JPH01160815A - Formation of carbon thin film by sputtering - Google Patents
Formation of carbon thin film by sputteringInfo
- Publication number
- JPH01160815A JPH01160815A JP62318407A JP31840787A JPH01160815A JP H01160815 A JPH01160815 A JP H01160815A JP 62318407 A JP62318407 A JP 62318407A JP 31840787 A JP31840787 A JP 31840787A JP H01160815 A JPH01160815 A JP H01160815A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- thin film
- carbon
- carbon thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 58
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 title claims abstract description 35
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 27
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052786 argon Inorganic materials 0.000 abstract description 10
- 239000010408 film Substances 0.000 abstract description 7
- 230000001681 protective effect Effects 0.000 abstract description 5
- 239000011261 inert gas Substances 0.000 abstract description 2
- 239000002245 particle Substances 0.000 description 22
- 238000010586 diagram Methods 0.000 description 4
- 238000001755 magnetron sputter deposition Methods 0.000 description 4
- 150000001721 carbon Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- -1 argon ions Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Physical Vapour Deposition (AREA)
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は例えば磁気記録媒体用のディスクを製造する様
な場合に適用されるカーボン薄膜のスパッタ形成方法に
関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for forming a carbon thin film by sputtering, which is applied, for example, to manufacturing disks for magnetic recording media.
（従来の技術）
一般に、磁気ディスク等を製造する際には磁気記録層の
下地層として或いは磁気記録層の保護膜として、薄膜状
のカーボン層を形成する手段が利用されている。(Prior Art) Generally, when manufacturing magnetic disks and the like, means for forming a thin carbon layer is used as an underlayer for a magnetic recording layer or as a protective film for a magnetic recording layer.
而して、従来ではこの種カーボン薄膜を形成するに際し
ては、例えば第３図の如きマグネトロンスパッタ装置を
用いて薄膜形成作業を行っていたのが実情であった。す
なわち、同図に示す手段はカーボン製の陰極ターゲラ）
３ｅに対面状態で基板６を設けて、スパッタリングによ
り飛散するターゲット原子を基板６の表面に堆積付着さ
せる手段である。Conventionally, when forming this type of carbon thin film, the actual situation was to use a magnetron sputtering apparatus as shown in FIG. 3, for example, to form the thin film. In other words, the means shown in the figure is a carbon cathode targeter)
In this method, a substrate 6 is provided facing the substrate 3e, and target atoms scattered by sputtering are deposited and attached to the surface of the substrate 6.
尚、当該手段ではカーボンの放電特性上、スパッタ装置
のチャンバー１ｅ内のスパッタガス圧を５Ｘ １０−
’Ｔｏｒｒ程度に設定せねばカーボンのスパッタリング
を適切に行うことができない。In addition, in this method, due to the discharge characteristics of carbon, the sputtering gas pressure in the chamber 1e of the sputtering apparatus is set to 5X 10-
Carbon sputtering cannot be performed properly unless it is set to approximately 'Torr.
（発明が解決しようとする問題点）
しかるに、従来のマグネトロンスパッタ装置を用いたス
パッタ作業では、基板表面に付着されるカーボン膜がタ
ーゲットのスパッタリング中に生じたプラズマに直接曙
されるために、当該手段によって得られるカーボン薄膜
には損傷痕が発生し、表面精度の優れた薄膜形成が行え
ないという難点を有していた。(Problems to be Solved by the Invention) However, in sputtering operations using conventional magnetron sputtering equipment, the carbon film attached to the substrate surface is directly exposed to the plasma generated during sputtering of the target. The carbon thin film obtained by this method has the disadvantage that damage marks occur and it is difficult to form a thin film with excellent surface precision.
また、本件発明者は上記従来の方法によって得られたカ
ーボン薄膜の構造を検査した処、該カーボン薄膜は基板
表面に均等な状態で密着しておらず、第４図の如くカー
ボン粒８が縦方向に分離した柱状構造を示すことを６ｆ
Ｌ’Ｑした。ところが、カーボン薄膜は当該柱状構造
の相互の結合力が弱（且つ基板に対する付着力も劣るも
ので、これがカーボン薄膜の性質を悪化させる他の要因
となっていたのである。Further, when the present inventor inspected the structure of the carbon thin film obtained by the above-mentioned conventional method, it was found that the carbon thin film did not adhere to the substrate surface in an even manner, and as shown in FIG. 6f indicates a columnar structure separated in the direction
L'Q. However, in carbon thin films, the columnar structures have weak mutual bonding strength (and poor adhesion to the substrate), which is another factor that deteriorates the properties of carbon thin films.
よって、従来のスパッタ手段によるカーボン薄膜は損傷
痕を具備するばかりか、基板への付着力や機械的強度に
も劣り、トライポロジー的にディスク等の保護膜として
は適さず、実用には不向きとなる問題点があった。この
様なカーボン薄膜ではディスク等へ適用した場合にフェ
ライトヘッド等との摩擦により容易に剥離や割れを生じ
、その実用面で難点を有していたのである。Therefore, carbon thin films produced by conventional sputtering methods not only have damage marks but also have poor adhesion to substrates and mechanical strength, making them tribologically unsuitable as protective films for disks, etc., making them unsuitable for practical use. There was a problem. When such a carbon thin film is applied to a disk or the like, it easily peels off or cracks due to friction with a ferrite head, etc., which poses a practical problem.
それ故、本発明は、磁気記録用ディスクの保護膜等とし
て充分に実用に供することが可能となるべく表面精度や
強度性に優れた適切なカーボン薄膜を簡易な手段で形成
させることを、その目的とする。Therefore, an object of the present invention is to form, by a simple means, an appropriate carbon thin film with excellent surface precision and strength so that it can be put to practical use as a protective film for magnetic recording disks, etc. shall be.
（問題点を解決するための手段）
本発明は、先ず第１に、基板表面に形成されるカーボン
薄膜が直接プラズマに曝されることを防止すべ（所謂対
向ターゲット式のスパッタ手段を採用したものである。(Means for Solving the Problems) The present invention firstly aims to prevent the carbon thin film formed on the substrate surface from being directly exposed to plasma (a sputtering method using a so-called facing target type sputtering means). It is.
また、第２に、本件発明者がこの種スパッタ作業による
カーボン薄膜形成を繰り返し実験した処、カーボン薄膜
の柱状構造化は、スパッタガス圧と大きく関連し、この
柱状構造化はスパッタガス圧が５ Ｘｌ０−３Ｔｏｒｒ
程度の比較的高圧の条件下でスパッタ作業を行った場合
にカーボン粒子のエネルギーの消失が激しく基板表面で
のカーボン粒子の移動度が小さくなることに起因して発
生することが解明できた。よって、本発明はカーボン薄
膜の柱状構造化を適正なスパッタガス圧の設定により解
消し、もって上記従来の問題点を解決せんとして構成さ
れたものである。Second, the inventor of the present invention has repeatedly experimented with carbon thin film formation by this type of sputtering operation, and found that the formation of a columnar structure in the carbon thin film is largely related to the sputtering gas pressure. Xl0-3Torr
It has been clarified that this occurs because when sputtering is performed under relatively high pressure conditions, the energy of carbon particles is rapidly lost and the mobility of carbon particles on the substrate surface is reduced. Therefore, the present invention is designed to eliminate the formation of a columnar structure in a carbon thin film by setting an appropriate sputtering gas pressure, thereby solving the above-mentioned conventional problems.
すなわち、本発明は、相互に対面させて配置したカーボ
ン製のターゲット３．３を、３．０ｍＴｏｒｒ以下のス
パッタガス圧中で陰極とすべく電圧を印加してスパッタ
リングさせて、前記ターゲット３゜３相互間の磁界空間
部４の側方に配置せしめた基板６の表面にカーボン薄膜
を形成させる、カーボン薄膜のスパッタ形成方法である
。That is, in the present invention, carbon targets 3.3 placed facing each other are sputtered by applying a voltage to serve as cathodes in a sputtering gas pressure of 3.0 mTorr or less. This is a sputtering method for forming a carbon thin film, in which a carbon thin film is formed on the surface of a substrate 6 placed on the side of a magnetic field space 4 between them.
（作用）
すなわち、上記手段では、基板６の表面部はターゲット
３．３相互間に形成されるプラズマに直接曝されないた
めに、該プラズマによるカーボン薄膜の損傷は極力回避
されることとなる。(Function) That is, in the above means, since the surface portion of the substrate 6 is not directly exposed to the plasma formed between the targets 3 and 3, damage to the carbon thin film due to the plasma is avoided as much as possible.
また、スパッタリングによりターゲット３．３から飛散
されるカーボン粒子は、３．０ｍＴｏｒｒ以下の低圧の
スパッタガス中では基板表面に到達する迄のスパッタガ
ス粒子との衝突回数が少なく、当該衝突によるエネルギ
ーの消失が小さい。よって、エネルギー量の大きいカー
ボン粒子は基板に到達した際の移動度が大きいために、
基板表面に形成されるカーボン粒子は分散して、柱状構
造に凝集しないこととなる。In addition, carbon particles scattered from the target 3.3 by sputtering collide with sputter gas particles few times before reaching the substrate surface in a low-pressure sputter gas of 3.0 mTorr or less, and energy dissipates due to the collisions. is small. Therefore, carbon particles with a large amount of energy have a large mobility when reaching the substrate, so
The carbon particles formed on the substrate surface are dispersed and do not aggregate into a columnar structure.
尚、相互に対面して配置された二枚のターゲット３，３
間の磁界空間部４にプラズマ空間を発生させる上記スパ
ッタ手段では、そのスパッタガス圧をマグネトロンスパ
ッタ手段の場合よりもかなり低圧に設定した条件下であ
ってもカーボンに適正な放電を行わせてスパッタリング
が行える。In addition, two targets 3, 3 placed facing each other
In the above-mentioned sputtering means that generates a plasma space in the magnetic field space 4 between them, even under conditions where the sputtering gas pressure is set to a considerably lower pressure than in the case of magnetron sputtering means, carbon is caused to perform appropriate discharge to perform sputtering. can be done.
（実施例） 以下、本発明の実施例について説明する。(Example) Examples of the present invention will be described below.
第１図に示す如き対向ターゲット式のスパッタ装置を用
いてスパッタ作業を行うには、先ずチャンバー１内の一
対のターゲットホルダー２．２にカーボン製のターゲッ
ト３．３を装着せしめ、その後チャンバー１内を真空引
きした後にスパッタガスとしてのアルゴンガスを導入せ
しめて、当該ガス圧ＰＡｒを３．０ｍＴｏｒｒ以下に設
定せしめる。To perform sputtering using a facing target type sputtering apparatus as shown in FIG. After evacuating, argon gas as a sputtering gas is introduced, and the gas pressure PAr is set to 3.0 mTorr or less.
その後、磁石７，７・・・により磁界が形成された前記
ターゲット３，３の相互間の磁界空間部４の側方に配置
された基板ホルダー５に基板６をセットせしめて、両タ
ーゲット３．３に負の電圧を印加させることにより、該
ターゲットのスパッタリングを行うのである。該スパッ
タ作業では、磁界空間部４にカーボン粒子、ガンマ−電
子、アルゴンイオンが飛散したプラズマ空間が形成され
て、順次カーボン粒子が基板６、の表面に堆積付着する
。Thereafter, the substrate 6 is set on the substrate holder 5 placed on the side of the magnetic field space 4 between the targets 3, 3 in which a magnetic field is formed by the magnets 7, 7, . By applying a negative voltage to 3, the target is sputtered. In the sputtering operation, a plasma space in which carbon particles, gamma electrons, and argon ions are scattered is formed in the magnetic field space 4, and the carbon particles are deposited and adhered to the surface of the substrate 6 one after another.
よって、上記スパッタ作業に於いては、基板６の表面部
に形成されるカーボン薄膜はプラズマ空間に直接曝され
ず、よって該薄膜が損傷を受けることが極力回避される
。Therefore, in the above sputtering operation, the carbon thin film formed on the surface of the substrate 6 is not directly exposed to the plasma space, so that damage to the thin film is avoided as much as possible.
また、ターゲット３，３から飛散するカーボン粒子は、
アルゴンガス粒子との衝突を繰返しながら最終的に基板
表面に到達して付着する経過を辿るのであるが、この場
合アルゴンガス圧が高い場合には、カーボン粒子が基板
表面に到達する迄にアルゴンガス粒子と衝突する回数が
増え、その衝突の都度カーボン粒子のもつエネルギーが
減少する。当該エネルギーが大幅に低下した状態で基板
表面に到達したカーボン粒子は、基板表面での移動度が
非常に小さく、よってこれらカーボン粒子が堆積された
場合には柱状構造の膜質となる。In addition, carbon particles scattered from targets 3 and 3 are
Through repeated collisions with the argon gas particles, they eventually reach the substrate surface and adhere to it. In this case, if the argon gas pressure is high, the argon gas The number of collisions with particles increases, and the energy held by carbon particles decreases with each collision. The carbon particles that reach the substrate surface in a state where the energy is significantly reduced have very low mobility on the substrate surface, and therefore, when these carbon particles are deposited, the film has a columnar structure.
これに対して、本実施例の如くアルゴンガス圧を低圧に
設定した場合には、カーボン粒子とアルゴンガス粒子と
の頻繁な衝突が回避できることにより、基板表面上での
カーボン粒子の移動度を大きくして、第２図の如く基板
６の表面上には均一な状態のカーボン薄膜８が形成でき
るのである。On the other hand, when the argon gas pressure is set to a low pressure as in this example, frequent collisions between carbon particles and argon gas particles can be avoided, thereby greatly increasing the mobility of carbon particles on the substrate surface. As a result, a uniform carbon thin film 8 can be formed on the surface of the substrate 6 as shown in FIG.
この様にカーボン薄膜から柱状構造が消失するのは、ア
ルゴンガス圧が３．０ｍＴｏｒｒ以下であることが本件
発明者の実験によって確認できた。The inventor's experiments have confirmed that the columnar structure disappears from the carbon thin film when the argon gas pressure is 3.0 mTorr or less.
尚、上記実施例に於いては、スパッタガスとしてアルゴ
ンガスを用いてなるが、本発明はこれに限定されず他の
不活性ガスを用いてもよい。またスパッタ作業時のスパ
ッタガス圧はそのガスの具体的な種類を問わず３．０ｍ
Ｔｏｒｒ以下に設定されればよい。In the above embodiment, argon gas is used as the sputtering gas, but the present invention is not limited thereto, and other inert gases may be used. Also, the sputtering gas pressure during sputtering work is 3.0 m regardless of the specific type of gas.
It is sufficient if it is set to Torr or less.
更に、本発明の実施に適用されるスパッタ装置の具体的
な構成も決して上記実施例の如く限定されず、該スパッ
タ装置は任意に設計変更自在である。要は二枚のターゲ
ットを相互に対面配置させて該ターゲット間に磁界空間
部を形成させて、該磁界空間部の側方に基板を背面配置
させた対向ターゲット式のスパッタ手段が適用されるも
のであればよい。Furthermore, the specific configuration of the sputtering apparatus applied to the implementation of the present invention is by no means limited to the above embodiments, and the design of the sputtering apparatus can be changed as desired. In short, a facing target type sputtering means is applied in which two targets are placed facing each other to form a magnetic field space between the targets, and a substrate is placed on the back side on the side of the magnetic field space. That's fine.
その他、本発明はターゲットの形状や大きさ。In addition, the present invention is concerned with the shape and size of the target.
ターゲット印加電圧値、磁界空間部の磁場強さ。Target applied voltage value, magnetic field strength in the magnetic field space.
基板の具体的な種類等も任意に変更自在である。The specific type of substrate, etc. can also be changed arbitrarily.
（発明の効果）
叙上の様に、本発明は対面配置させたカーボン製のター
ゲットをスパッタリングせしめて、該ターゲット相互間
の磁界空間部の側方に配置させた基板表面にスパッタ粒
子を付着させる所謂対向ターゲット式のスパッタ手段を
採用してなるために、基板表面に形成されるカーボン薄
膜は従来のマグネトロンスパッタ手段の如くプラズマに
直接曝されて損傷する様なことがなく、表面精度の優れ
たカーボン薄膜が得られる効果がある。(Effects of the Invention) As described above, the present invention sputters carbon targets placed facing each other, and causes sputtered particles to adhere to the surface of a substrate placed on the side of the magnetic field space between the targets. Because it uses a so-called facing target type sputtering method, the carbon thin film formed on the substrate surface is not damaged by direct exposure to plasma as in conventional magnetron sputtering methods, resulting in excellent surface precision. This has the effect of producing a carbon thin film.
しかも、本発明はスパッタガス圧を３ ｍＴｏｒｒ以下
の低圧状態に設定してスパッタリングを行うために、タ
ーゲットから飛散したカーボン粒子がスパッタガス粒子
と衝突して失うエネルギーロスの減少を図って基板表面
でのカーボン粒子の自由度を大きくでき、その結果カー
ボン粒子を基板表面で均等な密度で分散させることがで
きて、カーボン薄膜の柱状構造化を解消できることとな
った。Moreover, since the present invention performs sputtering by setting the sputtering gas pressure to a low pressure state of 3 mTorr or less, the carbon particles scattered from the target collide with the sputtering gas particles and lose energy loss. The degree of freedom of the carbon particles can be increased, and as a result, the carbon particles can be dispersed at a uniform density on the substrate surface, making it possible to eliminate the columnar structure of the carbon thin film.
従って、本発明によれば基板との剥離強度や機械強度、
及び表面精度等に優れたカーボン薄膜が得られ、磁気デ
ィスクの保護膜等として適切に機能するカーボン薄膜を
提供し、実用に供することができるという格別な利点が
ある。Therefore, according to the present invention, peel strength with the substrate, mechanical strength,
The present invention has the special advantage that a carbon thin film with excellent surface precision and the like can be obtained, and a carbon thin film that functions appropriately as a protective film for a magnetic disk can be provided and put to practical use.
第１図は本発明に用いるスパッタ装置の一例を示す説明
図。
第２図は本発明によって得られるカーボン薄膜の組織状
態を示す説明図。
第３図は従来の方法を示す説明図。
第４図はカーボン薄膜の柱状構造を示す説明図。
３．３・・・ターゲット ４・・・磁界空間部 ６・・
・基板出願人 株式会社大阪真空機器製作所
代理人 弁理士 胚本 昇
第１図
第２図
第３図
ｆｆ４図FIG. 1 is an explanatory diagram showing an example of a sputtering apparatus used in the present invention. FIG. 2 is an explanatory diagram showing the structure of a carbon thin film obtained by the present invention. FIG. 3 is an explanatory diagram showing a conventional method. FIG. 4 is an explanatory diagram showing the columnar structure of a carbon thin film. 3.3...Target 4...Magnetic field space part 6...
・Substrate applicant: Osaka Vacuum Equipment Manufacturing Co., Ltd. Agent: Patent attorney: Noboru Ukemoto Figure 1 Figure 2 Figure 3 Figure ff4 Figure
Claims (1)
３を、３．０ｍＴｏｒｒ以下のスパッタガス圧中で陰極
とすべく電圧を印加してスパッタリングさせて、前記タ
ーゲット３、３相互間の磁界空間部４の側方に配置せし
めた基板６の表面にカーボン薄膜を形成することを特徴
とするカーボン薄膜のスパッタ形成方法。Carbon targets 3 arranged facing each other,
3 is sputtered by applying a voltage to serve as a cathode in a sputtering gas pressure of 3.0 mTorr or less, and sputtering is performed on the surface of the substrate 6 disposed on the side of the magnetic field space 4 between the targets 3 and 3. A method for forming a carbon thin film by sputtering, the method comprising forming a carbon thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62318407A JPH01160815A (en) | 1987-12-15 | 1987-12-15 | Formation of carbon thin film by sputtering |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62318407A JPH01160815A (en) | 1987-12-15 | 1987-12-15 | Formation of carbon thin film by sputtering |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01160815A true JPH01160815A (en) | 1989-06-23 |
Family
ID=18098806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62318407A Pending JPH01160815A (en) | 1987-12-15 | 1987-12-15 | Formation of carbon thin film by sputtering |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01160815A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9605340B2 (en) | 2012-07-05 | 2017-03-28 | Intevac, Inc. | Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates |
-
1987
- 1987-12-15 JP JP62318407A patent/JPH01160815A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9605340B2 (en) | 2012-07-05 | 2017-03-28 | Intevac, Inc. | Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates |
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