JPH01160860U - - Google Patents
Info
- Publication number
- JPH01160860U JPH01160860U JP4958988U JP4958988U JPH01160860U JP H01160860 U JPH01160860 U JP H01160860U JP 4958988 U JP4958988 U JP 4958988U JP 4958988 U JP4958988 U JP 4958988U JP H01160860 U JPH01160860 U JP H01160860U
- Authority
- JP
- Japan
- Prior art keywords
- cap
- substrate
- less
- thickness
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 2
- 238000007789 sealing Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000005394 sealing glass Substances 0.000 description 1
Landscapes
- Credit Cards Or The Like (AREA)
- Semiconductor Memories (AREA)
Description
第１図は本考案の断面図、第２図は斜視図であ
る。
１１……紫外線消去型半導体素子、１２，２２
……基板、１３……接着剤、１４，２４……リー
ド、１５，２５……封止ガラス、１６，２６……
キヤツプ。
FIG. 1 is a sectional view of the present invention, and FIG. 2 is a perspective view. 11... UV erasable semiconductor element, 12, 22
... Substrate, 13 ... Adhesive, 14, 24 ... Lead, 15, 25 ... Sealing glass, 16, 26 ...
Cap.
Claims (1)
板と前記半導体素子を覆うように前記基板に対し
て装着されたキヤツプと、前記基版と前記キヤツ
プとの間に挟持されて外部に延長し、且つ前記半
導体素子に電気的に接続されたリードとを具備す
る半導体装置において、前記基板は、厚さ０．７
mm以下で凹形状の不透光アルミナで形成され、前
記キヤツプは、厚さ０．５mm以下の透光アルミナ
で形成され、且つ前記リードが封止前に所望の形
状に整形され、全体厚が１．５mm以下であること
を特徴とする紫外線消去型半導体装置。 a substrate on which an ultraviolet erasable memory semiconductor element is mounted; a cap attached to the substrate so as to cover the semiconductor element; a cap that is held between the base plate and the cap and extends to the outside; In the semiconductor device including a lead electrically connected to an element, the substrate has a thickness of 0.7
The cap is made of translucent alumina with a concave shape of 0.5 mm or less, and the cap is made of translucent alumina with a thickness of 0.5 mm or less, and the leads are shaped into a desired shape before sealing, so that the overall thickness is An ultraviolet erasable semiconductor device characterized by having a diameter of 1.5 mm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4958988U JPH01160860U (en) | 1988-04-12 | 1988-04-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4958988U JPH01160860U (en) | 1988-04-12 | 1988-04-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01160860U true JPH01160860U (en) | 1989-11-08 |
Family
ID=31275679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4958988U Pending JPH01160860U (en) | 1988-04-12 | 1988-04-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01160860U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243410A (en) * | 1992-02-27 | 1993-09-21 | Nec Corp | Semiconductor device |
-
1988
- 1988-04-12 JP JP4958988U patent/JPH01160860U/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05243410A (en) * | 1992-02-27 | 1993-09-21 | Nec Corp | Semiconductor device |