JPH01154050A - Pattern forming method - Google Patents
Pattern forming methodInfo
- Publication number
- JPH01154050A JPH01154050A JP62312659A JP31265987A JPH01154050A JP H01154050 A JPH01154050 A JP H01154050A JP 62312659 A JP62312659 A JP 62312659A JP 31265987 A JP31265987 A JP 31265987A JP H01154050 A JPH01154050 A JP H01154050A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- upper layer
- pattern
- layer thin
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000010409 thin film Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001020 plasma etching Methods 0.000 claims abstract description 13
- 229920000642 polymer Polymers 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000005530 etching Methods 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910001882 dioxygen Inorganic materials 0.000 claims abstract description 9
- -1 olefin sulfone Chemical class 0.000 claims abstract description 8
- 229920000620 organic polymer Polymers 0.000 claims abstract description 6
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 claims abstract description 5
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- 230000005670 electromagnetic radiation Effects 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 239000000126 substance Substances 0.000 claims 1
- 238000001035 drying Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 53
- 239000010408 film Substances 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 4
- 239000004926 polymethyl methacrylate Substances 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920002223 polystyrene Polymers 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229920002102 polyvinyl toluene Polymers 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 229920001596 poly (chlorostyrenes) Polymers 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920005573 silicon-containing polymer Polymers 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/075—Silicon-containing compounds
- G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、半導体装置、マスク等の製造工程に適用され
るパターン形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a pattern forming method applied to the manufacturing process of semiconductor devices, masks, etc.
（従来の技術）
高密度集積回路、高速半導体素子、光部品等の製造に際
しては、微細加工技術として主に波長が４３６〜２４８
ｎ−の光によるリソグラフィ技術が採用されている。か
かるリソグラフィ技術は、基板上に単層又は多層レジス
ト膜を形成し、このレジスト膜に光を選択的に照射する
露光を行なった後、水溶液又は有機溶媒を用いて現像処
理及びリンス処理を施という湿式処理によってレジスト
パターンを形成する方法である。なお、多層レジスト膜
の場合には上層パターンをマスクとして下層レジスト膜
を更に酸素ガスによる反応性イオンエツチング（ＲＩＥ
）法を用いてエツチングして上層パターンを下層レジス
ト膜に転写する方法が行われる。(Conventional technology) When manufacturing high-density integrated circuits, high-speed semiconductor devices, optical components, etc., microfabrication technology is mainly used for wavelengths of 436 to 248.
A lithography technique using n- light is employed. Such lithography technology involves forming a single-layer or multi-layer resist film on a substrate, exposing the resist film to selective irradiation with light, and then developing and rinsing using an aqueous solution or an organic solvent. This is a method of forming a resist pattern by wet processing. In the case of a multilayer resist film, the lower resist film is further subjected to reactive ion etching (RIE) using oxygen gas using the upper layer pattern as a mask.
) is used to transfer the upper layer pattern to the lower resist film by etching.
しかしながら、上述したりソグラフィ技術では現像又は
リンス工程において水溶液や有機溶媒を使用する湿式処
理が不可欠であるため、現像液の温度、組成及び現像時
間等のプロセス条件を厳密に制御しなければならない。However, in the above-mentioned lithography technology, wet processing using an aqueous solution or an organic solvent is essential in the development or rinsing process, so process conditions such as the temperature, composition, and development time of the developer must be strictly controlled.
また、現像液中のダストによる欠陥が生じやすいため、
現像液のダストレベルも相当厳密に制御する必要がある
。その結果、パターン形成工程が極めて繁雑になり、し
かも欠陥が発生し易いという聞届があった。In addition, since defects are likely to occur due to dust in the developer,
Developer dust levels also need to be controlled fairly closely. As a result, it has been reported that the pattern forming process becomes extremely complicated and defects are likely to occur.
このようなことから、湿式の現像工程を省略するリング
ラフィ技術として例えばポリメチルメタクリレート（Ｐ
ＭＭＡ）を短波長のエキシマレーザでパターン状に照射
し、レジストの照射部分を直接除去してパターン形成を
行なう方法がＲｌＳ ｒｉｎｖａｓａｎ ａｎｄ Ｖ
、 Ｍａｙｎｅ −Ｂａｎｔｏｎ 、 Ａｐｐｌ 。For this reason, for example, polymethyl methacrylate (P
RlS rinvasan and V
, Mayne-Banton, Appl.
Ｐｈｙｓ 、 Ｌｅｔｔ 、 ４１．５７８ （１
９Ｈ）に報告されている。しかしながら、かかる方法で
はＰＭＭＡレジストをかなり薄膜化しなければサブミク
ロン水準の微細パターンを形成できないため、高密度集
積回路の微細加工に必要な高アスペクト比の微細パター
ンの形成が困難であった。こうしたことから、前記ＰＭ
ＭＡレジストを二層レジストプロセスの上層レジストと
して利用として高アスペクト比のパターンを形成するこ
とが考えられる。しかしながら、該ＰＭＭＡレジストは
耐酸素ＲＩＥ性を有さないため、該ＰＭＭＡの上層パタ
ーンをマスクとして下層レジストを酸素ＲＩＥ法でエツ
チング、転写することができず、実質的に二層レジスト
プロセスに適用できない。Phys, Lett, 41.578 (1
9H). However, with this method, it is not possible to form submicron-level fine patterns unless the PMMA resist is considerably thinned, making it difficult to form fine patterns with high aspect ratios required for microfabrication of high-density integrated circuits. For these reasons, the PM
It is conceivable to form a pattern with a high aspect ratio by using MA resist as an upper layer resist in a two-layer resist process. However, since the PMMA resist does not have oxygen RIE resistance, the lower resist cannot be etched and transferred by oxygen RIE using the upper layer pattern of the PMMA as a mask, and it cannot be practically applied to the two-layer resist process. .
（発明が解決しようとする問題点）
本発明は、上記従来の問題点を解決するためになされた
もので、湿式の現像工程を省略したドライプロセスによ
って高アスペクト比の微細パターンを形成し得るパター
ン形成方法を提供しようとするものである。(Problems to be Solved by the Invention) The present invention has been made in order to solve the above-mentioned conventional problems. The purpose of this paper is to provide a method for forming the same.
［発明の構成］
（問題点を解決するための手段）
本発明は、基板上に有機高分子からなる下層薄膜及び下
記一般式（１）にて表されるシリコン含有オレフィンス
ルフォン系高分子の１種又は２以上からなる上層薄膜を
順次形成する工程と、この上層薄膜に波長３０００−以
下の電磁放射線をパターン状に照射し、該薄膜の照射部
分を選択的に除去して微細な上層パターンを形成する工
程と、この上層パターンをマスクとして酸素ガスによる
反応性イオンエツチング法により下層薄膜を選択的に異
方性エツチングして上層パターンを下層薄膜に転写する
工程とを具備したことを特徴とするパターン形成方法で
ある。[Structure of the Invention] (Means for Solving the Problems) The present invention provides a lower thin film made of an organic polymer on a substrate and a silicon-containing olefin sulfone polymer represented by the following general formula (1). A step of sequentially forming an upper layer thin film consisting of a seed or two or more, irradiating this upper layer thin film with electromagnetic radiation having a wavelength of 3000 nm or less in a pattern, and selectively removing the irradiated portion of the thin film to form a fine upper layer pattern. and a step of selectively anisotropically etching the lower layer thin film using the upper layer pattern as a mask using a reactive ion etching method using oxygen gas to transfer the upper layer pattern to the lower layer thin film. This is a pattern forming method.
Ｒ（１）
但し、式中のＲはシリコン原子を有するアルキル基を示
す。R(1) However, R in the formula represents an alkyl group having a silicon atom.
上記基板としては、例えば不純物をドープしたシリコン
基板単独、又はこのシリコン基板を母材として酸化シリ
コン層を介して多結晶シリコン膜やＡＩｓＭｏなどの金
属膜を被覆したものなどの半導体基板、ガリウム砒素な
どの化合物半導体基板、透明ガラス板上にクロム膜や酸
化クロム膜を単独もしくは積層して被覆したマスク基板
等を挙げることができる。Examples of the above-mentioned substrate include a single silicon substrate doped with impurities, a semiconductor substrate such as one in which this silicon substrate is used as a base material and is coated with a polycrystalline silicon film or a metal film such as AIsMo via a silicon oxide layer, gallium arsenide, etc. Examples include a compound semiconductor substrate, a mask substrate in which a transparent glass plate is coated with a chromium film or a chromium oxide film alone or in a stacked manner.
上記下層薄膜の形成に用いられる有機高分子は、ｓｌ、
Ｇｏ −Ｓｎ ｓ Ｆｃ等の金属原子を含まない通常の
有機高分子である。具体的には、東京応化社製の０ＦＰ
Ｒ−８００、ヘキスト社製のＡＺ−２４００などのノボ
ラック系フォトレジスト、又はポリスチレン、ポリビニ
ルトルエン、クロロメチル化ポリスチレン、ポリアリル
スチレン、ポリクロロスチレン、塩素化ポリスチレン、
塩素化ポリビニルトルエン、塩素化ポリジメチルスチレ
ン、ポリビニルフェノール、ポリイソプロペニルフェノ
ールなどのスチレン系高分子を主成分とするレジスト、
或いはポリイミド、ポリビニルナフタレン、クロロメチ
ル化ポリビニルナフタレン、ポリビニルピリジン、ポリ
ビニルカルバゾールなどのポリマーを主成分とするレジ
スト等を使用することができる。The organic polymer used to form the lower layer thin film is sl,
It is a normal organic polymer that does not contain metal atoms, such as Go-Sn s Fc. Specifically, 0FP manufactured by Tokyo Ohka Co., Ltd.
R-800, novolac photoresist such as Hoechst AZ-2400, or polystyrene, polyvinyltoluene, chloromethylated polystyrene, polyallylstyrene, polychlorostyrene, chlorinated polystyrene,
Resists whose main components are styrenic polymers such as chlorinated polyvinyltoluene, chlorinated polydimethylstyrene, polyvinylphenol, and polyisopropenylphenol;
Alternatively, a resist whose main component is a polymer such as polyimide, polyvinylnaphthalene, chloromethylated polyvinylnaphthalene, polyvinylpyridine, or polyvinylcarbazole can be used.
上記一般式（１）のオレフィンスルフォン系高分子に導
入されるＲであるシリコン含有アルキル基としては、例
えば−８ｉ （ＣＨ３） ３、−ＣＨ２−８１（ＣＨ３
） ３ 、 −（ＣＨ２） ２ −８ｉ （Ｃ１
１３） ３ 、 −５ｔ（ＣＨ３） ２ Ｓｉ
（ＣＨ３） ３ 、 −ＣＩＩ２ −３ｌ （Ｃ
Ｈ３） ２Ｓｌ （Ｃ１１３） ３ 、 −（
ＣＨ２） ２ −３１ （Ｃ１１３） ２］
（ＣＨ３） ３ 、 −８１ （ＣＩＩ３
） ２ ＣＨ２Ｓｉ （ＣＨ３） ３ 、−９
１ （ＣＨ３） ２ （ＣＨ２） ２ Ｓｌ （ＣＬ
） ３等を挙げることができる。Examples of the silicon-containing alkyl group R introduced into the olefin sulfone polymer of general formula (1) above include -8i (CH3) 3, -CH2-81 (CH3
) 3 , -(CH2) 2 -8i (C1
13) 3, -5t(CH3)2Si
(CH3) 3 , -CII2 -3l (C
H3) 2Sl (C113) 3, -(
CH2) 2 -31 (C113) 2]
(CH3) 3, -81 (CII3
) 2 CH2Si (CH3) 3 , -9
1 (CH3) 2 (CH2) 2 Sl (CL
) 3 etc. can be mentioned.
上記一般式（１）にて表される高分子の分子量は、特に
制限されないが、塗膜性等の実用性の点から、３０００
〜１０６の範囲することが望ましい。また、かかる高分
子のシリコン含を率はその含有率を低くし過ぎると下層
薄膜のエツチングを行なう時の耐酸素ＲＩＥ性を充分に
高められないことから、７重量％以上にすることが好ま
しい。The molecular weight of the polymer represented by the above general formula (1) is not particularly limited, but from the viewpoint of practicality such as coating properties, 3000
It is desirable to range from 106 to 106. Further, the silicon content of the polymer is preferably 7% by weight or more, since if the silicon content is too low, the oxygen RIE resistance during etching of the underlying thin film cannot be sufficiently enhanced.
上記波長３００ ｎｍ以下の電磁放射線としては、例え
ばＫｒＦエキシマレーザ（波長２４８ ｎｍ）、ＡｒＦ
エキシマレーザ（波長１９３ ｎｆｆ１） 、Ｆ２エキ
シマレーザ（波長１５３ ｎｍ）又はシンクロトロン放
射光から得られる波長５０〜２００ ｎｍの真空紫外線
、或いは波長５人〜５０ｎｍの軟Ｘ線等を挙げることが
できる。Examples of the electromagnetic radiation with a wavelength of 300 nm or less include KrF excimer laser (wavelength 248 nm), ArF
Eximer laser (wavelength 193nff1), F2 excimer laser (wavelength 153 nm), vacuum ultraviolet rays with a wavelength of 50 to 200 nm obtained from synchrotron radiation, or soft X-rays with a wavelength of 5 to 50 nm can be used.
（作用）
本発明によれば、特定の高分子中により上層薄膜を形成
する二層レジストプロセスを採用することによって湿式
の現像処理工程を省略でき、かつ高アスペクト比の微細
なレジストパターンの形成が可能となる。即ち、上記一
般式（Ｉ）で表されるシリコン含をオレフィンスルフォ
ン系高分子を有機高分子からなる下層薄膜上に上層薄膜
（厚さ０．１〜０．５μｍ）として形成するため、波長
３００ ｎｍ以下の電離放射線の選択的な照射すること
によって、照射部分が選択的に除去されれて容易にサブ
ミクロン水準の微細でかつ耐酸素ＲＩＥ性に優れた上層
パターンを形成できる。その結果、該上層パターンをマ
スクとして下層薄膜を酸素ガスによるＲＩＥ法で異方性
エツチングを行なうことによって上層パターンを下層薄
膜に忠実に転写できるため、現像処理工程を省略したプ
ロセスで高アスペクト比の微細パターンの形成が可能と
なる。また、こうした高アスペクト比のパターンをマス
クとして露出する基板部分を任意のエツチング法でエツ
チングすることによって、基板に高密度のパターンを形
成できる。(Function) According to the present invention, by employing a two-layer resist process in which an upper thin film is formed in a specific polymer, a wet development process can be omitted, and a fine resist pattern with a high aspect ratio can be formed. It becomes possible. That is, in order to form a silicon-containing olefin sulfone polymer represented by the above general formula (I) as an upper layer thin film (thickness 0.1 to 0.5 μm) on a lower layer thin film consisting of an organic polymer, a wavelength of 300 μm is used. By selectively irradiating with ionizing radiation of nm or less, the irradiated portions are selectively removed and an upper layer pattern with submicron level fineness and excellent oxygen RIE resistance can be easily formed. As a result, the upper layer pattern can be faithfully transferred to the lower layer thin film by anisotropically etching the lower layer thin film using the RIE method using oxygen gas using the upper layer pattern as a mask. It becomes possible to form fine patterns. Further, by using such a high aspect ratio pattern as a mask and etching the exposed portion of the substrate using any etching method, a high density pattern can be formed on the substrate.
（実施例） 以下、本発明の実施例を詳細に説明する。(Example) Examples of the present invention will be described in detail below.
実施例１
まず、多結晶シリコン基板上に下層薄膜としての厚さ１
．５μｍのポジ型レジスト層（東京応化社製商品名；
０ＦＰＲ−８００）を塗布した後、２００℃、１時間加
熱処理した。つづいて、このフォトレジスト層上に上層
薄膜としての厚さ０．３μｍのポリ（３−ブテニルトリ
メチルシランスルフォン）層を塗布した後、１００℃、
２０分間加熱処理して二層レジスト層を形成した。ひき
つづき、波長１９３ ｎｍのＡｒＦエキシマレーザを光
源とする縮小投影露光装置によって、パルス当り１００
ｍＪ／ｃ１ｊの照度でパルスを３回上層レジスト層にパ
ターン状に照射し、該上層レジスト層の照射部分を選択
的に除去した。これにより、湿式の現像処理工程を行な
うことなくサブミクロン水準の微細な上層パターンが形
成された。Example 1 First, a layer with a thickness of 1 as a lower layer thin film was deposited on a polycrystalline silicon substrate.
．． 5 μm positive resist layer (trade name manufactured by Tokyo Ohka Co., Ltd.;
After applying 0FPR-800), heat treatment was performed at 200° C. for 1 hour. Subsequently, a poly(3-butenyltrimethylsilanesulfone) layer with a thickness of 0.3 μm was applied as an upper thin film on this photoresist layer, and then heated at 100°C.
A two-layer resist layer was formed by heat treatment for 20 minutes. Subsequently, a reduction projection exposure device using an ArF excimer laser with a wavelength of 193 nm as a light source was used to produce 100 images per pulse.
The upper resist layer was irradiated with pulses three times in a pattern at an illumination intensity of mJ/c1j, and the irradiated portions of the upper resist layer were selectively removed. As a result, a fine upper layer pattern on the submicron level was formed without performing a wet development process.
次いで、上層パターンをマスクとして酸素ガスによるＲ
ＩＥ法（ＲＦ小出力 １００ Ｗ、圧力；５１１０ｒｒ
ｓ酸素ガス流量４０ｓｅｃｍ＋）で下層レジスト層を１
６分間異方性エツチングを行なった。この時、上層パタ
ーンはシリコンを含有する高分子からなり、耐酸素ＲＩ
Ｅ性に優れているため、該パターンが下層レジスト層に
忠実に転写されて高アスペクト比の微細レジストパター
ンが形成された。この後、二層のレジストパターンをマ
スクとして露出する多結晶シリコン基板を四塩化炭素ガ
スによるＲＩＥ法でエツチングしたところ、該基板表面
にサブミクロン水準の高密度のパターン（蝕刻パターン
）を転写できた。Next, using the upper layer pattern as a mask, R is applied using oxygen gas.
IE method (RF small output 100 W, pressure; 5110rr
s Oxygen gas flow rate 40sec+) to remove the lower resist layer 1
Anisotropic etching was performed for 6 minutes. At this time, the upper layer pattern is made of a polymer containing silicon and has an oxygen-resistant RI.
Because of the excellent E properties, the pattern was faithfully transferred to the lower resist layer to form a fine resist pattern with a high aspect ratio. After this, when the exposed polycrystalline silicon substrate was etched using the RIE method using carbon tetrachloride gas using the two-layer resist pattern as a mask, a submicron-level high-density pattern (etched pattern) could be transferred to the substrate surface. .
実施例２
まず、８１０２基板上に実施例１と同様なポジ型レジス
ト層を塗布し、加熱処理した後、該フォトレジスト層上
に上層薄膜としての厚さ０．３μｍのポリ（３−ブテニ
ルへブタメチルジシランスルフォン）層を塗布し、１０
０℃、２０分間加熱処理して二層レジスト層を形成した
。ひきつづき、波長１９３ ｎｌｌ１のＡｒＦエキシマ
レーザを光源とする縮小投影露光装置によって、パルス
当りｌｏｏｍＪ／ｄの照度でパルスを５回上層レジスト
層にパターン状に照射し、該上層レジスト層の照射部分
を選択的に除去した。これにより、湿式の現像処理工程
を行なうことなくサブミクロン水準の微細な上層パター
ンが形成された。Example 2 First, a positive resist layer similar to that in Example 1 was coated on an 8102 substrate, and after heat treatment, a 0.3 μm thick poly(3-butenyl) film was deposited on the photoresist layer as an upper thin film. butamethyldisilane sulfone) layer, 10
A two-layer resist layer was formed by heat treatment at 0° C. for 20 minutes. Subsequently, using a reduction projection exposure device using an ArF excimer laser with a wavelength of 193 nll1 as a light source, the upper resist layer was irradiated with pulses five times in a pattern at an illuminance of room J/d per pulse, and the irradiated portions of the upper resist layer were selected. removed. As a result, a fine upper layer pattern on the submicron level was formed without performing a wet development process.
次いで、上層パターンをマスクとして酸素ガスによるＲ
ＩＥ法（ＲＦ出力； １００ Ｗ、圧力；５ｍｊＯｒｒ
ｓ酸素ガス流量４０ｓｅｃｍ）で下層レジスト層を１６
分間異方性エツチングを行なった。この時、上層パター
ンはシリコンを含有する高分子からなり、耐酸素ＲＩＥ
性に優れているため、該パターンが下層レジスト層に忠
実に転写されて高アスペクト比の微細レジストパターン
が形成された。この後、二層のレジストパターンをマス
クとして露出するＳＩＯ基板をＣＦ４−Ｈ２混合ガスに
よるＲＩＥ法でエツチングしたところ、該基板表面にサ
ブミクロン水準の高密度のパターン（蝕刻パターン）を
転写できた。Next, using the upper layer pattern as a mask, R is applied using oxygen gas.
IE method (RF output; 100 W, pressure; 5 mjOrr
s Oxygen gas flow rate 40 sec) to coat the lower resist layer 16
Anisotropic etching was performed for minutes. At this time, the upper layer pattern is made of a silicon-containing polymer and is resistant to oxygen RIE.
Because of its excellent properties, the pattern was faithfully transferred to the lower resist layer to form a fine resist pattern with a high aspect ratio. Thereafter, when the exposed SIO substrate was etched by RIE using a CF4-H2 mixed gas using the two-layer resist pattern as a mask, a submicron-level high-density pattern (etched pattern) could be transferred onto the surface of the substrate.
［発明の効果］
以上詳述した如く、本発明によれば特定の高分子により
上層薄膜を形成する二層レジストプロセスを採用するこ
とによって欠陥が発生し易い湿式の現像処理工程を省略
でき、かつ高アスペクト比の微細なパターンを形成でき
、ひいては高密度半導体装置などの微細加工工程に有効
に適用できる等顕著な効果を奏する。[Effects of the Invention] As detailed above, according to the present invention, by employing a two-layer resist process in which an upper thin film is formed using a specific polymer, a wet development process that is likely to cause defects can be omitted, and It has remarkable effects such as being able to form fine patterns with high aspect ratios and being effectively applicable to microfabrication processes for high-density semiconductor devices and the like.
出願人代理人 弁理士 鈴江武彦Applicant's agent: Patent attorney: Takehiko Suzue
Claims (1)
（ I ）にて表されるシリコン含有オレフィンスルフォ
ン系高分子の１種又は２以上からなる上層薄膜を順次形
成する工程と、この上層薄膜に波長３００ｎｍ以下の電
磁放射線をパターン状に照射し、該薄膜の照射部分を選
択的に除去して微細な上層パターンを形成する工程と、
この上層パターンをマスクとして酸素ガスによる反応性
イオンエッチング法により下層薄膜を選択的に異方性エ
ッチングして上層パターンを下層薄膜に転写する工程と
を具備したことを特徴とするパターン形成方法。 ▲数式、化学式、表等があります▼（ I ） 但し、式中のＲはシリコン原子を有するアルキル基を示
す。[Claims] A step of sequentially forming on a substrate a lower thin film made of an organic polymer and an upper thin film made of one or more silicon-containing olefin sulfone polymers represented by the following general formula (I). irradiating the upper layer thin film with electromagnetic radiation having a wavelength of 300 nm or less in a pattern, and selectively removing the irradiated portion of the thin film to form a fine upper layer pattern;
A pattern forming method comprising the step of selectively anisotropically etching the lower layer thin film using the upper layer pattern as a mask using a reactive ion etching method using oxygen gas to transfer the upper layer pattern to the lower layer thin film. ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (I) However, R in the formula represents an alkyl group containing a silicon atom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62312659A JPH01154050A (en) | 1987-12-10 | 1987-12-10 | Pattern forming method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62312659A JPH01154050A (en) | 1987-12-10 | 1987-12-10 | Pattern forming method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01154050A true JPH01154050A (en) | 1989-06-16 |
Family
ID=18031876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62312659A Pending JPH01154050A (en) | 1987-12-10 | 1987-12-10 | Pattern forming method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01154050A (en) |
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|---|---|---|---|---|
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| WO2012077640A1 (en) | 2010-12-09 | 2012-06-14 | 日産化学工業株式会社 | Composition for forming resist underlayer film containing hydroxyl group-containing carbazole novolac resin |
| JP2012126113A (en) * | 2010-12-17 | 2012-07-05 | Tohoku Univ | Method for manufacturing nanoimprint mold using metal deposition |
| KR20140069163A (en) | 2011-09-29 | 2014-06-09 | 닛산 가가쿠 고교 가부시키 가이샤 | Diarylamine novolac resin |
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| KR20160140596A (en) | 2014-03-31 | 2016-12-07 | 닛산 가가쿠 고교 가부시키 가이샤 | Composition for resist underlayer film formation containing novolak resin into which aromatic vinyl compound was incorporated through addition |
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-
1987
- 1987-12-10 JP JP62312659A patent/JPH01154050A/en active Pending
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