JPH01154569A - Solid-state image sensor - Google Patents
Solid-state image sensorInfo
- Publication number
- JPH01154569A JPH01154569A JP62312255A JP31225587A JPH01154569A JP H01154569 A JPH01154569 A JP H01154569A JP 62312255 A JP62312255 A JP 62312255A JP 31225587 A JP31225587 A JP 31225587A JP H01154569 A JPH01154569 A JP H01154569A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- shielding plate
- state image
- specific resistance
- plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000003384 imaging method Methods 0.000 claims description 24
- 230000005684 electric field Effects 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 239000000919 ceramic Substances 0.000 abstract description 6
- 239000004033 plastic Substances 0.000 abstract description 4
- 229920003023 plastic Polymers 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 3
- 229910001111 Fine metal Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は固体撮像装置に関し、特に固体撮像素子とキャ
ンプとの間に遮光板を備えた固体撮像装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a solid-state imaging device, and particularly to a solid-state imaging device including a light-shielding plate between a solid-state imaging device and a camp.
Ｃ従来の技術〕
従来、この種の固体撮像装置は、第１図及び第２図に示
すように、セラミック基板１上に半導体からなる固体撮
像素子２が固着され、この固体Ｉ最像素子２の電極２ａ
とセラミック基板１上に形成された配線電極１ａを金属
細線３により電気的に接続している。また、この固体撮
像素子２の上側には、斜め入射光や金属細線３からの反
射光のような不要の入射光が固体撮像素子の撮像領域２
ｂに入射しないように、撮像領域２ｂとほぼ等しい面積
の開口部を有する遮光板４が固定される。更に、この上
に少なくとも可視光に対して透明なキャップ５が固定さ
れ、前記固体撮像素子２を封止して固体撮像装置が形成
されていた。C. Prior Art] Conventionally, in this type of solid-state imaging device, as shown in FIGS. 1 and 2, a solid-state imaging device 2 made of a semiconductor is fixed on a ceramic substrate 1, and this solid-state imaging device 2 is electrode 2a of
and a wiring electrode 1a formed on the ceramic substrate 1 are electrically connected by a thin metal wire 3. Additionally, unnecessary incident light such as obliquely incident light and reflected light from the thin metal wire 3 is placed above the solid-state image sensor 2 in the imaging area 2 of the solid-state image sensor 2.
A light shielding plate 4 having an opening having an area approximately equal to that of the imaging region 2b is fixed so that the light does not enter into the imaging region 2b. Further, a cap 5 transparent to at least visible light is fixed thereon to seal the solid-state imaging device 2 to form a solid-state imaging device.
〔発明が解決しようとする問題点］
上述した従来の固体撮像装置では、固体撮像素子上の撮
像領域に不要な光が入射しないようにするための遮光板
４として、第５図に示すように金属薄体４ａの表面にク
ロムメツキ層４Ｃを施して表面を無光沢処理したもの、
若しくは耐熱性プラスチックを成形したものが広く用い
られていた。[Problems to be Solved by the Invention] In the conventional solid-state imaging device described above, as shown in FIG. A chromium plating layer 4C is applied to the surface of the thin metal body 4a to make the surface matte,
Alternatively, molded heat-resistant plastics were widely used.
しかしながら、上述の構成の遮光板では、クロムメツキ
ＪｉＪ４ｃが導電体として、またプラスチ・ンクが絶縁
体として夫々半導体からなる固体撮像素子２に対して近
接配置されることになるため、固体撮像素子２と遮光板
４の比抵抗値の差によって静電気が帯電して静電電界が
形成され易く、この静電気によって固体撮像素子の静電
耐圧が低下され易くなるという問題を有していた。However, in the light shielding plate configured as described above, the chrome plated JiJ4c is placed as a conductor and the plastic ink is placed as an insulator in close proximity to the solid-state image sensor 2 made of a semiconductor. The problem has been that static electricity is likely to be charged due to the difference in the specific resistance value of the light shielding plate 4, and an electrostatic electric field is likely to be formed, and the electrostatic withstand voltage of the solid-state image sensor is likely to be lowered by this static electricity.
本発明は、静電気の電界を緩和して固体撮像素子の静電
耐圧を向上することができる固体撮像装置を提供するこ
とを目的としている。An object of the present invention is to provide a solid-state imaging device that can improve the electrostatic withstand voltage of a solid-state imaging device by alleviating the electric field of static electricity.
〔問題点を解決するための手段］
本発明の固体撮像装置は、入射光を制限するために固体
撮像素子の上側に近接配置した遮光板の少なくとも表面
を比抵抗１０５〜１０７Ω・Ωの材質で構成することに
より、固体撮像素子と遮光板との間の静電電界を緩和し
て静電破壊を防止する構成としている。[Means for Solving the Problems] In the solid-state imaging device of the present invention, at least the surface of the light-shielding plate disposed close to the upper side of the solid-state imaging device is made of a material having a specific resistance of 105 to 107 Ω·Ω in order to limit incident light. With this configuration, the electrostatic electric field between the solid-state image sensor and the light shielding plate is relaxed to prevent electrostatic damage.
〔実施例］ 次に、本発明を図面を参照して説明する。〔Example] Next, the present invention will be explained with reference to the drawings.
第１図及び第２図に示したように、固体撮像装置はセラ
ミック基板１の上に固体撮像素子２が固定され、金属細
線３によってセラミック基板１の配線電極１ａと固体撮
像素子２の電極２ａが電気的に接続される。また、固体
撮像素子２の上側には撮像領域２ｂとほぼ等しい開口部
を有する遮光板４が固定され、更にこの上には透明なキ
ャンプ５が固定された構成とされている。As shown in FIGS. 1 and 2, in the solid-state imaging device, a solid-state imaging device 2 is fixed on a ceramic substrate 1, and a wiring electrode 1a of the ceramic substrate 1 and an electrode 2a of the solid-state imaging device 2 are connected by thin metal wires 3. are electrically connected. Further, a light shielding plate 4 having an opening substantially equal to the imaging area 2b is fixed above the solid-state image sensor 2, and a transparent camp 5 is further fixed on top of the light shielding plate 4.
ここで、前記遮光板４の一例としては、第３図に示すよ
うに、遮光板４自体が比抵抗１０５〜１０７Ω・ｃｍの
材質で形成されている。例えば、この比抵抗の材質とし
ては、耐熱性プラスチックにカーボン粉末を含有したも
のを用いることができる。Here, as an example of the light shielding plate 4, as shown in FIG. 3, the light shielding plate 4 itself is formed of a material having a specific resistance of 105 to 107 Ω·cm. For example, as the material for this specific resistance, heat-resistant plastic containing carbon powder can be used.
この構成では、含有するカーボンの量により容易に比抵
抗の値を調整することができ、また遮光板の形成もプレ
ス加工により容易に行える。With this configuration, the value of specific resistance can be easily adjusted by adjusting the amount of carbon contained, and the light shielding plate can also be easily formed by press working.
この構成によれば、遮光板４と、半導体からなる固体撮
像素子２とは夫々略等しい比抵抗値を有することになる
ため、両者の間に帯電による静電電界が生じることが少
なくなり、この静電電界による固体撮像素子２の静電破
壊を防止することができる。According to this configuration, the light shielding plate 4 and the solid-state image sensor 2 made of a semiconductor each have substantially the same resistivity value, so that an electrostatic electric field due to charging is less likely to occur between them. Electrostatic damage to the solid-state image sensor 2 due to an electrostatic electric field can be prevented.
第４図は遮光板の他の例であり、ここでは金属薄体４ａ
の表面に抵抗値１０’〜１０７Ω・印の皮膜層４ｂを形
成している。この皮膜層４ｂの材質としては、ＭｏＳ、
（硫化モリブデン）等を主成分とする塗料を用いること
ができる。FIG. 4 shows another example of a light shielding plate, in which a thin metal body 4a
A film layer 4b having a resistance value of 10' to 10<7 >[Omega] is formed on the surface of the film. The material of this film layer 4b includes MoS,
(Molybdenum sulfide) or the like can be used as a main component.
この構成では遮光板の素材として金属薄板が使用できる
ため、加工においてエツチング又はプレス加工により寸
法精度良く、また多量に生産できるという利点を有して
いる。また、被膜層に前記した材質を用いれば表面の黒
色処理及び比抵抗値の調整が同時に行えるという利点が
ある。In this configuration, since a thin metal plate can be used as the material for the light shielding plate, it has the advantage that it can be manufactured in large quantities with good dimensional accuracy by etching or pressing. Further, if the above-mentioned materials are used for the coating layer, there is an advantage that the surface blackening and the specific resistance value adjustment can be performed at the same time.
（発明の効果〕
以上説明したように本発明は、固体撮像素子の上側に近
接配置した遮光板の少なくとも表面を比抵抗１０５〜１
０７Ω・ｃｍの材質で構成しているので、固体撮像素子
と遮光板との間の静電電界を緩和し、その静電破壊を防
止することができる効果がある。(Effects of the Invention) As explained above, the present invention provides at least the surface of the light shielding plate disposed close to the upper side of the solid-state image sensor with a specific resistance of 105 to 1.
Since it is made of a material of 0.7 Ω·cm, it has the effect of relaxing the electrostatic electric field between the solid-state image sensor and the light shielding plate and preventing electrostatic damage.
第１図は本発明に関わる遮光板を備えた固体撮像装置の
断面図、第２図はその一部破断斜視図、第３図は本発明
の一実施例における遮光板の一部断面図、第４図は他の
実施例における遮光板の一部断面図、第５図は従来の遮
光板の一部断面図である。
１・・・セラミック基板、２・・・固体撮像素子、３・
・・金属細線、４・・・遮光板、４ａ・・・金属薄板、
４ｂ・・・皮膜層、４ｃ・・・クロムメツキ層、５・・
・キャップ。
第１図
第３図
第２図
第４図 第５図FIG. 1 is a cross-sectional view of a solid-state imaging device equipped with a light-shielding plate according to the present invention, FIG. 2 is a partially cutaway perspective view thereof, and FIG. 3 is a partial cross-sectional view of a light-shielding plate in an embodiment of the present invention. FIG. 4 is a partial cross-sectional view of a light shielding plate in another embodiment, and FIG. 5 is a partial cross-sectional view of a conventional light shielding plate. 1... Ceramic substrate, 2... Solid-state image sensor, 3...
... Thin metal wire, 4... Light shielding plate, 4a... Thin metal plate,
4b... Film layer, 4c... Chrome plating layer, 5...
·cap. Figure 1 Figure 3 Figure 2 Figure 4 Figure 5
Claims (1)
光板を近接配置した固体撮像装置において、前記遮光板
の少なくとも表面を比抵抗１０＾５〜１０＾７Ω・ｃｍ
の材質で構成したことを特徴とする固体撮像装置。(1) In a solid-state imaging device in which a light-shielding plate for restricting incident light is disposed close to the upper side of a solid-state imaging device, at least the surface of the light-shielding plate has a specific resistance of 10^5 to 10^7 Ω·cm.
A solid-state imaging device characterized in that it is constructed of a material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62312255A JPH01154569A (en) | 1987-12-11 | 1987-12-11 | Solid-state image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62312255A JPH01154569A (en) | 1987-12-11 | 1987-12-11 | Solid-state image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01154569A true JPH01154569A (en) | 1989-06-16 |
Family
ID=18027035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62312255A Pending JPH01154569A (en) | 1987-12-11 | 1987-12-11 | Solid-state image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01154569A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087964A (en) * | 1989-10-31 | 1992-02-11 | Mitsubishi Denki Kabushiki Kaisha | Package for a light-responsive semiconductor chip |
| EP1715524A3 (en) * | 1996-05-17 | 2008-01-23 | Sony Corporation | Solid-state imaging apparatus |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6173368A (en) * | 1984-09-18 | 1986-04-15 | Victor Co Of Japan Ltd | Solid-state image pickup device |
| JPS6284555A (en) * | 1985-10-08 | 1987-04-18 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
-
1987
- 1987-12-11 JP JP62312255A patent/JPH01154569A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6173368A (en) * | 1984-09-18 | 1986-04-15 | Victor Co Of Japan Ltd | Solid-state image pickup device |
| JPS6284555A (en) * | 1985-10-08 | 1987-04-18 | Fuji Electric Co Ltd | Semiconductor integrated circuit device |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5087964A (en) * | 1989-10-31 | 1992-02-11 | Mitsubishi Denki Kabushiki Kaisha | Package for a light-responsive semiconductor chip |
| EP1715524A3 (en) * | 1996-05-17 | 2008-01-23 | Sony Corporation | Solid-state imaging apparatus |
| US8098309B2 (en) | 1996-05-17 | 2012-01-17 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
| US8564702B2 (en) | 1996-05-17 | 2013-10-22 | Sony Corporation | Solid-state imaging apparatus and camera using the same |
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