JPH01153596A - Base plate holder for molecular beam epitaxy apparatus - Google Patents

Abstract

PURPOSE:To obtain elements with enhanced yield by heating a semiconductor base plate in a specific system to eliminate temperature unevenness and prevent the base plate and the surface of grown film from staining. CONSTITUTION:The back surface of a semiconductor base plate 1 is brought to contact with a carbon plate 2 for uniformly heating said plate 1, and this plate 1 and said carbon plate 2 are put to close contact with each other using a ring 7 to effect fixation on a base plate holder. A thermocouple 4 is in contact with the carbon plate 2 via a tantalum plate 6, controlling a heater 5 to keep the temperature of the base plate 1 uniform and constant.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a substrate holder used in a molecular beam epitaxy apparatus (MBE).

[Conventional technology]

A conventional MBE substrate substrate holder, as shown in FIG. 3, consists of a plate-shaped body, and is configured such that a substrate 11 is attached to this plate-shaped substrate holder 13 with an adhesive 12. Then, the substrate holder 1 is heated by a heater 15 whose temperature is controlled by a thermocouple 14.
By heating 3, the substrate 11 was heated via the adhesive 12.

[Problem that the invention seeks to solve]

The crystal growth method using MBE has excellent controllability of the grown film thickness and impurity doping, but when heating a semiconductor substrate such as GaAs, the element characteristics vary due to temperature non-uniformity, which poses a problem when manufacturing devices. It becomes. One of the causes of these temperature non-uniformities is considered to be the influence of the degree of adhesion of the adhesive (for example, In) that bonds the substrate and the substrate holder. Eliminating this temperature non-uniformity is currently a major issue in crystal growth by MBE.

Since the conventional substrate holder described above fixed the substrate using an adhesive, there was a drawback that when the substrate was heated, the temperature of the substrate became uneven due to the difference in the degree of adhesion of the adhesive.

Another drawback is that the surface of the substrate or the grown film is contaminated with adhesive when the substrate is attached or removed.

[Means for solving problems]

The substrate holder of the present invention has a carbon plate for uniformly heating the substrate and a ring for fixing the substrate and the carbon plate, and is characterized in that the substrate is brought into close contact with the carbon plate and fixed by the ring for heating. .

〔Example〕

Next, the present invention will be explained using the drawings. FIG. 1 is a sectional view of a first embodiment of the invention. A substrate 1 is placed in a substrate holder 3, and a carbon plate 2 is in contact with the back surface of the substrate 1. Further, the substrate 1 and the carbon plate 2 are fixed to the substrate holder 3 by a ring 7. The thermocouple 4 is in contact with the tantalum plate 6, and the heater 5 is controlled by the thermocouple 4. Heater 5
When heated, the carbon plate 2 is heated, and then the heater 5 is controlled by the thermocouple 4 in contact with the carbon plate 6 to keep the substrate temperature constant.

Therefore, for example, when a GaAs crystal is grown using the substrate holder of the present invention, temperature non-uniformity caused by differences in the degree of adhesion (for example, In) is eliminated, and variations in device characteristics are improved.

Also, the work time for installing and removing the board is 1/20
was shortened to

FIG. 2 is a sectional view of a second embodiment of the invention. A carbon plate 2 is inserted into a substrate holder 3, and a substrate 1 is in contact with it. Further, hold the board 1 with the flat ring 8, and press the round ring 7.
Since it is fixed to the substrate holder 3, it improves the close contact with the carbon plate 2 and increases the uniformity of the substrate temperature. Further, a tantalum plate 6 is fixed to the carbon plate 2, and a heater 5 is controlled by a thermocouple 4 in contact with the tantalum plate 6 to keep the substrate temperature constant. Therefore, due to temperature uniformity, variations in device characteristics are reduced, and device characteristics are more stable than in conventional substrate holders.

〔Effect of the invention〕

As explained above, the present invention fixes a substrate to a substrate holder using a carbon plate and a ring without using an adhesive, thereby eliminating temperature non-uniformity caused by using an adhesive.
Furthermore, crucifixion of the board.

Since the substrate can be attached and removed without contaminating the substrate and the surface of the grown film during peeling off, there is an effect that the yield in producing devices can be greatly increased. Furthermore, since the working time is shortened to 1/20, there is also the effect of improving product productivity.

[Brief explanation of the drawing]

Section 1 is a sectional view of the first embodiment of the present invention, FIG. 2 is a sectional view of the second embodiment of the invention, and FIG. 3 is a sectional view of a conventional substrate holder for molecular beam epitaxy equipment. . 1.11...Substrate, 2...Carbon plate, 3,13.
...Substrate holder, 4, 14...Thermocouple, 5, 15...
・Heater, 6...Tantalum plate, 7...Ring (round)
, 8... ring (flat plate), 12... adhesive.

Claims (1)

[Claims] A substrate holder for heating a semiconductor substrate has a carbon plate to uniformly heat the substrate and a ring to fix the substrate and the carbon plate, so that the substrate is heated while being held in close contact with the carbon plate and fixed by the ring. A substrate holder for molecular beam epitaxy equipment, characterized in that: