder (400mesh) 1
09, MgO powder (400mesh) 59 was added,
A sol solution was obtained by stirring for 2 hours and applying ultrasonic vibration for 2 hours.
これを充分に洗浄した石英ガラス管(内径8た肩φ、外
径ioamφ、長さ30cm)の外表面に塗布し、70
℃に保った乾燥器内に入れたところ5分でゲル化した。Apply this to the outer surface of a thoroughly cleaned quartz glass tube (inner diameter 8mm diameter, outer diameter ioamφ, length 30cm).
When placed in a dryer kept at ℃, it gelatinized in 5 minutes.
1時間静置した後取り出し、再びその表面に上記ゾル溶
液を塗布して、再び乾燥器(70℃)内に2時間静置し
た。After being allowed to stand for 1 hour, it was taken out, the above sol solution was again applied to its surface, and it was allowed to stand still in the dryer (70°C) for 2 hours again.
つぎに、上記石英ガラス管を電気炉により800℃にて
10時間加熱処理した。ついで、ガラス管の中空部に発
熱用ニクロム線を入れ、MgOを充填した。該ニクロム
線に通電し、表面温度が500°Cの状態で放射率の測
定を行った。結果を第1図に示す。Next, the quartz glass tube was heat-treated at 800° C. for 10 hours in an electric furnace. Then, a heat-generating nichrome wire was inserted into the hollow part of the glass tube, and MgO was filled therein. The nichrome wire was energized and its emissivity was measured at a surface temperature of 500°C. The results are shown in Figure 1.
また、基材としてAl2O3板を用い、この上に前記ゾ
ル溶液を塗布し、ゲル化、乾燥、加熱処理を行った。こ
れを裏面よりガスバーナーで加熱すると、同様な遠赤外
線放射体となり、前記ゾル溶液を家庭用のナベ底に塗布
することができる。Further, an Al2O3 plate was used as a base material, and the sol solution was applied thereon, followed by gelation, drying, and heat treatment. When this is heated from the back side with a gas burner, it becomes a similar far-infrared radiator, and the sol solution can be applied to the bottom of a household pan.
灸帆Δ処果
本発明の方法によれば、金属アルコキシドを原料とし、
比較的低温の加熱処理で強固な膜ができるため、遠赤外
放射体への加工が安価かつ容易に行うことができる。ま
た、基材の選定自由度も高い。According to the method of the present invention, a metal alkoxide is used as a raw material,
Since a strong film can be formed by heat treatment at a relatively low temperature, processing into a far-infrared radiator can be performed easily and inexpensively. Furthermore, there is a high degree of freedom in selecting the base material.
第1図は、実施例にて得られた遠赤外放射体の放射率を
示すグラフである。
第1図
級長 (,11すFIG. 1 is a graph showing the emissivity of far-infrared emitters obtained in Examples. Figure 1 Class leader (, 11th
Claims (2)
解してなるゾル溶液を基材表面に塗布し、ゲル化させ加
熱処理を行うことを特徴とする遠赤外線放射体の製造方
法。(1) A method for producing a far-infrared radiator, which comprises applying a sol solution obtained by hydrolyzing at least one metal alkoxide onto the surface of a base material, gelling it, and performing a heat treatment.
載の製造方法。(2) The manufacturing method according to item 1 above, wherein the sol solution contains metal oxide powder.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33594087A JPH01176693A (en) | 1987-12-29 | 1987-12-29 | Manufacture of far infrared radiator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33594087A JPH01176693A (en) | 1987-12-29 | 1987-12-29 | Manufacture of far infrared radiator |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01176693A true JPH01176693A (en) | 1989-07-13 |
Family
ID=18294045
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33594087A Pending JPH01176693A (en) | 1987-12-29 | 1987-12-29 | Manufacture of far infrared radiator |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01176693A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03127482A (en) * | 1989-10-09 | 1991-05-30 | Matsushita Electric Ind Co Ltd | Extreme infrared radiation heater and manufacture thereof |
JP2008037697A (en) * | 2006-08-04 | 2008-02-21 | Yoshiki Yamashita | Far-infrared radiation composite material and its manufacturing method |
JP2009107875A (en) * | 2007-10-29 | 2009-05-21 | Yoshiki Yamashita | Far-infrared radiation composite material and its manufacturing method |
JP2011127809A (en) * | 2009-12-16 | 2011-06-30 | Rinnai Corp | Far-infrared ray radiation ceramic burner plate |
CN103716925A (en) * | 2014-01-02 | 2014-04-09 | 韩玖町 | Pollution-free manufacturing method for surface electric heating elements |
-
1987
- 1987-12-29 JP JP33594087A patent/JPH01176693A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03127482A (en) * | 1989-10-09 | 1991-05-30 | Matsushita Electric Ind Co Ltd | Extreme infrared radiation heater and manufacture thereof |
JP2008037697A (en) * | 2006-08-04 | 2008-02-21 | Yoshiki Yamashita | Far-infrared radiation composite material and its manufacturing method |
JP2009107875A (en) * | 2007-10-29 | 2009-05-21 | Yoshiki Yamashita | Far-infrared radiation composite material and its manufacturing method |
JP2011127809A (en) * | 2009-12-16 | 2011-06-30 | Rinnai Corp | Far-infrared ray radiation ceramic burner plate |
CN103716925A (en) * | 2014-01-02 | 2014-04-09 | 韩玖町 | Pollution-free manufacturing method for surface electric heating elements |
CN103716925B (en) * | 2014-01-02 | 2016-01-20 | 韩玖町 | The pollution-free manufacture method of a kind of electric heating element |
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