JPH0117244B2 - - Google Patents
Info
- Publication number
- JPH0117244B2 JPH0117244B2 JP59045565A JP4556584A JPH0117244B2 JP H0117244 B2 JPH0117244 B2 JP H0117244B2 JP 59045565 A JP59045565 A JP 59045565A JP 4556584 A JP4556584 A JP 4556584A JP H0117244 B2 JPH0117244 B2 JP H0117244B2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- cover
- quartz
- holding device
- upper plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 32
- 239000010453 quartz Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 9
- 230000003014 reinforcing effect Effects 0.000 claims description 7
- 230000000284 resting effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000012779 reinforcing material Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000003670 easy-to-clean Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
- H01L21/67306—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterized by a material, a roughness, a coating or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Description
【発明の詳細な説明】
この発明は縦形拡散炉に用いるためのウエハー
保持装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a wafer holding device for use in a vertical diffusion furnace.
近年、ウエハーの大口径化が進み、またウエハ
ーの製造工程の自動化が促進されているが、その
ようなウエハーの大口径化と自動化等を考えて、
縦形拡散炉が提案されるようになつた。従来の横
形拡散炉に比較して、縦形拡散炉は構造が簡単で
あり、炉の断面均熱特性が勝れており、ウエハー
の口径が大きくなつても制御がし易く、更にはウ
エハーの自重によるボート支持点部分の結晶欠陥
の発生が少なくなるなどという長所がある。 In recent years, the diameter of wafers has become larger and the automation of wafer manufacturing processes has been promoted.
Vertical diffusion furnaces have been proposed. Compared to conventional horizontal diffusion furnaces, vertical diffusion furnaces have a simpler structure, superior cross-sectional heat uniformity, and are easier to control even when the diameter of the wafer becomes large. This has the advantage of reducing the occurrence of crystal defects at the boat support point.
この発明はこのような実情に鑑みてなされたも
のであり、縦形拡散炉の長所を最大限に活かすこ
とのできるウエハー保持装置を提供することを目
的としている。 The present invention has been made in view of these circumstances, and it is an object of the present invention to provide a wafer holding device that can take full advantage of the advantages of a vertical diffusion furnace.
この目的を達成するための本発明の要旨とする
ところは、縦形拡散灯に用いるためのウエハー保
持装置において、上方プレートと下方プレートの
間に３本の保持部材を設けて載置式に構成し、各
保持部材を補強材とその補強材の周囲に設けられ
た石英製のカバーによつて構成し、その石英製の
カバーにウエハー用の係止溝を所定間隔毎に形成
し、上方プレートを全体的に石英のみで形成した
ことを特徴とするウエハー保持装置にある。 The gist of the present invention to achieve this object is to provide a wafer holding device for use in a vertical diffuser lamp, in which three holding members are provided between an upper plate and a lower plate and configured to be mounted. Each holding member is composed of a reinforcing material and a quartz cover provided around the reinforcing material, and locking grooves for wafers are formed at predetermined intervals on the quartz cover, and the upper plate is completely fixed. The wafer holding device is characterized in that it is made of quartz only.
この発明は以上のような構成になつているの
で、多数のウエハーを保持しても十分に強度が得
られるとともに、炉心管内の清浄化が極めて容易
であるという大きな効果がある。上方プレートと
下方プレートの間に３本の保持部材を設け、それ
らの保持部材を構成する石英製のカバーに係止溝
を形成して、それらの係止溝にウエハーを係止し
て保持したうえ、ウエハーを炉心管内に上下方向
に出し入れするので、塵芥が発生せず、ウエハー
の自重による支持点部分の結晶欠陥も発生しな
い。このような効果は特にウエハーの大口径化を
計つた時に顕著となる。また、ウエハー保持スペ
ースを小さく出来るという効果もある。 Since the present invention has the above-described structure, it has the great effect that sufficient strength can be obtained even when holding a large number of wafers, and the inside of the reactor tube is extremely easy to clean. Three holding members were provided between the upper plate and the lower plate, locking grooves were formed in the quartz covers constituting these holding members, and the wafer was locked and held in these locking grooves. Moreover, since the wafer is taken in and out of the reactor tube in the vertical direction, no dust is generated, and no crystal defects are generated at the supporting points due to the wafer's own weight. This effect becomes particularly noticeable when increasing the diameter of the wafer. Another advantage is that the wafer holding space can be reduced.
以下、図面を参照して、この発明の好適な実施
例を説明する。 Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
上方プレート１と下方プレート２の間に３本の
保持部材３が垂直に設けられている。図面に示し
た実施例においては、上方プレート１と下方プレ
ート２は円形に形成されており、各保持部材３は
全長が約１〜1.2ｍで、全体がほぼ円柱状となつ
ている。 Three holding members 3 are vertically provided between the upper plate 1 and the lower plate 2. In the embodiment shown in the drawings, the upper plate 1 and the lower plate 2 are circularly formed, and each retaining member 3 has a total length of about 1 to 1.2 m and is generally cylindrical as a whole.
各保持部材３は丸棒形状をした補強材４とその
補強材４の周囲に設けられた円管形状の石英製の
カバー５で構成されている。補強材４の材質は
SiCが好ましいが、Si、SiC―Si、Ｃ、SiO2、
Al2O3なども使用できる。また、カバー５は補強
材４の周囲に図示例では離して設けてあるが、場
合によつては補強材４とカバー５とを接触させて
もよい。 Each holding member 3 is composed of a round bar-shaped reinforcing member 4 and a circular tube-shaped quartz cover 5 provided around the reinforcing member 4. The material of reinforcement material 4 is
SiC is preferred, but Si, SiC-Si, C, SiO 2 ,
Al 2 O 3 etc. can also be used. Further, although the cover 5 is provided around the reinforcing member 4 at a distance in the illustrated example, the reinforcing member 4 and the cover 5 may be brought into contact with each other depending on the case.
石英製のカバー５にはウエハー用の係止溝６が
所定間隔毎に形成してある。図示例では、各カバ
ー５の内側部分のみに150本以上のウエハー用の
係止溝６が形成してあり、所定間隔毎に150枚以
上のウエハー７をそれぞれ３点で係止して水平状
態又は傾斜状態に保持できるようになつている。
第３図はウエハー７を水平状態に保持した例を示
し、第４図はウエハー７を10゜の傾斜状態に保持
した例を示している。 The quartz cover 5 has locking grooves 6 for wafers formed at predetermined intervals. In the illustrated example, locking grooves 6 for 150 or more wafers are formed only in the inner part of each cover 5, and 150 or more wafers 7 are locked at three points at predetermined intervals and held in a horizontal state. Or it can be held in a tilted position.
FIG. 3 shows an example in which the wafer 7 is held horizontally, and FIG. 4 shows an example in which the wafer 7 is held at an angle of 10 degrees.
図示例では、カバー５は上端閉成で下端開放の
円管形状になつており、側部の厚みは係止溝６を
形成するに足るだけの厚みとなつている。係止溝
６はカバー５にのみ形成し、係止溝６がカバー５
の内側まで貫通しないようにするのが望ましい。 In the illustrated example, the cover 5 has a circular tube shape with the upper end closed and the lower end open, and the thickness of the side portion is sufficient to form the locking groove 6. The locking groove 6 is formed only on the cover 5, and the locking groove 6 is formed only on the cover 5.
It is desirable not to penetrate to the inside of the
上方プレート１は全体が石英のみで形成されて
いる。カバー５と上方プレート１とは溶接により
固定されている。 The upper plate 1 is entirely made of quartz. The cover 5 and the upper plate 1 are fixed by welding.
下方プレート２はSiC製のベース８とそのベー
ス８の周囲に設けられた石英製のカバー９で構成
されている。ベース８は円盤状であり、その全体
を包むように石英製のカバー９が設けられてい
る。 The lower plate 2 is composed of a base 8 made of SiC and a cover 9 made of quartz provided around the base 8. The base 8 is disc-shaped, and a cover 9 made of quartz is provided to cover the entire base.
各保持部材３を構成する補強材４の下端は下方
プレート２のベース８に一体的に固定されてい
る。また、各保持部材３を構成するカバー５の下
端は下方プレート２の石英製のカバー９と溶接に
より固定されている。 The lower end of the reinforcing member 4 constituting each holding member 3 is integrally fixed to the base 8 of the lower plate 2. Further, the lower end of the cover 5 constituting each holding member 3 is fixed to the quartz cover 9 of the lower plate 2 by welding.
前述の実施例においては、ウエハー保持装置の
いずれの部分においてもSiCの部分が直接外部に
出ているところはない。 In the embodiments described above, no part of the SiC is directly exposed to the outside in any part of the wafer holding device.
なお、前述のウエハー保持装置を使用するに際
しては、すべての係止溝６にそれぞれウエハー７
を水平状態又は傾斜状態を保つように係止して保
持し、縦形拡散炉（図示せず）の上方開放部また
は下方開放部からウエハー保持装置全体を挿入し
て、炉心管内に設定するものである。 In addition, when using the above-mentioned wafer holding device, each of the wafers 7 is placed in each of the locking grooves 6.
The entire wafer holding device is inserted into the vertical diffusion furnace (not shown) through the upper or lower opening of the vertical diffusion furnace (not shown) and set in the furnace core tube. be.
第１図はこの発明による縦形拡散炉用のウエハ
ー保持装置を一部断面で示した説明図、第２図は
第１図のＸ―Ｘ線に沿つた概略断面図、第３図は
ウエハーを水平に保持する例を示す概略図、第４
図はウエハーを傾斜させて保持する例を示す概略
図である。
１……上方プレート、２……下方プレート、３
……保持部材、４……補強材、５……カバー、６
……ウエハー用の係止溝、７……ウエハー、８…
…ベース、９……カバー。
Fig. 1 is an explanatory diagram showing a partial cross section of a wafer holding device for a vertical diffusion furnace according to the present invention, Fig. 2 is a schematic sectional view taken along the line X--X of Fig. Schematic diagram showing an example of horizontal holding, No. 4
The figure is a schematic diagram showing an example in which a wafer is held at an angle. 1...Upper plate, 2...Lower plate, 3
...Holding member, 4...Reinforcement material, 5...Cover, 6
... Wafer locking groove, 7... Wafer, 8...
...Base, 9...Cover.
Claims (1)
において、上方プレートと下方プレートの間に３
本の保持部材を設けて載置式に構成し、各保持部
材を補強材とその補強材の周囲に設けられた石英
製のカバーによつて構成し、その石英製のカバー
にウエハー用の係止溝を所定間隔毎に形成し、上
方プレートを全体的に石英のみで形成したことを
特徴とするウエハー保持装置。 ２ 下方プレートがSiC製のベースとそのベース
の周囲に設けられた石英製のカバーで構成されて
いる特許請求の範囲第１項に記載のウエハー保持
装置。[Claims] 1. In a wafer holding device for use in a vertical diffusion furnace, 3 wafers are provided between an upper plate and a lower plate.
A book holding member is provided and configured in a resting type, and each holding member is comprised of a reinforcing member and a quartz cover provided around the reinforcing member, and a wafer lock is attached to the quartz cover. A wafer holding device characterized in that grooves are formed at predetermined intervals and the upper plate is entirely made of quartz. 2. The wafer holding device according to claim 1, wherein the lower plate includes a base made of SiC and a cover made of quartz provided around the base.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4556584A JPS60189930A (en) | 1984-03-12 | 1984-03-12 | Wafer holding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4556584A JPS60189930A (en) | 1984-03-12 | 1984-03-12 | Wafer holding device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60189930A JPS60189930A (en) | 1985-09-27 |
| JPH0117244B2 true JPH0117244B2 (en) | 1989-03-29 |
Family
ID=12722869
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4556584A Granted JPS60189930A (en) | 1984-03-12 | 1984-03-12 | Wafer holding device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60189930A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3634935A1 (en) * | 1986-10-14 | 1988-04-28 | Heraeus Schott Quarzschmelze | VERTICAL HORDE |
| JPH029426U (en) * | 1988-06-30 | 1990-01-22 | ||
| JPH0831427B2 (en) * | 1989-12-28 | 1996-03-27 | 東芝セラミックス株式会社 | Stacking boat |
| JP2606932Y2 (en) * | 1992-06-29 | 2001-02-19 | 株式会社福井信越石英 | Vertical wafer holding boat |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53148283A (en) * | 1977-05-30 | 1978-12-23 | Toshiba Ceramics Co | Silicon wafer jig |
| JPS543647U (en) * | 1977-06-11 | 1979-01-11 | ||
| JPS5812730A (en) * | 1981-07-15 | 1983-01-24 | Kurabo Ind Ltd | Manufacture of bent rigid foamed composite sheet |
| JPS5878423A (en) * | 1981-10-16 | 1983-05-12 | ヘルムト・ザイエル・ゲ−エムベ−ハ− | Method of heat treating semiconductor article and device therefor |
| JPS58108735A (en) * | 1981-12-23 | 1983-06-28 | Fujitsu Ltd | Basket for vertical type reaction tube |
| JPS5918434B2 (en) * | 1980-08-14 | 1984-04-27 | 新日本製鐵株式会社 | Pulverized coal vibration filling device in coke oven |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52145771U (en) * | 1976-04-27 | 1977-11-04 | ||
| JPS5918434U (en) * | 1982-07-27 | 1984-02-04 | 株式会社東芝 | Heating support stand for semiconductor substrates |
-
1984
- 1984-03-12 JP JP4556584A patent/JPS60189930A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53148283A (en) * | 1977-05-30 | 1978-12-23 | Toshiba Ceramics Co | Silicon wafer jig |
| JPS543647U (en) * | 1977-06-11 | 1979-01-11 | ||
| JPS5918434B2 (en) * | 1980-08-14 | 1984-04-27 | 新日本製鐵株式会社 | Pulverized coal vibration filling device in coke oven |
| JPS5812730A (en) * | 1981-07-15 | 1983-01-24 | Kurabo Ind Ltd | Manufacture of bent rigid foamed composite sheet |
| JPS5878423A (en) * | 1981-10-16 | 1983-05-12 | ヘルムト・ザイエル・ゲ−エムベ−ハ− | Method of heat treating semiconductor article and device therefor |
| JPS58108735A (en) * | 1981-12-23 | 1983-06-28 | Fujitsu Ltd | Basket for vertical type reaction tube |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60189930A (en) | 1985-09-27 |
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