JPS63293456A - Gas sensor - Google Patents
Gas sensorInfo
- Publication number
- JPS63293456A JPS63293456A JP12792587A JP12792587A JPS63293456A JP S63293456 A JPS63293456 A JP S63293456A JP 12792587 A JP12792587 A JP 12792587A JP 12792587 A JP12792587 A JP 12792587A JP S63293456 A JPS63293456 A JP S63293456A
- Authority
- JP
- Japan
- Prior art keywords
- thermistor
- electrode
- insulator
- temperature
- gas sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 6
- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 150000002736 metal compounds Chemical class 0.000 abstract description 2
- 230000020169 heat generation Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 18
- 230000035945 sensitivity Effects 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- -1 counter electrode Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 239000002737 fuel gas Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000003905 indoor air pollution Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は例えば燃料用ガスの漏れ検知、有毒・有害ガス
の発生、室内の空気汚染感知等に用いられるガスセンサ
に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Field of Application) The present invention relates to a gas sensor used for, for example, detecting leakage of fuel gas, generation of toxic/noxious gas, and sensing indoor air pollution.
（従来の技術）
第３図は従来のガスセンサを示し、第３図（ａ）は表面
図、第３図（ｂ）は第３図（ａ）のＩ−Ｉ線断面図、第
３図（Ｃ）は裏面図である。(Prior Art) Fig. 3 shows a conventional gas sensor, Fig. 3(a) is a surface view, Fig. 3(b) is a sectional view taken along the line I-I of Fig. 3(a), and Fig. C) is a back view.
即ち、ジルコニア基板１の裏面には白金およびタングス
テンの混合物からなる発熱体２が設けられ。That is, a heating element 2 made of a mixture of platinum and tungsten is provided on the back surface of the zirconia substrate 1.
前記基板１の表面には金の対向電極３が設けられ。A counter electrode 3 made of gold is provided on the surface of the substrate 1 .
その上にガス感応体４が膜状に形成される。A gas sensitive body 4 is formed thereon in the form of a film.
前記ガス感応体４としては金属酸化物半導体を用いたガ
スセンサの例が数多く提案されている。Many examples of gas sensors using metal oxide semiconductors as the gas sensitive body 4 have been proposed.
例えば、酸化スズ、酸化インジウムなどのｎ型半導体を
用いた場合、還元性ガスとの接触によりその抵抗が減少
することを利用してガスを検知する。For example, when an n-type semiconductor such as tin oxide or indium oxide is used, the gas is detected by utilizing the fact that its resistance decreases upon contact with a reducing gas.
しかし、金属酸化物半導体が還元性ガスとの接触により
抵抗を変化させるためには、半導体を通常２００〜５０
０℃の高温に保持しておく必要があるので、ガス感応体
４は発熱体２の併用により上記の温度にて使用する。発
熱体２としては０例えば白金およびタングステンの混合
物をペースト状にして印刷し焼成したものが提案されて
いる。However, in order for a metal oxide semiconductor to change its resistance upon contact with a reducing gas, it is necessary to
Since it is necessary to maintain the temperature at a high temperature of 0° C., the gas sensitive body 4 is used in combination with the heating element 2 at the above temperature. As the heating element 2, it has been proposed to use a mixture of platinum and tungsten, for example, printed in paste form and fired.
しかし、いずれにせよ従来用いられている発熱体は
（１）発熱体に印加する電圧の変動により素子温度も変
動する。However, in any case, in the conventionally used heating elements, (1) the element temperature fluctuates due to fluctuations in the voltage applied to the heating element.
（２）雰囲気温度や空気流の変動によっても素子温度が
変動する。(2) The element temperature also fluctuates due to fluctuations in ambient temperature and airflow.
（３）発熱体の膜厚を均一に形成することが困難である
ため８発熱体形成プロセスにともなう発熱体の電気抵抗
のばらつきにより素子温度もばらつく。(3) Since it is difficult to form the heating element with a uniform thickness, the element temperature also varies due to variations in the electrical resistance of the heating element during the process of forming the heating element.
等の欠点を有しており、したがってガス感応特性も一定
でなく、ドリフトやばらつきが避けられなかった。Therefore, the gas sensitivity characteristics were not constant, and drift and variations were unavoidable.
（発明が解決しようとする問題点）
本発明は、従来の抵抗体からなる発熱体を用いたガスセ
ンサが種々の外部条件によって素子温度が変化しガス感
応特性も変化するという問題点に鑑みてなされたもので
１種々の外部条件によって素子湿度が影響を受けず９発
熱体形成プロセスにともなう発熱体の電気抵抗のばらつ
きという問題を回避して素子温度のばらつきのないガス
センサを提供することを目的とする。(Problems to be Solved by the Invention) The present invention has been made in view of the problem that the element temperature of a conventional gas sensor using a heating element made of a resistor changes depending on various external conditions, and the gas sensitivity characteristics also change. The purpose of the present invention is to provide a gas sensor in which the element humidity is not affected by various external conditions, and the element temperature does not vary by avoiding the problem of variation in electrical resistance of the heating element due to the process of forming the heating element. do.
［発明の構成］
（問題点を解決するための手段と作用）本発明は上記目
的を達成するために、正の温度係数を持つサーミスタ（
ＰＴＣサーミスタ）上に、絶縁して対向電極とガス感応
体を設けたことを特徴とするもので、印加電圧、雰囲気
ｍ度、空気流等の外部条件に影響を受けず０発熱体形成
プロセスにともなう発熱体の電気抵抗のばらつきという
問題を回避したものである。[Structure of the invention] (Means and effects for solving the problems) In order to achieve the above object, the present invention uses a thermistor (
It is characterized by an insulated counter electrode and a gas sensitive body provided on top of the PTC thermistor, making it possible to form a zero heating element without being affected by external conditions such as applied voltage, ambient temperature, and air flow. This avoids the problem of variations in electrical resistance of the heating element.
（実施例） 以下図面を参照して本発明の実施例を詳細に説明する。(Example) Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は本発明の一実施例を示し、第１図（ａ）は表面
図、第１図（ｂ）は側面図、第１図（Ｃ）は分解斜視図
である。即ち、動作温度３００℃のＰＴＣサーミスタ１
１にはサーミスタ電極１２．１３が設けられ、このサー
ミスタ電極１２．１３にはサーミスタ電極端子１４．１
５が接続される。前記サーミスタ電極１２の上面にはシ
リコンレジネートを含むペーストにてシリカの絶縁体１
６が膜状に形成される。前記絶縁体１６の上面には有機
金属化合物を含むペーストを印刷し、焼成して金の対向
電極１７が形成され、この絶縁物１６及び対向電極１７
の上面にはスズレジネートとニオブレジネートの混合物
（モル比１００：１）よりなる有機金属化合物を含むペ
ーストを印刷し、焼成して金ｌ１ｌＲ化物半導体からな
るガス感応体１８が膜状に形成される。前記絶縁体１６
．対向電極１７及び金属酸化物半導体よりなるガス感応
体１８の焼成は、原料が有機金属化合物であるため、４
００℃という低い温度で行うことができる。したがって
、ＰＴＣサーミスタ１１にもほとんど損傷を与えない。FIG. 1 shows an embodiment of the present invention, in which FIG. 1(a) is a surface view, FIG. 1(b) is a side view, and FIG. 1(C) is an exploded perspective view. That is, PTC thermistor 1 with an operating temperature of 300°C
1 is provided with a thermistor electrode 12.13, and this thermistor electrode 12.13 is provided with a thermistor electrode terminal 14.1.
5 is connected. The upper surface of the thermistor electrode 12 is covered with a silica insulator 1 using a paste containing silicon resinate.
6 is formed into a film shape. A paste containing an organometallic compound is printed on the upper surface of the insulator 16 and fired to form a gold counter electrode 17.
A paste containing an organometallic compound made of a mixture of tin resinate and niobresinate (molar ratio 100:1) is printed on the upper surface and baked to form a gas sensitive body 18 made of a gold l1lR compound semiconductor in the form of a film. . The insulator 16
．． Since the raw material is an organometallic compound, the counter electrode 17 and the gas sensitive body 18 made of a metal oxide semiconductor are fired.
It can be carried out at temperatures as low as 00°C. Therefore, the PTC thermistor 11 is also hardly damaged.
前記ＰＴＣサーミスタ１１は例えばチタン酸バリウムと
チタン酸鉛との複合酸化物からなるものであり、温度が
上昇すると電気抵抗が増大し、所定温度で急激に抵抗が
大きくなって電流を抑制して発熱を抑制する自己制御発
熱体として機能する。The PTC thermistor 11 is made of, for example, a composite oxide of barium titanate and lead titanate, and as the temperature rises, the electrical resistance increases, and at a predetermined temperature, the resistance suddenly increases to suppress the current and generate heat. functions as a self-regulating heating element that suppresses
第２図は本発明に係る発熱体（ＰＴＣサーミスタ１１）
に印加する電圧と素子温度、エタノールに対する感度（
空気中抵抗をエタノール雰囲気中抵抗で除したｔｉｌｌ
）との関係を従来と比較して示したものである。第２図
中、イは本発明実施例の素子温度０口は本発明実施例の
感度、ハは従来例の素子温度、二は従来例の感度である
。第２図より本発明の実施例においては、素子の特性が
電圧にほとんど影響されないことがわかる。Figure 2 shows a heating element (PTC thermistor 11) according to the present invention.
Voltage applied to, element temperature, sensitivity to ethanol (
Till the resistance in air divided by the resistance in ethanol atmosphere
) is shown in comparison with the conventional method. In FIG. 2, A is the element temperature of the embodiment of the present invention, 0 is the sensitivity of the embodiment of the invention, C is the element temperature of the conventional example, and 2 is the sensitivity of the conventional example. It can be seen from FIG. 2 that in the embodiment of the present invention, the characteristics of the device are hardly affected by the voltage.
［発明の効果］
以上述べたように本発明によれば、ＰＴＣサーミスタ上
にガス感応体を設けることにより、印加電圧、雰囲気温
度、空気流等の外部条件によって影響を受けず０発熱体
形成プロセスにともなう発熱体の電気抵抗のばらつきと
いう問題を回避した。[Effects of the Invention] As described above, according to the present invention, by providing a gas sensitive body on a PTC thermistor, a zero heating element formation process is possible without being affected by external conditions such as applied voltage, ambient temperature, and air flow. This avoids the problem of variations in the electrical resistance of the heating element.
特性の安定したばらつきの少ないすぐれたがスセンサを
提供することができる。特に、ＰＴＣサーミスタ上に形
成する絶縁体、対向電極、ガス感応体を有驕金属化合物
の熱分解によって得るならば。An excellent gas sensor with stable characteristics and little variation can be provided. Particularly, if the insulator, counter electrode, and gas sensitive body formed on the PTC thermistor are obtained by thermal decomposition of a fertile metal compound.
比較的低温の熱処理ですむためサーミスタの損傷を防ぐ
ことができる。Damage to the thermistor can be prevented since heat treatment at a relatively low temperature is required.
第１図は本発明の一実施例を示す構成図、第２図は本発
明ガスセンサの印加電圧と素子温度、感度特性との関係
の一例を従来と比較して示す特性図、第３図は従来のガ
スセンサを示す構成図である。
１１・・・ＰＴＣサーミスタ、１６・・・絶縁体。
１７・・・対向電極、１８・・・ガス感応体。
出願人代理人 弁理士 鈴江武彦
（α）
第１図
第２図
（ａ）
（ｂ）
（ｃ）
第３図Fig. 1 is a configuration diagram showing an embodiment of the present invention, Fig. 2 is a characteristic diagram showing an example of the relationship between applied voltage, element temperature, and sensitivity characteristics of the gas sensor of the present invention in comparison with a conventional one. FIG. 2 is a configuration diagram showing a conventional gas sensor. 11...PTC thermistor, 16...Insulator. 17... Counter electrode, 18... Gas sensitive body. Applicant's agent Patent attorney Takehiko Suzue (α) Figure 1 Figure 2 (a) (b) (c) Figure 3
Claims (4)
向電極とガス感応体を設けたことを特徴とするガスセン
サ。(1) A gas sensor characterized in that a thermistor having a positive temperature coefficient is provided with an insulated counter electrode and a gas sensitive body.
ス感応体を用いることを特徴とする特許請求の範囲１項
記載のガスセンサ。(2) The gas sensor according to claim 1, characterized in that a gas sensitive body made of a metal oxide semiconductor is used as the gas sensitive body.
トを印刷し、焼成して設けたガス感応体を用いることを
特徴とする特許請求の範囲第１項記載のガスセンサ。(3) The gas sensor according to claim 1, wherein the gas sensor is a gas sensor prepared by printing and firing a paste containing an organometallic compound.
を印刷し、焼成して設けた導体よりなる対向電極を用い
ることを特徴とする特許請求の範囲第１項記載のガスセ
ンサ。(4) The gas sensor according to claim 1, characterized in that the counter electrode is made of a conductor formed by printing and firing a paste containing an organometallic compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12792587A JPS63293456A (en) | 1987-05-27 | 1987-05-27 | Gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12792587A JPS63293456A (en) | 1987-05-27 | 1987-05-27 | Gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63293456A true JPS63293456A (en) | 1988-11-30 |
Family
ID=14972024
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12792587A Pending JPS63293456A (en) | 1987-05-27 | 1987-05-27 | Gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63293456A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273779A (en) * | 1991-12-09 | 1993-12-28 | Industrial Technology Research Institute | Method of fabricating a gas sensor and the product fabricated thereby |
| WO1994015204A1 (en) * | 1992-12-24 | 1994-07-07 | Robert Bosch Gmbh | Gas sensor operating using thermal-conductivity measurements |
| DE202007019578U1 (en) | 2006-07-19 | 2014-02-20 | Ge Healthcare Bio-Sciences Ab | Chromatography columns and systems |
-
1987
- 1987-05-27 JP JP12792587A patent/JPS63293456A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5273779A (en) * | 1991-12-09 | 1993-12-28 | Industrial Technology Research Institute | Method of fabricating a gas sensor and the product fabricated thereby |
| WO1994015204A1 (en) * | 1992-12-24 | 1994-07-07 | Robert Bosch Gmbh | Gas sensor operating using thermal-conductivity measurements |
| DE202007019578U1 (en) | 2006-07-19 | 2014-02-20 | Ge Healthcare Bio-Sciences Ab | Chromatography columns and systems |
| US8702983B2 (en) | 2006-07-19 | 2014-04-22 | Ge Healthcare Bio-Sciences Ab | Chromatography columns, systems and methods |
| US9527009B2 (en) | 2006-07-19 | 2016-12-27 | Ge Healthcare Bioprocess R&D Ab | Chromatography columns, systems and methods |
| US10048235B2 (en) | 2006-07-19 | 2018-08-14 | Ge Healthcare Bioprocess R&D Ab | Chromatography columns, systems and methods |
| US10928365B2 (en) | 2006-07-19 | 2021-02-23 | Cytiva Bioprocess R&D Ab | Chromatography columns, systems and methods |
| US11927573B2 (en) | 2006-07-19 | 2024-03-12 | Cytiva Bioprocess R&D Ab | Chromatography columns, systems and methods |
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