JPH01175237A - Formation of oxynitride film - Google Patents
Formation of oxynitride filmInfo
- Publication number
- JPH01175237A JPH01175237A JP33542287A JP33542287A JPH01175237A JP H01175237 A JPH01175237 A JP H01175237A JP 33542287 A JP33542287 A JP 33542287A JP 33542287 A JP33542287 A JP 33542287A JP H01175237 A JPH01175237 A JP H01175237A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxynitride film
- silicon
- polysilicon film
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 claims abstract description 33
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000012495 reaction gas Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 19
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 10
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 238000000137 annealing Methods 0.000 abstract description 7
- 239000001272 nitrous oxide Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
半導体装置の絶縁膜、特にオキシナイトライド膜の形成
方法の改良に関し、
反応ガスをシリコン或いはポリシリコン膜と反応させて
その表面に直接緻密なオキシナイトライド膜を形成する
ことが可能なオキシナイトライド膜の形成方法の提供を
目的とし、
ヒドラジンと酸素を含有するガスを反応ガスとして用い
、前記反応ガスとシリコン或いはポリシリコン膜とを直
接反応させてオキシナイトライド膜を形成するよう構成
する。[Detailed Description of the Invention] [Summary] Regarding the improvement of a method for forming an insulating film of a semiconductor device, especially an oxynitride film, a reaction gas is reacted with a silicon or polysilicon film to form a dense oxynitride directly on the surface of the film. The purpose is to provide a method for forming an oxynitride film that can form a film, using a gas containing hydrazine and oxygen as a reaction gas, and directly reacting the reaction gas with a silicon or polysilicon film to form an oxynitride film. The structure is configured to form a nitride film.
本発明は、半導体装置の絶縁膜の形成に係り、特にオキ
シナイトライド膜の形成方法の改良に関するものである
。The present invention relates to the formation of an insulating film for a semiconductor device, and particularly relates to an improvement in a method for forming an oxynitride film.
ダイナミック・ランダム・アクセス・メモリ（Ｄ′ＲＡ
Ｍ）のキャパシタ膜やチャージ蓄積膜にはオキシナイト
ライド膜が用いられている。Dynamic Random Access Memory (D'RA)
An oxynitride film is used for the capacitor film and charge storage film in M).
このようなオキシナイトライド膜の形成は、シラン（Ｓ
ｉＨ４）とアンモニア（ＮＨ３）或いは窒素（Ｎ２）と
亜酸化窒素（Ｎ、Ｏ）を反応ガスとして用い、プラズマ
ＣＶＤ法によって行われてきた。The formation of such an oxynitride film is caused by silane (S
The plasma CVD method has been performed using iH4) and ammonia (NH3) or nitrogen (N2) and nitrous oxide (N, O) as reaction gases.
しかし、この方法は気相反応を利用するため、シリコン
基板或いはポリシリコン膜との結合力が弱く、ピンホー
ルが生じ易かった。However, since this method utilizes a gas phase reaction, the bonding force with the silicon substrate or polysilicon film is weak and pinholes are likely to occur.
以上のような状況からシリコン或いはポリシリコン膜の
表面へより緻密なオキシナイトライド膜を形成すること
が可能なオキシナイトライド膜め形成方法が要望されて
いる。Under the above circumstances, there is a need for a method for forming an oxynitride film that can form a denser oxynitride film on the surface of a silicon or polysilicon film.
第３図はＤＲＡＭセルの側断面図である。 FIG. 3 is a side sectional view of the DRAM cell.
従来のオキシナイトライド膜の形成方法は第３図に示す
ように、シリコン基板３１の表面に設けたシリコン酸化
膜及びシリコン窒化膜をパターニングしてフィールド酸
化膜３２を形成し、このパターニングされた窓内にゲー
ト酸化膜３３とワード線３４となるポリシリコン膜を形
成し、このワード線３４を覆う層間絶縁膜３７を形成す
る。As shown in FIG. 3, the conventional method for forming an oxynitride film is to pattern a silicon oxide film and a silicon nitride film provided on the surface of a silicon substrate 31 to form a field oxide film 32, and to form a field oxide film 32 through this patterned window. A gate oxide film 33 and a polysilicon film which will become a word line 34 are formed therein, and an interlayer insulating film 37 covering this word line 34 is formed.
次に、図示のポリシリコン膜Ａ３８となるポリシリコン
膜を全面に形成し、パターニングしてポリシリコン膜Ａ
３Ｂを形成する。Next, a polysilicon film that will become the illustrated polysilicon film A38 is formed on the entire surface and patterned to form the polysilicon film A38.
Form 3B.
次いで、同様に図示のボ゛リシリコン膜Ａ３８の全面に
オキシナイトライド膜を形成し、パターニングしてオキ
シナイトライド膜３９を形成する。Next, an oxynitride film is similarly formed on the entire surface of the illustrated polysilicon film A38, and patterned to form an oxynitride film 39.
このオキシナイトライド膜の形成は第４図に示すような
プラズマＣＶＤ装置を用い、下記の条件で行っている。This oxynitride film was formed using a plasma CVD apparatus as shown in FIG. 4 under the following conditions.
反応ガス
・・−・・・・・・・・・シラン（Ｓｉ Ｈ４）とアン
モニア（Ｎ Ｈ３）或いは窒素（Ｎ２）と亜酸化窒素（
ＮｇＯ）反応ガス流量
シラン（Ｓｔ Ｈ４） −−−−−−−−−−−−−−
−−１０ｃｃ／ ｌｌｌ１ｎアンモニア（Ｎ Ｈ３）
−−−−−−−−−−−−４００ｃｃ／ ｍｉｎ窒素（
Ｎｚ） ・−−−−−−−−−−−−−−−−−−−−
−−−−−−−１００ｃｃ／ｍｉｎ亜酸化窒素（Ｎ ｚ
Ｏ） −−−−−−２０ｃｃ／ ｍｉｎ反応室内圧・
−−−一・−・−・−・・・・・−・−・・−・−−−
−−−−−−−−−−−−−−−Ｉ Ｔｏｒｒ基板加熱
温度−・−・−・−・−・・・・−・・−−−−−−−
一−−−−−−−・−・−・４００℃高周波電源周波数
−・・−・・１３．５６ｋＨｚ或いは５０ｋｌ（ｚ高周
波電源出力・−−−ｍ−−・−一一一−−−−−−−−
−−−・−・−・−−−−−−−−−４０Ｗ先ず第４図
に示すようなプラズマＣＶＤ装置の減圧した反応室５１
内のヒータ５２を内蔵した下部電極５３の上にシリコン
基板３１を載置し、高周波発振器５４により上部電極５
５と下部電極５３の間に高周波電圧を印加し、反応ガス
をガス導入口５６から導入する。Reactive gas: Silane (Si H4) and ammonia (NH3) or nitrogen (N2) and nitrous oxide (
NgO) Reaction gas flow rate Silane (St H4)
--10cc/llll1n ammonia (NH3)
-------------400cc/min Nitrogen (
Nz) ・−−−−−−−−−−−−−−−−−−−
---------100cc/min nitrous oxide (Nz
O) --------20cc/min reaction chamber pressure・
−−−１・−・−・−・・・・・−・−・・−・−−−
−−−−−−−−−−−−−−−I Torr substrate heating temperature−・−・−・−・−・・−・・−−−−−−−
1----------・--・-400℃ high-frequency power supply frequency--13.56kHz or 50kl (z high-frequency power supply output---m-----111---- ------
------------
The silicon substrate 31 is placed on the lower electrode 53 which has a built-in heater 52, and the upper electrode 5 is heated by a high frequency oscillator 54.
A high frequency voltage is applied between 5 and the lower electrode 53, and a reaction gas is introduced from the gas introduction port 56.
その後、同様に図示のポリシリコン膜Ｂ４０となるポリ
シリコン膜を全面に形成し、パターコン）゛してポリシ
リコン膜Ｂ４０を形成し、次にＰＳＧ膜４１となるＰＳ
Ｇ膜を全面に形成し、パターニングしてＰＳＧ膜４１を
形成し、最後にＰＳＧ膜４１の表面にビット線４２を形
成してキャパシタを有する多層配線層の製造が完了する
。After that, a polysilicon film that will become the polysilicon film B40 shown in the figure is similarly formed on the entire surface, and a polysilicon film B40 is formed by patterning, and then a PS film that becomes the PSG film 41 is formed.
A G film is formed on the entire surface and patterned to form a PSG film 41, and finally a bit line 42 is formed on the surface of the PSG film 41, completing the production of a multilayer wiring layer having a capacitor.
〔発明が解決しようとする問題点３
以上説明の従来のオキシナイトライド膜の形成方法で問
題となるのは、プラズマＣＶＤ法で膜を形成することで
ある。[Problem 3 to be Solved by the Invention A problem with the conventional method of forming an oxynitride film described above is that the film is formed by plasma CVD.
即ち、シリコン或いはポリシリコン膜の表面にプラズマ
ＣＶＤ法でオキシナイトライド膜を堆積するので、シリ
コン基板或いはポリシリコン膜との結合力が弱（、ピン
ホールが生じ易かった。That is, since the oxynitride film is deposited on the surface of a silicon or polysilicon film by plasma CVD, the bonding force with the silicon substrate or polysilicon film is weak (and pinholes are likely to occur).
本発明は以上のような状況から、反応ガスをシリコン或
いはポリシリコン膜と反応させて、その表面に直接緻密
なオキシナイトライド膜を形成することが可能なオキシ
ナイトライド膜の形成方法の提供を目的としたものであ
る。In view of the above-mentioned circumstances, the present invention aims to provide a method for forming an oxynitride film that can form a dense oxynitride film directly on the surface of a silicon or polysilicon film by reacting a reactive gas with the silicon or polysilicon film. This is the purpose.
上記問題点は、ヒドラジンと酸素或いはヒドラジンと亜
酸化窒素を反応ガスとして用い、この反応ガスとシリコ
ン或いはポリシリコン膜とを直接反応させてオキシナイ
トライド膜を形成する本発明によるオキシナイトライド
膜の形成方法によって解決される。The above problem can be solved by using the oxynitride film according to the present invention, which uses hydrazine and oxygen or hydrazine and nitrous oxide as a reaction gas, and directly reacts this reaction gas with silicon or polysilicon film to form an oxynitride film. The problem is solved by the formation method.
即ち本発明においては、ヒドラジンと酸素を含有するガ
スを反応ガスとして用い、反応ガスとシリコン或いはポ
リシリコン膜とを直接反応させて下記の反応式に示すよ
うに、オキシナイトライド膜を形成するので、プラズマ
ＣＶＤ法により堆積させたオキシナイトライド膜でない
、シリコン或いはポリシリコン膜に直接反応させたオキ
シナイトライド膜の形成が可能となる。That is, in the present invention, a gas containing hydrazine and oxygen is used as a reaction gas, and the reaction gas and silicon or polysilicon film are directly reacted to form an oxynitride film as shown in the reaction formula below. It becomes possible to form an oxynitride film that is not an oxynitride film deposited by plasma CVD, but is made by directly reacting with a silicon or polysilicon film.
ａｓｉＯ２＋ｂＮｚＨ４−Ｃ５ｉｘＯｙＮ＋＋ｄＨｚ〔
実施例〕
以下第１図〜第２図について本発明の一実施例を説明す
る。asiO2+bNzH4-C5ixOyN++dHz [
Embodiment] An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
第１図に示すように、シリコン基板１の表面に設けたシ
リコン酸化膜及びシリコン窒化膜をパターニングしてフ
ィールド酸化Ｍ２を形成し、このパターニングされた窓
内にゲート酸化膜３とワード線４となるポリシリコン膜
を形成し、このワード線４を覆うＣＶＤシリコン酸化膜
よりなる眉間絶縁膜７を形成する。As shown in FIG. 1, a field oxide M2 is formed by patterning a silicon oxide film and a silicon nitride film provided on the surface of a silicon substrate 1, and a gate oxide film 3 and a word line 4 are formed within this patterned window. A polysilicon film is formed, and a glabellar insulating film 7 made of a CVD silicon oxide film is formed to cover this word line 4.
次に、図示のポリシリコン膜Ａ８となるポリシリコン膜
を全面に形成し、パターニングしてポリシリコン膜Ａ８
を形成する。Next, a polysilicon film that will become the illustrated polysilicon film A8 is formed on the entire surface and patterned to form the polysilicon film A8.
form.
次いで、このポリシリコン膜Ａ８の表面に直接にオキシ
ナイトライド膜９を形成する。Next, an oxynitride film 9 is formed directly on the surface of this polysilicon film A8.
このオキシナイトライド膜９の形成は、短時間で処理が
でき、下部の拡散層の形状を変化させないランプアニー
ル装置を用いて行う。This oxynitride film 9 is formed using a lamp annealing device that can process in a short time and does not change the shape of the underlying diffusion layer.
ランプアニール装置は第２図に示すように、ガス導入口
２１ａ及びガス排出口２１ｂを備えた石英からなる反応
室２１の上部及び下部にハロゲンランプ２２を配置し、
その間に支持ビン２３ａを有する載物台２３が設けられ
ている。As shown in FIG. 2, the lamp annealing apparatus includes halogen lamps 22 arranged at the upper and lower parts of a reaction chamber 21 made of quartz and equipped with a gas inlet 21a and a gas outlet 21b.
A stage 23 having a support bin 23a is provided therebetween.
先ず、このランプアニール装置内にシリコン基板ｌを挿
入し、載物台２３の支持ビン２３ａの上に載せ、反応ガ
スとして熱分解し易いヒドラジンを使用し、下記の条件
で熱処理を行う。First, a silicon substrate 1 is inserted into this lamp annealing apparatus, placed on the support bin 23a of the stage 23, and heat-treated under the following conditions using hydrazine, which is easily thermally decomposed, as a reaction gas.
ヒドラジンの流量−’・−−−−−−−−−−−−−−
−−５００ｃｃ／ｍｉｎ酸素の流量−−−−−’−’−
−−−−−・−−−−−−−−５００ｃｃ／ｍｉｎ反応
室内圧−・−・・・−・−・・−・−・−・・・〜・−
・・−・−・・−７６０Ｔｏｒｒ処理温度・・・−・−
・−・・−・−・−・−・・−・−・・・・−・・−・
−・−・−ｉ 、 ０００℃処理時間・・−・−・・・
・・・・・・・・・−−−一−−−−−−−−−−−−
−−・−一−−−−・・−１００秒反応ガスの組み合わ
せとしてしは下記の２通りが考えられる。Flow rate of hydrazine −'・−−−−−−−−−−−−−−
--500cc/min oxygen flow rate---'-'-
−−−−−・−−−−−−−500cc/min reaction chamber pressure−・−・−・−・・−・−・−・～・−
・・−・−・・−760Torr processing temperature・・・−・−
・−・・−・−・−・−・・−・−・・・−・・−・
−・−・−i, 000℃ processing time・・−・−・・
・・・・・・・・・−−−1−−−−−−−−−−−−
--.--1-----...-100 seconds The following two combinations of reaction gases can be considered.
■ヒドラジン（ＮｚＨ４）と酸素（０２）■ヒドラジン
（Ｎ ｚ Ｈ４）と亜酸化窒素（Ｎ、Ｏ）その後図示の
ポリシリコン膜ＢＩＯとなるポリシリコン膜を全面に形
成し、パターニングしてポリシリコン膜ＢＩＯを形成す
る。■Hydrazine (NzH4) and oxygen (02) ■Hydrazine (NzH4) and nitrous oxide (N, O) After that, a polysilicon film that will become the polysilicon film BIO shown in the figure is formed on the entire surface and patterned to form a polysilicon film. Form BIO.
次に、ＰＳＧ膜１１となるＰＳＧ膜を全面に形成し、パ
ターニングしてＰＳＧ膜１１を形成し、最楡にＰＳＧ膜
１１の表面にビット線１２を形成してキャパシタを有す
る多層配線層の製造が完了する。Next, a PSG film that will become the PSG film 11 is formed on the entire surface, patterned to form the PSG film 11, and finally, a bit line 12 is formed on the surface of the PSG film 11 to manufacture a multilayer wiring layer having a capacitor. is completed.
このように、ヒドラジン（ＮｚＨ４）を用いるランプア
ニール装置での処理で、キャパシタの誘電体膜としての
オキシナイトライド膜９をポリシリコン膜Ａ８に直接形
成するので、プラズマＣＶＤ法で堆積したオキシナイト
ライド膜と比べると、ピンホールの少ない緻密ななオキ
シナイトライド膜の形成が可能となり、半導体素子の絶
縁性の向上が可能となる。In this way, since the oxynitride film 9 as the dielectric film of the capacitor is directly formed on the polysilicon film A8 by treatment with a lamp annealing device using hydrazine (NzH4), the oxynitride film 9 deposited by the plasma CVD method is Compared to a film, it is possible to form a dense oxynitride film with fewer pinholes, making it possible to improve the insulation properties of semiconductor devices.
以上の説明から明らかなように本発明によれば極めて簡
単な反応ガスの変更と処理方法の変更により、シリコン
或いはポリシリコン膜に直接緻密なオキシナイトライド
膜の形成を行うことが可能となり、絶縁性の優れた半導
体装置の製造が可能となる等の利点があり、著しい経済
的及び、信頼性向上の効果が期待でき工業的には極めて
有用なものである。As is clear from the above explanation, according to the present invention, by extremely simple changes in the reaction gas and processing method, it is possible to form a dense oxynitride film directly on a silicon or polysilicon film, thereby making it possible to form an insulating film. It has advantages such as being able to manufacture semiconductor devices with excellent properties, and can be expected to have significant economical and reliability-improving effects, making it extremely useful industrially.
第１図は本発明による一実施例を示す側断面図、第２図
は本発明による一実施例に用いるランプアニール装置の
概略図、
第３図は従来のオキシナイトライド膜の形成方法を示す
側断面図、
第４図は従来のオキシナイトライド膜の形成に用いるプ
ラズマＣＶＤ装置の概略図、
である。
図において、
１はシリコン基板、
２はフィールド酸化膜、
３はゲート酸化膜、
４はワード線、
５はソース、
６はドレイン、
７は層間絶縁膜、
８はポリシリコン膜Ａ１
９はオキシナイトライド膜、
１０はポリシリコン膜Ｂ１
１１はＰＳＧ膜
１２はビット線、
２１は反応室、
２２はハロゲンランプ、
２３は載物台
２３ａは支持ピン、
本発明による一実施例を示す側断面図
第 １ 図
本発明による一実施例に用いるランプアニール装置の概
略図第 ２ 図FIG. 1 is a side sectional view showing an embodiment according to the present invention, FIG. 2 is a schematic diagram of a lamp annealing apparatus used in an embodiment according to the present invention, and FIG. 3 shows a conventional method for forming an oxynitride film. FIG. 4 is a schematic diagram of a plasma CVD apparatus used for forming a conventional oxynitride film. In the figure, 1 is a silicon substrate, 2 is a field oxide film, 3 is a gate oxide film, 4 is a word line, 5 is a source, 6 is a drain, 7 is an interlayer insulating film, 8 is a polysilicon film A1, 9 is an oxynitride 10 is a polysilicon film B1, 11 is a PSG film 12 is a bit line, 21 is a reaction chamber, 22 is a halogen lamp, 23 is a stage 23a is a support pin, 1st side sectional view showing one embodiment of the present invention. Figure 2 A schematic diagram of a lamp annealing apparatus used in an embodiment of the present invention.
Claims (1)
い、前記反応ガスとシリコン或いはポリシリコン膜とを
直接反応させてオキシナイトライド膜を形成することを
特徴とするオキシナイトライド膜の形成方法。A method for forming an oxynitride film, comprising using a gas containing hydrazine and oxygen as a reaction gas, and forming an oxynitride film by directly reacting the reaction gas with a silicon or polysilicon film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33542287A JPH01175237A (en) | 1987-12-28 | 1987-12-28 | Formation of oxynitride film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33542287A JPH01175237A (en) | 1987-12-28 | 1987-12-28 | Formation of oxynitride film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01175237A true JPH01175237A (en) | 1989-07-11 |
Family
ID=18288381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33542287A Pending JPH01175237A (en) | 1987-12-28 | 1987-12-28 | Formation of oxynitride film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01175237A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559729A (en) * | 1978-10-27 | 1980-05-06 | Fujitsu Ltd | Forming method of semiconductor surface insulating film |
| JPS6187342A (en) * | 1984-10-05 | 1986-05-02 | Nec Corp | Nitriding method of si by multiple-beam projection |
-
1987
- 1987-12-28 JP JP33542287A patent/JPH01175237A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5559729A (en) * | 1978-10-27 | 1980-05-06 | Fujitsu Ltd | Forming method of semiconductor surface insulating film |
| JPS6187342A (en) * | 1984-10-05 | 1986-05-02 | Nec Corp | Nitriding method of si by multiple-beam projection |
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