JPH02278720A - Plasma doping apparatus - Google Patents

Plasma doping apparatus

Info

Publication number
JPH02278720A
JPH02278720A JP9872889A JP9872889A JPH02278720A JP H02278720 A JPH02278720 A JP H02278720A JP 9872889 A JP9872889 A JP 9872889A JP 9872889 A JP9872889 A JP 9872889A JP H02278720 A JPH02278720 A JP H02278720A
Authority
JP
Japan
Prior art keywords
temperature
lamp
plasma
impurity
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9872889A
Other languages
Japanese (ja)
Inventor
Hiroyuki Okada
Kazuo Fujiwara
Original Assignee
Matsushita Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electron Corp filed Critical Matsushita Electron Corp
Priority to JP9872889A priority Critical patent/JPH02278720A/en
Publication of JPH02278720A publication Critical patent/JPH02278720A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To suitably set a temperature and time and to obtain a desired diffusion depth and total impurity amount by providing means for heating a semiconductor substrate to 800 to 1000°C of temperature range during application of a plasma in an apparatus for introducing an impurity to the substrate.
CONSTITUTION: A semiconductor substrate 5 is heated to a desired temperature in a range of 800 to 1000°C during application of a plasma by heating with a lamp 8 or a heater buried in a wafer holder 6, and an impurity diffusing depth specified by a temperature and high temperature applying time is obtained. The lamp 8 is so mounted at the top of the wafer 5 through a quartz window 9 as not to be brought into contact with a plasma to heat it. A reflecting plate 10 is mounted on the back of the lamp 8 to increase its heating efficiency. It may be heated to a high temperature by a heater instead of the lamp 8. Thus, an impurity layer can be formed in desired concentration of 1016-1020/cm3 and depth of 0.1-0.2μm with good controllability.
COPYRIGHT: (C)1990,JPO&Japio
JP9872889A 1989-04-20 1989-04-20 Plasma doping apparatus Pending JPH02278720A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9872889A JPH02278720A (en) 1989-04-20 1989-04-20 Plasma doping apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9872889A JPH02278720A (en) 1989-04-20 1989-04-20 Plasma doping apparatus

Publications (1)

Publication Number Publication Date
JPH02278720A true JPH02278720A (en) 1990-11-15

Family

ID=14227582

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9872889A Pending JPH02278720A (en) 1989-04-20 1989-04-20 Plasma doping apparatus

Country Status (1)

Country Link
JP (1) JPH02278720A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0628213A1 (en) * 1992-02-25 1994-12-14 Ag Associates, Inc. Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
US6403410B1 (en) 1999-05-14 2002-06-11 Canon Sales Co., Inc. Plasma doping system and plasma doping method
JP2018056529A (en) * 2016-09-30 2018-04-05 芝浦メカトロニクス株式会社 Substrate processing apparatus
US10088642B2 (en) 2016-11-09 2018-10-02 International Business Machines Corporation Coaxial wire and optical fiber trace via hybrid structures and methods to manufacture
US11018225B2 (en) 2016-06-28 2021-05-25 International Business Machines Corporation III-V extension by high temperature plasma doping

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0628213A1 (en) * 1992-02-25 1994-12-14 Ag Associates, Inc. Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
EP0628213A4 (en) * 1992-02-25 1997-02-19 Processing Technology Inc D B Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure.
US6403410B1 (en) 1999-05-14 2002-06-11 Canon Sales Co., Inc. Plasma doping system and plasma doping method
US11018225B2 (en) 2016-06-28 2021-05-25 International Business Machines Corporation III-V extension by high temperature plasma doping
JP2018056529A (en) * 2016-09-30 2018-04-05 芝浦メカトロニクス株式会社 Substrate processing apparatus
KR20180036585A (en) * 2016-09-30 2018-04-09 시바우라 메카트로닉스 가부시끼가이샤 Substrate treatment device
US10460961B2 (en) 2016-09-30 2019-10-29 Shibaura Mechatronics Corporation Substrate processing apparatus
CN107887300A (en) * 2016-09-30 2018-04-06 芝浦机械电子株式会社 Substrate board treatment
US10088642B2 (en) 2016-11-09 2018-10-02 International Business Machines Corporation Coaxial wire and optical fiber trace via hybrid structures and methods to manufacture
US10613283B2 (en) 2016-11-09 2020-04-07 International Business Machines Corporation Coaxial wire and optical fiber trace via hybrid structures and methods to manufacture
US11016255B2 (en) 2016-11-09 2021-05-25 International Business Machines Corporation Coaxial wire and optical fiber trace via hybrid structures and methods to manufacture
US11092763B2 (en) 2016-11-09 2021-08-17 International Business Machines Corporation Coaxial wire and optical fiber trace via hybrid structures and methods to manufacture

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