JPH01139630U - - Google Patents
Info
- Publication number
- JPH01139630U JPH01139630U JP3653588U JP3653588U JPH01139630U JP H01139630 U JPH01139630 U JP H01139630U JP 3653588 U JP3653588 U JP 3653588U JP 3653588 U JP3653588 U JP 3653588U JP H01139630 U JPH01139630 U JP H01139630U
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- fet
- signal input
- high voltage
- mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 2
Landscapes
- Logic Circuits (AREA)
- Electronic Switches (AREA)
Description
第１図は本考案の信号入力回路を示す回路図、
第２図は従来の信号入力回路を示す回路図である
。
１…入力ポート、２…Ｐ―ＭＯＳ、７…第１の
反転回路、１２…第２の反転回路、１６…定電圧
回路、２３…検出回路。
FIG. 1 is a circuit diagram showing the signal input circuit of the present invention,
FIG. 2 is a circuit diagram showing a conventional signal input circuit. DESCRIPTION OF SYMBOLS 1... Input port, 2... P-MOS, 7... First inversion circuit, 12... Second inversion circuit, 16... Constant voltage circuit, 23... Detection circuit.
Claims (1)
前記入力ポートに入力した信号を前記高耐圧ＭＯ
Ｓ―ＦＥＴを介して反転する反転回路とを設けた
信号入力回路において、前記反転回路を異なるス
レツシヨルド電位に設定する反転補助回路と、定
電圧を前記高耐圧ＭＯＳ―ＦＥＴのゲートに印加
し、前記高耐圧ＭＯＳ―ＦＥＴを異なる入力電圧
レベルに設定する定電圧回路と、前記定電圧を前
記高耐圧ＭＯＳ―ＦＥＴのゲートに印加したこと
を検出し、前記入力ポートに入力した信号を前記
高耐圧ＭＯＳ―ＦＥＴを介して前記反転回路及び
前記反転補助回路によつて反転させる検出回路と
を設けたことを特徴とする信号入力回路。 (2) 前記定電圧回路は、所定電圧を分圧する分
圧抵抗より成ることを特徴とする請求項(1)記載
の信号入力回路。 (3) 前記検出回路は、複数のＭＯＳ―ＦＥＴよ
り成ることを特徴とする請求項(1)記載の信号入
力回路。[Scope of claims for utility model registration] (1) An input port, a high voltage MOS-FET,
The signal input to the input port is connected to the high voltage MO
In a signal input circuit provided with an inversion circuit that performs inversion via an S-FET, an inversion auxiliary circuit that sets the inversion circuit to a different threshold potential, and a constant voltage applied to the gate of the high voltage MOS-FET, a constant voltage circuit that sets high voltage MOS-FETs to different input voltage levels; and a constant voltage circuit that detects that the constant voltage is applied to the gate of the high voltage MOS-FET, and transmits a signal input to the input port to the high voltage MOS-FET. - A signal input circuit characterized in that it is provided with a detection circuit which is inverted by the inverting circuit and the inverting auxiliary circuit via a FET. (2) The signal input circuit according to claim 1, wherein the constant voltage circuit comprises a voltage dividing resistor that divides a predetermined voltage. (3) The signal input circuit according to claim (1), wherein the detection circuit includes a plurality of MOS-FETs.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3653588U JPH0625062Y2 (en) | 1988-03-18 | 1988-03-18 | Signal input circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3653588U JPH0625062Y2 (en) | 1988-03-18 | 1988-03-18 | Signal input circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01139630U true JPH01139630U (en) | 1989-09-25 |
| JPH0625062Y2 JPH0625062Y2 (en) | 1994-06-29 |
Family
ID=31263133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3653588U Expired - Lifetime JPH0625062Y2 (en) | 1988-03-18 | 1988-03-18 | Signal input circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0625062Y2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03152797A (en) * | 1989-11-08 | 1991-06-28 | Toshiba Corp | Semiconductor integrated circuit |
-
1988
- 1988-03-18 JP JP3653588U patent/JPH0625062Y2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03152797A (en) * | 1989-11-08 | 1991-06-28 | Toshiba Corp | Semiconductor integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0625062Y2 (en) | 1994-06-29 |