JPH01160651U - - Google Patents
Info
- Publication number
- JPH01160651U JPH01160651U JP5823088U JP5823088U JPH01160651U JP H01160651 U JPH01160651 U JP H01160651U JP 5823088 U JP5823088 U JP 5823088U JP 5823088 U JP5823088 U JP 5823088U JP H01160651 U JPH01160651 U JP H01160651U
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- lens
- amplifier
- setting device
- threshold voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005856 abnormality Effects 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 238000010884 ion-beam technique Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
Description
第１図はこの考案の一実施例の構成を示すブロ
ツク図、第２図は従来のイオン注入装置の構成を
示す概略平面図である。
１……電圧設定器、２，３……増幅器、４……
Ｑレンズ電極、５，６……比較器、８……ビーム
コントローラ。
FIG. 1 is a block diagram showing the structure of an embodiment of this invention, and FIG. 2 is a schematic plan view showing the structure of a conventional ion implantation apparatus. 1... Voltage setting device, 2, 3... Amplifier, 4...
Q lens electrode, 5, 6... comparator, 8... beam controller.
Claims (1)
、このＱレンズ電極に印加するＱレンズ電圧を設
定する電圧設定器と、この電圧設定器からの設定
電圧を増幅して前記Ｑレンズ電極に印加する増幅
器と、前記電圧設定器の設定電圧に連動して変化
する上側閾値電圧と下側閾値電圧と前記増幅器の
出力電圧とを常時比較し、前記増幅器の出力電圧
が前記上側閾値電圧および下側閾値電圧の範囲か
ら外れた時にＱレンズ電圧異常検出信号を発生す
る比較器と、この比較器からのＱレンズ電圧異常
検出信号の入力に応答してイオン注入対象物への
イオンビームの照射を停止させるビームコントロ
ーラとを備えたイオン注入装置。 A Q lens electrode for converging the ion beam, a voltage setting device for setting the Q lens voltage applied to the Q lens electrode, and an amplifier for amplifying the set voltage from the voltage setting device and applying it to the Q lens electrode. The output voltage of the amplifier is constantly compared with the upper threshold voltage and the lower threshold voltage that change in conjunction with the set voltage of the voltage setting device, and the output voltage of the amplifier is set to the upper threshold voltage and the lower threshold voltage. A comparator that generates a Q lens voltage abnormality detection signal when the voltage is out of the range of An ion implanter equipped with a controller.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5823088U JPH076610Y2 (en) | 1988-04-27 | 1988-04-27 | Ion implanter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5823088U JPH076610Y2 (en) | 1988-04-27 | 1988-04-27 | Ion implanter |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01160651U true JPH01160651U (en) | 1989-11-08 |
| JPH076610Y2 JPH076610Y2 (en) | 1995-02-15 |
Family
ID=31284054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5823088U Expired - Lifetime JPH076610Y2 (en) | 1988-04-27 | 1988-04-27 | Ion implanter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH076610Y2 (en) |
-
1988
- 1988-04-27 JP JP5823088U patent/JPH076610Y2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH076610Y2 (en) | 1995-02-15 |