JPH01140778A - Thin-film photovoltaic element - Google Patents
Thin-film photovoltaic elementInfo
- Publication number
- JPH01140778A JPH01140778A JP62299280A JP29928087A JPH01140778A JP H01140778 A JPH01140778 A JP H01140778A JP 62299280 A JP62299280 A JP 62299280A JP 29928087 A JP29928087 A JP 29928087A JP H01140778 A JPH01140778 A JP H01140778A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- thin
- film
- type
- cu2s
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 65
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 239000010408 film Substances 0.000 abstract description 12
- 239000000463 material Substances 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 230000003247 decreasing effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、太陽電池や光センサー等の薄膜光起電力素子
に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to thin film photovoltaic devices such as solar cells and optical sensors.
、太陽光その他の光エネルギーを電気エネルギーに変換
する素子として、太陽電池や光センサー等の薄膜光起電
力素子が知られている。2. Description of the Related Art Thin film photovoltaic elements such as solar cells and optical sensors are known as elements that convert sunlight and other light energy into electrical energy.
従来からかかる光起電力素子として、ＳｉＨガス等をグ
ロー放電分解して形成されるアモルファスシリコン（ａ
−Ｓ ｉ ）の薄膜が安価で大面積化及び薄膜化が可
能であるため、ａ−３ｉ薄膜を利用した素子が広く用い
られている。例えば特公昭５３−３７７１８号公報に開
示されているように、ａ−３ｉのｐ−１−ｎ接合やショ
ットキ接合を利用した太陽電池がある。Conventionally, such photovoltaic elements have been made of amorphous silicon (a
-S i ) thin films are inexpensive and can be made large in area and thin, so elements using a-3i thin films are widely used. For example, as disclosed in Japanese Patent Publication No. 53-37718, there is a solar cell using an a-3i p-1-n junction or a Schottky junction.
しかし、従来のａ−３ｉ太陽電池はａ −Ｓ ｉのバン
ドギャップエネルギーが１．７５ ｅＶ程度である為７
００ ｎｍ以上の波長の光に対しては感度がなく、従っ
て７００ ｎｍ以上の長波長の光を多く含む太陽光に対
しては最適な材料とは云いえず、その変換効率は１０％
以下に留まっていた。However, in the conventional a-3i solar cell, the bandgap energy of a-Si is about 1.75 eV, so 7
It is not sensitive to light with a wavelength of 00 nm or more, so it cannot be said to be an optimal material for sunlight, which contains a lot of light with long wavelengths of 700 nm or more, and its conversion efficiency is only 10%.
It stayed below.
長波長の光に対する感度を向上させる為にａ −８１と
他の半導体材料とを組合わせた太陽電池も、例えばＪａ
ｐａｎｅｓｅ 、Ｔｏｕｒｎａｊ ｏｆ Ａｐｐｌｉｅ
ｄ Ｐｈｙｓｉｃｓ、ｖｏ１２２、Ａ９ （１９８３）
Ｌ６０５〜Ｌ６０７に示されている。しかしながら、
こ−に示されたａ−３ｉと単結晶Ｓ１を組合せた太陽電
池においても変換効率は１０％程度であり、しかも単結
晶Ｓ１は大面積化が困難で材料コストも極めて高い蝉の
欠点かあった。Solar cells that combine a-81 with other semiconductor materials to improve sensitivity to long wavelength light have also been developed, such as Ja
Panese, Tournaj of Applie
d Physics, vo122, A9 (1983)
It is shown in L605-L607. however,
Even in the solar cell shown here that combines A-3i and single-crystal S1, the conversion efficiency is about 10%, and single-crystal S1 is difficult to increase in area and has extremely high material costs. Ta.
又、硫化銅薄膜と硫化カドミウム薄膜とを積層した太陽
電池も、例えば「太陽光発電」１森北出版１９８０年２
月２０日発行に記載されている。しかしながら、この太
陽電池も又変換効率が７％程度であって、電力用太陽電
池として使用するには変換効率が不充分であった。In addition, solar cells in which a copper sulfide thin film and a cadmium sulfide thin film are laminated are also available, for example in "Solar Power Generation" 1 Morikita Publishing 1980 2
It is listed in the 20th issue of the month. However, this solar cell also had a conversion efficiency of about 7%, which was insufficient for use as a power solar cell.
本発明はかかる従来の事情に鑑み、大面積化及び薄膜化
が可能な材料を用いて、変換効率が高く且つ低コストの
簿膜光起電力素子を提供することを目的とするものであ
る。In view of such conventional circumstances, it is an object of the present invention to provide a thin film photovoltaic element with high conversion efficiency and low cost, using a material that can be made larger in area and thinner.
本発明の薄膜光起電力素子は、互いに接合して積層すせ
たアモルファスシリコン薄膜と硫化銅薄膜とを具えたこ
とを特徴とする。The thin film photovoltaic device of the present invention is characterized by comprising an amorphous silicon thin film and a copper sulfide thin film that are bonded to each other and laminated.
本発明ではアモルファスシリコン（ａ−３ｉ） 薄膜と
硫化鋼（ＣｕＳ）薄膜とがｐ−ｎ接合を形成する限す、
ａ−８ｉ薄膜はｎ−１−ｐ−ｎ構造などの多層構造であ
ってもよい。In the present invention, as long as the amorphous silicon (a-3i) thin film and the sulfide steel (CuS) thin film form a p-n junction,
The a-8i thin film may have a multilayer structure such as an n-1-pn structure.
又、ｎ型及びｐ型のａ−３ｉ薄膜は微結晶を含んでいて
も良い。Further, the n-type and p-type a-3i thin films may contain microcrystals.
薄膜光起電力素子のへテロ接合を形成する半導体材料を
種々検討した結果、ａ−９ｉ薄膜とＯｕ Ｓ薄膜との組
合わせが最適であることが判明した。As a result of examining various semiconductor materials for forming the heterojunction of a thin film photovoltaic device, it was found that the combination of an a-9i thin film and an OuS thin film is optimal.
即ち、ヘテロ接合はバンドギャップエネルギーの組合せ
のみならず、電子親和力、エネルギーバンドの連続性な
どの半導体材料のマツチング特性、あるいは薄膜形成方
法などにより大きく左右され、その結果デバイス特性も
大さく変動する。ａ−８ｉ薄膜とＣｕ Ｓ薄膜とはこの
様なヘテロ接合に要求される特性が最も整っている。又
、Ｃｕ Ｓのパンドエネルギーギャップも１．２ ｅＶ
と光起電力素子用材料として好適である。That is, heterojunctions are greatly influenced not only by the combination of band gap energies, but also by the matching characteristics of semiconductor materials such as electron affinity and continuity of energy bands, and by the method of forming thin films, and as a result, the device characteristics also vary greatly. The a-8i thin film and the CuS thin film have the best characteristics required for such a heterojunction. Also, the pando energy gap of CuS is also 1.2 eV
It is suitable as a material for photovoltaic devices.
しかも、ａ−８ｉとＯｕ Ｓは現在の薄膜技術により容
易に薄膜化及び大面積化することがでさ、構成材料も安
価であって低コスト化が可能である。Furthermore, a-8i and OuS can be easily made thinner and larger in area using current thin film technology, and the constituent materials are inexpensive, making it possible to reduce costs.
ａ−８ｉ薄膜とＣｕＳ薄膜とはいずれがｐ型でもｎ型で
もよいが、製造上はａ−８ｉ薄膜をｎ型とし、ＣｕＳ薄
膜をｐ型とする方が容易であって変換動率も高い。この
場合、ｎ型ａ−８ｉ薄膜の膜厚は２００′ｊ、〜３００
０χが好ましい。この膜厚が２００ Ｘ未満では良好な
接合が得られず、３ｏｏｏＸｅ超えるとａ−３ｉ薄膜で
の光吸収が大きくなり、いずれも変換効率を著しく低下
させるからである。Both the a-8i thin film and the CuS thin film may be p-type or n-type, but from a manufacturing standpoint, it is easier to make the a-8i thin film n-type and the CuS thin film p-type, and the conversion rate is higher. . In this case, the thickness of the n-type a-8i thin film is 200′j, ~300′
0χ is preferred. This is because if the film thickness is less than 200X, a good bond cannot be obtained, and if it exceeds 300Xe, the light absorption in the a-3i thin film becomes large, and in either case, the conversion efficiency is significantly reduced.
実施例１ 第１図に示す太陽電池を製造した。 Example 1 A solar cell shown in FIG. 1 was manufactured.
ステンレス鋼の基板１上に、基板温度４００Ｃで真空蒸
着法により膜厚０．４μｍのｐ型Ｃｕ Ｓ薄膜２を形成
した。次に、このｐ型Ｏｕ Ｓ薄膜２上にｎ型ａ−３ｉ
薄膜３を、基板温度２００ＣでのＳｉＨ％ＰＨ及びＨか
らなる原料ガスのグロー放電分解により、膜厚４５０ｘ
に形成した。更に、錫とインジウムを酸化雰囲気（１０
−’ｔｏｒｒ以下）で真空蒸着して、ｎ型ａ−３ｉ薄展
３上に膜厚０．２μｍの酸化インジウム錫の金属電極４
を形成した。A p-type CuS thin film 2 having a thickness of 0.4 μm was formed on a stainless steel substrate 1 by vacuum evaporation at a substrate temperature of 400C. Next, on this p-type OuS thin film 2, an n-type a-3i
The thin film 3 was formed to a film thickness of 450x by glow discharge decomposition of a raw material gas consisting of SiH%PH and H at a substrate temperature of 200C.
was formed. Furthermore, tin and indium were placed in an oxidizing atmosphere (10
A metal electrode 4 of indium tin oxide with a film thickness of 0.2 μm is deposited on the n-type a-3i thin spread 3 by vacuum evaporation at
was formed.
得られた太陽電池の出力特性をＡＭｌ、５で１００ｍＷ
／Ｑ％の光のもとで測定したところ、変換効率１１％が
得られた。The output characteristics of the obtained solar cell are 100 mW at AMl, 5.
When measured under light of /Q%, a conversion efficiency of 11% was obtained.
実施例２
第２図に示すｎ−１−ｐ＝ｎ構造のａ−８ｉ薄膜とＯｕ
２ Ｓ薄膜とを具えた太陽電池を製造した。Example 2 A-8i thin film with n-1-p=n structure shown in FIG. 2 and Ou
A solar cell with a 2S thin film was manufactured.
実施例１と同様にしてステンレス鋼の基板１上にＣｕＳ
薄膜２と第１のｎ型ａ−３ｉ薄膜３′を形成した後、グ
ロー放電分解により膜厚２００Ｒのｐ型ａ−３ｉ薄膜５
、膜厚０．５μｍの１型ａ−３ｉ薄膜６、及び膜厚１５
０ｘの第２のｎ型ａ−３ｉ薄膜７を順次形成した。CuS was deposited on the stainless steel substrate 1 in the same manner as in Example 1.
After forming the thin film 2 and the first n-type a-3i thin film 3', a p-type a-3i thin film 5 with a film thickness of 200R is formed by glow discharge decomposition.
, 1 type a-3i thin film 6 with a film thickness of 0.5 μm, and a film thickness of 15
A second n-type a-3i thin film 7 of 0x was sequentially formed.
使用した原料ガスは、ｐ型ａ−３ｉ薄膜５が５ｉＨ−。The raw material gas used was 5iH- for the p-type a-3i thin film 5.
ＢＨ及びＨ，ｉ型ａ−８ｉ薄瞑６がＳｉＨ及びＨ１第２
のｎ型ａ−３ｉ薄膜７がＳｉＨ、ＰＨ及びＨであった。BH and H, i type a-8i thin 6 is SiH and H1 second
The n-type a-3i thin film 7 was SiH, PH and H.
更に、第２のｎ型ａ−８ｉ薄膜７上に実施例１と同様に
金属電極４を形成した。Furthermore, a metal electrode 4 was formed on the second n-type a-8i thin film 7 in the same manner as in Example 1.
得られた太陽電池の出力特性をＡＭｌ、’５で１００ｍ
Ｗ／備の光のもとで測定したところ、変換効率１４％が
得られた。The output characteristics of the obtained solar cell are AMl, 100 m at '5.
When measured under W/Bei light, a conversion efficiency of 14% was obtained.
尚、いずれの実施例においても、ＣｕＳ薄膜成脱時の基
板温度がａ−８ｉ薄膜の基板温度よりも高い方が好まし
い。従って、成膜順序はＣ！ｕＳＮ膜を先に成膜丁べさ
である。Incidentally, in any of the examples, it is preferable that the substrate temperature during the deposition and desorption of the CuS thin film is higher than the substrate temperature of the a-8i thin film. Therefore, the film formation order is C! The uSN film is deposited first.
本発明によれば、通常の薄膜化技術により大面積で変換
効率の高い太陽電池などの薄膜光起電力累子を低コスト
で提供することができる。According to the present invention, a thin film photovoltaic capacitor such as a solar cell having a large area and high conversion efficiency can be provided at low cost using ordinary thin film forming techniques.
第１図は本発明の太陽電池の一例を示す断面図であり、
第２図は本発明の太＠電池の別の一例を示す断面図であ
る。
１・・基板 ２・・ｐ型Ｃｕ Ｓ薄膜
３・・ｎ型ａ−３ｉ薄膜
３′・・第１のｎ型ａ−３ｉ薄膜
４・・金属電極 ５・・ｐ型ａ−３ｉ、薄膜６・・１型
ａ−８ｉ薄膜
７・・第２のｎ型ａ−８ｉ薄膜
出願人 住友電気工業株式会社
、＼
代理人 弁理土中村勝成（外１名＞ ；、ｌｊ・ 、
〕−デ
第１図
第２図FIG. 1 is a cross-sectional view showing an example of the solar cell of the present invention,
FIG. 2 is a sectional view showing another example of the thick battery of the present invention. 1... Substrate 2... P-type Cu S thin film 3... N-type a-3i thin film 3'... First n-type a-3i thin film 4... Metal electrode 5... P-type a-3i, thin film 6 ...Type 1 A-8I thin film 7...Second N-type A-8I thin film Applicant: Sumitomo Electric Industries, Ltd.\ Agent: Patent Attorney Katsunari Donakamura (1 other person);, lj.
] - Figure 1 Figure 2
Claims (3)
薄膜と硫化銅薄膜とを具えたことを特徴とする薄膜光起
電力素子。(1) A thin film photovoltaic device characterized by comprising an amorphous silicon thin film and a copper sulfide thin film bonded to each other and laminated.
薄膜がｐ型であることを特徴とする、特許請求の範囲（
１）項記載の薄膜光起電力素子。(2) Claims characterized in that the amorphous silicon thin film is n-type and the copper sulfide thin film is p-type (
The thin film photovoltaic device described in item 1).
〜３０００Åであることを特徴とする、特許請求の範囲
（２）項記載の薄膜光起電力素子。(3) Thickness of n-type amorphous silicon thin film is 200 Å
The thin film photovoltaic device according to claim (2), characterized in that the thickness is 3000 Å.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299280A JPH01140778A (en) | 1987-11-27 | 1987-11-27 | Thin-film photovoltaic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299280A JPH01140778A (en) | 1987-11-27 | 1987-11-27 | Thin-film photovoltaic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01140778A true JPH01140778A (en) | 1989-06-01 |
Family
ID=17870499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62299280A Pending JPH01140778A (en) | 1987-11-27 | 1987-11-27 | Thin-film photovoltaic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01140778A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979645A (en) * | 2019-03-29 | 2019-07-05 | 合肥工业大学 | A kind of p-type copper sulfide transparent conducting film and preparation method |
-
1987
- 1987-11-27 JP JP62299280A patent/JPH01140778A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109979645A (en) * | 2019-03-29 | 2019-07-05 | 合肥工业大学 | A kind of p-type copper sulfide transparent conducting film and preparation method |
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