JPH01160888A - Local heat-treatment using beam - Google Patents
Local heat-treatment using beamInfo
- Publication number
- JPH01160888A JPH01160888A JP62317917A JP31791787A JPH01160888A JP H01160888 A JPH01160888 A JP H01160888A JP 62317917 A JP62317917 A JP 62317917A JP 31791787 A JP31791787 A JP 31791787A JP H01160888 A JPH01160888 A JP H01160888A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- heat treatment
- treatment method
- ozone
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 33
- 239000000463 material Substances 0.000 claims abstract description 43
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 36
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000001301 oxygen Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000010894 electron beam technology Methods 0.000 claims abstract description 12
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052753 mercury Inorganic materials 0.000 claims abstract description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 4
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000000873 masking effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 239000007789 gas Substances 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 235000021251 pulses Nutrition 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は例えば酸素が不充分で＠電導特性を示さない
イットリウム・バリウム・鋼酸化物に熱処理を施し酸素
を注入して超電導パターン形状するビームを用いた局部
熱処理方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] This invention is directed to a beam forming a superconducting pattern by heat-treating yttrium, barium, and steel oxides, which do not exhibit conductive properties due to insufficient oxygen, and injecting oxygen. The present invention relates to a local heat treatment method using.
この明細書においては、熱処理により超電導パターンを
形成する場合を例に説明する。In this specification, a case where a superconducting pattern is formed by heat treatment will be explained as an example.
第８図は例えば日経マイクロデバイス、 １９８７８月
号ｐ１ｌ６〜１１７に示された従来の超電導材の焼成方
法の工程？示すブロック図である。従来の超電導材の形
成においては、例えばＹ、Ｏ，とＢａＣ０１（！：Ｃｕ
Ｏの各セラミックの様な超電導材を構成する各材料を機
械的に粉砕して粉末上になった物を混合したｉｅｌ後で
高圧下で圧縮しｔｆｌ、真空雰囲気あるいは酸素雰囲気
の中、高温で焼結するｔｆｌという方法を繰り返すこと
により製造されている。このような従来の方法で超電導
パターンを形成するためには、例えば茗４図の工程図に
示すように、上記ｔｅｌ〜ｔｆｌの工程で形成した焼結
体ｔＦｆｒ望のパターン形状に成形し直してｔｈｌ、再
び真空雰囲気あるいは酸素雰囲気で高温で焼結し直すｆ
ＬＩことになる。しかし、この方法では微細に精度よく
形成するのは離しい。Figure 8 shows, for example, the steps of the conventional firing method for superconducting materials shown in Nikkei Microdevice, August 1987 issue, pages 116-117. FIG. In the formation of conventional superconducting materials, for example, Y, O, and BaC01 (!:Cu
The materials constituting superconducting materials such as O ceramics are mechanically pulverized and the resulting powder is mixed into IEL, then compressed under high pressure, TFL, and heated at high temperature in a vacuum or oxygen atmosphere. It is manufactured by repeating the sintering method called TFL. In order to form a superconducting pattern using such a conventional method, for example, as shown in the process diagram of Figure 4, the sintered body tFfr formed in the steps tel to tfl is reshaped into the desired pattern shape. thl, re-sinter at high temperature in a vacuum atmosphere or oxygen atmosphere f
It will be LI. However, with this method, it is difficult to form fine particles with high accuracy.
従来の熱処理は以上のような方法で行なわれていたので
、被熱処理材の全体が熱処理射されＩて全体が超電導に
なるため、パターンを形成するために予め熱６理前にパ
ターンを形成しておくか、または熱処理後ＶＣエツチン
グなどの方法によりパターンを形成しなければならない
などの問題点があった。Conventional heat treatment was carried out using the method described above, so that the entire material to be heat treated was subjected to heat treatment and became superconducting, so a pattern was formed in advance before the heat treatment. There are problems in that a pattern must be formed by a method such as VC etching or the like after heat treatment.
この発明は上記のような問題点を解消するためになされ
たもので、所定部分のみに簡便に酸素を添加でき、例え
ば所望の超電導パターンが簡便かつ安定に得られるビー
ムを用いた局部熱処理方法を提供することを目的として
いる。This invention was made to solve the above-mentioned problems, and it provides a local heat treatment method using a beam that allows oxygen to be easily added only to a predetermined portion, for example, to easily and stably obtain a desired superconducting pattern. is intended to provide.
この発明のビームを用いた局部熱処理方法は、励起・解
離した酸素又はオゾンの存在する雰囲気を形成する工程
、及び上記雰囲気で被加熱処理材の所定部分にレーザビ
ーム又は電子ビーム全照射・加熱して、上記ビームが照
射された上記所定部分に酸素？添加する工程を施すもの
である。The local heat treatment method using a beam according to the present invention includes a step of forming an atmosphere containing excited and dissociated oxygen or ozone, and irradiating and heating a predetermined portion of the material to be heated with a laser beam or an electron beam in the above atmosphere. So, is there oxygen in the predetermined area irradiated with the beam? This is a process of adding.
この発明におけるレーザや′電子ビームは制御性に優れ
所定部分を局所的に熱処理を施すことができるので、簡
便、かつ安定に所定の＠電導パターンを得ることができ
る。また励起・解離した酸素又はオゾンの存在する雰囲
気中でレーザや電子ビームを照射しているので、照射部
分に酸素がドープされやすく、短時間又は低温で熱処理
が施せ、所望の組成に形成できる。Since the laser and electron beam in this invention have excellent controllability and can locally heat-treat a predetermined portion, a predetermined conductive pattern can be easily and stably obtained. In addition, since laser or electron beam irradiation is performed in an atmosphere containing excited and dissociated oxygen or ozone, the irradiated area is easily doped with oxygen, and heat treatment can be performed in a short time or at a low temperature to form a desired composition.
以下この発明、−実施列について説明する。 This invention will be explained below regarding the -implementation sequence.
第１図はこの発明の一実施例のビームによる句ｇ熱処理
方法を適用した超電導パターンの形成方法を示す工程の
ブロック図である。FIG. 1 is a block diagram of steps showing a method for forming a superconducting pattern using a beam heat treatment method according to an embodiment of the present invention.
第１図１ａｌ〜１（１１は各工程を示す。４２図はこの
発明の一実施例に係わる超電導パターンの形成方法ケ示
す概念図である。図において、１！）はレーザビーム又
は電子ビームで、この場合は例えば商尖頭値で班パルス
のＴＥＡ−Ｃｏ、レーザのようなレーザビーム、（２）
はレーザビーム（１１に照射して加熱する被熱処理材で
、この場合は酸ｇ歌が不光分で超電導特性を示さないイ
ットリウム・バリウム・銅酸化物の基材である。（３１
は被熱処理材１２）へ照射するビームＩｌ＋を部分的に
通す、例えばビーム…を通で部分と通さない部分とで形
成した所望のパターンのマスクである。（４１は酸素ガ
スを励起・解離し、酸素又はオゾンを生成する２ ４２
ｎｍ 以下の波長のシート状レーザビームで、この場
合は１９８ｎｍの波長のＡｒＦエキシマレーザを用いた
。1al to 1 (11 indicates each step. FIG. 42 is a conceptual diagram showing a method for forming a superconducting pattern according to an embodiment of the present invention. In the figure, 1!) is a laser beam or an electron beam. , in this case, for example, a laser beam such as a TEA-Co laser with a square pulse at a quotient peak value, (2)
is the material to be heat treated by irradiating it with a laser beam (11). In this case, the acid is a base material of yttrium, barium, and copper oxide that is opaque and does not exhibit superconducting properties. (31
is a mask with a desired pattern that partially allows the beam Il+ to be irradiated onto the material to be heat treated 12) to pass through, for example, a mask having a desired pattern formed by a portion through which the beam passes and a portion through which it does not pass. (41 excites and dissociates oxygen gas to generate oxygen or ozone2 42
A sheet-shaped laser beam with a wavelength of less than nm 2 was used, in this case an ArF excimer laser with a wavelength of 198 nm.
＋５１は被熱処理材１２）に酸素ガスを供給するノズル
である。点模様（１０１ばｖＪ起・解離した・宴素又は
オゾンの存在する雰囲気である。+51 is a nozzle that supplies oxygen gas to the material to be heat treated 12). Dot pattern (101) An atmosphere in which ozone or dissociated elements or ozone is present.
まず、被パターン形成物となる被熱処理材１２）を形成
しくａｌ、その上方に所望のパターンのマスク１３１を
配置する（ｂ＋。次に被熱処理材１２）上にノズル＋５
１より酸素ガスを送給し、そこｌｃ１９８ｎｍの波長の
ＡｒＦエキシマレーザのシート状ビーム１４）伊あてて
酸素を励起・解離させて、被熱処理材（２）上に励起・
解離させた酸素雰囲気と形成する（Ｃ７゜一部オゾンと
なってオゾンを含んだ雰囲気である。ここにマスク・３
１ヲ通過した短パルスのＴＩｃＡ−Ｃｏ、Ｌ／−ザビー
ム１１１を照射−ｍ熱しくｄ＋％酸素をドープさせなが
らマスクのパターンの形状に局部的に熱処理を楕す。熱
処理？楕されたパターン部分は超電導特性倉示し、酸素
が注入されてイットリウム・バリウム・銅酸化物超電導
膜が生成していることが確認された。このようにこの実
施例でｋｉ被熱処理材ＫＩＲ素を添加して超電導特性を
示す組成°構造にして超電導パターンを形成できる。さ
らに、ビーム全パルス照射することで所望のパターンの
みを安定かつ精度よ〈熱処理でき、所望のパターンを安
定かつ嘴度よく形成できる。なお、励起・解離した酸素
原子又はオゾンを用いているので、従来よりも短時間あ
るいＦｉ低温で所望の頓電導パターン？形成できる。First, a material to be heat treated 12) which is to be patterned is formed, and a mask 131 with a desired pattern is placed above it (b+.Next, a nozzle +5 is placed on the material to be heat treated 12).
Oxygen gas is supplied from 1, and a sheet-shaped beam of an ArF excimer laser with a wavelength of 198 nm is applied thereto to excite and dissociate oxygen, and excite and dissociate it onto the material to be heat treated (2).
Forms an atmosphere of dissociated oxygen (C7゜ Part of it becomes ozone, creating an atmosphere containing ozone.Here, mask 3
A short pulse of TIcA-Co, which has passed through step 1, is irradiated with the L/-the beam 111, and heat treatment is applied locally to the shape of the mask pattern while hot doping with d+% oxygen. Heat treatment? The oval pattern part showed superconducting properties, and it was confirmed that oxygen was injected to form a yttrium-barium-copper oxide superconducting film. As described above, in this embodiment, a superconducting pattern can be formed by adding a KIR element to the material to be heat-treated and forming a composition structure exhibiting superconducting properties. Furthermore, by irradiating the entire beam pulse, only the desired pattern can be heat-treated stably and precisely, and the desired pattern can be formed stably and with good beak. In addition, since excited and dissociated oxygen atoms or ozone are used, the desired instant conduction pattern can be achieved in a shorter time or at a lower Fi temperature than conventional methods. Can be formed.
ここで、酸車ガスを励起・解＠するために２４２ｎｍ
以下の波長のレーザビーム？用いたのは、酸素ガスの吸
収波長端が２４ｇｎｍで酸素０！の結合エネルギーは５
θＶで、波長で評価すると２４４ｎｍであるので、
２４１ｎｍ以下の波長のビームであれば酸素を解離させ
ることができるからである。ただし、解離効率から考え
れば酸素への吸収率が最大の１４０ｎｍに近い波長の方
が良い。Here, in order to excite and decompose the acid wheel gas, 242 nm
Laser beam with the following wavelength? The absorption wavelength edge of the oxygen gas used was 24 gnm, and there was no oxygen! The binding energy of is 5
θV is 244 nm when evaluated in terms of wavelength, so
This is because a beam having a wavelength of 241 nm or less can dissociate oxygen. However, in terms of dissociation efficiency, a wavelength close to 140 nm, where the absorption rate for oxygen is maximum, is better.
なお、上記実施例では、所望のパターンのマスク（３１
を被照射材の上方に配置した場合について示したが、所
望のパターンのマスク１３１を被照射材である被熱処理
材（２）の表面におき、その上にビームを照射するよう
にして被熱処理材（２）を熱処理しＰｆｒ望のパターン
を形成してもよい。また、集光系を用いてマスクのパタ
ーンを通過したレーザビーム＋１＋ １を光学的に拡大
又は縮小して結像させ、部分的に照射してマスク１３１
のパターンと相似の所望のパターンを形成させてもよい
。In addition, in the above embodiment, a mask (31
The case where the mask 131 with the desired pattern is placed above the material to be irradiated is placed on the surface of the material to be heat treated (2), which is the material to be irradiated, and the beam is irradiated onto the mask 131 to perform the heat treatment. The material (2) may be heat treated to form a desired pattern. In addition, the laser beam +1+1 that has passed through the pattern of the mask is optically expanded or contracted using a condensing system to form an image, and is partially irradiated to form an image on the mask 131.
A desired pattern similar to the pattern may be formed.
さらに、ビーム…を被熱処理材ｆ２）に対して相対的に
格納きせ被熱処理材の所定部分を照射して所定のパター
ン部分成するようにしてもよい。Furthermore, a predetermined pattern may be formed by irradiating a predetermined portion of the stored heat-treated material with the beam relative to the heat-treated material f2).
ま次、酸素ガスの代わりに、励起・解離した酸素原子を
生成できるガスであれば、例えばＮ、Ｏ，Ｎｏ、などで
あっても良い。なお、 ＮｔＯの場合はＮ、Ｏの吸収
波長端が２４０ ｎｍ、結合エネルギは波長で評価する
と７１６ｎｍ であるので２４０ｎｍ以下の波長のビ
ームｉＮｏ、の場合１ｊＮｏ、の吸収波長端が３９８ｎ
ｍ、結合エネルギは波長で以下のＡｒ１１！エキシマレ
ーザに限らすＫｒ０ｌエキシマレーザや他のレーザビー
ムが用いられる。Next, instead of oxygen gas, any gas such as N, O, No, etc. may be used as long as it can generate excited and dissociated oxygen atoms. In the case of NtO, the absorption wavelength edge of N and O is 240 nm, and the coupling energy is 716 nm when evaluated in terms of wavelength, so the absorption wavelength edge of the beam iNo, in the case of 1jNo, with a wavelength of 240 nm or less is 398 nm.
m, the binding energy is the following Ar11 in wavelength! Excimer lasers are used, such as Kr0l excimer lasers and other laser beams.
また所定波長以下の波長帯の′Ｊｔ線ケ出す水銀ランプ
などを用いてもよい。さらにＲＦ’プラズマを用いて酸
素を解離しても良く、オゾナイザで生成したオゾンを供
給するようにしても良い。Alternatively, a mercury lamp or the like which emits 'Jt rays in a wavelength band below a predetermined wavelength may be used. Furthermore, RF' plasma may be used to dissociate oxygen, or ozone generated by an ozonizer may be supplied.
さらにまた、被熱処理材に励起・解離した酸素又はオゾ
ンを吹き付けるように供給してその雰囲気を形成する代
わりに、励起・解離した酸素又はオゾンを封入した容器
内に被熱処理材を収容するようにしても良い。Furthermore, instead of blowing excited and dissociated oxygen or ozone onto the material to be heat-treated to form the atmosphere, the material to be heat-treated is housed in a container filled with excited and dissociated oxygen or ozone. It's okay.
さらに、上記実施例では被熱処理材として酸素歌が不充
分で超電導特性を示さないイットリウム・バリウム・＠
酸化物の基材分水したが、基板に生成されたその酔化物
被膜であっても、他の同様の理由で超を導性を示さない
酸化物であっても同様の効果を奏する。また、酸化物で
なくとも例えばシリコンを被照射材として用い、シリコ
ン酸化膜全形成する場合に適用しても同様の効果を奏す
る。Furthermore, in the above embodiments, yttrium, barium, etc., which do not exhibit superconducting properties due to insufficient oxygen concentration as the heat-treated materials.
Even if the oxide base material is dehydrated, the same effect can be achieved even if it is an anesthetized film formed on the substrate or an oxide that does not exhibit superconductivity for other similar reasons. Furthermore, even if silicon, for example, is used as the irradiated material instead of an oxide, the same effect can be obtained even when the entire silicon oxide film is formed.
以上のように、この発明によれば、励起・解離した酸素
又はオゾンの存在する雰囲気を形成する工程、及び上記
雰囲気で被熱処理材の所定部分にレーザビーム又は電子
ビームを照射・加熱して、上記ビームが照射された上記
所定部分に酸素を添加する工程を施すことにより、簡便
に制御性良く所定部分のみに酸素を添加でき例えば所望
の超電導パターンが簡便かつ安定に得られる効果がある
。As described above, according to the present invention, a step of forming an atmosphere containing excited and dissociated oxygen or ozone, and irradiating and heating a predetermined portion of a material to be heat treated with a laser beam or an electron beam in the atmosphere, By performing the step of adding oxygen to the predetermined portion irradiated with the beam, oxygen can be easily added only to the predetermined portion with good controllability, and for example, a desired superconducting pattern can be easily and stably obtained.
第１図はこの発明の一実施例によるビームｒ用いた超電
導パターンの形成方法を示す工程のブロック図、第２図
は発明の一実施例に係わる超電導パターンの形成方法ケ
示す概念図である。
また％第３図は従来の餡電導材の形成方法の工程を示す
ブロック図、第４図は従来の超！４材の形成方法による
沼電導パターンの形成方法を示す工程図である。
図において、（１１はレーザビーム、（２）は被熱処理
材、（３１はマスク、（１０）は励起・解離した酸素又
はオゾンの存在する雰囲気である。
なお、６図中、同一符号は１同−又は相当部分を示す。FIG. 1 is a block diagram of steps showing a method for forming a superconducting pattern using a beam r according to an embodiment of the invention, and FIG. 2 is a conceptual diagram showing a method for forming a superconducting pattern according to an embodiment of the invention. Also, Figure 3 is a block diagram showing the steps of the conventional method of forming a bean paste conductive material, and Figure 4 is a block diagram showing the steps of the conventional method of forming an electrically conductive material. It is a process diagram which shows the formation method of the marsh conductive pattern by the formation method of four materials. In the figure, (11 is a laser beam, (2) is a material to be heat treated, (31 is a mask, and (10) is an atmosphere in which excited and dissociated oxygen or ozone exists. In addition, in Figure 6, the same reference numeral is 1. Indicates the same or equivalent part.
Claims (9)
を形成する工程、及び上記雰囲気で被熱処理材の所定部
分にレーザビーム又は電子ビームを照射・加熱して、上
記ビームが照射された上記所定部分に酸素を添加する工
程を施すビームを用いた局部熱処理方法。(1) A step of forming an atmosphere in which excited and dissociated oxygen or ozone exists, and irradiating and heating a predetermined portion of the material to be heat treated with a laser beam or an electron beam in the above atmosphere, and heating the predetermined portion irradiated with the beam. A local heat treatment method using a beam that adds oxygen to the area.
を形成する工程と酸素を添加する工程は同時に施される
特許請求の範囲第１項記載のビームを用いた局部熱処理
方法。(2) A local heat treatment method using a beam according to claim 1, wherein the step of forming an atmosphere containing excited and dissociated oxygen or ozone and the step of adding oxygen are performed simultaneously.
の基材、または基板上に形成された上記酸化物の被膜で
ある特許請求の範囲第１項または第２項記載のビームを
用いた局部熱処理方法。(3) The material to be heat treated is a base material of yttrium/barium/copper oxide, or a film of the above oxide formed on a substrate. Heat treatment method.
又は水銀ランプの光線をあてて、励起・解離した酸素又
はオゾンの存在する雰囲気を形成する特許請求の範囲第
１項ないし第３項のいずれかに記載のビームを用いた局
部熱処理方法。(4) Any one of claims 1 to 3, in which an atmosphere containing excited and dissociated oxygen or ozone is formed by exposing oxygen molecules to a laser beam with a wavelength of 242 nm or less or a light beam from a mercury lamp. A local heat treatment method using a beam described in .
した酸素又はオゾンの存在する雰囲気を形成する特許請
求の範囲第１項ないし第３項のいずれかに記載のビーム
を用いた局部熱処理方法。(5) Local heat treatment using the beam according to any one of claims 1 to 3, which dissociates oxygen using RF plasma and forms an atmosphere containing excited and dissociated oxygen or ozone. Method.
の存在する雰囲気を形成する特許請求の範囲第１項ない
第３項のいずれかに記載のビームを用いた局部熱処理方
法。(6) A local heat treatment method using a beam according to any one of claims 1 to 3, wherein ozone generated by an ozonizer is supplied to form an atmosphere in which ozone exists.
るか、又は上記被熱処理材表面にマスクを置いて、上記
被熱処理材の上記所定部分にレーザビーム又は電子ビー
ムを照射・加熱するようにした特許請求の範囲第１項な
いし第６項のいずれかに記載のビームを用いた局部熱処
理方法。(7) Masking the surface of the material to be heat treated except for a predetermined portion, or placing a mask on the surface of the material to be heat treated, and irradiating and heating the predetermined portion of the material to be heat treated with a laser beam or an electron beam. A local heat treatment method using a beam according to any one of claims 1 to 6.
て相対的に移動させて上記被熱処理材の所定部分に上記
レーザビーム又は電子ビームを照射・加熱するようにし
た特許請求の範囲第１項ないし第６項のいずれかに記載
のビームを用いた局部熱処理方法。(8) Claim 1, wherein the laser beam or electron beam is moved relative to the material to be heat treated to irradiate and heat a predetermined portion of the material to be heat treated with the laser beam or electron beam. A local heat treatment method using the beam according to any one of items 1 to 6.
ームをパルス照射して加熱するようにした特許請求の範
囲第１ないし第８項のいずれかに記載のビームを用いた
局部熱処理方法。(9) A local heat treatment method using a beam according to any one of claims 1 to 8, wherein a predetermined portion of a material to be heat treated is heated by irradiating pulses of a laser beam or an electron beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62317917A JPH01160888A (en) | 1987-12-15 | 1987-12-15 | Local heat-treatment using beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62317917A JPH01160888A (en) | 1987-12-15 | 1987-12-15 | Local heat-treatment using beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01160888A true JPH01160888A (en) | 1989-06-23 |
Family
ID=18093488
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62317917A Pending JPH01160888A (en) | 1987-12-15 | 1987-12-15 | Local heat-treatment using beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01160888A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271905A (en) * | 1989-04-11 | 1990-11-06 | Matsushita Electric Ind Co Ltd | Method for annealing oxide superconducting thin film |
| JPH02271913A (en) * | 1989-04-11 | 1990-11-06 | Matsushita Electric Ind Co Ltd | Method for annealing thin film type superconductor |
| JPH04226089A (en) * | 1990-04-27 | 1992-08-14 | Samsung Electro Mech Co Ltd | Manufacture of superconductive integrated circuit element |
-
1987
- 1987-12-15 JP JP62317917A patent/JPH01160888A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02271905A (en) * | 1989-04-11 | 1990-11-06 | Matsushita Electric Ind Co Ltd | Method for annealing oxide superconducting thin film |
| JPH02271913A (en) * | 1989-04-11 | 1990-11-06 | Matsushita Electric Ind Co Ltd | Method for annealing thin film type superconductor |
| JPH04226089A (en) * | 1990-04-27 | 1992-08-14 | Samsung Electro Mech Co Ltd | Manufacture of superconductive integrated circuit element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Ghislotti et al. | Effect of different preparation conditions on light emission from silicon implanted SiO2 layers | |
| Rakov et al. | Strong photoluminescence and cathodoluminescence due to f–f transitions in Eu 3+ doped Al 2 O 3 powders prepared by direct combustion synthesis and thin films deposited by laser ablation | |
| JPH01222488A (en) | Method of forming patterned layer of high tc oxide superconductor | |
| JP3190653B2 (en) | Annealing method and annealing device | |
| JPS5679449A (en) | Production of semiconductor device | |
| JPH01160888A (en) | Local heat-treatment using beam | |
| JPH01164781A (en) | Local heat treatment with beam | |
| TW209911B (en) | ||
| JPH03266424A (en) | Annealing process of semiconductor substrate | |
| EP0806982B1 (en) | Isotope separation | |
| Ohtsubo et al. | Removal of oxygen atoms from a SiO 2 surface by incoherent vacuum ultraviolet excimer irradiation | |
| JP4955265B2 (en) | Method and apparatus for manufacturing semiconductor device | |
| Lewis et al. | Laser-induced fluorescence in N2 and N+ 2 by multiple-photon excitation at 266 nm | |
| JP2003142469A (en) | Method and apparatus for radical oxidation of silicon | |
| Williams et al. | Physisorbed template for spatial patterning of adsorbates | |
| JPS63273371A (en) | Manufacture of superconducting electric circuit | |
| JP2564600B2 (en) | Processing method of oxide superconductor | |
| JPH0376129A (en) | Manufacture of electronic device using boron nitride | |
| JPH07169743A (en) | Surface treating method | |
| JPH02278720A (en) | Plasma doping apparatus | |
| JP3125004B2 (en) | Substrate surface processing method | |
| JP3432013B2 (en) | Method of forming oxide film | |
| JPS6428225A (en) | Production of superconducting material | |
| JPH02139810A (en) | Manufacture of superconductor | |
| JP2865122B2 (en) | Superconductor manufacturing method |