JPH01147271U - - Google Patents
Info
- Publication number
- JPH01147271U JPH01147271U JP1988042830U JP4283088U JPH01147271U JP H01147271 U JPH01147271 U JP H01147271U JP 1988042830 U JP1988042830 U JP 1988042830U JP 4283088 U JP4283088 U JP 4283088U JP H01147271 U JPH01147271 U JP H01147271U
- Authority
- JP
- Japan
- Prior art keywords
- evaporation source
- growth chamber
- opening
- shutter
- shaft
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Priority Applications (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988042830U JPH0527501Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-03-30 | 1988-03-30 | |
DE68926577T DE68926577T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie |
EP89105248A EP0335267B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
EP92117113A EP0529687B1 (en) | 1988-03-30 | 1989-03-23 | Molecular beam epitaxy apparatus |
DE68916457T DE68916457T2 (de) | 1988-03-30 | 1989-03-23 | Einrichtung zur Molekularstrahlepitaxie. |
TW080105276A TW202485B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-03-30 | 1989-03-24 | |
US07/329,313 US4944246A (en) | 1988-03-30 | 1989-03-27 | Molecular beam epitaxy apparatus |
CA000594977A CA1333038C (en) | 1988-03-30 | 1989-03-29 | Molecular beam epitaxy apparatus |
KR1019890004152A KR930010750B1 (ko) | 1988-03-30 | 1989-03-30 | 분자선 에피택시 장치 |
CA000616594A CA1333039C (en) | 1988-03-30 | 1993-03-30 | Molecular beam epitaxy apparatus |
KR1019930013044A KR930010751B1 (ko) | 1988-03-30 | 1993-07-09 | 분자선 에피택시 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988042830U JPH0527501Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-03-30 | 1988-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01147271U true JPH01147271U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-11 |
JPH0527501Y2 JPH0527501Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-13 |
Family
ID=31269234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988042830U Expired - Lifetime JPH0527501Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-03-30 | 1988-03-30 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0527501Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61210615A (ja) * | 1985-03-15 | 1986-09-18 | Komatsu Ltd | 薄膜形成装置 |
JPS62141716A (ja) * | 1985-12-17 | 1987-06-25 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長装置 |
-
1988
- 1988-03-30 JP JP1988042830U patent/JPH0527501Y2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61210615A (ja) * | 1985-03-15 | 1986-09-18 | Komatsu Ltd | 薄膜形成装置 |
JPS62141716A (ja) * | 1985-12-17 | 1987-06-25 | Agency Of Ind Science & Technol | 分子線エピタキシヤル成長装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0527501Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-13 |