JPH01168060A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPH01168060A
JPH01168060A JP62325228A JP32522887A JPH01168060A JP H01168060 A JPH01168060 A JP H01168060A JP 62325228 A JP62325228 A JP 62325228A JP 32522887 A JP32522887 A JP 32522887A JP H01168060 A JPH01168060 A JP H01168060A
Authority
JP
Japan
Prior art keywords
horizontal
transfer
electrode
phase
hccd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62325228A
Other languages
Japanese (ja)
Inventor
Yasumasa Hasegawa
恭正 長谷川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP62325228A priority Critical patent/JPH01168060A/en
Publication of JPH01168060A publication Critical patent/JPH01168060A/en
Pending legal-status Critical Current

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)

Abstract

PURPOSE:To shift and horizontally transfer by a normal periodic pulse waveform by so wiring the electrode pattern of a transfer electrode for 2-phase-driving a horizontal CCD as to displace phase by one phase through a shift gate between the horizontal CCDs. CONSTITUTION:A horizontal transfer electrode 17 for forming two horizontal CCDs (HCCDs) 13, 14 is provided with 2-layer polysilicons Poly1, Poly2 arranged horizontally with two as one set, and driving pulses phiA, phiB are so applied between the first HCCD 13 and the other second HCCD 14 disposed near at a photodetector 10 that the phases between the electrodes disposed oppositely become reverse. To this end, the 2-layer polysilicons Poly1, Poly2 are so obliquely wired at a position formed with a shift gate electrode 12 that the transfer electrodes of the first and second HCCDs 13 and 14 are displaced horizontally by one from one each other.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は電荷転送素子に関し、更に詳述すれば、多線読
み出しを容易にした電荷転送素子に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a charge transfer device, and more particularly, to a charge transfer device that facilitates multi-line readout.

〔従来技術〕[Prior art]

電荷転送素子として、受光部の出力端に互いに並置接続
された複数本の水平CCDを配置し、受光部で発生した
信号電荷を各水平CODに振り分けて読み出す所謂多線
読み出し可能な素子が提案されている。
As a charge transfer element, a so-called multi-line readout element has been proposed in which a plurality of horizontal CCDs are arranged in parallel and connected to each other at the output end of a light receiving part, and the signal charge generated in the light receiving part is distributed to each horizontal COD and read out. ing.

このような電荷転送素子は、例えば1本の走査線に対し
て受光部の垂直方向に隣接する2行の光電変換素子を割
当て、第1行で発生する信号電荷を第1の水平CCDに
供給し、第2行の信号電荷を第2の水平CODに供給し
て2行を組み合わせて読み出すように設けたカラー画像
用イメージセンサにとって好適なものとなる。
In such a charge transfer element, for example, two rows of photoelectric conversion elements adjacent to each other in the vertical direction of the light receiving section are assigned to one scanning line, and signal charges generated in the first row are supplied to a first horizontal CCD. However, it is suitable for a color image image sensor provided so that the signal charges of the second row are supplied to the second horizontal COD and the two rows are read out in combination.

すなわち、前記カラー用イメージセンサに於て、異った
色パターンから成るカラーフィルタを前記2行にそれぞ
れ配置することにより、色分離を良好にして1本の走査
線内で完全な形の色信号が得られ、高解像力のカラー画
像が得られる。
That is, in the color image sensor, by arranging color filters with different color patterns in each of the two rows, color separation is improved and a complete color signal is generated within one scanning line. can be obtained, and a high-resolution color image can be obtained.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、前記構造の電荷転送素子は、信号電荷の
割り振りのために水平CCDの駆動波形が複雑化される
と云う欠点を有していた。
However, the charge transfer element having the above structure has the disadvantage that the driving waveform of the horizontal CCD becomes complicated due to the allocation of signal charges.

すなわち、第5図に前記電荷転送素子の水平転送部に於
る電極パターンを図示して説明すると、2つの水平CC
DI、2を構成する水平転送電極3は水平方向に複数本
配置された2層構造のポリシリコンPo1yl、Po1
y2により設けられており、前記水平転送電極は略中央
部で第3のポリシリコンPo1y3により2分するよう
に設けられている。前記Po1y3は前記2層ポリシリ
コンPo lyl 、 Po 1y2の一部領域に形成
した窓4を介して基板とコンタクトされてシフトゲート
5を構成し、ゲート部のボテンシャルを!IJ?卸して
いる。
That is, to illustrate and explain the electrode pattern in the horizontal transfer section of the charge transfer element in FIG. 5, two horizontal CC
The horizontal transfer electrodes 3 constituting the DI, 2 are made of a two-layer structure of polysilicon Po1yl, Po1, which has a plurality of layers arranged in the horizontal direction.
y2, and the horizontal transfer electrode is provided so as to be divided into two approximately at the center by a third polysilicon Po1y3. The Po1y3 is contacted with the substrate through a window 4 formed in a partial region of the two-layer polysilicon Polyl and Po1y2 to form a shift gate 5, and the potential of the gate portion is changed. IJ? Wholesale.

このように構成された水平転送部は、電荷転送のために
、第6図に図示したような3種類の駆動パルスφA、φ
B、φCとシフトゲートパルスφ、Gが必要とされた。
The horizontal transfer section configured in this way uses three types of drive pulses φA and φ as shown in FIG. 6 for charge transfer.
B, φC and shift gate pulses φ, G were required.

しかも、第1の水平CCDIにおいて駆動パルスφ1が
印加される電極3のパケットに注入された電荷(図中、
黒丸で示している。)を第2の水平〇CDの対向電極に
シフトするとき、第6図からも明らかなように、駆動パ
ルスφ8.φCは不定期パルスとなって、駆動波形が複
雑化する。
Moreover, the charge injected into the packet of the electrode 3 to which the drive pulse φ1 is applied in the first horizontal CCDI (in the figure,
Indicated by a black circle. ) to the opposite electrode of the second horizontal 〇CD, as is clear from FIG. 6, the drive pulse φ8. φC becomes an irregular pulse, making the drive waveform complicated.

また、前記2つの水平CCDI、2の通常駆動のために
はそれぞれの電極に対応した駆動パルスが必要とされた
。更に、このような水平転送部はシフト動作が完了する
までの間、通常の水平転送が停止されるため、電荷読み
出しのために余計な時間が費やされた。
Further, in order to normally drive the two horizontal CCDIs 2, drive pulses corresponding to the respective electrodes were required. Furthermore, in such a horizontal transfer section, normal horizontal transfer is stopped until the shift operation is completed, so extra time is wasted for reading out the charges.

本発明の目的は、上記事情に鑑みなされたもので、通常
の周期的パルス波形によってシフト並びに水平転送が行
える電荷転送素子を提供することにある。
SUMMARY OF THE INVENTION An object of the present invention was made in view of the above circumstances, and it is an object of the present invention to provide a charge transfer element that can perform shifting and horizontal transfer using a normal periodic pulse waveform.

〔問題点を解決するための手段及び作用〕すなわち、本
発明の上記目的は、マトリクス状に配置された光電変換
素子の信号を、シフトゲートを介して互いに並置接続し
た少なくとも2本以上の水平CODから成る水平転送部
に振り分けて読み出す電荷転送素子において、前記水平
CODを2相駆動する転送電極の電極パターンがシフト
ゲートを介する水平CCD間で1相分だけ位相をずらす
ように配線されていることを特徴とする電荷転送素子に
より達成される。
[Means and effects for solving the problem] That is, the above object of the present invention is to convert the signals of photoelectric conversion elements arranged in a matrix into at least two horizontal CODs connected in parallel to each other via shift gates. In a charge transfer element that is distributed to and read out in a horizontal transfer section consisting of a charge transfer element, the electrode pattern of the transfer electrode that drives the horizontal COD in two phases is wired so that the phase is shifted by one phase between the horizontal CCDs via a shift gate. This is achieved by a charge transfer element characterized by:

2つの水平CCD間において互いに対応して配置された
転送電極の位相が逆相になるように配線されていること
により、1つの水平CCDに供給された信号は水平CC
D間に設けたシフトゲートの制御だけで別の水平CCD
に転送可能に設けられて信号の割り振りが容易−に行わ
れる。
By wiring the two horizontal CCDs so that the phases of the transfer electrodes arranged in correspondence with each other are opposite to each other, the signal supplied to one horizontal CCD is transferred to the horizontal CCD.
A separate horizontal CCD can be created by simply controlling the shift gate provided between D.
The signals can be easily allocated.

〔実施例〕〔Example〕

以下、本発明の実施例を図面に基づいて詳細に説明する
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明による電荷転送素子の1実施例を示すブ
ロック図である。なお、本実施例では互いに並置接続し
た2つの水平COD (HCCD)が2相駆動される場
合について述べる。
FIG. 1 is a block diagram showing one embodiment of a charge transfer device according to the present invention. In this embodiment, a case will be described in which two horizontal CODs (HCCDs) connected in parallel are driven in two phases.

図において、受光部10および垂直転送部11は簡略化
して1つのブロックとして示されている。
In the figure, the light receiving section 10 and the vertical transfer section 11 are simplified and shown as one block.

すなわち、マトリクス状に配置した複数の受光素子から
成る受光部10と、受光素子の垂直列に対応した垂直C
ODから成る垂直転送部11が配置されており、この垂
直転送部11の出力側には後述する水平転送部が配置さ
れている。
That is, the light receiving section 10 includes a plurality of light receiving elements arranged in a matrix, and the vertical C corresponding to the vertical rows of the light receiving elements.
A vertical transfer section 11 consisting of an OD is arranged, and a horizontal transfer section to be described later is arranged on the output side of this vertical transfer section 11.

前記水平転送部はシフトゲート電極12を介して互いに
並置接続された2つのHCCD13,14により構成さ
れ、それらの出力端には夫々バッファ・アンプ15.1
6が接続されている。
The horizontal transfer section is composed of two HCCDs 13 and 14 which are connected in parallel to each other via a shift gate electrode 12, and each has a buffer amplifier 15.1 at its output terminal.
6 is connected.

第2図は、前記電荷転送素子の水平転送部に於る電極パ
ターンを図示している。
FIG. 2 illustrates an electrode pattern in the horizontal transfer section of the charge transfer element.

前記2つのHCCD13.14を構成する水平転送電極
17は2本1組になって水平方向に多数配列された2層
ポリシリコンPo1y1.Po1y2によって設けられ
ている。
The horizontal transfer electrodes 17 constituting the two HCCDs 13 and 14 are made of two-layer polysilicon Po1y1. Provided by Po1y2.

本発明の特長とするところは、受光部1側に近接して配
置された第1のHCCDl3及び他方の第2のHCCD
l4との間に於て、互いに対向配置された電極間の位相
が逆相になるように駆動パルスφ、、φ、が印加される
。このため、前記2層ポリシリコンPo1yl、Po1
y2は後述するシフトゲート電極12が形成される箇所
に於て、第1のHCCDl3と第2のHCCDl4の転
送電極が水平方向に互いに1本ずれたように斜行状に配
線されている。従って、前記第1のHCCDl 3に駆
動パルスφ、が印加される電極と対向する位置の第2の
HCCD 14の電極には、水平方向に隣接する電極と
同じ駆動パルスφ、が印加されるように設けられている
The feature of the present invention is that the first HCCD13 and the other second HCCD are arranged close to the light receiving section 1 side.
14, drive pulses φ, φ, are applied so that the phases between the electrodes disposed opposite to each other are opposite to each other. Therefore, the two-layer polysilicon Po1yl, Po1
y2 is a location where a shift gate electrode 12, which will be described later, is formed, and the transfer electrodes of the first HCCD 13 and the second HCCD 14 are wired diagonally so that they are shifted by one line from each other in the horizontal direction. Therefore, the same drive pulse φ as the horizontally adjacent electrode is applied to the electrode of the second HCCD 14 opposite to the electrode to which the drive pulse φ is applied to the first HCCD 13. It is set in.

前記2層ポリシリコンPo1y1.Po1y2上には略
中央部で該2層ポリシリコンPo1yl、 Po1y2
と交差するように第3のポリシリコンPo1y3が配置
され、前記2層ポリシリコンを上下に2分している。前
記第3のポリシリコンPo1y3は前記2層ポリシリコ
ンPo1yl、Po1y2の一部領域、本実施例では5
本置きの転送電極に対応して開口された窓18を介して
基板とコンタクトされ、シフトゲート12を形成する。
The two-layer polysilicon Po1y1. On Po1y2, the two-layer polysilicon Po1yl and Po1y2 are located approximately in the center.
A third polysilicon Po1y3 is arranged so as to intersect with the polysilicon layer, dividing the two-layer polysilicon into two parts, upper and lower. The third polysilicon Po1y3 is a partial region of the two-layer polysilicon Po1yl and Po1y2, and in this embodiment, 5
A shift gate 12 is formed by contacting the substrate through a window 18 opened corresponding to the transfer electrode.

なお、前記窓18に対応するPo1y1.Po1y2は
接断されているため、転送路領域外で連続されるように
配線されている。
It should be noted that Po1y1.corresponding to the window 18. Since Po1y2 is disconnected, it is wired so as to be continuous outside the transfer path area.

次に、このように構成された本発明による電荷転送素子
の動作について、第3図及び第4図を参照して説明する
Next, the operation of the charge transfer device according to the present invention configured as described above will be explained with reference to FIGS. 3 and 4.

受光部10で発生した信号電荷が垂直転送部11により
転送され、第1のHCCD 13に送り込まれる。この
とき、シフトゲート12がLレベルに設けられて該ゲー
トのポテンシャルバリアが高い状態にあると、電荷は第
2のHCCD 14にシフトされず、各転送電極に印加
される駆動パルスφ^。
Signal charges generated in the light receiving section 10 are transferred by the vertical transfer section 11 and sent to the first HCCD 13. At this time, if the shift gate 12 is provided at L level and the potential barrier of the gate is in a high state, the charge is not shifted to the second HCCD 14 and the drive pulse φ^ applied to each transfer electrode.

φ、により2相駆動されて、通常の水平転送が行われる
。一方、駆動パルスφ、が印加されている第1のHCC
Dl3の電極部下のパケットに電荷が注入され、かつシ
フトゲート12がHレベルに設けられてポテンシャルレ
ベルが所定の電位まで深く設定されていると、電荷は対
応する第2のHCCDl4の電極部下のパケットへとシ
フトされる。この際、第1のHCCD 13の電極部下
の電荷が水平方向には転送されず、第2のHCCDl4
の電極部下へシフトされる様子を第4図に示す。
Normal horizontal transfer is performed by two-phase driving by φ. On the other hand, the first HCC to which the drive pulse φ is applied
When charge is injected into the packet under the electrode of Dl3 and the shift gate 12 is set at H level to set the potential level deep to a predetermined potential, the charge is injected into the packet under the electrode of the corresponding second HCCDl4. will be shifted to. At this time, the charge under the electrode of the first HCCD 13 is not transferred in the horizontal direction, and the charge under the electrode of the first HCCD 13 is not transferred horizontally.
FIG. 4 shows how the electrode is shifted below the electrode.

すなわち、各転送電極下のポテンシャルレベルは電荷転
送のためにPo1yl下とPo1y2下では差異が設け
られており、この差異は水平方向に隣接するパケット間
のバリアとして作用する(1=1+)。−方、第1のH
CCDl 3のポテンシャルレベルの深い位置に注入さ
れた電荷は、水平方向に隣接するPo1y2電極下のポ
テンシャルレベルが水平転送のために相対的に深くなる
以前に、対応する第2のHCCDl4のPo1yl電極
下のポテンシャルレベルが深く設けられるため(t”b
)、水平転送されずに第2のHCCD14ヘシフトされ
る。
That is, the potential level under each transfer electrode is different between Po1yl and Po1y2 for charge transfer, and this difference acts as a barrier between horizontally adjacent packets (1=1+). - side, first H
The charges injected into the deep potential level of CCDl 3 are transferred to the lower potential level of the corresponding second HCCDl4 under the Polyl electrode before the potential level under the horizontally adjacent Poly2 electrode becomes relatively deep due to horizontal transfer. Since the potential level of (t”b
), are shifted to the second HCCD 14 without being horizontally transferred.

第2のHCCDl 4にシフトされた電荷は、第1のH
CCD 13に於て水平転送されるのと同様に駆動パル
スφA、φ冠により2相駆動されて水平転送される。な
お、このときシフトゲート電極12にはLレベル電圧が
印加されてこのシフトゲート部は垂直方向のポテンシャ
ルバリアとして作用する。
The charge shifted to the second HCCDl 4 is transferred to the first H
Similar to the horizontal transfer in the CCD 13, the signal is driven in two phases by drive pulses φA and φ crown and horizontally transferred. Note that at this time, an L level voltage is applied to the shift gate electrode 12, and this shift gate portion acts as a vertical potential barrier.

〔発明の効果〕〔Effect of the invention〕

以上記載のとおり、本発明の電荷転送素子によれば、対
応する水平〇CDの転送電極が逆相になるように配線さ
れているため、振り分けはシフトゲート動作だけで行う
ことが出来、また、転送パルスはシフト時も不定期な部
分のない周期パルスで行われて駆動制御が簡単化される
。更に水平転送とシフト動作が並列的に行え、シフト動
作に要する時間も短縮される。
As described above, according to the charge transfer element of the present invention, since the transfer electrodes of the corresponding horizontal CD are wired so as to have opposite phases, distribution can be performed only by shift gate operation, and The transfer pulse is performed as a periodic pulse without irregular portions even during shifting, which simplifies drive control. Furthermore, horizontal transfer and shift operations can be performed in parallel, and the time required for shift operations is also shortened.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の1実施例による電荷転送素子の構成図
、第2図は第1図の素子の水平転送部に於る電極配線図
、第3図は動作を説明するタイミング図、第4図も同じ
く動作を説明するために模式的に示した斜視図、第5図
は従来素子の電極配線図、第6図は従来素子の動作を示
すタイミング図である。 10:受光部、 11:垂直転送部、 12:シフトゲート電極、 I3:第1のHCOD、1
4:第2のHCCD、   15,16:バッファアン
プ、17:水平転送電極、 18:窓 ニ、゛33図 第4図 “0°°′  6−百一一酊一 第5図 第6図 Φ5q
FIG. 1 is a configuration diagram of a charge transfer device according to an embodiment of the present invention, FIG. 2 is an electrode wiring diagram in the horizontal transfer section of the device in FIG. 1, and FIG. 3 is a timing diagram explaining the operation. 4 is a perspective view schematically shown to explain the operation, FIG. 5 is an electrode wiring diagram of the conventional element, and FIG. 6 is a timing diagram showing the operation of the conventional element. 10: Light receiving section, 11: Vertical transfer section, 12: Shift gate electrode, I3: First HCOD, 1
4: Second HCCD, 15, 16: Buffer amplifier, 17: Horizontal transfer electrode, 18: Window 2, Figure 33 Figure 4 "0°°' 6-111 Drunk Figure 5 Figure 6 Φ5q

Claims (1)

【特許請求の範囲】[Claims]  マトリクス状に配置された光電変換素子の信号を、シ
フトゲートを介して互いに並置接続した少なくとも2本
以上の水平CCDから成る水平転送部に振り分けて読み
出す電荷転送素子において、前記水平CCDを2相駆動
する転送電極の電極パターンがシフトゲートを介する水
平CCD間で1相分だけ位相をずらすように配線されて
いることを特徴とする電荷転送素子。
In a charge transfer element that distributes and reads signals from photoelectric conversion elements arranged in a matrix to a horizontal transfer section consisting of at least two horizontal CCDs connected in parallel via a shift gate, the horizontal CCDs are driven in two phases. A charge transfer element characterized in that electrode patterns of transfer electrodes are wired so as to shift the phase by one phase between horizontal CCDs via a shift gate.
JP62325228A 1987-12-24 1987-12-24 Charge transfer device Pending JPH01168060A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62325228A JPH01168060A (en) 1987-12-24 1987-12-24 Charge transfer device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62325228A JPH01168060A (en) 1987-12-24 1987-12-24 Charge transfer device

Publications (1)

Publication Number Publication Date
JPH01168060A true JPH01168060A (en) 1989-07-03

Family

ID=18174454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62325228A Pending JPH01168060A (en) 1987-12-24 1987-12-24 Charge transfer device

Country Status (1)

Country Link
JP (1) JPH01168060A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005166826A (en) * 2003-12-01 2005-06-23 Matsushita Electric Ind Co Ltd Solid-state imaging apparatus and camera including the same
US7602432B2 (en) 2005-11-11 2009-10-13 Sony Corporation Solid-state imaging element and solid-state imaging device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230394A (en) * 1975-09-02 1977-03-08 Philips Nv Charge transfer device
JPS6042745B2 (en) * 1981-10-30 1985-09-25 ブラザー工業株式会社 Bobbin thread replenishment device for lockstitch sewing machines

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5230394A (en) * 1975-09-02 1977-03-08 Philips Nv Charge transfer device
JPS6042745B2 (en) * 1981-10-30 1985-09-25 ブラザー工業株式会社 Bobbin thread replenishment device for lockstitch sewing machines

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005166826A (en) * 2003-12-01 2005-06-23 Matsushita Electric Ind Co Ltd Solid-state imaging apparatus and camera including the same
JP4551085B2 (en) * 2003-12-01 2010-09-22 パナソニック株式会社 Solid-state imaging device, imaging device
US7602432B2 (en) 2005-11-11 2009-10-13 Sony Corporation Solid-state imaging element and solid-state imaging device

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