JPH01152743A - Standard cell system semiconductor integrated circuit - Google Patents
Standard cell system semiconductor integrated circuitInfo
- Publication number
- JPH01152743A JPH01152743A JP31258787A JP31258787A JPH01152743A JP H01152743 A JPH01152743 A JP H01152743A JP 31258787 A JP31258787 A JP 31258787A JP 31258787 A JP31258787 A JP 31258787A JP H01152743 A JPH01152743 A JP H01152743A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor integrated
- integrated circuit
- data
- circuit
- bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Logic Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
データバス構成の回路部を有するスタンダードセル方式
半導体集積回路に関し、
レイアウト工程の増加を防止でき、レイアウトの自動化
を容易とすることを目的とし、データの各ビットに対し
て略同一で各ビット毎に複数の処理を連続して行なうデ
ータバス構成の回路が形成されるスタンダードセル方式
半導体集積回路において、該データの各ビットの流れが
複数のスタンダードセルを一列に並べたセル列の長手方
向と一致するよう構成する。[Detailed Description of the Invention] [Summary] With respect to a standard cell type semiconductor integrated circuit having a circuit section having a data bus configuration, the present invention aims to prevent an increase in layout steps and facilitate layout automation. In a standard cell type semiconductor integrated circuit in which a circuit with a data bus configuration that is approximately the same as the data bus and continuously performs multiple processes for each bit is formed, the flow of each bit of data connects multiple standard cells in a line. Configure it so that it matches the longitudinal direction of the arranged cell rows.
本発明はスタンダードセル方式半導体集積回路に関し、
データバス構成の回路部を有するスタンダードセル方式
半導体集積回路に関する。The present invention relates to a standard cell type semiconductor integrated circuit,
The present invention relates to a standard cell type semiconductor integrated circuit having a circuit section having a data bus configuration.
算′術論理演算装置<ALU)等において並列データの
各ビットに対して略同一であり、かつ各ビット毎に複数
の処理を連続して行なう場合第4図に示す如きデータバ
ス構成がとられる。同図中、端子101〜10Tl夫々
には並列データの各ビットが入来する。各ビットはブロ
ック111〜11TI夫々で処理1を行なわれ、次にブ
ロック12+〜12η夫々で処理2を行なわれ、同様に
してブロック131〜131夫々で処理mを1行なわれ
て端子14+〜14Tl夫々より出力される。When each bit of parallel data is substantially the same in an arithmetic logic unit (ALU), and multiple processes are performed continuously for each bit, a data bus configuration as shown in Figure 4 is used. . In the figure, each bit of parallel data is input to each of terminals 101 to 10Tl. Each bit is subjected to processing 1 in each of blocks 111 to 11TI, then processing 2 is performed in each of blocks 12+ to 12η, and similarly, processing m is performed once in each of blocks 131 to 131, and terminals 14+ to 14Tl are processed respectively. It is output from
半導体集積回路内で上記のデータバス構成の回路部を効
率良く小面積で形成することが要望されている。There is a demand for efficiently forming a circuit section having the above data bus configuration in a semiconductor integrated circuit in a small area.
従来のスタンダードセル方式の半導体集積回路は第5図
に示す如く、スタンダードセルを一列に並べてセル列1
51〜15m夫々が構成し、セル列の間が配線チャネル
16とされている。In the conventional standard cell type semiconductor integrated circuit, standard cells are arranged in a row to form cell row 1, as shown in Figure 5.
51 to 15 m, respectively, and a wiring channel 16 is formed between the cell rows.
このスタンダードセル方式の半導体集積回路でデータバ
ス構成の回路部を形成する場合、例えばセル列151の
スタンダードセル20+〜2On夫々をブロック11+
〜11ηに対応させて処理1を行ない、同様にセル列1
52のスタンダードセル21+〜21T+夫々で処理2
を行ない、セル列15mのスタンダードセル221〜2
2Tl夫々で処理mを行なう。When forming a circuit section with a data bus configuration using this standard cell type semiconductor integrated circuit, for example, each of the standard cells 20+ to 2On of the cell row 151 is connected to the block 11+.
Process 1 is performed corresponding to ~11η, and cell column 1 is similarly
Processing 2 with each of 52 standard cells 21+ to 21T+
and standard cells 221 to 2 in cell row 15m.
Processing m is performed for each of 2Tl.
つまり、セル列151〜15mの長手方向(Y方向)に
対して各データの流れはX方向と直交している。In other words, the flow of each data is orthogonal to the X direction in the longitudinal direction (Y direction) of the cell rows 151 to 15m.
(発明が解決しようとする問題点)
従来の半導体集積回路においては、処理1を行なうスタ
ンダードセル20+〜20ηのY方向幅dl、処理2(
又はm)を行なうスタンダードセル211〜21Tl(
又は221〜22TI)のY方向幅d2 (又はd3)
が夫々異なる。(Problems to be Solved by the Invention) In a conventional semiconductor integrated circuit, the width dl in the Y direction of the standard cell 20+ to 20η for processing 1, and the width dl in the Y direction for processing 2 (
or standard cells 211 to 21Tl (m)
or 221~22TI) Y direction width d2 (or d3)
are different for each.
このため、d+>d2であるとすると、各データの流れ
を平行とするためにセル列152ではスタンダードセル
21+〜21π夫々の間に幅合せ部25を設けなければ
ならず、この幅合せ部25を挿入する工程が増し、スタ
ンダードセルのレイアウトの自動化を妨げているという
問題点があった。Therefore, if d+>d2, in order to make the flow of each data parallel, it is necessary to provide a width matching part 25 between each of the standard cells 21+ to 21π in the cell row 152, and this width matching part 25 There was a problem in that this increased the number of steps to insert cells, which hindered the automation of standard cell layout.
本発明は上記の点に鑑みてなされたもので、レイアウト
工程の増加を防止でき、レイアウトの自動化を容易とす
るスタンダードセル方式の半導体集積回路を提供するこ
とを目的とする。The present invention has been made in view of the above points, and it is an object of the present invention to provide a standard cell type semiconductor integrated circuit that can prevent an increase in the number of layout steps and facilitate automation of layout.
本発明のスタンダードセル方式半導体集積回路は、デー
タの各ビットに対して略同一で各ビット毎に複数の処理
を連続して行なうデータバス構成の回路が形成されるス
タンダードセル方式半導体集積回路において、データの
各ビットの流れが複数のスタンダードセル(100〜1
02)を一列に並べたセル列(60〜62)の長手方向
と一致するよう構成する。The standard cell type semiconductor integrated circuit of the present invention is a standard cell type semiconductor integrated circuit in which a circuit having a data bus configuration that is substantially the same for each bit of data and sequentially performs a plurality of processes for each bit is formed. Each bit stream of data is divided into multiple standard cells (100 to 1
02) is configured to coincide with the longitudinal direction of the cell rows (60 to 62) arranged in a row.
本発明においては、データの各ビットの流れがセル列の
く60〜62)の長手方向と一致しているため、セル列
(60〜62)夫々に従来の如き、幅合せ部を設ける必
要がなく、工程の増加を防止でき、レイアウトの自動化
が容易となる。In the present invention, since the flow of each bit of data coincides with the longitudinal direction of the cell rows (60 to 62), it is not necessary to provide a width alignment portion in each cell row (60 to 62) as in the conventional case. This prevents an increase in process steps and facilitates layout automation.
第1図は本発明回路の一実施例の平面図を示す。 FIG. 1 shows a plan view of an embodiment of the circuit of the present invention.
第1図を説明する前に、本発明回路に形成されるデータ
バス構成のALUを第2図と共に説明する。Before explaining FIG. 1, an ALU having a data bus configuration formed in the circuit of the present invention will be explained with reference to FIG.
第2図は1ビツトについてのデータバスを示している。FIG. 2 shows a data bus for one bit.
端子30.31夫々にはデータA、Bが入来し、端子3
2〜38には信号IOA、Ice。Data A and B enter terminals 30 and 31, respectively, and terminal 3
2 to 38 are signals IOA and Ice.
ADC,ERG、C1,PLO,IGO夫々が入来する
。ADC, ERG, C1, PLO, and IGO each enter.
インプットバッファ部25のイクスクルーシブノア回路
39.40夫々が出力するデータA、B夫々と信号IO
A、ICB夫々との演算信号はインバータ41.42夫
々を経てロジックファンクション部26のナンド回路4
3及びイクスクルーシブノア回路44及び加算器50に
供給される。The data A and B output by the exclusive NOR circuits 39 and 40 of the input buffer section 25 and the signal IO
The calculation signals from each of A and ICB are sent to the NAND circuit 4 of the logic function section 26 via inverters 41 and 42, respectively.
3, an exclusive NOR circuit 44 and an adder 50.
ナンド回路43、イクスクルーシプノア回路44夫々の
出力は信号ADC,ERC夫々で制御されるトランスミ
ッションゲート45.46夫々よりイクスクルーシブノ
ア回路47に供給される。The outputs of the NAND circuit 43 and the exclusive NOR circuit 44 are supplied to the exclusive NOR circuit 47 through transmission gates 45 and 46 controlled by the signals ADC and ERC, respectively.
加算器50には信号CIも供給されており、そのSo端
子出力は信号PLOで制御されるトランスミッションゲ
ート51を経てイクスクルーシブノア回路47に供給さ
れ、co端子出力は端子52より出力される。Adder 50 is also supplied with signal CI, its So terminal output is supplied to exclusive NOR circuit 47 via transmission gate 51 controlled by signal PLO, and co terminal output is output from terminal 52.
イクスクルーシブノア回路47は信号ICOを供給され
ており、その出力はインバータ48を経て端子49より
データYとして出力される。The exclusive NOR circuit 47 is supplied with a signal ICO, and its output is output as data Y from a terminal 49 via an inverter 48.
なお、第3図に信号ICA〜ICoの値に応じたデータ
Yの演算式を示す。図中、「L」は値″O’ 、rHJ
は値’1’ 、rXJは不定、「△」はアンド、rVJ
はオア、「■」はイクスクルーシブオア夫々を示す。Incidentally, FIG. 3 shows an arithmetic expression for data Y according to the values of signals ICA to ICo. In the figure, "L" is the value "O', rHJ
is the value '1', rXJ is undefined, '△' is AND, rVJ
indicates an or, and "■" indicates an exclusive or.
第1図について説明するに、60.61.62夫々はセ
ル列であり、セル列60.61はその境界線に対して対
称であり、セル列62はセル列60と同一構成である。Referring to FIG. 1, 60, 61, and 62 are cell rows, cell rows 60, 61 are symmetrical with respect to their boundaries, and cell row 62 has the same configuration as cell row 60.
各セル列毎に第2図の回路の一部が形成されており、以
下セル列60について説明する。A part of the circuit shown in FIG. 2 is formed for each cell column, and the cell column 60 will be described below.
矩形状のトランジスタ形成領域63.64等には実線で
示すポリシリコンのゲート電極65゜66等が設けられ
ている。X方向の破線は第1層配線であり、第1層配線
67.68夫々で信号IOA、IC8が供給され、第1
層配線69゜70で信号ADC及びその反転信号XAD
Cが供給され、第1層配線71.72で信号ERC及び
その反転信号XERCが供給される。Polysilicon gate electrodes 65 and 66 shown by solid lines are provided in the rectangular transistor formation regions 63 and 64, respectively. The broken line in the X direction is the first layer wiring, and the signals IOA and IC8 are supplied to the first layer wiring 67 and 68, respectively.
Signal ADC and its inverted signal XAD at layer wiring 69°70
C is supplied, and the signal ERC and its inverted signal XERC are supplied through the first layer wirings 71 and 72.
Y方向の一点鎖線は第2層配線であり、第2層配線73
.74夫々で電源VDD、VSSが供給され、第2層配
線75.76夫々でデータA、8が供給される。The dashed line in the Y direction is the second layer wiring, and the second layer wiring 73
.. 74 are supplied with power supplies VDD and VSS, respectively, and second layer wirings 75 and 76 are supplied with data A and 8, respectively.
なお、○印は基板と第1層配線とのコンタクト、目印は
第1層配線と第2層配線とのコンタクトを示している。Note that the circles indicate contacts between the substrate and the first layer wiring, and the marks indicate the contacts between the first layer wiring and the second layer wiring.
トランジスタ形成領域63.64.80.81及び82
.83夫々でイクスクルーシブノア回路39及びインバ
ータ41が形成され、トランジスタ形成領域84〜87
及び88.89夫々でインプットバッファ部25のイク
スクルーシブノア回路40及びインバータ42が形成さ
れている。インバータ41.42の出力は第2層配線9
0゜91によりトランジスタ形成領域92.93及び9
4〜98で形成されるロジックファンクション部26に
供給される。Transistor formation regions 63.64.80.81 and 82
.. The exclusive NOR circuit 39 and the inverter 41 are formed in each of the transistor forming regions 84 to 87.
The exclusive NOR circuit 40 and the inverter 42 of the input buffer section 25 are formed by 88 and 89, respectively. The output of the inverters 41 and 42 is the second layer wiring 9
Transistor formation regions 92, 93 and 9 due to 0°91
The signal is supplied to the logic function section 26 formed by sections 4 to 98.
上記セル列61はインプットバッファ部25を構成する
スタンダードセル100、ナンド回路43及びトランス
ミッションゲート45を構成するスタンダードセル10
1、イクスクルーシブノア回路44及びトランスミッシ
ョンゲート46を構成するスタンダードセル102及び
第1図のY方向下方において加尊器50を構成するセル
等よりなる。The cell row 61 includes standard cells 100 forming the input buffer section 25, standard cells 100 forming the NAND circuit 43, and the transmission gate 45.
1. The standard cell 102 which constitutes the exclusive NOR circuit 44 and the transmission gate 46, and the cell which constitutes the converter 50 in the lower part of the Y direction in FIG.
このようにセル列60〜63夫々の長手方向くY方向)
とデータの流れる方向(Y方向)とが一致するため、セ
ル列60・〜63に従来の如ぎ幅合せ部を設ける必要が
ない。従って、工程の増加を防ぐことができ、スタンダ
ードセル)配置つまりレイアウトの自動化が容易となる
。In this way, the longitudinal direction of each cell row 60 to 63 (Y direction)
Since the data flow direction (Y direction) coincides with the data flow direction, there is no need to provide a width matching portion in the cell rows 60 to 63 as in the conventional case. Therefore, it is possible to prevent an increase in the number of steps, and it becomes easy to automate the arrangement (standard cell), that is, the layout.
上述の如く本発明のスタンダードセル方式の半導体集積
回路によれば、レイアウト工程の増加を防止でき、レイ
アウトの自動化を容易にすることができ、実用上ぎわめ
で有用である。As described above, according to the standard cell type semiconductor integrated circuit of the present invention, it is possible to prevent an increase in the number of layout steps, and it is possible to easily automate the layout, which is extremely useful in practice.
第1図は本発明のスタンダードセル方式半導体集積回路
の一実施例の平面図、
第2図はALUの一実施例の回路図、
第3図は第2図の回路の演算動作を説明するための図、
第4図はデータバスを説明するための図、第5図は従来
回路の構成を説明するための図である。
図において、
60〜62はセル列、
63.64.80〜89.92〜98はトランジスタ形
成領域、
65.66はゲート電極、
67・〜72は第1層配線、
73〜76.90.91は第2層配線、100〜102
はスタンダードセル
を示す。
特許出願人 富 士 通 株式会社
同 富士通ヴイ1ルエスアイ株式会社第2図
データ・ぐスを1況+Jjするための間第4図
従来回路の構成を説明するだめの図FIG. 1 is a plan view of an embodiment of the standard cell type semiconductor integrated circuit of the present invention, FIG. 2 is a circuit diagram of an embodiment of an ALU, and FIG. 3 is for explaining the calculation operation of the circuit of FIG. 2. FIG. 4 is a diagram for explaining a data bus, and FIG. 5 is a diagram for explaining the configuration of a conventional circuit. In the figure, 60-62 are cell columns, 63.64.80-89.92-98 are transistor formation regions, 65.66 are gate electrodes, 67-72 are first layer wirings, 73-76.90.91 is the second layer wiring, 100 to 102
indicates a standard cell. Patent Applicant: Fujitsu Limited Fujitsu VLSI Ltd. Figure 2 Diagram for configuring data/gusu + Jj Figure 4 Diagram for explaining the configuration of a conventional circuit
Claims (1)
の処理を連続して行なうデータバス構成の回路が形成さ
れるスタンダードセル方式半導体集積回路において、 該データの各ビットの流れが複数のスタンダードセル(
100〜102)を一列に並べたセル列(60〜62)
の長手方向と一致するよう構成したことを特徴とするス
タンダードセル方式半導体集積回路。[Scope of Claims] In a standard cell type semiconductor integrated circuit in which a circuit having a data bus configuration is formed that is substantially the same for each bit of data and sequentially performs a plurality of processes for each bit, each bit of data is provided with: The flow of multiple standard cells (
Cell row (60-62) in which cells 100-102) are arranged in a row
1. A standard cell type semiconductor integrated circuit characterized in that the circuit is configured to match the longitudinal direction of the semiconductor integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31258787A JPH01152743A (en) | 1987-12-10 | 1987-12-10 | Standard cell system semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31258787A JPH01152743A (en) | 1987-12-10 | 1987-12-10 | Standard cell system semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01152743A true JPH01152743A (en) | 1989-06-15 |
Family
ID=18030997
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31258787A Pending JPH01152743A (en) | 1987-12-10 | 1987-12-10 | Standard cell system semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01152743A (en) |
-
1987
- 1987-12-10 JP JP31258787A patent/JPH01152743A/en active Pending
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