JPH01143940A - Method and device for inspecting defect of sheet-like etching precision component - Google Patents

Method and device for inspecting defect of sheet-like etching precision component

Info

Publication number
JPH01143940A
JPH01143940A JP30282987A JP30282987A JPH01143940A JP H01143940 A JPH01143940 A JP H01143940A JP 30282987 A JP30282987 A JP 30282987A JP 30282987 A JP30282987 A JP 30282987A JP H01143940 A JPH01143940 A JP H01143940A
Authority
JP
Japan
Prior art keywords
light
etched
lead frame
etched precision
light beams
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30282987A
Other languages
Japanese (ja)
Inventor
Takao Yoshizawa
吉沢 孝夫
Ryoichi Tamura
田村 良一
Kazuo Watanabe
一生 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Hitachi High Tech Corp
Original Assignee
Dai Nippon Printing Co Ltd
Hitachi Electronics Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd, Hitachi Electronics Engineering Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP30282987A priority Critical patent/JPH01143940A/en
Publication of JPH01143940A publication Critical patent/JPH01143940A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

PURPOSE:To surely discriminate and detect a defect of a through-hole, etc. and a defect of half etching by setting a level ratio of illuminating light beams from the reverse side of etching precision parts and reflecting light beams of the illuminating light beams from the surface side to a specific value and synthesizing said both light beams. CONSTITUTION:A lead frame 1 to be inspected is placed on a transparent placing base 2 such as a glass plate, etc., and the surface of the lead frame 1 is irradiated vertically through a projection lens 4a and a half mirror 7 from a light source 3a. Subsequently, the reverse side is irradiated vertically through a projection lens 4b from a light source 3b provided on the reverse side. Next, a ratio of intensity of transmission light beams of the illuminating light beams of the reverse side by the lead frame 1 and intensity of reflecting light beams by the illuminating light beams of the surface side is set so as to become about 1:0.5 and said both light beams are synthesized, and photodetected in common by the same photodetector 8. In such a way, from two pieces of digital signals obtained by detecting an analog signal to the lead frame 1 outputted from the photodetector, by two pieces of signal detectors 9-1, 9-2 to which the respective different threshold levels have been set, a defect such as a through- hole existing in the lead frame 1, a short circuit, etc., and a defect caused by half etching are discriminated and detected.

Description

【発明の詳細な説明】 [産業上の利用分野] この発明は、ICチップの配線用のリードフレーム等の
シート状エツチング精密部品の欠陥を検査する方法とそ
の装置に関し、さらに詳細にはリード線に生じた貫通孔
、ショートなどの欠陥と、エツチング不良により生じた
ハーフエツチングの欠陥を区別して検出する方法、装置
に間するものである。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method and apparatus for inspecting defects in sheet-like etched precision parts such as lead frames for wiring of IC chips, and more particularly, to The present invention provides a method and apparatus for distinguishing and detecting defects such as through holes and short circuits caused by etching, and half-etching defects caused by poor etching.

[従来の技術] 半導体製品のICデバイスは、第3図(a)に1例を示
すリードフレーム1のほぼ中央のフレームアイランド1
bにICチップを搭載し、リード線1aに接続配線され
たものである。リードフレーム1は金属の薄板にリード
v&lbのパターンを描いてエツチング法により作成さ
れる。リード線は極めて細いもので、エツチング処理中
になんらかの原因により欠陥が生ずる。第3図(b)に
その例を示す、(イ)は貫通孔、(IT)は端部が欠損
したもの(以下(イ)と(U)などを−括して欠損欠陥
とよぶ)、(八)はリード線間のショートである。これ
らは、いずれもエツチングが正規になされた欠陥である
が、これらに対応するに) 、 (,1)および(へ)
はエツチングが不良(ハーフエツチング)のため、斜線
部分の厚さがある程度薄くなっており、やはり欠陥であ
る。(ただし、(へ)はショートであることが欠陥であ
る)。
[Prior Art] An IC device of a semiconductor product has a frame island 1 located approximately in the center of a lead frame 1, an example of which is shown in FIG. 3(a).
An IC chip is mounted on the substrate 1a, and the IC chip is connected to the lead wire 1a. The lead frame 1 is made by drawing a lead v&lb pattern on a thin metal plate and etching it. Lead wires are extremely thin, and defects can occur for some reason during the etching process. An example is shown in Fig. 3(b), (A) is a through hole, (IT) is a defect with an end (hereinafter, (A), (U), etc. are collectively referred to as a defect), (8) is a short circuit between the lead wires. These are all defects that were properly etched, but corresponding to them are ), (,1), and (to).
Due to poor etching (half etching), the thickness of the shaded area is thinner to some extent, which is also a defect. (However, the flaw is that (to) is short).

上記したリード線の欠陥に対して、従来は目視による検
査が行われているが、もとより非能率である。これに対
して、光学式の検査方法が有効であるとして、既に実用
されているプリント基板の外観検査方法または各種の表
面欠陥検査装置を適用することが考えられる。しかしな
がら、これらの検査方法では、不良エツチング部分の検
出には難点がある。以下図によりこれを説明する。
Conventionally, the defects in the lead wires described above have been visually inspected, but this is naturally inefficient. On the other hand, since optical inspection methods are effective, it is conceivable to apply a printed circuit board appearance inspection method or various surface defect inspection apparatuses that are already in practical use. However, these inspection methods have difficulties in detecting defective etched areas. This will be explained below with reference to the drawings.

従来のプリント基板用または各種の表面欠陥用の検査装
置における光学系は、大別して透過光方式と反射光方式
に区分できる。第4[f(a)は透過光方式の原理図で
、被検査体1′は透明な載置台2に載置され、これに対
して光源3より投光レンズ4を介して光を照射する。被
検査体を透過した光線は受光レンズ5により被検査体の
パターンまたは欠陥による散乱先金受光器6で受光する
。いま、被検査体をリードフレームのリード線1aとし
、適当な手段により矢印Cで示す走査を行い、欠陥に対
応する受光器の受光信号の波形分向図の下部に示す、欠
陥として第3図(b)に示した(イ)および(ニ)を例
にとると、それぞれに対する受光信号のアナログ波形と
して(T)がえられる、すなわち、孔(イ)は貫通して
いるので、相当する部分がリード線のない箇所と同じレ
ベルSで検出される。しかし、エツチング不良の欠陥(
ニ)には金属が残っているために透過光がなく、相当す
る信号波形は検出されない。この波形(T)を適当な閾
値りで識別し、さらに極性を反転してデジタル信号[D
] (以下[]でもってデデジルを表す)がえられ、リ
ード線1aの幅寸法Tlおよび貫通孔(イ)の寸法T2
が測定できる。また、これを基準のリードフレームの信
号と比較するなどにより欠陥(イ)の判定を行う方法も
可能である。しかしながら、閾値りの大きさに拘らず不
良エツチング(ニ)の信号はえられない。
Optical systems in conventional inspection apparatuses for printed circuit boards or various surface defects can be roughly divided into transmitted light systems and reflected light systems. 4th f(a) is a diagram showing the principle of the transmitted light method, in which an object to be inspected 1' is placed on a transparent mounting table 2, and a light source 3 irradiates the object with light through a projection lens 4. . The light beam transmitted through the object to be inspected is scattered by a pattern or defect of the object to be inspected by a light receiving lens 5, and is received by a gold receiver 6. Now, using the lead wire 1a of the lead frame as the object to be inspected, scanning as indicated by arrow C is performed using an appropriate means, and the defect shown in the lower part of the waveform distribution diagram of the light reception signal of the light receiver corresponding to the defect is shown in FIG. Taking (a) and (d) shown in (b) as an example, (T) is obtained as the analog waveform of the light reception signal for each. In other words, since the hole (a) is penetrating, the corresponding part is detected at the same level S as where there is no lead wire. However, defects due to poor etching (
In (d), there is no transmitted light because the metal remains, and the corresponding signal waveform is not detected. This waveform (T) is identified using an appropriate threshold, and the polarity is further inverted to create a digital signal [D
] (hereinafter referred to as [detail]) is obtained, and the width dimension Tl of the lead wire 1a and the dimension T2 of the through hole (A) are obtained.
can be measured. It is also possible to determine the defect (a) by comparing this signal with the signal of a reference lead frame. However, no signal indicating defective etching (d) can be obtained regardless of the magnitude of the threshold value.

次に第4図(b)に反射方式の光学系を示す。図(a)
と同様の光源3、載置台2とし被検査体1′の反射光を
光源と同じ側に設けた受光レンズ5により受光器6に受
光する。この場合も上記と同様の欠陥(イ)および(ニ
)とすると、それらに対する受光信号の波形は(R)で
ある、(R)には(イ)に対しては孔の部分に反射光が
ないのでレベルが0として検出される。しかし、(ニ)
はエツチング不良のためにリード線の表面が光沢を失っ
た粗面をなしているので反射性能が低下し、これに相当
して波形が凹んでいる。この凹みを検出するように閾値
Daにより波形を識別すると、[Da]の信号かえられ
るが、に)に対するものはり()に対するものと同様で
区別できず、貫通孔として検出されてしまう。これは不
都合である。また、閾値を変えて(ニ)の凹みより小さ
いDb”C識別した場合は[Dblの信号であるが、図
(a)の[D]と同じで(ニ)は検出されない、このよ
うに、透過光方式、反射光方式のいずれによるもエツチ
ング不良による欠陥は検出されないか、もしくは貫通孔
として誤って検出される。なお、上記では欠陥として第
3図の(イ)と(ニ)を例としたが、他の(本)、(へ
)など任意のエツチング欠陥についても同様に検出でき
ないか、または欠損欠陥もしくはショートとして誤検出
される。
Next, FIG. 4(b) shows a reflection type optical system. Diagram (a)
A light source 3 and a mounting table 2 similar to the above are used, and the reflected light from the object 1' to be inspected is received by a light receiver 6 by a light receiving lens 5 provided on the same side as the light source. In this case as well, assuming the same defects (a) and (d) as above, the waveform of the received light signal for them is (R). Since there is no level, the level is detected as 0. However, (d)
Due to poor etching, the surface of the lead wire has lost its luster and has a rough surface, resulting in a decrease in reflection performance and a correspondingly concave waveform. When the waveform is identified using the threshold value Da to detect this depression, the signal [Da] is changed, but the difference between () and () cannot be distinguished, and it is detected as a through hole. This is inconvenient. Also, if you change the threshold and identify Db"C which is smaller than the concavity in (d), it is a signal of [Dbl, but it is the same as [D] in figure (a), and (d) is not detected. In this way, Defects due to poor etching are either not detected by either the transmitted light method or the reflected light method, or are mistakenly detected as through holes.In addition, in the above example, (a) and (d) in Figure 3 are used as defects. However, other arbitrary etching defects such as (book) and (to) cannot be detected in the same way, or are erroneously detected as missing defects or short circuits.

以上に対して、複雑高度の波形処理技術により(R)に
生じた凹みを摘出することは可能であるが、そのような
方法は多量のリードフレームを迅速に検査するには必ず
しも適当ではない。そこで簡易にして確実な検査方法お
よび装置が望まれる所以である。
Regarding the above, although it is possible to extract the dents caused in (R) using a highly complex waveform processing technique, such a method is not necessarily suitable for quickly inspecting a large number of lead frames. This is why a simple and reliable testing method and device is desired.

[発明の目的] この発明は以上に述べたところに鑑みてなされたもので
、リードフレームのリード線に生じた貫通孔などの欠損
欠陥およびショート欠陥と、エツチング不良による欠陥
を、簡易な光学系と信号処理により区別して検出できる
リードフレームの検査方法およびその装置を提供するこ
とを目的とするものである。
[Object of the Invention] The present invention has been made in view of the above-mentioned problems, and it is possible to eliminate defects such as through-holes and short-circuit defects that occur in the lead wires of lead frames, as well as defects caused by poor etching using a simple optical system. It is an object of the present invention to provide a lead frame inspection method and apparatus that can distinguish and detect lead frames by signal processing.

[問題点を解決するための手段] この発明はICチップの配線用のリードフレームの欠陥
検査方法およびその装置であって、まずその方法を説明
する。被検査のリードフレームに対して、その裏面側お
よび表面側よりそれぞれ照明光を垂直に照射し、該リー
ドフレームによる該裏面側の照明光の透過光の強度と表
面側の照明光による反射光の強度の比をほぼ1:0.5
となるように設定して合成して、同一の受光器で共通に
受光し、該受光器の出力する上記リードフレームに対す
るアナログ信号を、それぞれ異なる 値を設定した2個
の信号検出器で検出してえられる2個のデジタル信号よ
り、上記リードフレームに存在する貫通孔、ショートな
どの欠陥と、エツチング不良(ハーフエ・ソチング)に
よる欠陥とを区別して検出することを特徴とするもので
ある。
[Means for Solving the Problems] The present invention provides a method and apparatus for inspecting defects in lead frames for wiring of IC chips, and the method will first be described. Illumination light is irradiated perpendicularly to the lead frame to be inspected from its back side and front side, and the intensity of the transmitted light of the illumination light on the back side by the lead frame and the reflected light from the front side illumination are measured. Strength ratio approximately 1:0.5
The signals are set and combined so that the light is received in common by the same receiver, and the analog signal for the lead frame output from the receiver is detected by two signal detectors each set to a different value. This method is characterized by distinguishing and detecting defects such as through holes and short circuits existing in the lead frame and defects due to poor etching (half-etching) from the two digital signals obtained.

次にこの発明による装置においては、ガラスなど透明な
載置台にa置された被検査のリードフレームに対して、
その表面側に第1の光源と、該第1の光源よりの投光光
を直角方向に変換して、上記リードフレームに垂直に照
射するハーフミラ−とを設け、また上記リードフレーム
の裏面側に該リードフレームに垂直に照射する第2の光
源とを設ける。上記第2の光源による透過光の強度と、
第1の光源による反射光の強度の比をほぼ1:0゜5に
設定して上記ハーフミラ−で合成し、合成光を受光する
共通受光器と、該共通受光器の出力する上記リードフレ
ームに対するアナログ信号を入力する、それぞれ異なる
閾値を有する2個の信号検出器と、該2個の信号検出器
の出力する2111のデジタル信号より、上記リードフ
レームに存在する貫通孔、ショートなどの欠陥と、エツ
チング不良(ハーフエツチング)による欠陥とを区別し
て検出する信号処理部とにより構成されたものである。
Next, in the apparatus according to the present invention, with respect to the lead frame to be inspected placed on a transparent mounting table such as glass,
A first light source and a half mirror are provided on the front side of the lead frame, and a half mirror that converts the projected light from the first light source into a right angle direction and irradiates the lead frame perpendicularly, and on the back side of the lead frame. A second light source that irradiates the lead frame perpendicularly is provided. the intensity of the transmitted light from the second light source;
The intensity ratio of the light reflected by the first light source is set to approximately 1:0°5, and the light is combined by the half mirror, and the common light receiver receives the combined light, and the common light receiver outputs the light to the lead frame. Two signal detectors inputting analog signals, each having a different threshold value, and 2111 digital signals output from the two signal detectors detect defects such as through holes and short circuits existing in the lead frame, It is comprised of a signal processing section that distinguishes and detects defects caused by etching defects (half etching).

[作用] この発明によるリードフレームの欠陥検査方法において
は、2光源よりの照明光のリードフレームによるそれぞ
れの透過光と反射光の強度の比がほぼ1:0.5である
ために、リード線以外の部分における透過光の受光強度
を1.0として、リード線以外の部分および貫通孔、欠
損部などの透過部では完全に透過するので同じく1.0
であり、またリード線の無欠陥部およびハーフエツチン
グ部では、透過光が全くなく0である。一方、反射光の
受光強度はリード線以外の部分および貫通孔では無反射
で0であるが、リード線部では0.5であり、これに対
して、ハーフエツチング部は光沢を失った■面であたか
も酸化鉛のような色相であり、反射性能が低くて、少な
くともリード線部の半分以下で、従ってこの部分の強度
は0.25程度以下である。これにより、透過光と反射
光の合成光の受光強度は、透過部では1.0、リード線
の無欠陥部では0.5、ハーフエツチング部では0.2
5以下で、受光器の検出したアナログ信号波形はこれに
相当した変化をなす。そこで、この信号を2個の信号検
出器に並列に入力し、一方の検出器の閾値を例えば0.
75として貫通孔のデジタル信号をえ、また他方の検出
器の閾値を約0.4としてハーフエツチング部のデジタ
ル信号をうる。すなわち貫通孔とハーフエツチングを区
別して検出することができるわけである。
[Function] In the lead frame defect inspection method according to the present invention, since the ratio of the intensity of the illumination light from the two light sources to the intensity of the light transmitted by the lead frame and the reflected light is approximately 1:0.5, the lead wire Assuming that the received light intensity of the transmitted light in other parts is 1.0, it is also 1.0 because it is completely transmitted in parts other than the lead wire and in transparent parts such as through holes and defective parts.
In addition, in the defect-free portion and half-etched portion of the lead wire, there is no transmitted light at all. On the other hand, the received intensity of the reflected light is 0 in areas other than the lead wires and through-holes with no reflection, but it is 0.5 in the lead wire areas, and on the other hand, the half-etched areas have lost their luster. It has a hue similar to that of lead oxide, and its reflective performance is low, at least less than half of the lead wire portion, so the intensity of this portion is about 0.25 or less. As a result, the received light intensity of the combined light of transmitted light and reflected light is 1.0 in the transparent part, 0.5 in the defect-free part of the lead wire, and 0.2 in the half-etched part.
5 or less, the analog signal waveform detected by the photoreceiver undergoes a corresponding change. Therefore, this signal is input to two signal detectors in parallel, and the threshold value of one of the detectors is set to, for example, 0.
A digital signal of the through hole is obtained as 75, and a digital signal of the half-etched part is obtained by setting the threshold value of the other detector to about 0.4. In other words, through-holes and half-etching can be detected separately.

次に上記に対する装置においては、ガラスなどの透明な
RW台に被検査のリードフレームを載置し、リードフレ
ームの表面側に設けられた第1の光源よりの投光光は、
ハーフミラ−により直角方向に変換されてリードフレー
ムに垂直に照射され、かつ反射して反射光となる。また
裏面側の第2の光源よりの照明光はリードフレームに垂
直に照射され、透過した透過光は上記の反射光と共軸で
あるのでハーフミラ−で合成されて共通受光器に入力す
る。ここで、必要な条件すなわち透過光と反射光の共通
受光器における強度比をほば1:0゜5に設定する方法
は、実験などにより第1および第2の光源において行う
0両者が合成された段階では、ともに強度が変化するの
で不可能である。
Next, in the apparatus for the above, the lead frame to be inspected is placed on a transparent RW table made of glass or the like, and the light emitted from the first light source provided on the front side of the lead frame is
The light is converted into a right angle direction by a half mirror, is irradiated perpendicularly to the lead frame, and is reflected to become reflected light. Further, the illumination light from the second light source on the back side is irradiated perpendicularly to the lead frame, and since the transmitted light is coaxial with the above-mentioned reflected light, it is combined by the half mirror and input to the common light receiver. Here, the necessary condition, that is, the method of setting the intensity ratio of the transmitted light and the reflected light at the common receiver to approximately 1:0°5, is based on experiments or the like. This is not possible at this stage because the intensity changes in both cases.

共通受光器によりえられるアナログ信号は、上述したそ
れぞれ閾値の異なる2個の信号検出器においてデジタル
信号として出力されて、信号処理部において、上記方法
において説明した処理により、欠損欠陥、ショート欠陥
と、ハーフエツチングの欠陥が区別される。なお、上記
装置の光学系に必要なレンズが具備されている。
The analog signal obtained by the common receiver is outputted as a digital signal by the above-mentioned two signal detectors each having a different threshold value, and in the signal processing section, it is processed as a missing defect, a short defect, Half-etching defects are distinguished. Note that the optical system of the above device is equipped with necessary lenses.

[実施例] 第1図はこの発明による、リードフレームの欠陥検出方
法において、共通受光器に受光された透過光と反射光の
それぞれの信号波形と、それらの合成波形を説明するも
のである。被検査の対象として前記した貫通孔(イ)と
円形のハーフエツチング部に)とするとき、透過部にお
ける透過光の強度を1.0に設定して(T)の波形かえ
られる。これに対して、無欠陥部の反射光の強度を0.
5に設定して、反射光の波形(R)がえられる。(R)
においてハーフエツチング部(ニ)に対しては、その表
面の反射性能の低下により、無欠陥部の0.5の2分の
1以下、すなわち図示α<0.25の凹部となる。さら
にこれらの合成波形は(T) +(R)に示すものとな
り、これに対して2個の閾値D1(約0.75)とD2
  (約0.4)で別個に検出して、それぞれデジタル
信号[Dtlと[D21とかえられる。さらに必要によ
りそれぞれの極性を反転して、−[0+]と−[D21
とし、適当な信号処理部において、図示のT、、T2に
より当初に述べたように貫通孔(イ)を検出してその大
きさを判定し、またT、、T4によりハーフエツチング
部に)を検出してその大きさを判定するものである。
[Example] FIG. 1 illustrates the signal waveforms of transmitted light and reflected light received by a common light receiver and their combined waveform in a lead frame defect detection method according to the present invention. When the object to be inspected is the through hole (A) and the circular half-etched part, the intensity of the transmitted light in the transmitting part is set to 1.0 to change the waveform of (T). On the other hand, the intensity of the reflected light from the defect-free area is set to 0.
5, the waveform (R) of the reflected light can be obtained. (R)
In the half-etched portion (d), due to a decrease in the reflective performance of its surface, it becomes a concave portion of 0.5 or less of the defect-free portion, that is, α<0.25 in the figure. Furthermore, these combined waveforms are shown as (T) + (R), and two threshold values D1 (approximately 0.75) and D2 are applied to this.
(approximately 0.4) and are converted into digital signals [Dtl and [D21], respectively. Furthermore, if necessary, reverse the respective polarities to create −[0+] and −[D21
Then, in an appropriate signal processing unit, the through hole (A) is detected as mentioned above using T, . It detects and determines its size.

第2図は、この発明によるリードフレームの欠陥検出装
置の実施例における全体の構成を示すもので、被検査の
リードフレーム1をガラス板など透明なa置台2に′a
置する。表面側(図示上部側とする)に第1の光源3a
、投光レンズ4aと、この投光光3方向変換するハーフ
ミラ−7とを設けてリードフレームの表面を垂直に照射
する。−方、裏面側に設けた第2の光源3bより投光レ
ンズ4bにより裏面を垂直に照射し、その透過光は上方
に直進する。これと表面側の照射光による反射光とは、
共軸としてハーフミラ−7で合成されて、受光レンズ5
により共通受光器8にリードフレームの映像を結ぶ、こ
こで、載置台2は矢印Cおよびその直角方向に移動して
リードフレーム1が走査されて、受光映像が逐次移動す
るので、受光器8より時間変化する受光信号が出力され
る。
FIG. 2 shows the overall structure of an embodiment of the lead frame defect detection apparatus according to the present invention, in which a lead frame 1 to be inspected is placed on a transparent stand 2 such as a glass plate.
place A first light source 3a is provided on the front side (upper side in the figure).
A projection lens 4a and a half mirror 7 for converting the projection light into three directions are provided to vertically illuminate the surface of the lead frame. - On the other hand, a second light source 3b provided on the back side irradiates the back surface vertically through a projection lens 4b, and the transmitted light travels straight upward. This and the reflected light from the irradiated light on the surface side are:
They are combined by a half mirror 7 as a coaxial light receiving lens 5.
The image of the lead frame is connected to the common light receiver 8. Here, the mounting table 2 moves in the direction of arrow C and the direction perpendicular to it, and the lead frame 1 is scanned, and the received light image moves sequentially. A time-varying light reception signal is output.

受光器8としてリニアセンナが使用される。この場合、
前記したように第1の光源と第2の光源で光強度をNl
!して、共通受光器8における透過光と反射光の強度比
をほば1:0.5として、第1図の受光信号の合成波形
(T)+(R)がえられる。このアナログ信号はそれぞ
れ閾値をDl、D2とする2個の信号検出器9−1.9
−2に並列に入力して、第1図のデジタル信号[Dl]
と [D21が出力され、さらに必要により位相反転器
10−1.10−2により反転してそれぞれ−[Dtl
、−[D21となり、両者が信号処理部11に入力して
所定の欠陥検出および大きさの判定が行われるものであ
る。
A linear sensor is used as the light receiver 8. in this case,
As mentioned above, the light intensity of the first light source and the second light source is Nl.
! Then, by setting the intensity ratio of the transmitted light and the reflected light in the common light receiver 8 to approximately 1:0.5, the composite waveform (T)+(R) of the light reception signal shown in FIG. 1 is obtained. This analog signal is sent to two signal detectors 9-1.9 with thresholds Dl and D2, respectively.
-2 in parallel to the digital signal [Dl] in Figure 1.
and [D21 are output, and if necessary, they are further inverted by phase inverters 10-1 and 10-2 to become -[Dtl
, -[D21, and both are input to the signal processing unit 11 to perform predetermined defect detection and size determination.

以上説明してきたが、実施例では、リードフレームの例
を挙げているが、この発明は、リードフレームのほか、
例えば、メツシュ状のカミソリの刃等のシート状の精密
電子部品とか、エンコーダ等の精密機械部品等にも適用
できる。これらのものは、エツチング後の欠陥の生じ方
がほぼリードフレームと類似したものとなる。
As has been explained above, in the embodiments, an example of a lead frame is given, but the present invention is applicable to not only lead frames but also lead frames.
For example, it can be applied to sheet-like precision electronic parts such as mesh-like razor blades, precision mechanical parts such as encoders, etc. In these materials, the manner in which defects occur after etching is almost similar to that in lead frames.

なお、この発明の検査装置又は検査方法は、リードフレ
ームに限定されるものではないが、特に、リードフレー
ムに適用した場合においてリードフレームの製品規格を
十分に満足し得る検査が行えるという効果を生じる。
Note that the inspection device or the inspection method of the present invention is not limited to lead frames, but particularly when applied to lead frames, it produces the effect of being able to perform inspections that fully satisfy the product standards of lead frames. .

[発明の効果] 以上説明により明らかなように、この発明によるシート
状エツチング精密部品の欠陥検出方法においては、エツ
チング精密部品の裏面側よりの照明光の透過光と、表面
側よりの照明光の反射光のレベル比をほば1:0.5と
して合成し、合成光に対する共通受光器でえられる受光
信号により、従来の反射光方式または透過光方式では不
可能であった貫通孔などの欠陥とハーフエツチングの欠
陥とを確実に区別して検出し、さらに必要な場合には相
当する処理を行うことにより、それらの大きさも判定で
きるものである。その装置における構成は、単に従来の
反射光方式と透過光方式を組合わせた簡易なものである
。このように、この発明によるエツチング精密部品の欠
陥検査方法および装置は複雑高度の信号処理を必要とせ
ず簡易なことが大きな特長であり、エツチング精密部品
の検査のみならず類似のワークの検査にも応用できるな
ど、各種部品の検査技術に寄与する効果には大きいもの
がある。
[Effects of the Invention] As is clear from the above explanation, in the defect detection method for sheet-like etched precision parts according to the present invention, the transmitted illumination light from the back side of the etched precision part and the illumination light from the front side are separated. By combining the reflected light with a level ratio of approximately 1:0.5 and using the received light signal obtained by a common receiver for the combined light, defects such as through holes, which were impossible with conventional reflected light or transmitted light methods, can be detected. By reliably distinguishing and detecting half-etching defects and half-etching defects, and performing corresponding processing if necessary, their sizes can also be determined. The configuration of this device is simply a combination of the conventional reflected light method and transmitted light method. As described above, the defect inspection method and apparatus for etched precision parts according to the present invention have a major feature of being simple and do not require complex signal processing, and can be used not only for inspecting etched precision parts but also for inspecting similar workpieces. It has great potential to contribute to inspection technology for various parts.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、この発明によるリードフレームの欠陥検査方
法における反射光、透過光およびそれらの合成光の受光
信号波形と、貫通孔とハーフエツチングを区別できる原
理を説明するための波形図、第2図はこの発明によるリ
ードフレームの欠陥検査装置の実施例における全本構成
図、第3図(a)および(b)はリードフレームの外観
とリード線に生ずる欠陥の例を示す平面図、第4図(1
)および(b)は、それぞれ従来の透過光方式および反
射光方式によるリードフレームの欠陥の検出信号と、ハ
ーフエツチングが検出不可能であることを説明する受光
信号波形図である。 1−・−リードフレーム、  1a・・−リード線、1
b・・・ICチップ、  1′・・・被検査体、2・・
−31置台、     3−・・光源、4・・−投光レ
ンズ、   5・・−受光レンズ、6・・−受光器、 
    7・・・ハーフミラ−18・・・共通受光器、
   9−・・信号検出器、10−・・位相反転器、 
  II・−信号処理部。
FIG. 1 is a waveform diagram for explaining the received signal waveforms of reflected light, transmitted light, and their combined light in the lead frame defect inspection method according to the present invention, and the principle by which through-holes and half-etching can be distinguished. 3(a) and 3(b) are plan views showing the external appearance of the lead frame and examples of defects occurring in the lead wires. Figure (1
) and (b) are light reception signal waveform diagrams illustrating lead frame defect detection signals by the conventional transmitted light method and reflected light method, respectively, and the fact that half etching cannot be detected. 1--Lead frame, 1a...-Lead wire, 1
b...IC chip, 1'...Test object, 2...
-31 mounting stand, 3...-light source, 4...-light emitting lens, 5...-light receiving lens, 6...-light receiver,
7...Half mirror-18...Common receiver,
9--signal detector, 10--phase inverter,
II.-Signal processing section.

Claims (4)

【特許請求の範囲】[Claims] (1)検査対象となるシート状のエッチング精密部品に
対して、該エッチング精密部品の裏面側および表面側よ
りそれぞれ照明光を垂直に照射し、該エッチング精密部
品による該裏面側の照明光の透過光と該表面側の反射光
を合成し、該透過光の強度と、該反射光の強度との比を
ほぼ1:0.5となるように設定して同一の受光器で共
通に受光し、該受光器の出力する上記エッチング精密部
品に対するアナログ信号を、それぞれに異なる閾値を設
定した2個の信号検出器で検出してえられる2つの信号
波形より、上記エッチング精密部品に存在する貫通孔、
ショートなどの欠陥と、ハーフエッチング等のエッチン
グ不良による欠陥とを区別して検出することを特徴とす
る、シート状エッチング精密部品の欠陥検査方法。
(1) Illumination light is irradiated perpendicularly to the sheet-like etched precision part to be inspected from the back side and the front side of the etched precision part, and the illumination light from the back side is transmitted by the etched precision part. The light and the reflected light from the surface side are combined, and the ratio of the intensity of the transmitted light to the intensity of the reflected light is set to approximately 1:0.5, and the light is commonly received by the same receiver. , from the two signal waveforms obtained by detecting the analog signal for the etched precision part output from the light receiver with two signal detectors each having a different threshold value, the through hole existing in the etched precision part is detected. ,
A defect inspection method for sheet-shaped etched precision parts, which distinguishes and detects defects such as short circuits and defects due to poor etching such as half etching.
(2)エッチング精密部品はリードフレームであること
を特徴とする特許請求の範囲第1項記載のシート状エッ
チング精密部品の欠陥検査方法。
(2) The defect inspection method for a sheet-like etched precision part according to claim 1, wherein the etched precision part is a lead frame.
(3)ガラス板などの透明な載置台に載置された検査の
対象となるシート状のエッチング精密部品の表面側に第
1の光源と、該第1の光源よりの投光光を直角方向に変
換して、上記エッチング精密部品に垂直に照射するハー
フミラーとを設け、上記エッチング精密部品の裏面側に
該エッチング精密部品に垂直に照射する第2の光源とを
設け、上記第2の光源によるエッチング精密部品の透過
光と上記第1の光源によるエッチング精密部品の反射光
の強度の比をほぼ1:0.5に設定して上記ハーフミラ
ーで合成し、該合成光を受光する共通受光器と、該共通
受光器の出力する上記エッチング精密部品に対するアナ
ログ信号を並列に入力する、それぞれ異なる閾値を有す
る2個の信号検出器と、該2個の信号検出器の検出する
2個のデジタル信号より、上記エッチング精密部品に存
在する貫通孔、ショートなどの欠陥と、ハーフエッチン
グ等のエッチング不良による欠陥とを区別して検出する
信号処理部とにより構成されたことを特徴とする、シー
ト状エッチング精密部品の欠陥検査装置。
(3) A first light source is placed on the surface side of a sheet-like etched precision part to be inspected that is placed on a transparent mounting table such as a glass plate, and the light emitted from the first light source is directed at right angles. a half mirror that irradiates the etched precision part perpendicularly, and a second light source that irradiates the etched precision part perpendicularly on the back side of the etched precision part; The ratio of the intensity of the transmitted light of the etched precision part by the light source and the reflected light of the etched precision part by the first light source is set to approximately 1:0.5, and the light is combined by the half mirror, and the combined light is received. two signal detectors, each having a different threshold value, into which the analog signals for the etched precision parts output from the common light receiver are input in parallel; and two digital signals detected by the two signal detectors. A sheet-like etching device comprising a signal processing unit that distinguishes and detects defects such as through holes and short circuits existing in the etched precision parts and defects due to poor etching such as half etching based on signals. Defect inspection equipment for precision parts.
(4)エッチング精密部品はリードフレームであること
を特徴とする特許請求の範囲第3項記載のシート状エッ
チング精密部品の欠陥検査装置。
(4) The defect inspection device for sheet-like etched precision parts according to claim 3, wherein the etched precision parts are lead frames.
JP30282987A 1987-11-30 1987-11-30 Method and device for inspecting defect of sheet-like etching precision component Pending JPH01143940A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30282987A JPH01143940A (en) 1987-11-30 1987-11-30 Method and device for inspecting defect of sheet-like etching precision component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30282987A JPH01143940A (en) 1987-11-30 1987-11-30 Method and device for inspecting defect of sheet-like etching precision component

Publications (1)

Publication Number Publication Date
JPH01143940A true JPH01143940A (en) 1989-06-06

Family

ID=17913593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30282987A Pending JPH01143940A (en) 1987-11-30 1987-11-30 Method and device for inspecting defect of sheet-like etching precision component

Country Status (1)

Country Link
JP (1) JPH01143940A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0579825A (en) * 1991-09-19 1993-03-30 Dainippon Screen Mfg Co Ltd Inspecting method for pattern of shadow mask
EP0787289A1 (en) * 1994-07-13 1997-08-06 Kla Instruments Corporation Automated photomask inspection apparatus and method
JP2008096296A (en) * 2006-10-12 2008-04-24 Lasertec Corp Foreign matter inspection method and foreign matter inspecting system using the same
KR20160077425A (en) * 2014-12-23 2016-07-04 주식회사 포스코 Apparatus and method for detecting 3d-suface defect using etching surface

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0579825A (en) * 1991-09-19 1993-03-30 Dainippon Screen Mfg Co Ltd Inspecting method for pattern of shadow mask
EP0787289A1 (en) * 1994-07-13 1997-08-06 Kla Instruments Corporation Automated photomask inspection apparatus and method
EP0787289A4 (en) * 1994-07-13 1997-08-06
JP2008096296A (en) * 2006-10-12 2008-04-24 Lasertec Corp Foreign matter inspection method and foreign matter inspecting system using the same
KR20160077425A (en) * 2014-12-23 2016-07-04 주식회사 포스코 Apparatus and method for detecting 3d-suface defect using etching surface

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