JPH01167211A - Diamond-like carbon film and production thereof - Google Patents
Diamond-like carbon film and production thereofInfo
- Publication number
- JPH01167211A JPH01167211A JP62324048A JP32404887A JPH01167211A JP H01167211 A JPH01167211 A JP H01167211A JP 62324048 A JP62324048 A JP 62324048A JP 32404887 A JP32404887 A JP 32404887A JP H01167211 A JPH01167211 A JP H01167211A
- Authority
- JP
- Japan
- Prior art keywords
- diamond
- layer
- carbon
- film
- amorphous carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 239000002994 raw material Substances 0.000 claims description 5
- 238000001308 synthesis method Methods 0.000 claims 3
- 238000002834 transmittance Methods 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 37
- 239000010432 diamond Substances 0.000 description 16
- 229910003460 diamond Inorganic materials 0.000 description 15
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 10
- 239000007789 gas Substances 0.000 description 9
- 230000000704 physical effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 230000035484 reaction time Effects 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 ethylene, propylene Chemical group 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229940032007 methylethyl ketone Drugs 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はダイヤモンドライク炭素膜及びその製造法の係
り、特に内部応力が小さく、光の透過性。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a diamond-like carbon film and a method for producing the same, particularly having low internal stress and light transmittance.
表面の平滑性に優れた炭素膜とその製造法に関する。This article relates to a carbon film with excellent surface smoothness and its manufacturing method.
ダイヤモンドは硬度、熱の伝導性、電気的絶縁性、紫外
〜赤外域光の透過性、化学的安定性など優れた特性を持
っている。ダイヤモンドの合成法として高圧法が確立さ
れているが薄膜状のダイヤモンドを合成することはでき
ない。薄膜状のダイヤモンドは光学機器のレンズ、窓コ
ーディング材。Diamond has excellent properties such as hardness, thermal conductivity, electrical insulation, transparency in the ultraviolet to infrared region, and chemical stability. The high-pressure method has been established as a method for synthesizing diamond, but it is not possible to synthesize diamond in the form of a thin film. Thin film diamond is used as a coating material for optical equipment lenses and windows.
半導体デバイスのパッシベーション膜、放熱基板。Passivation film for semiconductor devices, heat dissipation substrate.
音響機器の振動板さらには工具等の超硬コーテイング材
など多方面の用途がある。薄膜ダイヤモンドを形成する
従来技術としては、時開60−86096にみられるよ
うに、メタン等の炭化水素と水素との混合ガスに高周波
、マイクロ波等の電磁波エネルギを印加してプラズマを
発生せしめ、表面を研磨処理したシリコンウェハ等の」
二にダイヤモンドを析出させる方法がある。前記した従
来技術によれば、1〜数μm/hの成長速度でダイヤモ
ンド薄膜を形成することが可能である。It has many uses, including diaphragms for audio equipment and carbide coatings for tools. As a conventional technique for forming a thin film diamond, as shown in Jikai 60-86096, plasma is generated by applying electromagnetic wave energy such as high frequency or microwave to a mixed gas of hydrocarbon such as methane and hydrogen. silicon wafers etc. whose surfaces have been polished
The second method is to precipitate diamonds. According to the prior art described above, it is possible to form a diamond thin film at a growth rate of 1 to several μm/h.
しかしながら、前記した従来技術は膜応力や膜表面の平
滑性の点については配慮がなされておらず、少し広い表
面積をもつ基板ではクラックが入り易すく、レンズ、窓
のコーティングに使用する表面が粗いので反射率が高く
なり透過率が低下し、又、磁気ディスクの保護膜として
は表面が粗いのでヘットの低浮上が達成できない等の問
題があった。However, the above-mentioned conventional technology does not take into account film stress or film surface smoothness, and substrates with a slightly large surface area are prone to cracking, and the surfaces used for coating lenses and windows are rough. Therefore, the reflectance increases and the transmittance decreases, and since the surface of the protective film for the magnetic disk is rough, there are problems such as the inability to achieve a low flying height of the head.
本発明の目的は、ダイヤモンド又はダイヤモンドライク
炭素の特性を劣化させることなく、膜応力が小さく、表
面平滑性に優れたダイヤモンドライク炭素膜とその合成
方法を提供するにある。An object of the present invention is to provide a diamond-like carbon film that has low film stress and excellent surface smoothness without deteriorating the properties of diamond or diamond-like carbon, and a method for synthesizing the same.
前記目的は、非晶質炭素成分の多いダイヤモンド−ライ
ク炭素膜と非晶質炭素成分の少ない炭素膜とを交互に層
状に析出させた膜によって達成される。The above object is achieved by a film in which a diamond-like carbon film containing a large amount of amorphous carbon and a carbon film containing a small amount of amorphous carbon are deposited in alternating layers.
非晶質炭素成分の多いダイヤモンドライク炭素膜は内部
応力が小さく、表面平滑性に優れている反面、硬度、光
の透過性及び電気抵抗率が非晶質炭素成分の少ないダイ
ヤモンドライク炭素膜に比べ相対的に悪い。反対に、非
晶質炭素成分の少ないダイヤモンドライク炭素膜は内部
応力が大きく、表面は粗いが硬度、光の透過性及び電気
抵抗率が相対的に良い。前記2種類の膜を交互に層状に
析出させ、最」二層を非晶質炭素成分の多いダイヤモン
ドライク炭素膜とする。層状構成とすると、非晶質炭素
成分の少ない層の応力は、非晶質炭素成分の多い膜によ
って吸収されて小さくなり、また、最上層が非晶質炭素
成分が多い層であるため平滑性がよくなる。前記層状構
造のダイヤモンドライク炭素膜は、基板の温度を周期的
に変化させる方法、マイクロ波、高周波等の電磁波エネ
ルギを周期的に変える方法、炭素源の濃度を周期的に変
える方法及び反応圧力を周期的に変える方法により容易
に形成される。すなわち、基板温度及び電磁波エネルギ
密度が高く、炭素源ガス濃度及び反応圧力が低い方が炭
化水素の分解反応が進行し易く、膜中にとり込まれる水
素量が少なくなり非晶質炭素分の少ないダイヤモンドラ
イク炭素膜が形成できる。反対に基板温度及び電磁波エ
ネルギ密度が低く、炭素源ガス濃度及び反応圧力が高い
方が炭化水素の分解反応が進まず、膜中にとり込まれる
水素量が多くなり非晶質炭素分の多いダイヤモンドライ
ク炭素膜が形成される。したがって、前記操作条件を周
期的に変化させることにより、非晶炭素の含有量の多い
層と少ない層とからなるダイヤモンドライク炭素膜を形
成することができる。Diamond-like carbon films with a large amount of amorphous carbon have low internal stress and excellent surface smoothness, but have lower hardness, light transmittance, and electrical resistivity than diamond-like carbon films with a small amount of amorphous carbon. Relatively bad. On the other hand, a diamond-like carbon film containing a small amount of amorphous carbon has a large internal stress and a rough surface, but has relatively good hardness, light transmittance, and electrical resistivity. The two types of films are deposited alternately in layers, and the two most layers are diamond-like carbon films containing a large amount of amorphous carbon. With a layered structure, the stress in the layer with less amorphous carbon component is absorbed and reduced by the layer with more amorphous carbon component, and since the top layer is the layer with more amorphous carbon component, smoothness is improved. gets better. The diamond-like carbon film with the layered structure can be produced by a method of periodically changing the temperature of the substrate, a method of periodically changing the electromagnetic wave energy such as microwave or high frequency, a method of periodically changing the concentration of the carbon source, and a method of changing the reaction pressure. It is easily formed by a periodic method. In other words, when the substrate temperature and electromagnetic energy density are high and the carbon source gas concentration and reaction pressure are low, the hydrocarbon decomposition reaction progresses more easily, and the amount of hydrogen incorporated into the film is reduced, resulting in a diamond with less amorphous carbon content. A carbon-like film can be formed. On the other hand, when the substrate temperature and electromagnetic energy density are low and the carbon source gas concentration and reaction pressure are high, the hydrocarbon decomposition reaction does not progress, and the amount of hydrogen incorporated into the film increases, resulting in a diamond-like film with a high amorphous carbon content. A carbon film is formed. Therefore, by periodically changing the operating conditions, it is possible to form a diamond-like carbon film consisting of a layer with a high content of amorphous carbon and a layer with a low content of amorphous carbon.
以下、本発明の一実施例を第1図を用いて説明する。 An embodiment of the present invention will be described below with reference to FIG.
メタン1と水素2は流量計3及び4により計量されたの
ちプラズマ反応器5に供給される。プラズマ反応器5は
真空ポンプ6により減圧されている。マイクロ波発振器
7から2.450Haのマイクロ波が発振され、アイソ
レータ8.チューナ9、パワモニタ10を経てプラズマ
反応器3に印加される。供給ガスはこのマイクロ波によ
って分解し、ラジカルやイオン種を生成する。シリコン
基板11は、基板ホルダー12」二に置かれプラズマ中
にさらされる。基板はマイクロ波によって400〜5o
O′Cに加熱されるが、ヒータ13によりさらに高温ま
で加熱できる。Methane 1 and hydrogen 2 are metered by flowmeters 3 and 4 and then supplied to plasma reactor 5. The pressure of the plasma reactor 5 is reduced by a vacuum pump 6. A microwave of 2.450 Ha is oscillated from the microwave oscillator 7, and the isolator 8. The power is applied to the plasma reactor 3 via a tuner 9 and a power monitor 10. The supplied gas is decomposed by the microwaves, producing radicals and ionic species. A silicon substrate 11 is placed on a substrate holder 12'' and exposed to plasma. The substrate is heated to 400~5o by microwave.
Although it is heated to O'C, it can be heated to a higher temperature by the heater 13.
原料ガスとしては、メタル以下にエタン、プロパン、ブ
タン等の飽和炭化水素、エチレン、プロピレン、アセチ
レン等の不飽和炭化素水、メタノール、エタノール等の
アルコール類、アセトン。Raw material gases include metals, saturated hydrocarbons such as ethane, propane, and butane, unsaturated hydrocarbons such as ethylene, propylene, and acetylene, alcohols such as methanol and ethanol, and acetone.
メチル−エチルケトン等のケトン類、メチルエーテル、
エチルエーテル等のエーテル類等を用いることができ、
必要に応じて水、アルゴン等のガス中に混入させてもよ
い。Ketones such as methyl-ethyl ketone, methyl ether,
Ethers such as ethyl ether can be used,
It may be mixed into water or a gas such as argon, if necessary.
原料ガスを分解する手段としては、マイクロ波以外に高
周波、ラジオ波、直流プラズマ等が用いられる。また、
熱フィラメント等の高温熱源を利用することができる。As means for decomposing the raw material gas, in addition to microwaves, high frequency waves, radio waves, direct current plasma, etc. are used. Also,
A high temperature heat source such as a hot filament can be used.
基板は、シリコン以外に銅、金、鉄、ニッケル。The substrate is made of copper, gold, iron, and nickel in addition to silicon.
タングステン等の金属を、又、ガラス、SiC。Metals such as tungsten, glass, and SiC.
等のセラミックスを用いることができる。Ceramics such as can be used.
本発明で言う、非晶質炭素含量の少ない層とは少なくと
もX線回折によりダイヤモンドにもとづく回折像がみら
れる膜を意味し、非晶質炭素含量の多い層とは、X線回
折ではダイヤモンドにもとづく回折像が不明僚であって
も電気抵抗率が108Ω・印以上である膜を意味する。In the present invention, a layer with a low content of amorphous carbon means a film in which a diffraction image based on diamond can be seen in at least X-ray diffraction, and a layer with a high content of amorphous carbon means a film that shows a diamond-based diffraction image in X-ray diffraction. It means a film with an electrical resistivity of 108 Ω·mark or more even if the original diffraction pattern is unclear.
以下、具体的実施例を用いて本発明を説明する。The present invention will be explained below using specific examples.
〔実施例1〕
第1図に示した装置を用い、以下に示す条件下でダイヤ
モンド膜を形成し、物性を評価した。[Example 1] Using the apparatus shown in FIG. 1, a diamond film was formed under the conditions shown below, and its physical properties were evaluated.
反応器:内径40nwnφX1X1000n石英ガラス
製
原料ガス:メタン濃度0.5〜3■0]%基 板:シリ
コンウェハ(20nnφ)圧 カニ5−20Ton
基板温度: 700〜900 ’C
マイクロ波出出ニ 500〜100OW反応時間=4n
得られた膜は、X線回折ではダイヤモンドの(111)
(220)(311,)面にもとづく回折ピータのみが
明瞭にみられた。表1に測定した物性値を示す。硬度2
表面での反射率を除外した膜内体の光透過率等は優れて
いるが、表面粗さ及び膜の内部応力が大きい。Reactor: Inner diameter 40nwnφ 100OW reaction time = 4n The obtained film shows diamond (111) by X-ray diffraction.
Only the diffraction patterns based on the (220) (311,) planes were clearly seen. Table 1 shows the measured physical property values. Hardness 2
Although the light transmittance of the inner film excluding the reflectance at the surface is excellent, the surface roughness and internal stress of the film are large.
表1
〔実施例2〕
第1図に示す装置を用い、以下に示す条件下でダイヤモ
ンド膜を形成し、物性を評価した。Table 1 [Example 2] Using the apparatus shown in FIG. 1, a diamond film was formed under the conditions shown below, and its physical properties were evaluated.
原料ガス:メタン濃度10〜30vo ]%基板:シリ
コンウエハ(20mmφ)
圧 カニ2O−60Ton
基板温度:400〜700°C
マイクメ波出カニ 300〜600W
反応時間:4n
得られた膜は、X線回折ではダイヤモンドの(111)
、(220)及び(311)面にもとづく回折ピークが
認められたものと不明僚なものがあった。これは相対的
に非晶質の炭素成分の含量が多くなるためと考えられる
。しかし、電気抵抗率は108Ω・0以上で、グラフア
ト及び熱分解非晶質炭素と異なり絶縁体に近いものであ
った。Raw material gas: Methane concentration 10-30vo ]% Substrate: Silicon wafer (20mmφ) Pressure: 2O-60Ton Substrate temperature: 400-700°C Microwave output crab 300-600W Reaction time: 4n The obtained film was analyzed by X-ray diffraction So, Diamond's (111)
, (220) and (311) planes were observed, and others were unclear. This is thought to be due to the relatively large content of amorphous carbon components. However, the electrical resistivity was 10 8 Ω·0 or more, which was close to that of an insulator, unlike graphite and pyrolyzed amorphous carbon.
表2に物性値を示す。表1に示した膜に比べ、硬度及び
光の透過性は劣るが、内部応力及び表面の平滑が優れて
いる。Table 2 shows the physical property values. Compared to the films shown in Table 1, the hardness and light transmittance are inferior, but the internal stress and surface smoothness are superior.
表2
〔実施例3〕
第1図に示す装置を用い、以下に示す条件下でダイヤモ
ンド膜を形成し、物性を評価した。Table 2 [Example 3] Using the apparatus shown in FIG. 1, a diamond film was formed under the conditions shown below, and its physical properties were evaluated.
原料ガス:メタン濃度10vo1%
基 板:シリコンウェハ(2011wnφ)マイクロ
汲出カニ600W
反応時間=4n
を固定し、圧力20 T o n一定条件下基板温度を
400〜800°Cの範囲で変化させた場合(ケースA
)、基板温度を70℃一定とし、圧力を1〜40Tor
r範囲で変化させた場合(ケースB)について実験を行
ない、得られた膜の物性を評価した。結果を表3に示す
。Raw material gas: Methane concentration 10vo1% Substrate: Silicon wafer (2011wnφ) Micro pumping crab 600W Reaction time = 4n fixed, pressure 20ton constant condition, substrate temperature varied in the range of 400 to 800°C (Case A
), the substrate temperature was kept constant at 70°C, and the pressure was 1 to 40 Torr.
An experiment was conducted for the case where the temperature was varied within the r range (Case B), and the physical properties of the obtained film were evaluated. The results are shown in Table 3.
表3
以上の結果、非晶炭素含量の少い層と非晶炭素含量の多
い層とからなる層状構造の膜を形成すれば、両層の欠点
を補い内部応力が小さく、表面平滑性及び光透過性の優
れた膜が形成できることが明らかである。Table 3 As a result, if a film with a layered structure consisting of a layer with a low amorphous carbon content and a layer with a high amorphous carbon content is formed, the defects of both layers can be compensated for, the internal stress is small, the surface smoothness is improved, and the optical It is clear that a membrane with excellent permeability can be formed.
本発明によれば、従来よりも内部応力が小さく表面の平
滑性及び光の透過性に優れたダイヤモンドライク炭素膜
を形成することができる。According to the present invention, it is possible to form a diamond-like carbon film that has less internal stress than conventional ones and has excellent surface smoothness and light transmittance.
(II)(II)
第1図は本発明の一実施例を示す構成図である。
1・・・メタン、2・・・水素、5・・・プラズマ反応
器、7・・・マイクロ波発振器、1]・シリコン基板。FIG. 1 is a block diagram showing an embodiment of the present invention. 1... Methane, 2... Hydrogen, 5... Plasma reactor, 7... Microwave oscillator, 1]-Silicon substrate.
Claims (1)
層と非晶質炭素の含有率が少ないダイヤモンドライク炭
素層とから成ることを特徴とするダイヤモンドライク炭
素膜。 2、非晶質炭素の含有率が多いダイヤモンドライク炭素
層と非晶質炭素の含有率が少ないダイヤモンドライク炭
素層とから成るダイヤモンドライク炭素膜の製造法で気
相からの合成法において、反応圧力を同期的に変えるこ
とを特徴とするダイヤモンドライク炭素膜の製造法。 3、気相からの合成法において、基板の温度を周期的に
変えることを特徴とする第2図項記載のダイヤモンドラ
イク炭素膜の製造法。 4、気相からの合成法において、原料ガスに印加するマ
イクロ波、高周波等の電磁波のエネルギを周期的に変え
ることを特徴とする第2項記載のダイヤモンドライク炭
素膜の製造法。 5、気相からの合成法において、炭素膜の濃度を周期的
に変えることを特徴とする第2項記載のダイヤモンドラ
イク炭素膜の製造法。[Claims] 1. A diamond-like carbon film comprising a diamond-like carbon layer with a high content of amorphous carbon and a diamond-like carbon layer with a low content of amorphous carbon. 2. A method for manufacturing a diamond-like carbon film consisting of a diamond-like carbon layer with a high content of amorphous carbon and a diamond-like carbon layer with a low content of amorphous carbon. A method for producing a diamond-like carbon film characterized by synchronously changing the 3. The method for producing a diamond-like carbon film as described in Figure 2, which is characterized in that the temperature of the substrate is periodically changed in the synthesis method from the gas phase. 4. The method for producing a diamond-like carbon film according to item 2, characterized in that in the gas phase synthesis method, the energy of electromagnetic waves such as microwaves and high frequency waves applied to the raw material gas is periodically changed. 5. The method for producing a diamond-like carbon film according to item 2, characterized in that the concentration of the carbon film is periodically changed in the synthesis method from the gas phase.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62324048A JPH01167211A (en) | 1987-12-23 | 1987-12-23 | Diamond-like carbon film and production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62324048A JPH01167211A (en) | 1987-12-23 | 1987-12-23 | Diamond-like carbon film and production thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01167211A true JPH01167211A (en) | 1989-06-30 |
Family
ID=18161570
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62324048A Pending JPH01167211A (en) | 1987-12-23 | 1987-12-23 | Diamond-like carbon film and production thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01167211A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5135730A (en) * | 1990-03-28 | 1992-08-04 | Kabushiki Kaisha Kobe Seiko Sho | Method and apparatus for synthesizing diamond by combustion |
US5455081A (en) * | 1990-09-25 | 1995-10-03 | Nippon Steel Corporation | Process for coating diamond-like carbon film and coated thin strip |
JP2001089120A (en) * | 1999-09-22 | 2001-04-03 | Hitachi Ltd | Microwave-heating device for active carbon |
JP2009185314A (en) * | 2008-02-04 | 2009-08-20 | Meiji Univ | Apparatus for producing dlc film, member therewith, and production method therefor |
JP2010269944A (en) * | 2009-05-19 | 2010-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for producing graphite thin film |
US7947372B2 (en) * | 2005-08-18 | 2011-05-24 | Sulzer Metaplas Gmbh | Substrate coated with a layered structure comprising a tetrahedral carbon layer and a softer outer layer |
JP2013163600A (en) * | 2012-02-09 | 2013-08-22 | Nippon Telegr & Teleph Corp <Ntt> | Method for producing graphite thin film |
-
1987
- 1987-12-23 JP JP62324048A patent/JPH01167211A/en active Pending
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5135730A (en) * | 1990-03-28 | 1992-08-04 | Kabushiki Kaisha Kobe Seiko Sho | Method and apparatus for synthesizing diamond by combustion |
US5455081A (en) * | 1990-09-25 | 1995-10-03 | Nippon Steel Corporation | Process for coating diamond-like carbon film and coated thin strip |
JP2001089120A (en) * | 1999-09-22 | 2001-04-03 | Hitachi Ltd | Microwave-heating device for active carbon |
US7947372B2 (en) * | 2005-08-18 | 2011-05-24 | Sulzer Metaplas Gmbh | Substrate coated with a layered structure comprising a tetrahedral carbon layer and a softer outer layer |
JP2009185314A (en) * | 2008-02-04 | 2009-08-20 | Meiji Univ | Apparatus for producing dlc film, member therewith, and production method therefor |
JP2010269944A (en) * | 2009-05-19 | 2010-12-02 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for producing graphite thin film |
JP2013163600A (en) * | 2012-02-09 | 2013-08-22 | Nippon Telegr & Teleph Corp <Ntt> | Method for producing graphite thin film |
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