JPH01155651U - - Google Patents
Info
- Publication number
- JPH01155651U JPH01155651U JP5288388U JP5288388U JPH01155651U JP H01155651 U JPH01155651 U JP H01155651U JP 5288388 U JP5288388 U JP 5288388U JP 5288388 U JP5288388 U JP 5288388U JP H01155651 U JPH01155651 U JP H01155651U
- Authority
- JP
- Japan
- Prior art keywords
- implantation
- injection
- dose
- platen
- setting value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002347 injection Methods 0.000 claims description 8
- 239000007924 injection Substances 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 1
Description
第1図はこの考案の一実施例の構成を示す概略
ブロツク図、第2図は注入条件設定器の動作を示
すフローチヤート、第3図はプラテンの各注入ス
テツプ毎の角度変化を示す概略図、第4図は従来
例の構成を示す概略図、第5図はプラテンの角度
変化を示す概略図、第6図および第7図はそれぞ
れイオンを注入すべき試料の断面図である。
1……カレントインテグレータ、2……エンド
ステーシヨンコントローラ、3……注入条件設定
器。
Fig. 1 is a schematic block diagram showing the configuration of an embodiment of this invention, Fig. 2 is a flowchart showing the operation of the injection condition setting device, and Fig. 3 is a schematic diagram showing the angle change of the platen for each injection step. , FIG. 4 is a schematic diagram showing the configuration of a conventional example, FIG. 5 is a schematic diagram showing changes in the angle of the platen, and FIGS. 6 and 7 are sectional views of a sample into which ions are to be implanted. 1...Current integrator, 2...End station controller, 3...Injection condition setting device.
Claims (1)
ズ量設定値に達したときに注入完了信号を発生す
るカレントインテグレータと、エンドステーシヨ
ン内の試料保持用プラテンの角度をプラテン角度
設定値に合わせて変更するエンドステーシヨンコ
ントローラと、ひとつの試料に対して順次実行す
べき複数の注入ステツプの各々におけるドーズ量
設定値とプラテン角度設定値との関係を定めた注
入条件を入力する注入条件入力部と、この注入条
件入力部によつて入力した注入条件を記憶する注
入条件記憶部と、初期および前記注入完了信号の
発生時に前記注入条件記憶部から次注入ステツプ
のドーズ量設定値およびプラテン角度設定値を読
み出し前記カレントインテグレータに対して前記
次注入ステツプのドーズ量設定値をセツトすると
ともに前記エンドステーシヨンコントローラに対
して前記次注入ステツプのプラテン角度設定値を
セツトする注入条件セツト部とを有する注入条件
設定器とを備えたイオン注入装置。 A current integrator that measures the dose to the sample and generates an injection completion signal when the dose reaches the set dose value, and changes the angle of the platen for holding the sample in the end station to match the set platen angle. an end station controller to perform the injection process, an injection condition input section for inputting injection conditions defining the relationship between the dose amount setting value and the platen angle setting value in each of a plurality of injection steps to be executed sequentially for one sample; an implantation condition storage section that stores the implantation conditions inputted by the implantation condition input section; and a dose amount set value and a platen angle set value for the next implantation step are read from the implantation condition storage section at the initial stage and when the implantation completion signal is generated. an implantation condition setter having an implantation condition setting section that sets a dose amount setting value for the next implantation step for the current integrator and a platen angle setting value for the next implantation step for the end station controller; An ion implanter equipped with
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5288388U JPH01155651U (en) | 1988-04-19 | 1988-04-19 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5288388U JPH01155651U (en) | 1988-04-19 | 1988-04-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01155651U true JPH01155651U (en) | 1989-10-25 |
Family
ID=31278878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5288388U Pending JPH01155651U (en) | 1988-04-19 | 1988-04-19 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01155651U (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61292845A (en) * | 1985-06-20 | 1986-12-23 | Sumitomo Electric Ind Ltd | Method and device for ion implantation |
-
1988
- 1988-04-19 JP JP5288388U patent/JPH01155651U/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61292845A (en) * | 1985-06-20 | 1986-12-23 | Sumitomo Electric Ind Ltd | Method and device for ion implantation |
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