JPH01152277A - Thin film forming device - Google Patents
Thin film forming deviceInfo
- Publication number
- JPH01152277A JPH01152277A JP31279487A JP31279487A JPH01152277A JP H01152277 A JPH01152277 A JP H01152277A JP 31279487 A JP31279487 A JP 31279487A JP 31279487 A JP31279487 A JP 31279487A JP H01152277 A JPH01152277 A JP H01152277A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- laser beam
- plasma
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000010408 film Substances 0.000 claims abstract description 24
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 18
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 30
- 239000012495 reaction gas Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 3
- 238000000354 decomposition reaction Methods 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、基板表面に薄膜を形成する薄膜形成装置に
関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thin film forming apparatus for forming a thin film on a substrate surface.
［従来の技術］
第３図は例えば特開昭６１−１０８１２７号公報に記載
の従来の薄膜形成装置、特にレーザビームを用いて基板
上に薄膜を形成する装置の基本的な構成を示す断面構成
図である。図において、（１）は薄膜形成時にその中が
高真空状態に減圧される反応室、（４）はこの反応室（
１）内に導入されるシラン等の反応ガス、（５）は薄膜
が形成される基板、（９）はこの基板（５）を載置する
保持部、（３）は基板加熱用ヒータである。また、（２
）は基板（５）表面の加熱、及び矢印（４）方向から導
入される反応ガスの熱励起を行なうためのレーザビーム
を発振出力するためのレーザビーム発振器、（１０）は
このレーザビーム発振器（２）から出力されるレーザビ
ームを基板（５）の表面上に集光するレーザビーム集光
装置、（ＩＩ）はル−ザビーム、（１２ンはレーザビー
ム（１１）を基板（５）上で走査するスキャナー装置、
（６）は反応室（１）の上面に設けられた光透過材から
なるレーザビーム入射窓である。（７）は反応ガス供給
口、（８）はガス排出口で、反応後のガスを矢印（４ａ
）方向に排出する。[Prior Art] Fig. 3 is a cross-sectional configuration showing the basic configuration of a conventional thin film forming apparatus, particularly an apparatus for forming a thin film on a substrate using a laser beam, as described in, for example, Japanese Patent Application Laid-Open No. 61-108127. It is a diagram. In the figure, (1) is a reaction chamber whose inside is reduced to a high vacuum state during thin film formation, and (4) is this reaction chamber (
1) Reactive gas such as silane introduced into the chamber, (5) a substrate on which a thin film is formed, (9) a holding part on which the substrate (5) is placed, and (3) a heater for heating the substrate. . Also, (2
) is a laser beam oscillator for oscillating and outputting a laser beam for heating the surface of the substrate (5) and thermally excitation of the reaction gas introduced from the direction of arrow (4), and (10) is this laser beam oscillator ( 2) is a laser beam focusing device that focuses the laser beam output from the substrate (5) onto the surface of the substrate (5), (II) is the laser beam, (12) is the laser beam (11) that focuses the laser beam on the surface of the substrate (5); scanner device for scanning;
(6) is a laser beam entrance window made of a light-transmitting material and provided on the upper surface of the reaction chamber (1). (7) is the reaction gas supply port, (8) is the gas discharge port, and the gas after the reaction is indicated by the arrow (4a).
) direction.
次に動作について説明する。この装置では、反応ガスが
反応ガス供給口（７）から反応室（１）内に導入される
一方、基板（５）表面の所定部分 レーザビーム（１１
）によって熱せられた部分に、熱分解によって生じた反
応生成物が堆積し、これにより選択的に薄膜が形成され
る。このようにして基板（５）上の所定部分に薄膜を形
成しながら、スキャナー装置（Ｉ２）により 基板（５
）上にレーザビーム（１１）を走査し、基ｖｉ（５）上
に薄膜を形成する。Next, the operation will be explained. In this device, a reaction gas is introduced into a reaction chamber (1) from a reaction gas supply port (7), while a predetermined portion of the surface of a substrate (5) is exposed to a laser beam (11).
), reaction products generated by thermal decomposition are deposited on the heated portion, thereby selectively forming a thin film. While forming a thin film on a predetermined portion of the substrate (5) in this way, the scanner device (I2) scans the substrate (5).
) to form a thin film on the base vi (5).
［発明が解決しようとする問題点］
このような従来の装置では、かなりの高速度で薄膜を形
成することはできるが、反応ガス（４）を熱分解させる
ためには基板（５）の表面をｔｏｏｏ℃程度に高温にし
なければならない。従って形成される薄膜や、基板（５
）表面に与えるダメージが大きく、また膜質の均一な薄
膜が得られないという問題点があった。[Problems to be Solved by the Invention] Although it is possible to form a thin film at a fairly high speed with such a conventional device, it is necessary to thermally decompose the reaction gas (4) on the surface of the substrate (5). must be heated to a temperature of about 100°F. Therefore, the thin film formed and the substrate (5
) There were problems in that the damage to the surface was large and a thin film with uniform quality could not be obtained.
本発明は上記のような問題点を解消するためになされた
もので、基板表面（層成する薄膜の下層膜）を高温にす
ることなく薄膜を形成し、基板表面や形成される薄膜へ
のダメージを少なくできるとともに、均質な薄膜が形成
できる薄膜形成装置を得ることを目的とする。The present invention has been made to solve the above-mentioned problems, and it forms a thin film without raising the temperature of the substrate surface (the lower layer of the thin film to be formed), thereby reducing the temperature of the substrate surface and the formed thin film. It is an object of the present invention to provide a thin film forming apparatus that can reduce damage and form a homogeneous thin film.
また、本発明の別の発明は、上記目的に加えてｍ密で基
板との密着性に優れた薄膜が形成できる薄膜形成装置を
得ることを目的とする。In addition to the above object, another object of the present invention is to obtain a thin film forming apparatus capable of forming a thin film having m-density and excellent adhesion to a substrate.
［問題点を解決するための手段］
本発明の薄膜形成装置は、成膜用反応ガスをプラズマ化
するプラズマ装置、基板を収容し、上記プラズマ装置で
プラズマ化された成膜用反応ガスとこ１１膜を形成する
レーザビームを発振するレーザビーム発振器、及び上記
基板の任意領域に上記し一ザビームが照射されるよう基
板に対して上記レーザビームを走査する走査手段を備え
たものである。[Means for Solving the Problems] The thin film forming apparatus of the present invention accommodates a plasma device and a substrate that convert a reaction gas for film formation into plasma, and stores a reaction gas for film formation turned into plasma in the plasma device. The apparatus is equipped with a laser beam oscillator that oscillates a laser beam for forming a film, and a scanning means that scans the laser beam across the substrate so that the laser beam irradiates an arbitrary area of the substrate.
また、本発明の別の発明の薄膜形成装置は、上記のもの
において、上記反応室に上記基板と対向して プラズマ
化された成膜用反応ガス中のイオン粒子を加速する電極
を設けたものである。Further, in the thin film forming apparatus according to another aspect of the present invention, in the above apparatus, an electrode is provided in the reaction chamber to face the substrate and accelerate ion particles in the reaction gas for forming a film that has been turned into plasma. It is.
［作用］
本発明においては、成膜用反応ガスをプラズマ装置によ
りプラズマ化することにより、成膜のためのガス分解を
基板を高温（１０００’ｃ程度）に加熱することなく行
えるので、基板表面や形成される成膜ガス粒子の急冷を
防止し、成膜ガス粒子にエネルギを与え、基板表面での
移動距離を長くできるので、理想的な堆積が可能となり
、均質で高品質の薄膜を高速で形成できる。[Function] In the present invention, by converting the reaction gas for film formation into plasma using a plasma device, gas decomposition for film formation can be performed without heating the substrate to a high temperature (approximately 1000'C). This prevents the rapid cooling of the film-forming gas particles that are formed, gives energy to the film-forming gas particles, and increases the distance they travel on the substrate surface, making ideal deposition possible and producing homogeneous, high-quality thin films at high speed. It can be formed by
また、本発明の別の発明においては、プラズマ化された
成膜用反応ガス中のイオン粒子が加速されており、基板
に高速で衝突する一方、材料ガスとも衝突する回数が多
くなり、膜質が緻密で基板との密着性のよい薄膜が高速
で形成できる。Further, in another invention of the present invention, the ion particles in the plasma-formed reaction gas for film formation are accelerated, and while they collide with the substrate at high speed, they also collide with the material gas many times, resulting in poor film quality. A dense thin film with good adhesion to the substrate can be formed at high speed.
［実施例］ 以下、本発明の実施例を図について説明する。[Example] Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第１図はこの発明の一実施例の薄膜形成装置を一部内部
を切り欠いて示す斜視図である。図において、第３図と
同一符号は同−又は相当部分を示している。（３０）は
基板（５）上に レーザビーム（１１）を走査するスキ
ャナ装置で、基板（５）表面に垂直な軸Ｚ−Ｚまわりに
回転する第１の回転平面鏡（２３）と基板（５）表面に
平行な軸Ｙ ’−Ｙ ’まわりに回転する第２の回転平
面鏡（２４）で構成されている。（２５）はシラン等の
材料ガスを基板（５）の表面上に供給する材料ガス給気
部、（２６）はプラズマ装置、（２７）はプラズマ装置
（２６）でプラズマ化した反応ガス、例えばＮ２０．
Ｎ２、Ｎ Ｈａ等を基板（５）の表面上に供給するプ
ラズマガス給気部、（２８）はガス排気部である。FIG. 1 is a perspective view showing a thin film forming apparatus according to an embodiment of the present invention, with the inside partially cut away. In the figure, the same reference numerals as in FIG. 3 indicate the same or corresponding parts. (30) is a scanner device that scans a laser beam (11) on the substrate (5), and includes a first rotating plane mirror (23) that rotates around an axis Z-Z perpendicular to the surface of the substrate (5) and a substrate (5). ) consists of a second rotating plane mirror (24) rotating around an axis Y'-Y' parallel to the surface. (25) is a material gas supply unit that supplies a material gas such as silane onto the surface of the substrate (5), (26) is a plasma device, and (27) is a reactive gas that has been turned into plasma by the plasma device (26), e.g. N20.
A plasma gas supply section (28) supplies N2, NHa, etc. onto the surface of the substrate (5), and a gas exhaust section (28).
次に動作について説明する。まず、材料ガス、例えば５
ｉＨａを材料ガス給気部（２５）より、他の反応ガス、
例えばＮ２０ガス等をプラズマ装置（２６）を通過させ
プラズマ化し、プラズマガス給気部（２７）より基板
（５）表面上に供給する。基板（５）表面上で材料ガス
とプラズマ化した反応ガスが分解・反応して、成膜ガス
粒子（例えばＳｉを含んだ粒子と０粒子）が基板（５）
表面上にでる。レーザ発振器（２）より発振されたレー
ザビーム（１１）は第１、第２の回転モ面鏡（２３）（
２４）により反射し、基板（５）表面に達する。このレ
ーザビーム（１１）により 基板（５）表面は加熱され
活性化されるとともに、成膜ガス粒子も加熱され、基板
（５）表面上を移動できるエネルギを与えられるので、
膜質の均一な良質の薄膜が形成される。この成膜ガスの
分解は反応室外で発生したプラズマを用いているので、
ガスを熱分解しなくともよく、基板（５）は高温（１０
００°Ｃ）に加熱する必要はない。従って基板（５）表
面や形成される薄膜に与えるダメージを少なくできる。Next, the operation will be explained. First, the material gas, for example 5
iHa is supplied with other reaction gases from the material gas supply section (25),
For example, N20 gas or the like is passed through a plasma device (26), turned into plasma, and supplied onto the surface of the substrate (5) from a plasma gas supply section (27). The material gas and the plasma-formed reaction gas decompose and react on the surface of the substrate (5), and film-forming gas particles (for example, Si-containing particles and 0 particles) are formed on the substrate (5).
appear on the surface. The laser beam (11) oscillated by the laser oscillator (2) is transmitted to the first and second rotating movable mirrors (23) (
24) and reaches the surface of the substrate (5). This laser beam (11) heats and activates the surface of the substrate (5), and also heats the film forming gas particles, giving them energy to move on the surface of the substrate (5).
A high-quality thin film with uniform film quality is formed. This film-forming gas is decomposed using plasma generated outside the reaction chamber.
There is no need to thermally decompose the gas, and the substrate (5) is heated to a high temperature (10
00°C) is not necessary. Therefore, damage to the surface of the substrate (5) and the formed thin film can be reduced.
また、レーザビーム（１１）は、第１の回転平面鏡（２
３）をＺ軸まわりに、第２の回転平面鏡（２４）をＹ′
軸まわりに回転することにより 第１図の基板（５）の
表面上Ｘ −Ｘ、 Ｙ −Ｙ方向にそれぞれ移動する
。従って、基板（５）表面全域を加熱できる。また、基
板（５）に堆積しないガスは ガス排気部（２８）によ
り反応室（１）外に廃棄される。Further, the laser beam (11) is transmitted to the first rotating plane mirror (2).
3) around the Z axis, and the second rotating plane mirror (24) around the Y'
By rotating around the axis, it moves in the X-X and Y-Y directions on the surface of the substrate (5) in FIG. 1, respectively. Therefore, the entire surface of the substrate (5) can be heated. Further, gas that is not deposited on the substrate (5) is disposed of outside the reaction chamber (1) by the gas exhaust section (28).
第２図は、この発明の他の実施例の薄膜形成装置を一部
内部を切り欠いて示す斜視図である。図において、第１
図、第３図と同一符号は同−又は相当部分を示している
。（３３）は基板（５）と対向して反応室（１）内に設
けられたメツシュ電極、（３４）は電極（３３）と基板
（５）の保持部（９）間に高周波電界を発生させる高周
波電源である。FIG. 2 is a perspective view showing a thin film forming apparatus according to another embodiment of the present invention, with the inside partially cut away. In the figure, the first
The same reference numerals as in FIG. 3 and FIG. 3 indicate the same or corresponding parts. (33) is a mesh electrode provided in the reaction chamber (1) facing the substrate (5), and (34) generates a high frequency electric field between the electrode (33) and the holding part (9) of the substrate (5). It is a high frequency power supply that allows
次に動作について説明する。成膜は上記実施例と同様に
して行なうのであるが、この実施例ではざらに電極（３
３）と基板（５）の保持部（９）間に高周波ｔ ＃ （
３４）により高周波電界をかけておく。これにより、電
極（３３）と基板（５）間のプラズマ化した反応ガス中
のイオン化したガス粒子が加速され高速度で基板（５）
表面に衝突する。従フて、膜質がよりｍ密で基板との密
着性の良い薄膜を形成できた。Next, the operation will be explained. Film formation was carried out in the same manner as in the above embodiment, but in this embodiment, the electrodes (3
3) and the holding part (9) of the substrate (5).
34) to apply a high frequency electric field. As a result, the ionized gas particles in the plasma-formed reaction gas between the electrode (33) and the substrate (5) are accelerated and moved toward the substrate (5) at high speed.
Collision with a surface. Therefore, a thin film with higher density and better adhesion to the substrate could be formed.
また成膜速度も向上でさた。Also, the film formation speed was improved.
なお、電極（３３）は開口率の高いメツシュ電極を用い
ているのでレーザビーム（１１）の光量の損失は少ない
。ざらに、電極（３３）に高周波型ｇ（３４）を接続し
ているので、直流電源では絶縁性の薄膜を形成するとき
に起こる、基板（５）の表面に電荷が蓄積され成膜が続
行できなくなる、あるいは成膜速度が減少するという現
象を改善できる。また、粒子速度をコントロールするた
めに高周波電源の出力電圧は可変とした。In addition, since the electrode (33) uses a mesh electrode with a high aperture ratio, there is little loss in the amount of light of the laser beam (11). Generally speaking, since the high frequency type g (34) is connected to the electrode (33), electric charge is accumulated on the surface of the substrate (5), which occurs when forming an insulating thin film with a DC power source, and film formation continues. It is possible to improve the phenomenon in which the film formation rate is reduced or the film formation rate is reduced. In addition, the output voltage of the high-frequency power source was made variable to control the particle speed.
なお、上記実施例では、スキャナ装置（３０）を第１、
第２の回転平面鏡（２３）（２４）で構成したものにつ
いて示したが、第２の回転平面鏡（２４）の代わりに回
転凹球面鏡を用い、レーザビーム（ＩＩ）を基板（５）
表面近傍で収束させると、基板（５）表面や成膜ガス粒
子の加熱効率がよくなる。Note that in the above embodiment, the scanner device (30) is
Although the configuration shown is composed of second rotating plane mirrors (23) and (24), a rotating concave spherical mirror is used instead of the second rotating plane mirror (24), and the laser beam (II) is directed to the substrate (5).
When the light is focused near the surface, the heating efficiency of the substrate (5) surface and film-forming gas particles is improved.
また、レーザビームとしてＣＯ２レーザを用いると、基
板（５）がＳｉ材の場合又は成膜ガスがＳｉを含むガス
の場合に吸収率が高いので加熱効果がよいという効果が
ある。Furthermore, when a CO2 laser is used as the laser beam, the absorption rate is high when the substrate (5) is made of Si material or when the film forming gas is a gas containing Si, so that the heating effect is good.
ざらに、上記実施例では、基板（５）上に レーザビー
ム（ＩＩ）を走査する場合について示したが、基板（５
）を例えばテーブル移動機構のようなもので、レーザビ
ーム（１１）と直角方向に水平移動させるようにしても
同様の効果を奏する。Roughly speaking, in the above embodiment, the case where the laser beam (II) is scanned on the substrate (5) is shown.
) can be moved horizontally in a direction perpendicular to the laser beam (11) using a table moving mechanism, for example, to obtain the same effect.
［発明の効果コ
以上のように、本発明によれは、成膜用反応ガスをプラ
ズマ化するプラズマ装置、基板を収容し、上記プラズマ
装置でプラズマ化された成膜用反応基板に薄膜を形成す
るレーザビームを発振するレーザビーム発振器、及び上
記基板の任意領域に上記レーザビームが照射されるよう
基板に対して上記レーザビームを走査する走査手段をイ
嘴えたものにすることにより、基板表面（形成する薄膜
の下Ｎ膜）を高温にすることなく薄膜を形成でき、基板
表面や形成される薄膜へのダメージを少なくできろとと
もに、均質な薄膜が形成できる効果かある。[Effects of the Invention] As described above, according to the present invention, a plasma device for converting a film-forming reaction gas into plasma and a substrate are housed, and a thin film is formed on the film-forming reaction substrate that has been turned into plasma by the plasma device. The substrate surface ( It is possible to form a thin film without raising the temperature of the lower N film to be formed, thereby reducing damage to the substrate surface and the thin film being formed, and also being able to form a homogeneous thin film.
また、本発明の別の発明によれは、上記のものにおいて
、上記反応室に上記基板と対向して プラズマ化された
成膜用反応ガス中のイオン粒子を加速する電極を設ける
ことにより、加えて緻密で基板との密着性に優れた薄膜
が高速で形成できる効果がある。According to another invention of the present invention, in the above-mentioned thing, an electrode is provided in the reaction chamber to face the substrate and accelerate ion particles in a plasma-formed reaction gas for film formation. This has the effect of forming a dense thin film with excellent adhesion to the substrate at high speed.
第１図はこの発明の一実施例の薄膜形成装置を一部内部
を切り欠いて示す斜視図、第２図はこの発明の他の実施
例の薄膜形成装置を一部内部を切り欠いて示す斜視図、
第３図は従来の薄膜形成装置を示す断面構成図である。
図において、（１）は反応室、（２）はレーザビーム発
振器、（５）は基板、（１１）はレーザビーム、（２６
）はプラズマ装置、（３０）はスキャナ装置、（３３）
は電極、（３へ）は高周波電源である。
なお、図中、同一符号は同一または相当部分を示す。FIG. 1 is a perspective view showing a thin film forming apparatus according to one embodiment of the present invention with the inside partially cut away, and FIG. 2 is a perspective view showing a thin film forming apparatus according to another embodiment of the present invention with the inside partially cut away. Perspective view,
FIG. 3 is a cross-sectional configuration diagram showing a conventional thin film forming apparatus. In the figure, (1) is a reaction chamber, (2) is a laser beam oscillator, (5) is a substrate, (11) is a laser beam, and (26) is a laser beam oscillator.
) is a plasma device, (30) is a scanner device, (33)
is an electrode, and (to 3) is a high frequency power source. In addition, in the figures, the same reference numerals indicate the same or corresponding parts.
Claims (8)
基板を収容し、上記プラズマ装置でプラズマ化された成
膜用反応ガスと成膜用材料ガスが供給される反応室、上
記基板表面を活性化し、成膜用材料ガスを分解して上記
基板に薄膜を形成するレーザビームを発振するレーザビ
ーム発振器、及び上記基板の任意領域に上記レーザビー
ムが照射されるよう基板に対して上記レーザビームを走
査する走査手段を備えた薄膜形成装置。(1) A plasma device that converts the reaction gas for film formation into plasma,
A reaction chamber that houses a substrate and is supplied with a film-forming reaction gas and a film-forming material gas that have been turned into plasma by the plasma device; A thin film forming apparatus comprising: a laser beam oscillator that oscillates a laser beam for forming a thin film; and a scanning means that scans a substrate with the laser beam so that a desired area of the substrate is irradiated with the laser beam.
ャナー装置である特許請求の範囲第１項記載の薄膜形成
装置。(2) The thin film forming apparatus according to claim 1, wherein the scanning means is a scanner device that scans a laser beam on the substrate.
移動させるテーブル移動機構である特許請求の範囲第１
項記載の薄膜形成装置。(3) The scanning means is a table moving mechanism that horizontally moves the substrate in a direction perpendicular to the laser beam.
Thin film forming apparatus as described in .
許請求の範囲第１項ないし第３項のいずれかに記載の薄
膜形成装置。(4) The thin film forming apparatus according to any one of claims 1 to 3, wherein the laser beam is a CO_2 laser beam.
基板を収容し、上記プラズマ装置てプラズマ化された成
膜用反応ガスと成膜用材料ガスが供給される反応室、上
記基板表面を活性化し、成膜用材料ガスを分解して上記
基板に薄膜を形成するレーザビームを発振するレーザビ
ーム発振器、上記基板の任意領域に上記レーザビームが
照射されろよう基板に対して上記レーザビームを走査す
る走査手段、及び上記反応室に上記基板と対向して設け
られ、プラズマ化された成膜用反応ガス中のイオン粒子
を加速する電極を備えた薄膜形成装置。(5) a plasma device that converts the reaction gas for film formation into plasma;
A reaction chamber that houses a substrate and is supplied with a film-forming reaction gas and a film-forming material gas that have been turned into plasma by the plasma device; a laser beam oscillator that oscillates a laser beam for forming a thin film; a scanning device that scans the laser beam across the substrate so that a desired area of the substrate is irradiated with the laser beam; A thin film forming apparatus equipped with an electrode that accelerates ion particles in a plasma-formed reaction gas for film formation.
記載の薄膜形成装置。(6) The thin film forming apparatus according to claim 5, wherein the electrode is a mesh electrode.
許請求の範囲第５項または第６項記載の薄膜形成装置。(7) The thin film forming apparatus according to claim 5 or 6, wherein a high frequency voltage is applied between the electrode and the substrate.
許請求の範囲第５項ないし第７項のいずれかに記載の薄
膜形成装置。(8) The thin film forming apparatus according to any one of claims 5 to 7, wherein the laser beam is a CO_2 laser beam.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31279487A JPH01152277A (en) | 1987-12-09 | 1987-12-09 | Thin film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31279487A JPH01152277A (en) | 1987-12-09 | 1987-12-09 | Thin film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01152277A true JPH01152277A (en) | 1989-06-14 |
Family
ID=18033485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31279487A Pending JPH01152277A (en) | 1987-12-09 | 1987-12-09 | Thin film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01152277A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178748A (en) * | 2013-05-21 | 2014-12-03 | 东京毅力科创株式会社 | Air supplying head, air supplying mechanism and substrate processing device |
-
1987
- 1987-12-09 JP JP31279487A patent/JPH01152277A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178748A (en) * | 2013-05-21 | 2014-12-03 | 东京毅力科创株式会社 | Air supplying head, air supplying mechanism and substrate processing device |
| JP2014229693A (en) * | 2013-05-21 | 2014-12-08 | 東京エレクトロン株式会社 | Gas supply head, gas supply mechanism and substrate processing apparatus |
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