JPH0117270B2 - - Google Patents

Info

Publication number
JPH0117270B2
JPH0117270B2 JP55011473A JP1147380A JPH0117270B2 JP H0117270 B2 JPH0117270 B2 JP H0117270B2 JP 55011473 A JP55011473 A JP 55011473A JP 1147380 A JP1147380 A JP 1147380A JP H0117270 B2 JPH0117270 B2 JP H0117270B2
Authority
JP
Japan
Prior art keywords
type diffusion
diffusion region
insulating layer
region
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55011473A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56110255A (en
Inventor
Jun Ueda
Haruo Mori
Kazuo Hagimura
Hiroichi Tsukada
Kotaro Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Original Assignee
Nippon Telegraph and Telephone Corp
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Oki Electric Industry Co Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1147380A priority Critical patent/JPS56110255A/ja
Priority to US06/228,935 priority patent/US4489340A/en
Priority to DE3102851A priority patent/DE3102851C2/de
Publication of JPS56110255A publication Critical patent/JPS56110255A/ja
Publication of JPH0117270B2 publication Critical patent/JPH0117270B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/118—Electrodes comprising insulating layers having particular dielectric or electrostatic properties, e.g. having static charges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/251—Lateral thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/133—Thyristors having built-in components the built-in components being capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs

Landscapes

  • Thyristors (AREA)
JP1147380A 1980-02-04 1980-02-04 Pnpn semiconductor switch Granted JPS56110255A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP1147380A JPS56110255A (en) 1980-02-04 1980-02-04 Pnpn semiconductor switch
US06/228,935 US4489340A (en) 1980-02-04 1981-01-28 PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
DE3102851A DE3102851C2 (de) 1980-02-04 1981-01-29 PNPN-Halbleiterschalter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1147380A JPS56110255A (en) 1980-02-04 1980-02-04 Pnpn semiconductor switch

Publications (2)

Publication Number Publication Date
JPS56110255A JPS56110255A (en) 1981-09-01
JPH0117270B2 true JPH0117270B2 (enrdf_load_stackoverflow) 1989-03-29

Family

ID=11779034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1147380A Granted JPS56110255A (en) 1980-02-04 1980-02-04 Pnpn semiconductor switch

Country Status (1)

Country Link
JP (1) JPS56110255A (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4457956A (en) * 1980-08-11 1984-07-03 Union Carbide Corporation Method for autodeposition onto a non-metallic surface

Also Published As

Publication number Publication date
JPS56110255A (en) 1981-09-01

Similar Documents

Publication Publication Date Title
US4755697A (en) Bidirectional output semiconductor field effect transistor
KR100276773B1 (ko) 쌍방향사이리스터소자
US4742380A (en) Switch utilizing solid-state relay
US4721986A (en) Bidirectional output semiconductor field effect transistor and method for its maufacture
US5932916A (en) Electrostatic discharge protection circuit
JPH02297614A (ja) 半導体ａｃスイツチ
US20020060340A1 (en) Semiconductor component
KR20010015835A (ko) 반도체 장치
US5479030A (en) Compound semiconductor device and electric power converting apparatus using such device
JP4971848B2 (ja) 低スイッチング損失、低ノイズを両立するパワーｍｏｓ回路
US6218888B1 (en) Insulated gate bipolar transistor device with a current limiting circuit
JPS6349908B2 (enrdf_load_stackoverflow)
US4489340A (en) PNPN Light sensitive semiconductor switch with phototransistor connected across inner base regions
US5227655A (en) Field effect transistor capable of easily adjusting switching speed thereof
JPH0117268B2 (enrdf_load_stackoverflow)
KR850005737A (ko) 광기전련 릴레이
JPS5943096B2 (ja) 電力回路用スイツチ回路及びｍｏｓ集積スイツチ回路の製法
US4520277A (en) High gain thyristor switching circuit
WO2000019540A1 (en) Bi-directional semiconductor switch, and switch circuit for battery-powered equipment
US4509069A (en) Light triggerable thyristor with controllable emitter-short circuit and trigger amplification
JPH0126190B2 (enrdf_load_stackoverflow)
JPH0117270B2 (enrdf_load_stackoverflow)
US4761679A (en) Complementary silicon-on-insulator lateral insulated gate rectifiers
EP0099926B1 (en) Field-effect controlled bi-directional lateral thyristor
JP2633585B2 (ja) 半導体装置