JPH01137814A - Oscillation circuit - Google Patents

Oscillation circuit

Info

Publication number
JPH01137814A
JPH01137814A JP62298251A JP29825187A JPH01137814A JP H01137814 A JPH01137814 A JP H01137814A JP 62298251 A JP62298251 A JP 62298251A JP 29825187 A JP29825187 A JP 29825187A JP H01137814 A JPH01137814 A JP H01137814A
Authority
JP
Japan
Prior art keywords
output
potential
channel
reference potential
inverter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62298251A
Other languages
Japanese (ja)
Inventor
Takashi Morigami
森上 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62298251A priority Critical patent/JPH01137814A/en
Publication of JPH01137814A publication Critical patent/JPH01137814A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To decrease a through-current between power supplies flowing at switching by employing a P-channel transistor(TR) and an N-channel TR for a part connecting to an output of a comparator. CONSTITUTION:Each gate of the P-channel TR 6 and the N-channel TR 7 is connected to an output of a high potential comparator 4 and an output of a low potential comparator 5. Since the output of the inverter comprising the P-channel TR 6 and the N-channel TR 7 changes from a low level (or high level) to a high level (or low level) via a high impedance state where both the P-channel TR 6 and the N-channel TR 7 are turned off, even when the inverter 8 driven by the output employs CMOS structure, both the P-channel and the N-channel TRs connected in series between power supplies are not turned on. Thus, no large through-current is caused in the inverter 8. Furthermore, since the output change in the inverter 8 is steep, no through-current is caused in an inverter 10.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、発振回路に関する。[Detailed description of the invention] [Industrial application field] The present invention relates to an oscillation circuit.

〔従来の技術〕[Conventional technology]

従来、この種の発振回路は、第3図に示す回路が一般的
であった。リファレンス抵抗1〜3で形成される基L(
fi雷電圧受ける高電位側コンパレータ4の出力信号と
低電位側コンパレータ5の出力信号の組合せにより負帰
還がかかる様2つのコンパレータ・1.5に共通に入る
信号を制御するために、従来第3図に示す様にインバー
タ18を含むNANDゲート16.17から成るR−S
フリップフロップを用いてインバータ10を介して出力
端子14に出力するとともに、Nチャンネルトランジス
タ11を駆動して充電用抵抗12によって充電される充
放電用コンデンサ13の放電を制御していた。
Conventionally, this type of oscillation circuit has generally been the circuit shown in FIG. Group L formed by reference resistors 1 to 3 (
Conventionally, in order to control the signal commonly input to the two comparators 1.5 so that negative feedback is applied by the combination of the output signal of the high potential side comparator 4 receiving the fi lightning voltage and the output signal of the low potential side comparator 5, the third R-S consists of NAND gates 16 and 17 including inverter 18 as shown in the figure.
While outputting to the output terminal 14 via the inverter 10 using a flip-flop, the N-channel transistor 11 was driven to control discharging of the charging/discharging capacitor 13 charged by the charging resistor 12.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述した従来の発振回路では、第4図に示すA点及びB
点において、第3図のインバータ18と2人力NAND
ゲート16.17は0MO3構成で作られているので、
これらにスイッチング時の電源間貫通電流が流れるとい
う欠点がある。また、この貫通電流を押えるために2つ
のコンパレータ4,5のドライブ能力を高くシ、スイッ
チング時間を短かくすると、今度はコンパレータ4.5
内部に流れる電流が大きくなるという欠点がある。
In the conventional oscillation circuit described above, points A and B shown in FIG.
At the point, the inverter 18 in Fig. 3 and the two-man NAND
Since gates 16 and 17 are made with 0MO3 configuration,
These have the disadvantage that a through current flows between the power supplies during switching. In addition, in order to suppress this through current, if the drive capacity of the two comparators 4 and 5 is increased and the switching time is shortened, then the comparators 4 and 5
The disadvantage is that the current flowing inside increases.

〔問題点を解決するための手段〕[Means for solving problems]

本発明によれば、第1の基準電位を発生する第■の基準
電位発生手段と、該第1の基準電位より低い第2の基準
電位を発生する第2の基準電位発生手段と、固定電位間
に接続された出力手段を有し、前記第1の基準電位及び
前記第2の基準電位と制御電位とを比較し、前記制御電
位が前記第1の基準電位より高いときには前記出力手段
に設けられた出力側接続点に第1の出力信号を出し、前
記制御電位が前記第1の基準電位より低く前記第2の基
準電位より高いときは、前記出力手段の前記固定電位間
あるいは前記固定電位と前記出力側接続点との間に電流
を流すことなく前記出力側接続点をハイインピーダンス
の状態とし、前記制御電位が前記第2の基準電位より低
いときは、前記出力側接続点に第2の出力信号を出す比
較手段と、前記出力側接続点に接続されたラッチ手段と
、該ラッチ手段の出力に応じて所定の信号を出力する出
力端子と、前記ラッチ回路から出力される前記第1の出
力信号に応じて前記制御信号を前記第2の基準より低い
値とし、前記ラッチ回路から出力される前記第2の出力
信号に応じて前記制御信号を前記第1の基準電位より高
い値とする制御手段とを有する発振回路が得られる。
According to the present invention, the second reference potential generating means generates the first reference potential, the second reference potential generating means generates the second reference potential lower than the first reference potential, and the fixed potential an output means connected between the output means, which compares the first reference potential and the second reference potential with a control potential, and when the control potential is higher than the first reference potential, the output means is provided with a control potential; A first output signal is output to the output side connection point of the output means, and when the control potential is lower than the first reference potential and higher than the second reference potential, the control potential is between the fixed potentials of the output means or the fixed potential. and the output side connection point, and the output side connection point is in a high impedance state, and when the control potential is lower than the second reference potential, a second voltage is applied to the output side connection point. a comparison means for outputting an output signal, a latch means connected to the output side connection point, an output terminal for outputting a predetermined signal in accordance with the output of the latch means, and a first output signal output from the latch circuit. The control signal is set to a value lower than the second reference potential in response to an output signal of the latch circuit, and the control signal is set to a value higher than the first reference potential in response to the second output signal output from the latch circuit. An oscillation circuit having a control means is obtained.

〔実旅例〕[Actual travel example]

次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.

第1図は本発明の一実施例の回路図である。FIG. 1 is a circuit diagram of an embodiment of the present invention.

1〜3はリファレンス抵抗で第4図のRA、R11の基
準電位を作る。4及び5はコンパレータでV。
Reference resistors 1 to 3 create a reference potential for RA and R11 in FIG. 4. 4 and 5 are comparators with V.

の電位とRA又はRBの電位を比較し判定する。6はP
ch )ランジスタ、7はNchトランジスタで、それ
ぞれのゲートは高電位側コンパレータ4及び低電位側コ
ンパレータ5の出力にそれぞれつながっている。8〜1
0はインバータ回路で、インバータ回路9はインバータ
回路8の入出力間で帰還してデータラッチ回路を構成す
る。11はNチャンネルトランジスタで、インバータ回
路1゜の出力によりスイッチング動作(オン・オフ動作
)を行なう。12と13はそれぞれ充電用抵抗と、充放
電用コンデンサでNチャンネルトランジスタ11のオン
・オフ動作により充放電を行ないvcの電位を変化させ
る。
The determination is made by comparing the potential of RA or RB with the potential of RA or RB. 6 is P
7 is an Nch transistor, the gates of which are connected to the outputs of the high-potential side comparator 4 and the low-potential side comparator 5, respectively. 8-1
0 is an inverter circuit, and the inverter circuit 9 is fed back between the input and output of the inverter circuit 8 to form a data latch circuit. Reference numeral 11 denotes an N-channel transistor, which performs switching operation (on/off operation) based on the output of the inverter circuit 1°. Reference numerals 12 and 13 are a charging resistor and a charging/discharging capacitor, respectively, which are charged and discharged by the on/off operation of the N-channel transistor 11 to change the potential of vc.

第4図のC領域からd領域に至る過程を各部の動作を追
って説明する。C領域では、高電位側コンパレータ4、
低電位側コンパレータ5はともに[ハイ(High)J
の出力のためPチャンネルトランジスタ6はオフ状態で
Nチャンネルトランジスタ7はオン状態となり、■1の
電位は[ロー(L o w)J、出力端子14の電位v
2も「ロー」となる。従って、Nチャンネルトランジス
タ11はオフ状態となりV。の電位は充電抵抗12及び
充放電用コンデンサI3にて決定される時定数で上昇す
る。次にb領域では高電位側コンパレータ4は「ハイ」
、低電位側コンパレータ6は「ロー」の出力のためPチ
ャンネルトランジスタ6、Nチャンネルトランジスタ7
はともにオフ状態となるが、インバータ9を用いたラッ
チ回路がvlに接続されているためv1電位は「ロー」
のままであり出力端子14の電位v2も[ローJのまま
である。
The process from area C to area d in FIG. 4 will be explained following the operation of each part. In the C region, the high potential side comparator 4,
The low potential side comparators 5 are both [High
Due to the output of
2 is also "low". Therefore, the N-channel transistor 11 is in an off state and the voltage is V. The potential increases with a time constant determined by the charging resistor 12 and the charging/discharging capacitor I3. Next, in region b, the high potential side comparator 4 is “high”
, since the low potential side comparator 6 outputs "low", the P channel transistor 6 and the N channel transistor 7
Both are in the off state, but since the latch circuit using inverter 9 is connected to vl, the v1 potential is "low"
The potential v2 of the output terminal 14 also remains at low J.

C領域では高電位側コンパレータ4の出力が「ロー」に
変わるため、Pチャンネルトランジスタ6がオンし、v
1電位が「ハイ」へと上昇し出力端子14の電位v2も
「ハイ」となるためNチャンネルトランジスタ11がオ
ン状態となりV。電位がGND側へ引き寄せられる。更
に、d領域ではb領域と同じ動きを行ないPチャンネル
トランジスタ6、Nチャンネルトランジスタ7とともに
オフ状態となるがインバータ9を用いたラッチ回j■1
に接続されているためにvl及びV2の電位は「ハイ」
のままでありNチャンネルトランジスタ11がオンしつ
づけ、再びa領域へとなり、上述のサイクルをくり返し
発振を行なう。このように、Pチャネルトランジスタ6
、Nチャンネルトランジスタ7は遷移状態において共に
オフとなるので貫通電流が流れるのを防ぐことができる
In the C region, the output of the high potential side comparator 4 changes to "low", so the P channel transistor 6 is turned on, and V
1 potential rises to "high" and the potential v2 of the output terminal 14 also becomes "high", so the N-channel transistor 11 is turned on and the potential V2 rises to "high". The potential is drawn toward the GND side. Furthermore, in the d region, the same operation as in the b region is performed and the P channel transistor 6 and the N channel transistor 7 are turned off, but the latch circuit j■1 using the inverter 9
The potentials of vl and V2 are “high” because they are connected to
As it is, the N-channel transistor 11 continues to be turned on, and the state returns to region a, and the above-mentioned cycle is repeated to perform oscillation. In this way, P channel transistor 6
, N-channel transistor 7 are both turned off in the transition state, so that a through current can be prevented from flowing.

このように、Pチャンネルトランジスタ6とNチャンネ
ルトランジスタ7とで構成されるインバータは出力が低
レベル(もしくは高レベル)から両トランジスタ6.7
共にオフ状態である高インピーダンス状態を経て高レベ
ル(もしくは低レベル)に変化するので、その出力で駆
動されるインバータ8はCMO8tj造であっても電源
間に直列に接続されるPチャンネルおよびNチャンネル
の両トランジスタが共にオンすることはない。
In this way, the inverter composed of the P-channel transistor 6 and the N-channel transistor 7 changes the output from the low level (or high level) to both transistors 6.7.
Both change to a high level (or low level) through a high impedance state in which they are off, so even if the inverter 8 driven by the output is a CMO8TJ structure, it is a P channel and an N channel that are connected in series between the power supplies. Both transistors never turn on.

従って、インバータ8に大きな貫通電流が生じることは
ない。インバータ8の出力変化が急峻であるのでインバ
ータ10にも貫通電流が生じること前述した一実施例で
用いたインバータ回路8に代え、シュミット回路15で
構成する。この実施例では、シュミット回路15を使用
することによりPチャンネルトランジスタ6やNチャン
ネルトランジスタ7が立上り、立下りの遅い場合では、
安定した発振動作を行なう、一方、貫通電流は更に一層
少なくなる利点がある。
Therefore, a large through current does not occur in the inverter 8. Since the output change of the inverter 8 is steep, a through current also occurs in the inverter 10.A Schmitt circuit 15 is used in place of the inverter circuit 8 used in the embodiment described above. In this embodiment, by using the Schmitt circuit 15, the P-channel transistor 6 and the N-channel transistor 7 rise, and when the fall is slow,
It has the advantage that stable oscillation operation is performed, while the through current is further reduced.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、フンパレータの出力と接
続される部分にPチャネルトランジスタとNチャンネル
トランジスタを用いることにより、スイッチング時に流
れる電源間貫通電流を極力小さく出来るという効果があ
る。
As described above, the present invention has the advantage that by using a P-channel transistor and an N-channel transistor in the portion connected to the output of the humparator, the power supply through-current flowing during switching can be minimized.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例の回路図、第2図は本発明の
他の実施例の回路図、第3図は従来の回路図、第4図は
V。の電位波形図である。 1〜3・・・・・・リファレンス抵抗、4・・・・・・
高電位側コンパレータ、5・・・・・・低電位側フンパ
レータ、6・・・・・・Pチャンネルトランジスタ、7
・・・・・・Nチャンネルトランジスタ、8〜10・・
・・・・インバータ回路、11・・・・・・Nチャンネ
ルトランジスタ、12・・・・・・充電用抵抗、13・
・・・・・充放電用コンデンサ、14・・・・・・出力
端子、15・・・・・・シュミット回路、16.17・
・・・・・2人力NANDゲート、18・・・・・・イ
ンバータ回路。 代理人 弁理士  内 原   晋 VDD          Vl)D 4−一一高電イ立伸Iコシパl、−2 5・−−イ氏1(イ亡イqリ コ レバし一タ3〜10
−−− イシハー タロ賂 71−N+マネルトラユン7.り /Z  −−ヌミ1仁1H4氏すた l3−−一充鋏電」コンテシブ 14−  出力錦予 j〜3−−−ソファしシス瓢4次 4、−高置イ立イ巨11コシバレタ 5.2イ氏電&准りコシハルータ ヲ、−1o、−イレバータC75& yy−Nチャネルトランジスタ 12− 充電用ボ杭 13−  充放電、用コンデンサ 14−  出力端子 f5− シュξ、トロ落 1〜3−・−リファbzス爪杭 411.高電佐預すコシバレータ 71−tq−5−欠オ/I/UランシズタIZ−−−充
電用J氏才丸 13−充放電用コンデンサ 14−出力端子 f乙、/’7−2人力NANDゲ゛−ト18・−インハ
゛−タロヱ各
FIG. 1 is a circuit diagram of one embodiment of the present invention, FIG. 2 is a circuit diagram of another embodiment of the present invention, FIG. 3 is a conventional circuit diagram, and FIG. 4 is a V. FIG. 1 to 3...Reference resistance, 4...
High potential side comparator, 5...Low potential side comparator, 6...P channel transistor, 7
...N-channel transistor, 8 to 10...
... Inverter circuit, 11 ... N-channel transistor, 12 ... Charging resistor, 13.
...Charge/discharge capacitor, 14...Output terminal, 15...Schmitt circuit, 16.17.
...Two-man power NAND gate, 18...Inverter circuit. Agent Patent Attorney Susumu Uchihara VDD VDD 4-11 Takaden I Tachishin I Koshipa I, -2 5.
--- Ishihar Taro bribe 71-N + Manertrayun 7. Ri/Z -- Numi 1 Jin 1 H4 Mr. Sta 13 -- One charge scissor electric 14- Output nishikiyo j ~ 3 --- Sofa and Sis Gourd 4th 4, - Takaoki I Stand Ai Giant 11 Koshibareta 5 .2 Mr. Den & Associate Koshiharu Tawo, -1o, -Elevator C75 & yy-N channel transistor 12- Charging capacitor 13- Charging/discharging capacitor 14- Output terminal f5- Shu ξ, Toro drop 1 to 3-. -Reference bz nail pile 411. Takadensa's Koshibarator 71-tq-5-Missing O/I/U Runshizuta IZ--Charging J Saimaru 13-Charging and discharging capacitor 14-Output terminal f, /'7-2 Manual NAND game Each part 18 and in part 18

Claims (1)

【特許請求の範囲】[Claims] 第1の基準電位を発生する第1の基準電位発生手段と、
該第1の基準電位より低い第2の基準電位を発生する第
2の基準電位発生手段と、固定電位間に接続された出力
手段を有し、前記第1の基準電位及び前記第2の基準電
位と制御電位とを比較し、前記制御電位が前記第1の基
準電位より高いときには前記出力手段に設けられた出力
側接続点に第1の出力信号を出し、前記制御電位が前記
第1の基準電位より低く前記第2の基準電位より高いと
きは、前記出力手段の前記固定電位間あるいは前記固定
電位と前記出力側接続点との間に電流を流すことなく前
記出力側接続点をハイインピーダンスの状態とし、前記
制御電位が前記第2の基準電位より低いときは、前記出
力側接続点に第2の出力信号を出す比較手段と、前記出
力側接続点に接続されたラッチ手段と、該ラッチ手段に
応じて所定の信号を出力する出力端子と、前記ラッチ回
路から出力される前記第1の出力信号に応じて前記制御
信号を前記第2の基準より低い値とし、前記ラッチ回路
から出力される前記第2の出力信号に応じて前記制御信
号を前記第1の基準電位より高い値とする制御手段とを
有することを特徴とする発振回路。
a first reference potential generating means for generating a first reference potential;
a second reference potential generating means for generating a second reference potential lower than the first reference potential; and an output means connected between the fixed potential, the first reference potential and the second reference potential being connected to each other. The potential and the control potential are compared, and when the control potential is higher than the first reference potential, a first output signal is output to an output side connection point provided in the output means, and the control potential is higher than the first reference potential. When the potential is lower than the reference potential and higher than the second reference potential, the output connection point is set to high impedance without flowing a current between the fixed potential of the output means or between the fixed potential and the output connection point. and when the control potential is lower than the second reference potential, a comparison means outputting a second output signal to the output connection point; a latch means connected to the output connection point; an output terminal that outputs a predetermined signal according to the latch means; and an output terminal that sets the control signal to a value lower than the second reference according to the first output signal output from the latch circuit, and outputs the control signal from the latch circuit. and control means for setting the control signal to a value higher than the first reference potential in accordance with the second output signal.
JP62298251A 1987-11-25 1987-11-25 Oscillation circuit Pending JPH01137814A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62298251A JPH01137814A (en) 1987-11-25 1987-11-25 Oscillation circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62298251A JPH01137814A (en) 1987-11-25 1987-11-25 Oscillation circuit

Publications (1)

Publication Number Publication Date
JPH01137814A true JPH01137814A (en) 1989-05-30

Family

ID=17857199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62298251A Pending JPH01137814A (en) 1987-11-25 1987-11-25 Oscillation circuit

Country Status (1)

Country Link
JP (1) JPH01137814A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160679A (en) * 1991-12-03 1993-06-25 Nec Corp Cr oscillation circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55140323A (en) * 1979-04-02 1980-11-01 Nat Semiconductor Corp Cmos schmitt trigger circuit including oscillator
JPS5830331B2 (en) * 1978-08-30 1983-06-28 インスチツ−ト ネフチエキミチエスコボ シンテ−ザ アカデミ− ナウク エスエスエスエル Crystalline polymer having alternating dimethylene units and methyl-substituted disylene units in the main chain and method for producing the same
JPS60241320A (en) * 1984-05-16 1985-11-30 Nec Corp Reset circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5830331B2 (en) * 1978-08-30 1983-06-28 インスチツ−ト ネフチエキミチエスコボ シンテ−ザ アカデミ− ナウク エスエスエスエル Crystalline polymer having alternating dimethylene units and methyl-substituted disylene units in the main chain and method for producing the same
JPS55140323A (en) * 1979-04-02 1980-11-01 Nat Semiconductor Corp Cmos schmitt trigger circuit including oscillator
JPS60241320A (en) * 1984-05-16 1985-11-30 Nec Corp Reset circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05160679A (en) * 1991-12-03 1993-06-25 Nec Corp Cr oscillation circuit

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