JPH02139810A - Manufacture of superconductor - Google Patents
Manufacture of superconductorInfo
- Publication number
- JPH02139810A JPH02139810A JP63293824A JP29382488A JPH02139810A JP H02139810 A JPH02139810 A JP H02139810A JP 63293824 A JP63293824 A JP 63293824A JP 29382488 A JP29382488 A JP 29382488A JP H02139810 A JPH02139810 A JP H02139810A
- Authority
- JP
- Japan
- Prior art keywords
- oxygen
- gas
- heat treatment
- light
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002887 superconductor Substances 0.000 title abstract description 7
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 25
- 239000001301 oxygen Substances 0.000 claims abstract description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000007789 gas Substances 0.000 claims abstract description 21
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 230000001678 irradiating effect Effects 0.000 claims abstract description 7
- 239000011224 oxide ceramic Substances 0.000 claims abstract description 5
- 229910052574 oxide ceramic Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 22
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BTGZYWWSOPEHMM-UHFFFAOYSA-N [O].[Cu].[Y].[Ba] Chemical compound [O].[Cu].[Y].[Ba] BTGZYWWSOPEHMM-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000006213 oxygenation reaction Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- -1 styronium Chemical compound 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductors And Manufacturing Methods Therefor (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、主に超電導材料を基板上に配し、電気回路も
しくは電子回路を構成するために用いる超電導膜の製造
方法に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention mainly relates to a method of manufacturing a superconducting film, which is used to construct an electric circuit or an electronic circuit, by disposing a superconducting material on a substrate.
従来の技術
従来、高温超電導体は、例えば酸化イツトリウム、炭酸
バリウム、酸化銅等の粉末を調合し、固形にプレス形成
した後、900″C以上の高温で焼成すると液体窒素温
度以上の比較的高い温度で超電導状態になることが発見
されて以来、この物質を基板上に膜形成し回路基板とし
て幅広く応用が期待されている。Conventional technology Conventionally, high-temperature superconductors have been produced by mixing powders of, for example, yttrium oxide, barium carbonate, copper oxide, etc., press-forming them into a solid, and then firing them at a high temperature of 900"C or higher. Ever since it was discovered that this material becomes superconducting at high temperatures, it has been expected to be used in a wide range of applications as circuit boards by forming films on substrates.
発明が解決しようとする課題
しかしながら、この様な従来の技術では、これらの高温
超電導体を電気もしくは電子回路の配線のための例えば
プリント基板等に応用するとしたら、前記した超電導体
を配線パターンの形状に加工した後、やはり同様に90
0 ’C以上の高温で熱処理をしなければならない。そ
れには高温の熱処理に耐えることのできる基板を用いな
ければならない。しかも高温超電導体として機能するた
めには、たとえば、結晶性の良いYBCuO膜(イツト
リウム−バリウム−銅−酸素膜)が形成されなければな
らないので基板は必然的に、サファイア、t4i結晶シ
リコン、ガリウムヒ素等の高価な基板を使用する必要が
あった。この問題を解決しようとし、酸素ガスの減圧雰
囲気で酸素ガスに電界を印可し、プラスマ状態中で熱処
理することによって酸化を充分行うことによって熱処理
の低温化の試みがみられる。しかしながら、このような
方法では、膜の熱処理は大気圧もしくは減圧下で行われ
ていたため、−旦酸化したものが高温下において再び酸
素を放出してしまい、部分的に酸素が充分結合していな
い状態の部分ができてしまい、結果的に臨界電流や転移
温度が向上していなっかたり、向上していても効果が小
さかったり、さらにはその効果に持続性がなうかたりし
ていた
本発明は、この様な問題点を解決することを目的として
いる。Problems to be Solved by the Invention However, with these conventional techniques, if these high-temperature superconductors are to be applied to, for example, printed circuit boards for the wiring of electric or electronic circuits, it is difficult to adjust the shape of the wiring pattern by using the above-mentioned superconductors. After processing, the same 90
Heat treatment must be performed at a high temperature of 0'C or higher. For this purpose, a substrate must be used that can withstand high-temperature heat treatment. Moreover, in order to function as a high-temperature superconductor, for example, a YBCuO film (yttrium-barium-copper-oxygen film) with good crystallinity must be formed, so the substrate must necessarily be sapphire, T4i crystal silicon, or gallium arsenide. It was necessary to use expensive substrates such as In an attempt to solve this problem, attempts have been made to lower the temperature of the heat treatment by applying an electric field to oxygen gas in a reduced pressure atmosphere of oxygen gas and performing heat treatment in a plasma state to sufficiently oxidize. However, in this method, the heat treatment of the film is carried out at atmospheric pressure or reduced pressure, so that the oxidized material releases oxygen again at high temperatures, and oxygen is not fully bonded in some parts. In the present invention, as a result, the critical current and transition temperature were not improved, or even if they were improved, the effect was small, or even the effect was not sustainable. aims to solve such problems.
課題を解決するための手段
本発明では、上記問題点を解決するため従来は超電導体
を焼成するため、加熱炉で900℃で全体を加熱してい
たものを酸素を含むガスの雰囲気中でしかもそのガス雰
囲気を大気圧以上に加圧し、さらに非常に短波長で強力
な光を照射することによって良質な超電導複合酸化物結
晶膜比較的低温の熱処理で作製可能とする技術を提供す
るものである。Means for Solving the Problems In the present invention, in order to solve the above-mentioned problems, superconductors, which were conventionally heated as a whole at 900°C in a heating furnace, are heated in an oxygen-containing gas atmosphere. By pressurizing the gas atmosphere to above atmospheric pressure and irradiating it with intense light with a very short wavelength, we provide a technology that enables the production of high-quality superconducting composite oxide crystal films through heat treatment at relatively low temperatures. .
作用
上記した手段を用いることによって生ずる本発明の作用
は次のようなものである。Effects The effects of the present invention produced by using the above-mentioned means are as follows.
第一に従来の方法では、膜の熱処理は大気圧もしくは減
圧下で行われていたため、−旦酸化したものが高温下に
おいて再び酸素を放出してしまい、部分的に酸素が充分
結合していない状態の部分ができてしまい、結果的に臨
界電流や転移温度が向上していなうかたり、向上してい
ても効果が小さかったり、さらにはその効果に持続性が
なっかたりしていたものを、本発明では上記した酸素の
再放出をなくす雰囲気において酸素化する効果効果であ
る。第二に、その状態ではラジカル状態となった酸素原
子もしくは酸素分子を生成することにより、ラジカルと
酸素分子が再び衝突い 個々に持つ励起エネルギーは小
さいが犬R1にラジカルと化するため、必要な加熱を行
うことにより、充分な酸化を行うことができる効果であ
る。第三に、酸素を含むガスの圧力を高くすることによ
って、ガスに照射される光がガスに効率よく吸収され、
酸素ラジカルの発生が多くなりやはり充分な酸化を行う
ことができる効果がある。First, in the conventional method, the heat treatment of the film was carried out at atmospheric pressure or reduced pressure, so the oxidized material releases oxygen again at high temperatures, and oxygen is not fully bonded in some parts. As a result, the critical current and transition temperature were not improved, or even if they were improved, the effect was small, or the effect was not sustainable. In the present invention, this is an effect of oxygenation in an atmosphere that eliminates the above-mentioned re-release of oxygen. Second, in that state, by generating oxygen atoms or oxygen molecules that are in a radical state, the radicals and oxygen molecules collide again, and although the excitation energy they each have is small, they turn into radicals in R1, so the necessary The effect is that sufficient oxidation can be performed by heating. Thirdly, by increasing the pressure of the oxygen-containing gas, the light irradiated onto the gas is efficiently absorbed by the gas.
This has the effect of increasing the generation of oxygen radicals and ensuring sufficient oxidation.
実施例
以下図面に基づき、本発明の代表的な実施例を示す。第
1図は本発明を実施するための、紫外光を照射し熱処理
を行うための装置概略図である。EXAMPLES Below, typical examples of the present invention will be shown based on the drawings. FIG. 1 is a schematic diagram of an apparatus for irradiating ultraviolet light and performing heat treatment to carry out the present invention.
11が充分空気を遮断し得る容器であり、12がN20
,02等の酸素を含むガスの導入口、13がそれらのガ
スの排出口で、必要に応じポンプで排気するが、光照射
を行い熱処理を行う際には、少なくとも大気圧よりも高
い圧力とする。14が紫外光9を発生する光源で例えば
エキシマレーザ−光源等を使用する。】5が光導入窓で
ある。16が例えばYBCO等の複合酸化物セラミック
スを塗布した基数であり、15の窓を通じ光源14から
基板表面へ紫外光2が照射される。この時紫外光Ωは基
板のごく表面を加熱すると共に途中N 20を分解し酸
素のラジカルを発生させ、膜表面を活性な酸化雰囲気に
するのである。 第2図が本発明によって形成された、
超電導膜20である。21が基板で、22が光照射によ
って加熱処理された部分であり、23は光が侵入せず加
熱処理が成されていない部分である。 このことにより
熱処理の温度そのものは、従来の800〜900 ’C
から400〜700″Cに下げることができた。11 is a container that can sufficiently block air, and 12 is a container with N20
, 02, etc. are the inlet ports for oxygen-containing gases, and 13 are the outlet ports for these gases, which are evacuated with a pump if necessary. do. 14 is a light source that generates ultraviolet light 9, for example, an excimer laser light source or the like is used. ] 5 is a light introduction window. 16 is a base coated with a composite oxide ceramic such as YBCO, and ultraviolet light 2 is irradiated from the light source 14 to the substrate surface through the window 15. At this time, the ultraviolet light Ω heats the very surface of the substrate, decomposes N 20 on the way, generates oxygen radicals, and creates an active oxidizing atmosphere on the film surface. FIG. 2 is formed according to the present invention.
This is a superconducting film 20. 21 is a substrate, 22 is a portion that has been heat-treated by light irradiation, and 23 is a portion that is not exposed to light and has not been heat-treated. As a result, the heat treatment temperature itself is lower than the conventional 800-900'C.
We were able to lower the temperature from 400 to 700″C.
なお、本実施例ではイツトリウム、バリウム、銅の複合
酸化物の例について説明したが、イツトリウムの代わり
にエルビウム(Er)を用いたものや、ランタン、スト
ロンチウム、銅の複合酸化物を用いた場合、さらにはビ
スマス、ストロンチウム、カルシュラム、銅の複合酸化
物やタリュウム、スチロンシュウム、カルシュラム、銅
の複合酸化物にも有効であるのは言うまでもない。In this example, an example of a composite oxide of yttrium, barium, and copper was explained, but when erbium (Er) is used instead of yttrium, or a composite oxide of lanthanum, strontium, and copper is used, Furthermore, it goes without saying that it is also effective for complex oxides of bismuth, strontium, calcium, and copper, as well as complex oxides of thallium, styronium, calcium, and copper.
発明の効果 本発明の効果は次のようなものである。Effect of the invention The effects of the present invention are as follows.
先ず第一に、加熱処理が膜全体に800〜900°Cの
高温で行われていたものを本発明ではごく表面だけ加熱
されるが、全体の熱処理雰囲気は400〜700℃に下
げることができたため、基板として比較的安価なガラス
等の基板を用いることが出来る。First of all, whereas heat treatment was performed on the entire film at a high temperature of 800 to 900°C, in the present invention, only a very small surface is heated, but the entire heat treatment atmosphere can be lowered to 400 to 700°C. Therefore, a relatively inexpensive substrate such as glass can be used as the substrate.
第二の効果として、従来法では熱処理中に酸化物中の酸
素が失われるのを防ぐために、02雰囲気中で熱処理を
行っていたが、この加熱では02は活性な状態に分解し
てはいす、酸素の欠乏状態を補うことが出来ず、どうし
ても結晶性が悪かったものを、この酸素を含むガスに紫
外光を照射することによって、活性な酸素ラジカル中で
ごく表面を加熱するので、酸素欠乏のない熱処理が行え
結晶性に優れた超電導セラミックス膜を得ることが出来
、プリント基板や超電導素子への応用にも非常にイ2丁
益である。The second effect is that in the conventional method, heat treatment was performed in an 02 atmosphere to prevent the loss of oxygen in the oxide during heat treatment, but in this heating, 02 is decomposed into an active state. By irradiating this oxygen-containing gas with ultraviolet light, the very surface of the oxygen-containing gas is heated in the active oxygen radicals, so that the oxygen-deficient state can be improved. It is possible to obtain a superconducting ceramic film with excellent crystallinity through heat treatment without heat treatment, and it is extremely useful for application to printed circuit boards and superconducting elements.
第1図は本発明を実施するための紫外光を酸素を含む雰
囲気中で照射するための装置概略図、第2図は本発明に
よって実現された超電導膜の一例の構成断面図である。
11・・・装置容器、12・・・ガス導入口、13・・
・ガス排出口、14・・・紫外光光源、15・・・光導
入窓、16・・・基板、21・・・基板、22・・・加
熱処理された複合酸化物、セラミックス膜、23・・・
加熱処理されていない複合酸化物セラミックス膜。FIG. 1 is a schematic diagram of an apparatus for irradiating ultraviolet light in an oxygen-containing atmosphere to carry out the present invention, and FIG. 2 is a cross-sectional view of the structure of an example of a superconducting film realized by the present invention. 11...Device container, 12...Gas inlet, 13...
- Gas exhaust port, 14... Ultraviolet light source, 15... Light introduction window, 16... Substrate, 21... Substrate, 22... Heat-treated composite oxide, ceramic film, 23...・・・
Composite oxide ceramic membrane that is not heat treated.
Claims (4)
を含むガス雰囲気中で少なくとも酸素を含むガスが吸収
分解励起できる波長光を含む光を照射し処理を行う際に
、酸素を含む雰囲気ガスの圧力を少なくとも大気圧より
高くするすることを特徴とする超電導膜の製造方法。(1) When processing the layer coated with the composite oxide ceramic layer by irradiating it with light containing a wavelength that can absorb and decompose and excite at least oxygen-containing gas in an oxygen-containing gas atmosphere, an oxygen-containing atmospheric gas A method for producing a superconducting film, the method comprising: increasing the pressure of the film to at least higher than atmospheric pressure.
くは、それらの混合ガスを用いることを特徴とする特許
請求の範囲第1項記載の超電導膜の製造方法。(2) The method for manufacturing a superconducting film according to claim 1, characterized in that N_2O, O_2 gas, or a mixed gas thereof is used as the oxygen-containing gas.
と特徴とする特許請求の範囲第1項記載の超電導膜の製
造方法。(3) The method for producing a superconducting film according to claim 1, characterized in that an excimer laser is used as the ultraviolet light source.
も照射することを特徴とする特許請求の範囲第1項記載
の超電導膜の製造方法。(4) The method for producing a superconducting film according to claim 1, characterized in that visible or infrared light is also irradiated at the same time as the ultraviolet light is irradiated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63293824A JPH02139810A (en) | 1988-11-21 | 1988-11-21 | Manufacture of superconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63293824A JPH02139810A (en) | 1988-11-21 | 1988-11-21 | Manufacture of superconductor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02139810A true JPH02139810A (en) | 1990-05-29 |
Family
ID=17799632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63293824A Pending JPH02139810A (en) | 1988-11-21 | 1988-11-21 | Manufacture of superconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02139810A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0983829A1 (en) * | 1997-08-28 | 2000-03-08 | Heinrich Kuper Gmbh & Co Kg | Method and apparatus for gluing strips of veneer |
-
1988
- 1988-11-21 JP JP63293824A patent/JPH02139810A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0983829A1 (en) * | 1997-08-28 | 2000-03-08 | Heinrich Kuper Gmbh & Co Kg | Method and apparatus for gluing strips of veneer |
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