JPH01158323A - Photodetector - Google Patents
PhotodetectorInfo
- Publication number
- JPH01158323A JPH01158323A JP62175166A JP17516687A JPH01158323A JP H01158323 A JPH01158323 A JP H01158323A JP 62175166 A JP62175166 A JP 62175166A JP 17516687 A JP17516687 A JP 17516687A JP H01158323 A JPH01158323 A JP H01158323A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- light
- electrode
- layer
- signal output
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 238000003491 array Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002887 superconductor Substances 0.000 abstract description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 abstract description 3
- 239000010980 sapphire Substances 0.000 abstract description 3
- 229910003437 indium oxide Inorganic materials 0.000 abstract description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- 230000008020 evaporation Effects 0.000 abstract 3
- 238000001704 evaporation Methods 0.000 abstract 3
- 238000004544 sputter deposition Methods 0.000 abstract 3
- 230000003287 optical effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052981 lead sulfide Inorganic materials 0.000 description 1
- 229940056932 lead sulfide Drugs 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Radiation Pyrometers (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は光計測、光による位置計測、動体を撮像するカ
メラ及び熱像を観測する赤外カメラ等に用いる集光レン
ズ付の光検出素子に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a light detection element with a condenser lens used in optical measurement, position measurement using light, cameras for imaging moving objects, infrared cameras for observing thermal images, etc. It is.
従来の技術
超電導体を利用した光検出素子は超電導体中で光照射に
より準粒子が励起され、エネルギ・ギャップが変化する
という現象を利用しており、ＢａＰｂｔ−ｘＢｉｘ０３
を用いた例が報告されている（複本、村上、ＮＴＴ研究
実用化報告第３４巻第１）号ＰＰ１５９７〜１６０５
）。この光検出素子について第４図を参照しながら説明
する。第４図に示すように低キャリア濃度酸゛化物超電
導体５１はその中央部を細く形成し、その部分の電流密
度を高くして臨界電流値を越える状態にする。これによ
りその細い部分には電圧が印加された状態になる。この
状態で、光が照射されるとその部分に形成されているト
ンネル接合の電流−電圧特性が準粒子の光励起により変
化し、この変化を電気信号として取り出すことができる
。Conventional technology Photodetection elements using superconductors utilize the phenomenon that quasiparticles in the superconductor are excited by light irradiation and the energy gap changes.BaPbt-xBix03
An example using this has been reported (duplicate, Murakami, NTT Research Practical Application Report Vol. 34, No. 1) No. PP1597-1605
). This photodetecting element will be explained with reference to FIG. As shown in FIG. 4, the low carrier concentration oxide superconductor 51 is formed to have a narrow central portion, and the current density in that portion is increased to exceed the critical current value. As a result, a voltage is applied to the thin portion. In this state, when light is irradiated, the current-voltage characteristics of the tunnel junction formed in that part change due to optical excitation of the quasiparticle, and this change can be extracted as an electrical signal.
第４図では省略しであるが、酸化物超電導体５１は蒸着
基板の上に形成された薄膜であり、この薄膜内には基板
に垂直な粒界５２が形成されている。Although not shown in FIG. 4, the oxide superconductor 51 is a thin film formed on a vapor deposition substrate, and grain boundaries 52 perpendicular to the substrate are formed in this thin film.
この粒界５２の存在により、いわゆるジョセフソン接合
、すなわちトンネル接合が形成されている。Due to the existence of this grain boundary 52, a so-called Josephson junction, that is, a tunnel junction is formed.
そこで、上記酸化物超電導体５１を用いた光検出素子５
３を適当な抵抗値を有する負荷抵抗５４と直列に結線し
、電源５５よりバイアス電流を流すと、光検出素子５３
の両端に接続されたアース端子５６、出力端子５７間の
印加電圧が光照射により変動することになる。Therefore, the photodetector element 5 using the oxide superconductor 51 described above
3 is connected in series with a load resistor 54 having an appropriate resistance value, and when a bias current is applied from a power source 55, the photodetector element 53
The voltage applied between the ground terminal 56 and the output terminal 57 connected to both ends of the output terminal 57 changes due to the light irradiation.
発明が解決しようとする問題点
しかし、上記従来の超電導光検出素子５３に流す信号電
流の方向は基板面に平行であり、第４図から明らかなよ
うに、中央有感部の左右の幅広な部分が電極引出しの役
割を果たすために必要であり、中央部の有感部面積より
桁違いに大きな寸法になってしまう。したがって、光検
出素子の小型化を図ることができず、アレイ素子を形成
する場合には、高密度化の妨げとなる。Problems to be Solved by the Invention However, the direction of the signal current flowing through the conventional superconducting photodetector 53 is parallel to the substrate surface, and as is clear from FIG. This part is necessary to play the role of leading out the electrodes, and the size is an order of magnitude larger than the area of the sensitive part in the central part. Therefore, it is not possible to reduce the size of the photodetecting element, and when forming an array element, it becomes a hindrance to increasing the density.
そこで、本発明は、微小化を図ることができ、アレイ化
、特に２次元アレイ化する場合に高密度化を図ることが
できるようにし、更には集光効率の向上を図ることがで
きるようにした集光レンズ付光検出素子を提供しようと
するものである。Therefore, the present invention enables miniaturization, high density when forming an array, especially a two-dimensional array, and further improves light collection efficiency. It is an object of the present invention to provide a photodetecting element with a condensing lens.
問題点を解決するための手段
そして上記問題点を解決するための本発明の技術的な手
段は、内面に透明な受光電極を有し、若しくは受光電極
゛を兼用する集光レンズに超電導薄膜層が受光電極を介
し、若しくは直接膜けられ、この超電導薄膜層上に信号
出力電極が設けられたものである。Means for solving the problems and the technical means of the present invention for solving the above problems are to provide a superconducting thin film layer on the condensing lens that has a transparent light-receiving electrode on the inner surface or that also serves as the light-receiving electrode. is layered either through a light-receiving electrode or directly, and a signal output electrode is provided on this superconducting thin film layer.
作 用 上記技術的手段による作用は次のようになる。For production The effects of the above technical means are as follows.
すなわち、超電導薄膜層内には集光レンズ平面と平行な
面に粒界が形成され、いわゆるジョセフソン接合が形成
されているので、バイアス電圧な受光電極、若しくは受
光電極を兼用する集光レンズと信号出力電極との間に印
加すると、臨界温度以下で超電導薄膜層に形成されてい
るジョセフソン接合にトンネル電流が流れる。このトン
ネル接合の電流・電圧特性は、超電導薄膜層に光が照射
されると変化し、これを電圧変化、あるいは電流変化と
して取り出すことができる。このような構造の集光レン
ズ付光検出素子では、電流は超電導薄膜層の平面に垂直
に流れ、超電導薄膜層のほとんどの部分を有感部として
有効に利用することができる。また、集光レンズを用い
ているので、本来感度のない部分に入射する光がすべて
有感部に集光される。In other words, grain boundaries are formed in the superconducting thin film layer on a plane parallel to the plane of the condensing lens, forming a so-called Josephson junction, so that it can be used as a bias voltage light-receiving electrode or a condensing lens that also serves as a light-receiving electrode. When applied between the signal output electrode and the signal output electrode, a tunnel current flows through the Josephson junction formed in the superconducting thin film layer at a temperature below the critical temperature. The current/voltage characteristics of this tunnel junction change when the superconducting thin film layer is irradiated with light, and this can be extracted as a voltage change or current change. In a photodetecting element with a condenser lens having such a structure, current flows perpendicularly to the plane of the superconducting thin film layer, and most parts of the superconducting thin film layer can be effectively used as a sensitive part. Furthermore, since a condensing lens is used, all light incident on areas that are originally insensitive is condensed onto the sensitive area.
実施例
以下、本発明の実施例について図面を参照しながら説明
する。EXAMPLES Hereinafter, examples of the present invention will be described with reference to the drawings.
まず、本発明の第１実施例について説明する。First, a first embodiment of the present invention will be described.
第１図は本発明の第１実施例における集光レンズ付光構
出素子の断面とその動作のための回路図である。第１図
に示すようにサファイヤ製の集光レンズ１上に受光電極
２として透明な酸化インジウム薄膜がスパッタ蒸着され
、この受光電極２上に超電導薄膜層３としてペロプスカ
イト型酸化物超電導体ＢａＹＣｕ３０７−ｙがスパッタ
蒸着され、この超電導薄膜層３上に信号出力電極４とし
て白金がスパッタ蒸着されている。受光電極２はリード
取出しのために一部周辺が超電導薄膜層３より露出され
、この露出部に金が蒸着され、超音波ボンディングによ
りリード線５として金線が接続されている。同様に信号
出力電極４の隅部に金が蒸着され、超音波ボンディング
によりリード線６として、金線が接続されている。FIG. 1 is a cross-sectional view of an optical structure element with a condensing lens and a circuit diagram for its operation in a first embodiment of the present invention. As shown in FIG. 1, a transparent indium oxide thin film is sputter-deposited as a light receiving electrode 2 on a sapphire condensing lens 1, and a perovskite oxide superconductor BaYCu307- as a superconducting thin film layer 3 is formed on this light receiving electrode 2. y is sputter-deposited, and platinum is sputter-deposited on this superconducting thin film layer 3 as a signal output electrode 4. A part of the periphery of the light-receiving electrode 2 is exposed from the superconducting thin film layer 3 for lead extraction, gold is vapor-deposited on this exposed part, and a gold wire is connected as a lead wire 5 by ultrasonic bonding. Similarly, gold is deposited on the corners of the signal output electrode 4, and a gold wire is connected as a lead wire 6 by ultrasonic bonding.
このようにして構成された集光レンズ付光検出素子に負
荷抵抗９を直列に結線し、電源１０より電圧を印加すれ
ば、臨界温度以下で、光照射に応じた電圧出力信号をア
ース端子７、信号出力端子８から出力して測定すること
ができる。If a load resistor 9 is connected in series to the photodetecting element with a condensing lens configured in this manner and a voltage is applied from a power source 10, a voltage output signal corresponding to light irradiation will be output to the ground terminal 7 at a temperature below the critical temperature. , can be output from the signal output terminal 8 and measured.
このような構造の集光レンズ付光検出素子では、電流は
集光レンズ１の平面に垂直にカコれ、超電導薄膜層３の
ほとんどの部分を有感部として有効に利用することがで
き、しかも集光レンズ１を用いているので、本来感度の
ない部分に入射する光がすべて有感部に集光される。こ
こで、光が照射される側の受光電極２は光に対し、透明
でなければならない。また、裏面の信号出力電極４は光
に対して反射率が高いことが望ましい。すなわち、入射
光は透明な集光レンズ及び受光電極２を透過し、超電導
薄膜層３で十分吸収されるが、吸収されずに裏面の信号
出力電極４に到達した一部の光はほとんど反射され、再
び超電導薄膜層３に戻って吸収されることにより、光吸
収効率が向上し、感度向上に寄与する。In the photodetecting element with a condensing lens having such a structure, the current is deflected perpendicularly to the plane of the condensing lens 1, and most of the superconducting thin film layer 3 can be effectively used as a sensitive part. Since the condenser lens 1 is used, all the light incident on the originally insensitive part is focused on the sensitive part. Here, the light-receiving electrode 2 on the side to which the light is irradiated must be transparent to the light. Further, it is desirable that the signal output electrode 4 on the back surface has a high reflectance to light. That is, although the incident light passes through the transparent condenser lens and the light receiving electrode 2 and is sufficiently absorbed by the superconducting thin film layer 3, the part of the light that is not absorbed and reaches the signal output electrode 4 on the back surface is almost reflected. By returning to the superconducting thin film layer 3 and being absorbed again, the light absorption efficiency improves, contributing to improved sensitivity.
次に本発明の第２実施例について説明する。第２図は本
発明の第２実施例における集光レンズ付光検出素子の断
面とその動作のための回路を示している。本実施例にお
いては、主として上記第１実施例と異なる構成について
説明する。Next, a second embodiment of the present invention will be described. FIG. 2 shows a cross section of a photodetecting element with a condensing lens and a circuit for its operation in a second embodiment of the present invention. In this embodiment, mainly the configuration different from the first embodiment described above will be explained.
サファイヤ製の集光レンズ１は凸面が複数のりニアアレ
イ配列に形成され、超電導薄膜層３及び信号出力電極４
が集光レンズ１に対応してアレイ状に分離されて配列さ
れている。A condensing lens 1 made of sapphire has a plurality of convex surfaces formed in a linear array arrangement, and has a superconducting thin film layer 3 and a signal output electrode 4.
are separated and arranged in an array corresponding to the condenser lens 1.
本実施例においては、集光レンズ１のピッチ間隔を０．
１ｍｍとし、超電導薄膜層３及び信号出力電極４からな
る素子を０．０３ｍｍ平方とし、負荷抵抗９は各素子毎
に配置し、共通電源１０にて動作させた。信号出力端子
８は各素子毎に取り出すが、アース端子７は一本のみで
よい。受光電極２も各素子に共通でよいが、電圧はプラ
スに印加される。In this embodiment, the pitch interval of the condenser lens 1 is set to 0.
The element consisting of the superconducting thin film layer 3 and the signal output electrode 4 was 0.03 mm square, and a load resistor 9 was placed for each element, and the element was operated with a common power supply 10. Although the signal output terminal 8 is taken out for each element, only one ground terminal 7 is required. The light receiving electrode 2 may also be common to each element, but a positive voltage is applied thereto.
上記第２実施例によれば、ｏ、ｉｍｍピッチで１２８の
素子を有し、全長１３ ＋ｎｎ＋弱のりニアアレイ集光
レンズ付光検出素子を形成することができた。According to the second embodiment, it was possible to form a photodetecting element with a near array condensing lens having 128 elements with a pitch of o, imm, and a total length of 13 + nn + weakly linear.
次に本発明の第３実施例について説明する。第３図は本
発明の第３実施例における集光レンズ付光検出素子の断
面とその動作のための回路を示している。本実施例にお
いては、主として上記第２実施例と異なる構成について
説明する。Next, a third embodiment of the present invention will be described. FIG. 3 shows a cross section of a photodetecting element with a condensing lens and a circuit for its operation in a third embodiment of the present invention. In this embodiment, a structure different from that of the second embodiment described above will be mainly explained.
アレイ状の集光レンズ１はゲルマニウムにょυ形成し、
その電導性を利用して受光電極を兼用している。この場
合、ゲルマニウム２μｍより長波長の赤外線に透明であ
るので、赤外センサとして動作する。ゲルマニウム製の
集光レンズ１は屈折率が高く、反射損失を無視し得ない
ので、赤外入射側凸面には反射防止膜１）として硫化要
鉛薄膜を蒸着するが、本実施例では１０μｍの赤外線に
対して反射損失が最小になるようｎｄ＝２．５μｍとし
た（但し、ｎｄは光学的厚さで、ｎは硫化亜鉛の屈折率
、ｄは膜厚である。）負荷抵抗９は素子の抵抗より十分
大きくし、バイアス電流が一定のもとで、各素子の印加
電圧変化を信号として取り出した。本実施例では、受光
電極を兼用するアレイ状の集光レンズ１がアースになっ
ている。また、超電導薄膜層３にはＢａＰｂｏ、７Ｂｉ
ｏ、３０３を用いた。The array-shaped condensing lens 1 is made of germanium,
Utilizing its conductivity, it also serves as a light-receiving electrode. In this case, since germanium is transparent to infrared rays with wavelengths longer than 2 μm, it operates as an infrared sensor. Since the condenser lens 1 made of germanium has a high refractive index and reflection loss cannot be ignored, a thin lead sulfide film is deposited on the convex surface on the infrared incident side as an antireflection film 1). nd was set to 2.5 μm to minimize reflection loss for infrared rays (where nd is the optical thickness, n is the refractive index of zinc sulfide, and d is the film thickness).The load resistor 9 is the element The voltage applied to each element was taken out as a signal under a constant bias current. In this embodiment, the array-shaped condenser lens 1, which also serves as a light receiving electrode, is grounded. In addition, the superconducting thin film layer 3 contains BaPbo, 7Bi
o, 303 was used.
上記第３実施例によれば、０．１ｍｍピッチで１２８×
１２８の素子を有し、全長１３Ｘ１３ｍｍ平方弱の２次
元アレイ集光レンズ付赤外検出素子を形成することがで
きた。According to the third embodiment, 128× with a pitch of 0.1 mm
It was possible to form an infrared detection element with a two-dimensional array condenser lens having 128 elements and a total length of 13 x 13 mm square.
発明の効果
以上述べたように本発明によれば、内面に透明な受光電
極を有し、若しくは受光電極を兼用する集光レンズに受
光電極を介し、若しくは直接超電導薄膜層を設け、この
超電導薄膜層上に信号出方電極を設けている。これによ
り超電導薄膜層内には集光レンズ平面と平行な面に粒界
が形成され、いわゆるジョセフソン接合が形成されてい
る。そして電流は集光レンズ平面に垂直に流れるので、
超電導薄膜層の大部分を有感部として利用することがで
きる。しかも集光レンズを用いているので、光学的収差
が少ない条件で、素子部分に光を集めることかできる。Effects of the Invention As described above, according to the present invention, a superconducting thin film layer is provided through the light receiving electrode or directly on a condensing lens that has a transparent light receiving electrode on the inner surface or also serves as the light receiving electrode, and this superconducting thin film A signal output electrode is provided on the layer. As a result, grain boundaries are formed in the superconducting thin film layer on a plane parallel to the plane of the condenser lens, forming a so-called Josephson junction. And since the current flows perpendicular to the plane of the condenser lens,
Most of the superconducting thin film layer can be used as a sensitive part. Furthermore, since a condensing lens is used, light can be focused on the element portion under conditions with little optical aberration.
したがって、素子を微小化することができ、特に素子な
アレイ化する場合、その集積度を大幅に向上させること
ができ、しかも集光効率を高めることができる。Therefore, the elements can be miniaturized, and especially when arrayed, the degree of integration can be greatly improved, and the light collection efficiency can be increased.
第１図は本発明の第１実施例における集光レノ・′、゛
ズ付光検出素子の氏＝零ネ功動作のための回路劇示す図
、第２図は本発明の第２実施例における集で゛
光レンズ付光検出素子のｎ動作のためのＩｉ回路を示す
図、第３図は本発明の第３実施例における集光レンズ付
光検出素子の舛≠≠喚坤動作の′］′・；し
ための回路を示す図、第４図は従来の光検出素子゛の斜
視図である。
１）．・集光レンズ、２・・・受光電極、３・・・超電
導薄膜層、４．・・信号出力電極、７・・・アース端子
、８・・・信号出力端子、９・・・負荷抵抗、１０・・
・電源、１）・・・反射防止膜。
代理人の氏名 弁理士 中 尾敏 男 ほか１名第１図
第２図
第３図FIG. 1 is a diagram showing a circuit diagram for the successful operation of a photodetector element with condensing lenses ' and ' in a first embodiment of the present invention, and FIG. Figure 3 is a diagram showing an Ii circuit for n operation of a photodetecting element with a light lens in the third embodiment of the present invention. ]'.; FIG. 4 is a perspective view of a conventional photodetecting element. 1). - Condensing lens, 2... Light receiving electrode, 3... Superconducting thin film layer, 4. ...Signal output electrode, 7...Earth terminal, 8...Signal output terminal, 9...Load resistance, 10...
・Power supply, 1)...Anti-reflection film. Name of agent: Patent attorney Toshio Nakao and one other person Figure 1 Figure 2 Figure 3
Claims (4)
を兼用する集光レンズに超電導薄膜層が受光電極を介し
、若しくは直接設けられ、この超電導薄膜層上に信号出
力電極が設けられたことを特徴とする光検出素子。(1) A superconducting thin film layer is provided either through the light receiving electrode or directly on a condensing lens that has a transparent light receiving electrode on its inner surface or that also serves as the light receiving electrode, and a signal output electrode is provided on this superconducting thin film layer. A photodetecting element characterized by:
、超電導薄膜層及び信号出力電極が上記集光レンズに対
応して複数のアレイ状に分離配列されている特許請求の
範囲第１項記載の光検出素子。(2) Claim 1, wherein condenser lenses are formed in a plurality of arrays, and superconducting thin film layers and signal output electrodes are arranged separately in a plurality of arrays corresponding to the condenser lenses. The photodetecting element described.
い材料により形成されている特許請求の範囲第１項また
は第２項記載の光検出素子。(3) The photodetecting element according to claim 1 or 2, wherein the signal output electrode is formed of a material having a high reflectance for the light to be observed.
料により形成されている特許請求の範囲第１項ないし第
３項のいずれかに記載の光検出素子。(4) The photodetecting element according to any one of claims 1 to 3, wherein the condenser lens is made of a material that is transparent to infrared rays and has electrical conductivity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62175166A JPH01158323A (en) | 1987-07-14 | 1987-07-14 | Photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62175166A JPH01158323A (en) | 1987-07-14 | 1987-07-14 | Photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01158323A true JPH01158323A (en) | 1989-06-21 |
Family
ID=15991417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62175166A Pending JPH01158323A (en) | 1987-07-14 | 1987-07-14 | Photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01158323A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012104772A (en) * | 2010-11-15 | 2012-05-31 | Nippon Signal Co Ltd:The | Superconducting tunnel junction detector |
-
1987
- 1987-07-14 JP JP62175166A patent/JPH01158323A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012104772A (en) * | 2010-11-15 | 2012-05-31 | Nippon Signal Co Ltd:The | Superconducting tunnel junction detector |
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