CN109979645A - A kind of p-type copper sulfide transparent conducting film and preparation method - Google Patents
A kind of p-type copper sulfide transparent conducting film and preparation method Download PDFInfo
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/10—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances sulfides
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- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
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Abstract
The present invention relates to a kind of p-type copper sulfide transparent conducting film and preparation methods.The copper sulfide transparent conducting film is when sheet resistance is down to 10 ohm/, it is seen that the transmitance of optical range is up to 86%, and resistivity is optimal to can reach 1.02 × 10‑4Ω·cm；Copper sulfide contained in the p-type copper sulfide film is p-type semiconductor material, and bandgap range is 1.5-2.0 eV.The operating procedure for preparing copper sulfide transparent conducting film includes: to mix aminated compounds, sulfhydryl compound and copper precursors in a solvent to react, and obtains precursors reaction solution；The precursors reaction solution heats substrate, obtain p-type copper sulfide transparent conducting film in substrate after wet processing techniques form a film.This method can realize that a step directly prepares copper sulfide transparent conducting film, and preparation cost is low, can realize prepared by magnanimity by lifting coating method, and the copper sulfide transparent conducting film of preparation has lower sheet resistance and a higher transmitance, and performance is close to N-shaped transparent conductive film.
Description
Technical field
The invention belongs to the technical fields of transparent conductive film, and in particular to a kind of p-type copper sulfide transparent conducting film and
Preparation method.
Background technique
Transparent conductive film is exactly to have taken into account transparent and conductive two kinds of property, not only transparent in visible-range inner height but also tool
There is the film of satisfactory electrical conductivity.Since the characteristic of its electrically conducting transparent makes it in thin-film solar cells, flat-panel monitor, luminous two
Pole pipe, low emissivity glass etc. have great application value.Transparent conductive film can be with according to the types of conducting carriers
It is divided into N-shaped and p-type, although transparent conductive film huge number, application is also relatively broad, and most of is all only by them
As single optical coating, there is no active device is further prepared as, this is because most electrically conducting transparents are thin
Film is all n-type material, lacks the p-type transparent conductive film material that photoelectric properties can be matching.For a long time, N-shaped is transparent
Still application has all been more than p-type material to conductive film material either performance from far away, up to the present, it is raw can to put into business
The transparent conductive film of production is N-shaped transparent conductive film, this also significantly limits the application range of transparent conductive film, because
This p type transparent conductive film material also becomes the hot spot of the research in transparent conductive film field.
The p-type transparent conductive material having now been found that mainly includes the following three types: p-type delafossite structure oxide, p
Type chalcogen compound and p-type ZnO based compound.Although transmitance is in the visible-range of some p-type transparent conductive films
Through close even identical as n type transparent conductive film, still, electric conductivity also has not with n profile material till now
The gap that can go beyond.
The method for preparing transparent conductive film is more, but is all first to prepare transparent conductive film material, passes through again later
The methods of the other methods such as true plating method of magnetron sputtering method, vacuum, chemical vapour deposition technique are by transparent conductive film material and base
Bottom plate combine, step is relatively complicated, and is difficult to realize be mass produced, in consideration of it, develop it is a kind of on a large scale directly prepare it is transparent
The method of conductive film is very important.
Summary of the invention
In order to improve the performance of p-type transparent conductive film, simplifies the preparation process of transparent conductive film, realize extensive raw
It produces, the present invention provides a kind of p-type copper sulfide transparent conducting film and preparation method.
A kind of p-type copper sulfide transparent conducting film, with a thickness of 40-60 nm, copper sulfide contained therein is p-type semiconductor
Material；Transmitance is 82-86% in visible-range, square resistance is 10-18 ohm, resistivity be (1.02-1.23) ×
10-4 Cm, bandgap range are 1.5-2.0 eV.
The operating procedure for preparing p-type copper sulfide transparent conducting film is as follows:
(1) copper precursor solution is prepared
By 0.5-10 mmol copper oxide (CuO) or cuprous oxide (Cu2O it) is put into 7-40 mL solvent, is heated to temperature 40-70
DEG C, 0.1-6 mL carbon disulfide and 1-10 mL aminated compounds are added while stirring, stirring to copper oxide (CuO) or oxidation are sub-
Copper (Cu2O it) is completely dissolved, obtains copper precursors reaction solution；Copper precursors reaction solution is centrifugated, clear copper precursors are obtained
Solution；
Solvent is dehydrated alcohol or chloroform or one of toluene or acetone；
Aminated compounds is n-butylamine or one of ethanol amine or ethylenediamine；
(2) p-type copper sulfide transparent conducting film is prepared
By copper precursor solution, wet processing forms a film on substrate plate, anneals 0.2-1 minutes under the conditions of 160-220 DEG C of temperature,
Obtain the p-type copper sulfide transparent conducting film with a thickness of 40-60 nm.
The technical solution further limited is as follows:
In step (1), centrifugal condition: 8000-12000 revs/min of revolving speed, time 1-5 minute.
In step (2), the material of the substrate plate is glass or plastics or ceramics or silicon wafer.
In step (2), the wet processing is spray coating method or spin-coating method or lifting coating method or knife coating.
Advantageous effects of the invention embody in the following areas:
It is more than that most of other p-types are transparent 1. p-type copper sulfide transparent conducting film photoelectric properties prepared by the present invention are outstanding
Conductive film, carrier concentration with higher, higher visible light transmittance, lower sheet resistance, these three technical indicators connect
The level of nearly now widely used ITO, and copper sulfide transparent conducting film prepared by the present invention is p-type, in conjunction with current technology
Mature N-shaped transparent conductive film material, so that it is in transparent p-n junction, transparent field effect transistor, solar battery
Equal fields have great application value.The results showed that using p-type copper sulfide transparent conducting film prepared by the present invention,
Minimum 10 Ω of its sheet resistance/, transmitance are up to 86%.
2. preparation process of the invention is simple, and is convenient for post-processing, compared to the side of other transparent conductive films preparation
Method is thin without preparing electrically conducting transparent early period the present invention provides a kind of method for directly preparing p-type copper sulfide transparent conducting film
Copper precursor solution is formed p-type copper sulfide transparent conducting film by reaction directly on substrate plate, will prepared transparent by membrane material
Process of the process, transparent conductive film material of conductive film material in conjunction with substrate plate merges, and makes conventional transparent conductive film
Relatively complicated step effectively simplifies in preparation process.
3. tradition prepares method such as saturating method of vacuum sputtering, vacuum evaporation of transparent conductive film material etc., preparation it is saturating
Bright conductive film is since its matter is crisp frangible, and flexibility and bending property are poor, suitable for application in flexible substrates.In the present invention
A kind of preparation method of p-type copper sulfide transparent conducting film, substrate plate can be selected plastic-substrates such as polyimides, make it in flexibility
The fields such as photoelectric device such as flexible LED, flexible Touch Screen have broad application prospects.
4. compared with other methods, lift coating method used in the present invention, advantage be can to carry out two-sided film and
The film of irregular surface is suitble to large area operation.The thickness of film can be down to Nano grade, and the utilization rate of solution is non-
Chang Gao economizes on resources.
Specific embodiment
The present invention is further described below by embodiment.
Embodiment 1
Steps are as follows for a kind of preparation manipulation of p-type copper sulfide transparent conducting film:
(1) copper precursors reaction solution is prepared, 1 mmol copper oxide (CuO) and 7 mL dehydrated alcohols are added in conical flask, will be filled
There is the conical flask of above-mentioned substance to be placed on 60 DEG C of warm table, 0.6 mL carbon disulfide and the positive fourth of 1 mL are separately added under stirring
Amine, stirring to solid are completely dissolved, and form copper precursors reaction solution；
In centrifuge, it is centrifuged 3 minutes under the conditions of 8000 revs/min of revolving speed, obtains clear copper precursor solution.
(2) by copper precursor solution on substrate of glass plate spin-coating film, then anneal 1 minute at 180 DEG C, obtain thickness
Degree is about the p-type copper sulfide transparent conducting film of 50 nm, and copper sulfide contained in p-type copper sulfide transparent conducting film is p-type half
Conductor material；P-type copper sulfide transparent conducting film transmitance in visible-range is 86%, square resistance is about 10 ohm, electricity
Resistance rate is 1.02 × 10-4 Cm, band gap are 1.6 eV.
Embodiment 2
Steps are as follows for a kind of preparation manipulation of p-type copper sulfide transparent conducting film:
(1) copper reacting precursor solution is prepared, by 0.5 mmol cuprous oxide (Cu2O it) is added in conical flask, will fill with 7 mL chloroforms
There is the conical flask of above-mentioned substance to be placed on 60 DEG C of warm table, 0.6 mL carbon disulfide and the positive fourth of 1 mL are separately added under stirring
Amine, stirring to solid are completely dissolved, and form copper precursors reaction solution；
In centrifuge, it is centrifuged 5 minutes under the conditions of 12000 revs/min of revolving speed, obtains clear copper precursor solution.
(2) by copper precursor solution on plastic-substrates plate spin-coating film, then anneal 1 minute at 200 DEG C, obtain thickness
Degree is about the p-type copper sulfide transparent conducting film of 45 nm, and copper sulfide contained in p-type copper sulfide transparent conducting film is p-type half
Conductor material.P-type copper sulfide transparent conducting film transmitance in visible-range is 85%, square resistance is about 11 ohm, electricity
Resistance rate is 1.23 × 10-4 Cm, band gap are about 1.6 eV.
Embodiment 3
Steps are as follows for a kind of preparation manipulation of p-type copper sulfide transparent conducting film:
(1) copper precursors reaction solution is prepared, by 0.5 mmol cuprous oxide (Cu2O it) is added in conical flask, will fill with 7 mL acetone
There is the conical flask of above-mentioned substance to be placed on 60 DEG C of warm table, 0.6 mL carbon disulfide and 1 mL second two are separately added under stirring
Amine, stirring to solid are completely dissolved, and form copper precursors reaction solution；
In centrifuge, it is centrifuged 3 minutes under the conditions of 10000 revs/min of revolving speed, obtains clear copper precursor solution.
(2) copper precursor solution is formed a film on transparent ceramic base plate using spray coating method, is then annealed 1 point at 200 DEG C
Clock obtains the p-type copper sulfide transparent conducting film that thickness is about 50 nm.P-type copper sulfide transparent conducting film is in visible-range
Interior transmitance is 82%, square resistance is about 13 ohm, resistivity is 1.21 × 10-4 Cm, band gap are about 1.7 eV.
Embodiment 4
Steps are as follows for a kind of preparation manipulation of p-type copper sulfide transparent conducting film:
(1) copper precursors reaction solution is prepared, by 4 mmol cuprous oxide (Cu2O it) is added in conical flask, will fill with 30 mL chloroforms
There is the conical flask of above-mentioned substance to be placed on 60 DEG C of warm table, 4.8 mL carbon disulfide and the positive fourth of 8 mL are separately added under stirring
Amine, stirring to solid are completely dissolved, and form copper precursors reaction solution；
In centrifuge, it is centrifuged 5 minutes under the conditions of 12000 revs/min of revolving speed, obtains clear copper precursor solution.
(2) copper precursors reaction solution configured before 40 mL is added in the beaker of 50 mL, substrate of glass plate is soaked
Enter in beaker, is formed a film, finally heated film 30 seconds on 220 DEG C of warm table, obtaining thickness is about using lifting coating method
The p-type copper sulfide transparent conducting film of 40 nm.P-type copper sulfide transparent conducting film in visible-range transmitance be 86%,
Square resistance is about 10 ohm, resistivity is 1.16 × 10-4 Cm, band gap are about 1.5 eV.
Embodiment 5
Steps are as follows for a kind of preparation manipulation of p-type copper sulfide transparent conducting film:
(1) copper precursors reaction solution is prepared, by 0.5 mmol cuprous oxide (Cu2O it) is added in conical flask with 7 mL toluene, it will
Conical flask equipped with above-mentioned substance is placed on 60 DEG C of warm table, and 0.6 mL carbon disulfide and 1 mL ethyl alcohol are separately added under stirring
Amine, stirring to solid are completely dissolved, and form copper precursors reaction solution；
In centrifuge, it is centrifuged 5 minutes under the conditions of 12000 revs/min of revolving speed, obtains clear copper precursor solution.
(2) it is formed a film by knife coating in transparent polyimide-based on piece, last laminated film adds in 160 DEG C of baking oven
Heat 20 seconds, forms p-type copper sulfide transparent conducting film flexible, thickness is about 53nm.P-type copper sulfide transparent conducting film is can
Transmitance is 84% in light-exposed range, square resistance is about 18 ohm, resistivity is 1.09 × 10-4 Cm, band gap are about 1.6
eV。
Embodiment 6
Steps are as follows for a kind of preparation manipulation of p-type copper sulfide transparent conducting film:
(1) copper precursors reaction solution is prepared first, will 10 mmol CuO, 40 mL dehydrated alcohols will be added in conical flask, and will filled
There is the conical flask of above-mentioned substance to be placed on 60 DEG C of warm table, 6 mL carbon disulfide and 10 mL n-butylamines be separately added under stirring,
Stirring to solid is completely dissolved, and forms copper precursors reaction solution；
In centrifuge, it is centrifuged 5 minutes under the conditions of 12000 revs/min of revolving speed, obtains clear copper precursor solution.
(2) copper precursors reaction solution configured before 40 mL is added in the beaker of 50 mL, by transparent ceramic base
It immerses in beaker, is formed a film using lifting coating method, film is heated 0.5 minute on 200 DEG C of warm table finally, obtains thickness
The about p-type copper sulfide transparent conducting film of 45 nm.P-type copper sulfide transparent conducting film transmitance in visible-range is
85%, square resistance is about 12 ohm, resistivity is 1.14 × 10-4 Cm, band gap are about 1.9 eV.
Method and core concept of the invention that the above embodiments are only used to help understand.It should be pointed out that for
For those skilled in the art, without departing from the principle of the present invention, if can also be carried out to the present invention
Dry improvement and modification, these improvement and modification also fall into the protection scope of the claims in the present invention.
Claims (5)
1. a kind of p-type copper sulfide transparent conducting film, it is characterised in that: the p-type copper sulfide transparent conducting film with a thickness of
40-60 nm, copper sulfide contained therein are p-type semiconductor material；In visible-range transmitance be 82-86%, square electricity
Resistance is 10-18 ohm, resistivity is (1.02-1.23) × 10-4 Cm, bandgap range are 1.5-2.0 eV.
2. a kind of preparation method of p-type copper sulfide transparent conducting film as described in claim 1, it is characterised in that operating procedure
It is as follows:
(1) copper precursor solution is prepared
By 0.5-10 mmol copper oxide (CuO) or cuprous oxide (Cu2O it) is put into 7-40 mL solvent, is heated to temperature 40-70
DEG C, 0.1-6 mL carbon disulfide and 1-10 mL aminated compounds are added while stirring, stirring to copper oxide (CuO) or oxidation are sub-
Copper (Cu2O it) is completely dissolved, obtains copper precursors reaction solution；Copper precursors reaction solution is centrifugated, clear copper precursors are obtained
Solution；
The solvent is dehydrated alcohol or chloroform or one of toluene or acetone；
The aminated compounds is n-butylamine or one of ethanol amine or ethylenediamine；
(2) p-type copper sulfide transparent conducting film is prepared
By copper precursor solution, wet processing forms a film on substrate plate, anneals 0.2-1 minutes under the conditions of 160-220 DEG C of temperature,
Obtain the p-type copper sulfide transparent conducting film with a thickness of 40-60 nm.
3. a kind of preparation method of p-type copper sulfide transparent conducting film as claimed in claim 2, it is characterised in that: step (1)
In, centrifugal condition: 8000-12000 revs/min of revolving speed, time 1-5 minute.
4. a kind of preparation method of p-type copper sulfide transparent conducting film as claimed in claim 2, it is characterised in that: step (2)
In, the material of the substrate plate is glass or plastics or ceramics or silicon wafer.
5. a kind of preparation method of p-type copper sulfide transparent conducting film as claimed in claim 2, it is characterised in that: step (2)
In, the wet processing is spray coating method or spin-coating method or lifting coating method or knife coating.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113019380A (en) * | 2021-02-26 | 2021-06-25 | 合肥工业大学 | CuO/Cu2Preparation method of O/ZnO heterojunction photoelectric catalytic material |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140778A (en) * | 1987-11-27 | 1989-06-01 | Sumitomo Electric Ind Ltd | Thin-film photovoltaic element |
| CN1949546A (en) * | 2006-11-10 | 2007-04-18 | 中国科学院上海硅酸盐研究所 | Method for preparing p type copper sulfide transparent conducting film |
| CN102439096A (en) * | 2009-05-21 | 2012-05-02 | 纳幕尔杜邦公司 | Processes for preparing copper tin sulfide and copper zinc tin sulfide films |
| CN102774871A (en) * | 2012-07-19 | 2012-11-14 | 北京理工大学 | P-type CuxSy semiconductor nanocrystalline, preparation method and application thereof |
| CN103613114A (en) * | 2013-11-21 | 2014-03-05 | 中国科学院上海硅酸盐研究所 | Liquid-phase preparation method of cuprous sulfide film |
| CN103938189A (en) * | 2014-04-30 | 2014-07-23 | 齐鲁工业大学 | Method for quickly and efficiently preparing copper sulphide nano film |
| CN104036964A (en) * | 2014-06-20 | 2014-09-10 | 北京大学 | Electrochemical preparation method for copper sulphide films |
| CN105702319A (en) * | 2016-04-28 | 2016-06-22 | 厦门大学 | Bending-resistant transparent copper sulfide conducting film and preparation method thereof |
-
2019
- 2019-03-29 CN CN201910249069.0A patent/CN109979645B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140778A (en) * | 1987-11-27 | 1989-06-01 | Sumitomo Electric Ind Ltd | Thin-film photovoltaic element |
| CN1949546A (en) * | 2006-11-10 | 2007-04-18 | 中国科学院上海硅酸盐研究所 | Method for preparing p type copper sulfide transparent conducting film |
| CN102439096A (en) * | 2009-05-21 | 2012-05-02 | 纳幕尔杜邦公司 | Processes for preparing copper tin sulfide and copper zinc tin sulfide films |
| CN102774871A (en) * | 2012-07-19 | 2012-11-14 | 北京理工大学 | P-type CuxSy semiconductor nanocrystalline, preparation method and application thereof |
| CN103613114A (en) * | 2013-11-21 | 2014-03-05 | 中国科学院上海硅酸盐研究所 | Liquid-phase preparation method of cuprous sulfide film |
| CN103938189A (en) * | 2014-04-30 | 2014-07-23 | 齐鲁工业大学 | Method for quickly and efficiently preparing copper sulphide nano film |
| CN104036964A (en) * | 2014-06-20 | 2014-09-10 | 北京大学 | Electrochemical preparation method for copper sulphide films |
| CN105702319A (en) * | 2016-04-28 | 2016-06-22 | 厦门大学 | Bending-resistant transparent copper sulfide conducting film and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| GEORGE JOY: "Reactively evaporated copper sulphide films", 《中国知网》 * |
| 齐慧: "硫化铜分体和薄膜的制备工艺及性能研究", 《中国知网》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113019380A (en) * | 2021-02-26 | 2021-06-25 | 合肥工业大学 | CuO/Cu2Preparation method of O/ZnO heterojunction photoelectric catalytic material |
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