JPH01158742A - Manufacture of device with fine leads - Google Patents

Manufacture of device with fine leads

Info

Publication number
JPH01158742A
JPH01158742A JP62317723A JP31772387A JPH01158742A JP H01158742 A JPH01158742 A JP H01158742A JP 62317723 A JP62317723 A JP 62317723A JP 31772387 A JP31772387 A JP 31772387A JP H01158742 A JPH01158742 A JP H01158742A
Authority
JP
Japan
Prior art keywords
wire
bonded
bonding
capillary
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62317723A
Other languages
Japanese (ja)
Inventor
Kazumi Takahata
高畠　和美
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP62317723A priority Critical patent/JPH01158742A/en
Publication of JPH01158742A publication Critical patent/JPH01158742A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/4805—Shape
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/4899—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids
    • H01L2224/48996—Auxiliary members for wire connectors, e.g. flow-barriers, reinforcing structures, spacers, alignment aids being formed on an item to be connected not being a semiconductor or solid-state body
    • H01L2224/48997—Reinforcing structures
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
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    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
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    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/85951—Forming additional members, e.g. for reinforcing
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    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To preferably perform a next ball bonding by conducting a reinforcing ball bonding, then achieving a stitch bonding and then cutting a fine wire. CONSTITUTION:When wires 4, 5 to be bonded are connected by a fine lead 6, the diameter of a ball 7a formed at the end of a fine wire 6 is formed twice - three times as large as the diameter of the wire 6, the end pressurizing face of a capillary 10 is pressed to the wire 4 to be bonded, thereby forming a ball bonding part 7. Then, when the wire 6 is collapsed and connected to the wire 5 to be bonded, a stitch bonding part 8 is formed, and when the wire 6 is cut in a fixed state, the wire 6a is led in a predetermined distance. Accordingly, it is heated to form a ball 9a, and a reinforcing ball bonding part 9 is formed. Then, the capillary 10 is moved to another region of the second wire 5 to be bonded, a stitch bonding part 12 is formed, and the wire 6a is then cut. Therefore, the formation of the ball can be preferably conducted.

Description

【発明の詳細な説明】 「産業上の利用分野〕 本発明は、半導体装置等のリード細線を有する装置の製
造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a device having thin lead wires such as a semiconductor device.

〔従来の技術〕[Conventional technology]

第４図に示すように、支持板１上に例えばモノリシック
ＩＣチップから敗る第１の半導体素子２とパワートラン
ジスタチップから成る第２の半導体素子３とを固着し、
第１の半導体素子２の例えばＡＩ電極から欣５る第１の
被ワイヤボンディング部分４と第２の半導体素子６のＡ
１電極がら成る第２の被ワイヤボンディング部分５とを
Ａｕ線から成るリード細線６で接続した栴成の半導体装
ｔは公知である。この種の半導体装置におけるリード細
線乙の一端は第１の被ワイヤボンディング部分４にポー
ルボンディング部７で固着さｔ（、他端は第２の被ワイ
ヤボンディング部分５Ｖｃステツチボンディング部８で
固着されている。As shown in FIG. 4, a first semiconductor element 2 consisting of, for example, a monolithic IC chip and a second semiconductor element 3 consisting of a power transistor chip are fixed on a support plate 1,
For example, the first wire-bonded portion 4 from the AI electrode of the first semiconductor element 2 and the A of the second semiconductor element 6
A semiconductor device t of Sensei in which a second wire-bonded portion 5 consisting of one electrode is connected with a thin lead wire 6 consisting of an Au wire is well known. In this type of semiconductor device, one end of the thin lead wire B is fixed to the first wire-bonded part 4 at the pole bonding part 7 (t), and the other end is fixed to the second wire-bonded part 5Vc by the stitch bonding part 8. ing.

ポールボンディング部７はリードａ線６の直径の２〜３
倍のボールを形成して固着するボールボンディング法Ｉ
ｉ１」ちネイルヘッドボンディング法に基づくボンディ
ング部分であるので、第１の被ワイヤボンディング部分
４に対して比較的に高い信頼性を有して結合さ才してい
る。一方、ステッチボンディング都８はリード細線６を
押し潰した状態に形成されているので、第２の被ワイヤ
ボンディング部分５に対してポールボンディング部７よ
りも弱く結合されている。この弱い、ステッチボンディ
ング部８を補強するために、第５図に示′ｆ如くステッ
チボンディング部８の上に補強のポールボンディング部
９を設けることが例えば特開昭６１−２８０６２６号公
報に開示されている。The pole bonding part 7 is 2 to 3 times the diameter of the lead A wire 6.
Ball bonding method I that forms and secures a double ball
Since it is a bonding part based on the nail head bonding method, it can be bonded to the first wire bonding part 4 with relatively high reliability. On the other hand, since the stitch bonding cap 8 is formed by crushing the lead wire 6, it is weakly bonded to the second wire-bonded portion 5 than the pole bonding portion 7. In order to reinforce this weak stitch bonding part 8, providing a reinforcing pole bonding part 9 on the stitch bonding part 8 as shown in FIG. ing.

〔発明が解決しようとする問題虞〕[Possible problem to be solved by the invention]

補強のポールボンディング部９を形成すると。 When the reinforcing pole bonding part 9 is formed.

確かに第２の被ワイヤボンディング部分５に対するリー
ド細線６の結合強度は大きくなる。しかし、従来の方法
では、補強のポールボンディング部９を形成した後に、
キャピラリ１０を所定量だけ上昇させ、しかる後キャピ
ラリ１０からリード細線６ａを繰り出さないようにして
キャピラリ１０を上昇さセることによってリード細線６
ａを破断するため、リード細線６ａの破断位置が不定と
なった。この様に破断位置が不定になり、キャピラリ１
０からのリード細線６ａの突出室が少ないと。It is true that the bonding strength of the thin lead wire 6 to the second wire-bonded portion 5 increases. However, in the conventional method, after forming the reinforcing pole bonding part 9,
By raising the capillary 10 by a predetermined amount and then raising the capillary 10 without letting out the lead wire 6a from the capillary 10, the lead wire 6a is raised.
Since the thin lead wire 6a was broken, the breaking position of the thin lead wire 6a became undefined. In this way, the fracture position becomes unstable, and the capillary 1
If the protrusion chamber of the thin lead wire 6a from 0 is small.

次のポールボンディングのためのボールをリード細＃６
ａの先端に良好に形成することが不可能になった。即ち
１通常高さ位置が固定されているボール形成用のトーチ
Ｃポールを形成するために火花又は炎を発生する部分）
からの火花又は炎がリード細線６ａに十分に当らなくな
り、ボールの形成が不完全になった。ボールを完全に形
成することができなければ次のポールボンディングを良
好に行うことができない。Thin #6 leading ball for next pole bonding
It became impossible to form a good shape at the tip of a. (1) A torch for ball formation whose height position is usually fixed (a part that generates sparks or flames to form a pole)
The sparks or flames did not sufficiently hit the thin lead wire 6a, resulting in incomplete ball formation. If the ball cannot be completely formed, the next pole bonding cannot be performed successfully.

そこで、本発明の目的は、リード細線を有する装置を製
造する際に、補強のポールボンディング部を形Ｉｉ５．
するにも拘らず１次のポールボンディングを良好に行う
ことができる方法を提供することにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a reinforcing pole bonding portion of the shape Ii5.
It is an object of the present invention to provide a method that can perform primary pole bonding satisfactorily in spite of the above.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点を解決し、上記目的を達成するための本発明
は、キャピラリから繰り出された細線を第１の被ボンデ
ィング部分にポールボンディングした後に第２の被ボン
ディング部分にステッチボンディングし、更に、前記キ
ャピラリから繰り出された細線を前記ステッチボンディ
ングの部分の少なくとも一部を覆うようにポールボンデ
ィングし、しかる後前記第１の被ボンディング部分又は
前記第２の被ボンディング部分に対して電気的に影響を
与えない部分にステッチボンディングすることを特徴と
するリード細線を有する装置の製造方法に係わるもので
ある。In order to solve the above-mentioned problems and achieve the above-mentioned objects, the present invention pole-bonds a thin wire drawn out from a capillary to a first bonded part and then stitch-bonds it to a second bonded part, and further comprises: Pole-bonding a thin wire fed out from a capillary so as to cover at least a portion of the stitch bonding portion, and then electrically influencing the first bonded portion or the second bonded portion. The present invention relates to a method of manufacturing a device having thin lead wires, which is characterized by stitch bonding to the parts where there are no lead wires.

〔作　用〕[For production]

上記発明において補強用のボールボンディングを行った
後にステッチボンディングを行い、しかる後細線を切断
すると、ステッチボンディング部でリード細線が切断さ
れるため、キャピラリからの細線の繰り出し量のバラツ
キは殆んど生じなくなり、次のポールボンディングのた
めのボールを良好に形ａｊることが可能になる。In the above invention, when stitch bonding is performed after reinforcing ball bonding and the thin wire is then cut, the lead thin wire is cut at the stitch bonding part, so there is almost no variation in the amount of thin wire fed out from the capillary. This makes it possible to properly shape the ball for the next pole bonding.

〔実施例〕〔Example〕

次に１本発明の一実施例に係わる混成集積回路装置の製
造方法を第１図囚〜（Ｊｌ及び第２図によって説明する
。Next, a method of manufacturing a hybrid integrated circuit device according to an embodiment of the present invention will be explained with reference to FIGS.

この実施例の混成集積回路装置は、支持板１の上にモノ
リシックＩＣチップから成る第１の半導体素子２とパワ
ートランジスタチップから成る第２の半導体素子３とを
有する。The hybrid integrated circuit device of this embodiment has on a support plate 1 a first semiconductor element 2 made of a monolithic IC chip and a second semiconductor element 3 made of a power transistor chip.

第４図と同様に第１の半導体素子２のＡＩ金楓電極から
成る第１の被ワイヤボンディング部分４と第２の半導体
素子６のＡＩ金楓電椿（エミッタ１１．極）から成る第
２の被ワイヤボンディング部分５とをＡｕ線から成るリ
ード細線６で接続する際には、ます、第１図（Ａ、）に
示す如く、ワイヤボンダのキャピラリ１０の中央のワイ
ヤ繰り出し孔１１から繰り出されている細線６の先端に
電気スパークまたは水素炎にてボール７ａを形成する。Similarly to FIG. 4, the first wire-bonded portion 4 is made of an AI gold maple electrode of the first semiconductor element 2, and the second wire-bonded part 4 is made of an AI gold maple electrode (emitter 11. pole) of the second semiconductor element 6. When connecting the thin lead wire 6 made of Au wire to the wire-bonded portion 5 of the wire bonder, first, as shown in FIG. A ball 7a is formed at the tip of the thin wire 6 using an electric spark or hydrogen flame.

ここで、ボール７ａの＠径は細線６の直径の２〜６倍Ｖ
Ｃする。Here, the diameter of the ball 7a is 2 to 6 times the diameter of the thin wire 6.
C.

次に、第２図のノに示すように、第１の被ボンディング
部分４にポール７ａｋキヤピラリ１０の先端加圧面で押
し付ける。このとき、第１の被ポンティング部分４は加
熱されており、キャピラリ１０には第１の被ポンティン
グ部分４０表面と平行する方向に超音７Ｎによる撮動が
加オらｔしている。Next, as shown in FIG. 2, the tip pressure surface of the pole 7ak capillary 10 is pressed against the first bonded portion 4. At this time, the first to-be-ponted portion 4 is being heated, and the capillary 10 is being imaged by the ultrasonic sound 7N in a direction parallel to the surface of the first to-be-ponted portion 40.

これにより、熱圧着ボンディングと超音波ボンディング
の併用により、第１の被ボンディング部分４ＶＣ細−６
が釘頭状に接続されたポールポンデイング部７が形成さ
れる。As a result, by a combination of thermocompression bonding and ultrasonic bonding, the first bonded part 4VC thin-6
A pole ponding portion 7 is formed in which the poles are connected in the shape of a nail head.

次いで、第１図（Ｑに示すように、キャピラリ１０を細
線６を繰り出しながら上昇させて大きく引き回すように
して、第２の被ボンディング部分５に向って移ＩＥｌ］
−ｆる。Next, as shown in FIG. 1 (Q), the capillary 10 is raised while feeding out the thin wire 6, and then moved toward the second bonded part 5 in a wide manner.
-fru.

次に、第１図（Ｄに示１ように、第２の被ボンディング
部分５に対して細線６をキャピラリ１０の加圧面にて押
し当て、細線６を押し潰して第２の被ボンディング部分
５に接続する。これにより。Next, as shown in FIG. 1 (D), the thin wire 6 is pressed against the second bonded portion 5 with the pressure surface of the capillary 10, the thin wire 6 is crushed, and the second bonded portion 5 is pressed. Connect to .This will allow you to:

ステッチボンディング部８が形成される。こノドき、第
２の被ボンディング部分５は加熱されており、キャピラ
リ１０には前述のように超音波振蛎が加えられている。A stitch bonding portion 8 is formed. At this time, the second bonded portion 5 is heated, and the capillary 10 is subjected to ultrasonic vibration as described above.

次に、第１図■に示すように、キャピラリ１０を所定の
高さまで上昇させ、細線６をキャピラリ１０から繰り出
さないように固定した状態としてキャピラリ１０を更に
上昇させて細線６を切断する。細線６はステッチボンデ
ィング部８で押し潰されているので、第１図ω′）ＶＣ
示す如く、ステッチボンディング部８の端部ｒａ断さｔ
し、細＃６ａがキャピラリ１０から略一定量だけ導出さ
れた状態になる。Next, as shown in FIG. 1 (2), the capillary 10 is raised to a predetermined height, the thin wire 6 is fixed so as not to be drawn out from the capillary 10, and the capillary 10 is further raised to cut the thin wire 6. Since the thin wire 6 is crushed by the stitch bonding part 8, the line 6 shown in FIG.
As shown, the end of the stitch bonding part 8 is cut ra.
However, the thin #6a is brought out from the capillary 10 by a substantially constant amount.

次に、第１図（ＧＩ　ＶＣ示すようにキャピラリ１０か
ら導出されている細線６ａを火花又は炎で加熱してポー
ル９ａを第１図囚と同様に形成する。Next, as shown in FIG. 1 (GI VC), the thin wire 6a led out from the capillary 10 is heated with a spark or flame to form a pole 9a in the same manner as in FIG.

次ＶＣ，このポール９ａをステッチボンディング部８の
上にキャピラリ１０で押し付けて第１図の）の場合と同
一の方法で補強用のポールボンディング部９を第１図お
に示すように形成する。Next, the pole 9a is pressed onto the stitch bonding part 8 with a capillary 10 to form a reinforcing pole bonding part 9 as shown in FIG.

次に、キャピラリ１０を第１図ｆｌｌＫ示すように上昇
させ、第２の被ワイヤボンディング部分５の別の領域（
第６の被ワイヤボンディング部分と呼ぶこともできる）
ＶＣ移勲さセ、第１図（Ｊｌに示す如くステッチボンデ
ィング部１２を第１図０の工程と同一の方法で形成する
。なお、第１図（Ｊｌは第２図のＪ−Ｊｉｌｉｊｉｌ［
対応するｈ面図である。その後、キャピラリ１０を第１
図＠（ト）と同様に移動し、細＆６ａをステッチボンデ
ィング部１２から切断し、次のポールボンディングの糸
偏を行う。Next, the capillary 10 is raised as shown in FIG.
It can also be called the sixth wire-bonded part)
In the VC transfer process, the stitch bonding portion 12 as shown in FIG. 1 (Jl) is formed by the same method as in the process of FIG.
It is a corresponding h-plane view. After that, the capillary 10 is
Move in the same manner as shown in Figure ＠(g), cut the thin &6a from the stitch bonding part 12, and perform the thread deflection for the next pole bonding.

補強用のための細線６ａは第２囚に示す如く接続用リー
ド細線６の蜆びる方向に対して略直角な方向に延びてい
る。また、補強用ポールボンディング部９はステッチボ
ンディング部８及びこノ近傍のリード細線６の両方を榎
い且つこれ等を跨ぐように形成されている。The reinforcing thin wire 6a extends in a direction substantially perpendicular to the direction in which the connecting lead thin wire 6 extends, as shown in the second column. Further, the reinforcing pole bonding portion 9 is formed so as to extend over both the stitch bonding portion 8 and the thin lead wire 6 in the vicinity thereof, and to straddle them.

本実施例は次のオ０点を壱する。This embodiment uses the following O0 points.

（１）　　補強用のポールボンディング部９を形成した
直後に細線６ａを切断セすに、切断用のステ・ノチボン
ディング部１２を形成した後に切断するので、その後の
キャピラリ１０からの細線の導出量を第１図（ト）と同
様に略一定［することができる。(1) When cutting the thin wire 6a immediately after forming the reinforcing pole bonding portion 9, cutting is performed after forming the stem/notch bonding portion 12 for cutting, so the amount of thin wire drawn out from the capillary 10 after that is reduced. can be kept approximately constant as in FIG. 1(G).

この結果、ポールボンディング工程でのポールの形成を
良好に行うことができる。As a result, the poles can be formed well in the pole bonding process.

（２）　　補強用ポールボンディング部９をステッチボ
ンディング部８及びこの近傍のリード細線６を跨ぐよう
に形ａ″ｆるので１強固な補強が達成さｔしる。また、
ステッチボンディング部８と補強用ポールボンディング
ｓ９０合計の肉厚が４０〜５０μｍとなるため、ステッ
チボンディング部８のみの厚さ（約１０μｍ）よりも大
幅ＶｃＪＩ！くなる。この結果、ボンディング終了後に
、装置を高温放置試験（例えば２００℃、２０時間放置
）にかけてもＡＩから成る第２の被ワイヤボンディング
部分５とＡｕから成るリード細線６とに基づ＜　ＡｕＡ
ｌ２、ＡｕＡｌ等から成るＡｕ−Ａｌ合金層の成長が、
ステッチボンディングｓ８と補強用ポールボンディング
部９との組み合セボンディング部の全部に及ぶことはな
い。このため、クラックに基づく接続不良の発生が防止
される。もし、約１０μｍの、ステッチボンディング部
８のみであれば、Ａｕ−Ａｌ合金層が略全部に拡がり、
クラックによる接続不良が発生する。(2) Since the reinforcing pole bonding portion 9 is shaped a″f so as to straddle the stitch bonding portion 8 and the thin lead wire 6 in the vicinity, strong reinforcement is achieved.Also,
Since the total thickness of the stitch bonding part 8 and the reinforcing pole bonding s90 is 40 to 50 μm, VcJI is significantly larger than the thickness of the stitch bonding part 8 alone (approximately 10 μm)! It becomes. As a result, even if the device is subjected to a high-temperature storage test (for example, left at 200° C. for 20 hours) after the bonding is completed, the result is that the second wire-bonded portion 5 made of AI and the thin lead wire 6 made of Au are less than AuA.
The growth of an Au-Al alloy layer consisting of l2, AuAl, etc.
The combination of the stitch bonding s8 and the reinforcing pole bonding part 9 does not cover the entire second bonding part. Therefore, connection failures due to cracks are prevented from occurring. If there is only the stitch bonding part 8 of about 10 μm, the Au-Al alloy layer will spread to almost the entire area,
Connection failure occurs due to cracks.

〔変形例〕[Modified example]

本発明は上述の実施例に限定されるものでなく、例えば
次の変形が可能１゛ある。The present invention is not limited to the above-described embodiments, and the following modifications are possible, for example.

（１）　　第３図に示す如く補強用細線６ａの切断用の
ステッチボンディング部１２を第２の被ワイヤボンディ
ング部分５と別の第６のワイヤボンディング部分１６に
形成してもよい。但し、この第６のワイヤボンディング
部分１６は第２のワイヤボンディング部分５Ｖｃ篭免的
に幾影響を及ぼさない領域でなければならない。(1) As shown in FIG. 3, a stitch bonding portion 12 for cutting the thin reinforcing wire 6a may be formed in the second wire bonding portion 5 and a sixth wire bonding portion 16 different from the second wire bonding portion 5. However, this sixth wire bonding portion 16 must be a region that does not have any influence on the immunity of the second wire bonding portion 5Vc.

（２）第１及び第２の被ワイヤボンディング部分４．５
の一方又は両方がリードフレーム等の電極部材の場合に
も適用可能である。(2) First and second wire bonding parts 4.5
It is also applicable when one or both of the above is an electrode member such as a lead frame.

〔発明の効果〕〔Effect of the invention〕

上述のように本発明によれば、補強のためのポールボン
ディング部を准する装置を高い生産性を有して製造する
ことができる。As described above, according to the present invention, a device for preparing a pole bonding portion for reinforcement can be manufactured with high productivity.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図囚〜ｆＪｌは本発明の一実施例ＶＣ係わる混成集
積回路装置の婁遣方法を工程＋１１ｅｌ　Ｋ説明するた
めの断面図、 第２図は第１図（Ｊ＋　ＶＣ対応する平面図、第３図は
変形例のポンティング部分を示す平面図、 第４図及び第５図は従来のワイヤボンディングケ説明す
るための断面図である。 ４・・・第１の被ワイヤボンディング部分、５・・第２
の被ワイヤボンディング部分、６・・ａｍ、７・・ポー
ルボンディング部、８・・・ステッチボンディング部、
９・・・補強用ポールボンディング部、ＩＱ・・キャピ
ラリ、１２・・ステッチボンディング部。 代　　理　　人　　　高　　野　　則　　次Ｎノ　　　
　　　　　　　　　　　　　〜ノへ 昧 ← 区　　　　　　　　　区 の　　　　　　　　　　　寸 滞　　　　　　　　昧 滌 手続補正書（自発） 昭和６３年２ 特許庁長官　小川邦夫　　　　殿 １、事件の表示 昭和６２年　特　　許　　願　第３１７７２３　　号２
、発明の名称　　リード細線を有する装置の製造方法３
　補正をする者 事件との関係　　出願人 ４代理人 拗ル 鞄 １＃Ｊ土 ５、補正命令の日付　自　　発 ６、補正により増加する発明の数 ７、補正の対象 ｆＩＪ　　特１ｆｆ−請求の範囲を別紙の通りに補正す
る。 補正する。 ２、特許請求の範囲 〔１〕　　キャピラリから繰り出された細線を第１の被
ボンディング部分にポールボンディングした後ニ第２の
被ボンディング部分にステッチボンディングし、更に、
前記キャピラリから繰り出された細線を前記ステッチボ
ンディングの部分の少なくとも一部を覆うようにポール
ボンディングし、しかる後前記第２の被ボンディング部
分又は前記第２の被ボンディング部分に対して電気的に
影響を与えない部分にステッチボンディングするコトを
特徴とするリード細線を有する装置の製造方法。Figures 1-fJl are cross-sectional views for explaining the method of procuring a hybrid integrated circuit device related to VC according to an embodiment of the present invention, and Figure 2 is a plan view corresponding to Figure 1 (J+ VC). 3 is a plan view showing a modified ponting portion, and FIGS. 4 and 5 are cross-sectional views for explaining the conventional wire bonding device. 4. First wire-bonded portion; 5.・Second
wire bonding part, 6...am, 7...pole bonding part, 8...stitch bonding part,
9...Reinforcement pole bonding part, IQ...Capillary, 12...Stitch bonding part. Agent Noriyuki Takano
〜ノへ ← Ward Ward's delayed amendment (voluntary) 1985 2 Director General of the Patent Office Kunio Ogawa 1, Indication of the case 1988 Patent Application No. 317723 2
, Title of the invention: Method for manufacturing a device having thin lead wires 3
Relationship with the case of the person making the amendment: Applicant 4, Agent, 1#J, Date of order for amendment: 6, Number of inventions increased by the amendment, 7, Subject of amendment fIJ Feature 1ff - Scope of claims Correct as shown in the attached sheet. to correct. 2. Scope of Claims [1] A thin wire drawn out from a capillary is pole-bonded to the first bonded part, and then stitch-bonded to the second bonded part, and further,
Pole-bonding the thin wire fed out from the capillary so as to cover at least a portion of the stitch bonding portion, and then electrically affecting the second bonded portion or the second bonded portion. A method for manufacturing a device having a thin lead wire, characterized by stitch bonding in the portions that are not bonded.

Claims (1)

【特許請求の範囲】 〔１〕キャピラリから繰り出された細線を第１の被ボン
ディング部分にポールボンディングした後に第２の被ボ
ンディング部分にステッチボンディングし、更に、前記
キャピラリから繰り出された細線を前記ステッチボンデ
ィングの部分の少なくとも一部を覆うようにポールボン
ディングし、しかる後前記第１の被ボンディング部分又
は前記第２の被ボンディング部分に対して電気的に影響
を与えない部分にステッチボンディングすることを特徴
とするリード細線を有する装置の製造方法。[Scope of Claims] [1] The thin wire fed out from the capillary is pole-bonded to the first bonded part, and then stitch-bonded to the second bonded part, and the thin wire drawn out from the capillary is then stitch-bonded to the second bonded part. Pole bonding is performed to cover at least a portion of the bonding portion, and then stitch bonding is performed to a portion that does not electrically affect the first bonded portion or the second bonded portion. A method of manufacturing a device having a thin lead wire.
JP62317723A 1987-12-16 1987-12-16 Manufacture of device with fine leads Pending JPH01158742A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62317723A JPH01158742A (en) 1987-12-16 1987-12-16 Manufacture of device with fine leads

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62317723A JPH01158742A (en) 1987-12-16 1987-12-16 Manufacture of device with fine leads

Publications (1)

Publication Number Publication Date
JPH01158742A true JPH01158742A (en) 1989-06-21

Family

ID=18091321

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62317723A Pending JPH01158742A (en) 1987-12-16 1987-12-16 Manufacture of device with fine leads

Country Status (1)

Country Link
JP (1) JPH01158742A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999062114A1 (en) * 1998-05-27 1999-12-02 Robert Bosch Gmbh Method and contact point for producing a wire bonding connection
EP1065712A1 (en) * 1999-06-28 2001-01-03 Sumitomo Electric Industries, Ltd. Method of wire bonding in semiconductor device
KR100388295B1 (en) * 2000-10-26 2003-06-19 앰코 테크놀로지 코리아 주식회사 Wire bonding structure and its method
SG109494A1 (en) * 2002-04-08 2005-03-30 Inst Of High Performance Compu Liquid ejection pump system
JP2008263210A (en) * 2008-05-16 2008-10-30 Mitsubishi Electric Corp Power semiconductor package
EP2947684A4 (en) * 2013-01-18 2016-10-05 Hamamatsu Photonics Kk Electronic component device
JP2017183623A (en) * 2016-03-31 2017-10-05 ローム株式会社 Semiconductor device and semiconductor device manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712530A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Wire bonding method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712530A (en) * 1980-06-27 1982-01-22 Hitachi Ltd Wire bonding method

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7906858B2 (en) 1998-05-27 2011-03-15 Robert Bosch Gmbh Contact securing element for bonding a contact wire and for establishing an electrical connection
US6477768B1 (en) 1998-05-27 2002-11-12 Robert Bosch Gmbh Method and contact point for establishing an electrical connection
US7083077B2 (en) 1998-05-27 2006-08-01 Robert Bosch Gmbh Method and contact point for establishing an electrical connection
WO1999062114A1 (en) * 1998-05-27 1999-12-02 Robert Bosch Gmbh Method and contact point for producing a wire bonding connection
EP1065712A1 (en) * 1999-06-28 2001-01-03 Sumitomo Electric Industries, Ltd. Method of wire bonding in semiconductor device
US6426563B1 (en) 1999-06-28 2002-07-30 Sumitomo Electric Industries Semiconductor device and method for manufacturing the same
US6784090B2 (en) 1999-06-28 2004-08-31 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing the same
KR100388295B1 (en) * 2000-10-26 2003-06-19 앰코 테크놀로지 코리아 주식회사 Wire bonding structure and its method
SG109494A1 (en) * 2002-04-08 2005-03-30 Inst Of High Performance Compu Liquid ejection pump system
JP2008263210A (en) * 2008-05-16 2008-10-30 Mitsubishi Electric Corp Power semiconductor package
EP2947684A4 (en) * 2013-01-18 2016-10-05 Hamamatsu Photonics Kk Electronic component device
US9502456B2 (en) 2013-01-18 2016-11-22 Hamamatsu Photonics K.K. Electronic component device
JP2017183623A (en) * 2016-03-31 2017-10-05 ローム株式会社 Semiconductor device and semiconductor device manufacturing method

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