JPH01140716A - Plasma doping - Google Patents
Plasma dopingInfo
- Publication number
- JPH01140716A JPH01140716A JP62299241A JP29924187A JPH01140716A JP H01140716 A JPH01140716 A JP H01140716A JP 62299241 A JP62299241 A JP 62299241A JP 29924187 A JP29924187 A JP 29924187A JP H01140716 A JPH01140716 A JP H01140716A
- Authority
- JP
- Japan
- Prior art keywords
- treated
- discharge
- temperature
- surface temperature
- intermittent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 101100406879 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) par-2 gene Proteins 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、半導体装置の製造プロセスなどにおいて、不
純物層を形成するためのプラズマドーピング方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a plasma doping method for forming an impurity layer in a semiconductor device manufacturing process.
従来の技術
従来、不純物層を形成する方法の一つとして、プラズマ
を利用するドーピング方法がある。これは、被処理物が
配置された容器内に、不純物を含んだ物質を導入し、こ
の容器内に放電を行い、この放電によって生ずる不純物
のイオンを、被処理物の表面に導入して、不純物層を形
成するものである。2. Description of the Related Art Conventionally, one of the methods for forming an impurity layer is a doping method using plasma. In this method, a substance containing impurities is introduced into a container in which the object to be treated is placed, a discharge is generated in the container, and impurity ions generated by this discharge are introduced onto the surface of the object to be treated. This forms an impurity layer.
発明が解決しようとする問題点
しかし、上記の構成によれば、通常安定した放電が得ら
れる真空域たとえば５ ｘ １Ｏ−２ｔｏｒｒ〜５ｔｏ
ｒｒでは、被処理物表面の温度が上昇し、フォトレジス
トが使用できず、被処理物のＳ＋衣表面Ｂ膜が形成され
やすく低濃度のドーピング制御が困難であり、問題点で
あった。Problems to be Solved by the Invention However, according to the above configuration, the vacuum region where stable discharge can normally be obtained, for example, 5 x 1 O-2 torr to 5 torr.
In rr, the temperature of the surface of the object to be processed increases, making it impossible to use a photoresist, and the S+B film on the surface of the object to be processed tends to form, making it difficult to control doping at a low concentration, which is a problem.
本発明は上記問題点を解決するもので、被処理物の表面
に、深さ方向の濃度が異なるものであっても、不純物を
均一に粘度よく導入することができるプラズマドーピン
グ方法を提供することを目的とする。The present invention solves the above problems, and provides a plasma doping method that can uniformly introduce impurities into the surface of a workpiece with good viscosity even if the concentration in the depth direction differs. With the goal.
問題点を解決するための手段
上記問題点を解決するために、本発明は、内部に被処理
物が配置された真空チャンバー内に、不純物が含有され
た気体を導入し、前記被処理物に対する高周波放電を間
欠的に反復して行うことにより、被処理物の温度を所定
温度に維持しながら被処理物の表面に不純物層を形成す
る構成としたものである。Means for Solving the Problems In order to solve the above-mentioned problems, the present invention introduces a gas containing impurities into a vacuum chamber in which a workpiece is placed, and The structure is such that an impurity layer is formed on the surface of the workpiece while maintaining the temperature of the workpiece at a predetermined temperature by repeatedly performing high-frequency discharge intermittently.
作用
上記構成により、間欠的に高周波放電を行なって被処理
物の表面における温度１袢を抑制し、−度に行う放電時
間と間欠時間とを適宜に設定することにより、被処理物
の表面温度を任意に温度に変化させて、被処理物の表面
に導入される不純物の深さ方向に対する濃度プロファイ
ルを変化させることができる。Effect With the above configuration, high-frequency discharge is performed intermittently to suppress the temperature at the surface of the object to be treated, and by appropriately setting the discharge time and the intermittent time to be performed at -degrees, the surface temperature of the object to be treated can be reduced. By changing the temperature arbitrarily, it is possible to change the concentration profile of impurities introduced into the surface of the object in the depth direction.
実施例
以下、本発明の一実施例を図面に基づいて説明する。第
１図において、真空チャンバー１には、ガス導入口２が
開口されており、真空チャンバー１の内部には電極３が
配置されている。この電極３の上には被処理物４として
６インチの８１基板が載置されており、電極３には高周
波電源５が接続されている。この高周波電源５はｔ３．
５６ＭＨｚの高周波を発生させるものであり、また６は
陰極降下電圧測定用の電圧計である。EXAMPLE Hereinafter, an example of the present invention will be described based on the drawings. In FIG. 1, a gas inlet 2 is opened in a vacuum chamber 1, and an electrode 3 is arranged inside the vacuum chamber 1. A 6-inch 81 substrate is placed on the electrode 3 as the object 4 to be processed, and a high frequency power source 5 is connected to the electrode 3. This high frequency power source 5 is activated at t3.
It generates a high frequency of 56 MHz, and 6 is a voltmeter for measuring cathode drop voltage.
上記の構成によれば、被処理物４にドーピングするため
の不純物を含む気体として８２ Ｈａ（日６ベース５％
）を使用し、この気体を真空チャンバー１の内部にガス
導入口２より１０ｓｅｃＩｌ導入する状態で、真空チャ
ンバー１の中を２Ｘ１０−３ｔｏｒｒの真空に保ち、電
圧計６の値が−７００Ｖとなる電圧のもとに、高周波電
源５より供給される高周波を間欠的に電極３から放電す
る。そして、−度に行う放電時間と間欠時間とを適宜の
値に設定し、被処理物４の表面温度を１２０℃に維持す
る。According to the above configuration, 82 Ha (day 6 base 5%
), this gas is introduced into the vacuum chamber 1 from the gas inlet 2 for 10 seconds, the inside of the vacuum chamber 1 is maintained at a vacuum of 2X10-3 torr, and the voltage is set such that the value of the voltmeter 6 is -700V. Under this condition, high frequency waves supplied from a high frequency power source 5 are intermittently discharged from the electrode 3. Then, the discharge time and the intermittent time to be performed at -degrees are set to appropriate values, and the surface temperature of the object to be treated 4 is maintained at 120 degrees Celsius.
そして、のべ放電時間が１００秒となるように高周波放
電を行う。第２図のａは上記したドーピングにより得ら
れた不純物層のＳＩＭＳ分析結果であり、表面付近でボ
ロン濃度が約１Ｘ １０２１ ｃｔｎ−’存在している
ことがわかる。そして同様にして、被処理物４の表面温
度を１００℃に維持し、のべ放電時間を１００秒とする
と第２図のｂに示すような結果となる。また同様にして
、被処理物４の表面温度が８０℃に維持し、のべ放電時
間を１００秒とすると第２図のＣに示すような結果とな
る。Then, high frequency discharge is performed so that the total discharge time is 100 seconds. FIG. 2a shows the result of SIMS analysis of the impurity layer obtained by the above-described doping, and it can be seen that the boron concentration is about 1×10 21 ctn-' near the surface. Similarly, if the surface temperature of the object 4 to be treated is maintained at 100 DEG C. and the total discharge time is set to 100 seconds, the result shown in FIG. 2b will be obtained. Similarly, if the surface temperature of the object 4 to be treated is maintained at 80 DEG C. and the total discharge time is set to 100 seconds, the result shown in FIG. 2C is obtained.
このように、高周波電源５による間欠的な放電を行い、
−度に行う放電時間と間欠時間とを制御して、被処理物
４の表面温度を任意の温度に維持することにより、不純
物の濃度プロファイルを調節することができる。このこ
とにより、被処理物４の表面に均一な不純物層を形成す
ることができる。In this way, intermittent discharge is performed by the high frequency power source 5,
The impurity concentration profile can be adjusted by controlling the discharge time and the intermittent time to maintain the surface temperature of the object 4 at a desired temperature. Thereby, a uniform impurity layer can be formed on the surface of the object 4 to be processed.
なお、この実施例においては、被処理物４はＳｌ基板と
したが、ドーピングするときのマスク材料にフォトレジ
ストを使用しても問題はない。In this embodiment, the object to be processed 4 is an Sl substrate, but there is no problem even if a photoresist is used as a mask material for doping.
光明の効果
以上述べたように、本発明によれば、高周波放電を間欠
的に行うことにより、被処理物の表面温度を一定に維持
し、−度に行う放電時間および間欠時間を制御すること
によって被処理物の表面温度を、任意のものとすること
ができ、このことによって、被処理物の表面に形成され
る不純物層の深さ方向における濃度プロファイルを調節
して、均一な不純物層を形成することができる。Effect of light As described above, according to the present invention, by performing high-frequency discharge intermittently, the surface temperature of the object to be treated can be maintained constant, and the discharge time and intermittent time to be performed at -degrees can be controlled. By this, the surface temperature of the object to be treated can be set to an arbitrary value, and by this, the concentration profile in the depth direction of the impurity layer formed on the surface of the object to be treated can be adjusted to form a uniform impurity layer. can be formed.
第１図は本発明の一実施例のプラズマドーピング装置の
断面図、第２図は被処理物表面付近のＳＩＭＳ分析結果
を示す図である。
１・・・真空チャンバー、２・・・ガス導入口、３・・
・電極、４・・・被処理物、５・・・高周波電源。
代理人 森 本 義 弘
第１図
１・−Ｌ諷千イ・パー
２・・・力゛ス岑入口
第２図
理ごFIG. 1 is a sectional view of a plasma doping apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the results of SIMS analysis near the surface of a workpiece. 1... Vacuum chamber, 2... Gas inlet, 3...
- Electrode, 4... Workpiece, 5... High frequency power source. Agent Yoshihiro Morimoto Figure 1 Figure 1 - L Licensing Par 2... Power Station Entrance Figure 2
Claims (1)
不純物が含有された気体を導入し、前記被処理物に対す
る高周波放電を間欠的に反復して行うことにより、被処
理物の温度を所定温度に維持しながら被処理物の表面に
不純物層を形成するプラズマドーピング方法。1. In a vacuum chamber in which the object to be processed is placed,
By introducing a gas containing impurities and intermittently repeating high-frequency discharge on the object, an impurity layer is formed on the surface of the object while maintaining the temperature of the object at a predetermined temperature. plasma doping method.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299241A JP2525018B2 (en) | 1987-11-27 | 1987-11-27 | Plasma doping method |
| KR1019880009791A KR930003857B1 (en) | 1987-08-05 | 1988-08-01 | Plasma doping method |
| US07/228,216 US4937205A (en) | 1987-08-05 | 1988-08-04 | Plasma doping process and apparatus therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62299241A JP2525018B2 (en) | 1987-11-27 | 1987-11-27 | Plasma doping method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01140716A true JPH01140716A (en) | 1989-06-01 |
| JP2525018B2 JP2525018B2 (en) | 1996-08-14 |
Family
ID=17869976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62299241A Expired - Lifetime JP2525018B2 (en) | 1987-08-05 | 1987-11-27 | Plasma doping method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2525018B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11284143A (en) * | 1998-02-27 | 1999-10-15 | Siemens Ag | Method for forming trench condenser |
-
1987
- 1987-11-27 JP JP62299241A patent/JP2525018B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11284143A (en) * | 1998-02-27 | 1999-10-15 | Siemens Ag | Method for forming trench condenser |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2525018B2 (en) | 1996-08-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR930003857B1 (en) | Plasma doping method | |
| JP3403781B2 (en) | Semiconductor manufacturing method and semiconductor manufacturing apparatus | |
| US6403453B1 (en) | Dose control technique for plasma doping in ultra-shallow junction formations | |
| TWI390610B (en) | Plasma doping method | |
| JP2748886B2 (en) | Plasma processing equipment | |
| US20060099830A1 (en) | Plasma implantation using halogenated dopant species to limit deposition of surface layers | |
| JP2004179592A (en) | Method for plasma doping and device manufactured using the same | |
| JPS61136229A (en) | Dry etching device | |
| WO2008059827A1 (en) | Plasma doping method | |
| US5883016A (en) | Apparatus and method for hydrogenating polysilicon thin film transistors by plasma immersion ion implantation | |
| US3953243A (en) | Method for setting the lifetime of charge carriers in semiconductor bodies | |
| JPH04352157A (en) | Method for removing resist | |
| JPH01140716A (en) | Plasma doping | |
| JPH0245714B2 (en) | ARUMINIUMUNOETSUCHINGUHOHOOYOBIETSUCHINGUYOGASUKONGOBUTSU | |
| EP1525333A2 (en) | Method and apparatus for plasma implantation without deposition of a layer of byproduct | |
| JPS56138921A (en) | Method of formation for impurity introduction layer | |
| JPH0335825B2 (en) | ||
| JPH0437129A (en) | Etching and device thereof | |
| JPH02166283A (en) | Formation of insulating film | |
| JPH0645896B2 (en) | Low temperature plasma processing equipment | |
| JP2001144088A (en) | Method of manufacturing semiconductor | |
| JPH03228321A (en) | Plasma cvd device | |
| JPS5943880A (en) | Dry etching device | |
| JPH03248419A (en) | Semiconductor production device | |
| JPS6298728A (en) | Dryetching device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term | ||
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080531 Year of fee payment: 12 |