JPH01133971A - Production of superconducting material - Google Patents
Production of superconducting materialInfo
- Publication number
- JPH01133971A JPH01133971A JP63175021A JP17502188A JPH01133971A JP H01133971 A JPH01133971 A JP H01133971A JP 63175021 A JP63175021 A JP 63175021A JP 17502188 A JP17502188 A JP 17502188A JP H01133971 A JPH01133971 A JP H01133971A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting material
- superconductor
- oxygen plasma
- producing
- material according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000002887 superconductor Substances 0.000 claims abstract description 30
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 23
- 239000001301 oxygen Substances 0.000 claims abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000008188 pellet Substances 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000000137 annealing Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 239000010419 fine particle Substances 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 7
- 238000005513 bias potential Methods 0.000 claims description 5
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 2
- 239000011882 ultra-fine particle Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- Y02E40/642—
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は超伝導体の製造法に係り、特に、高温酸化物系
超伝導材料の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a superconductor, and particularly to a method for manufacturing a high-temperature oxide-based superconducting material.
従来の製造方法は、ジャパニーズ ジャーナルオブ ア
プライド フィズイクス、第２６巻、第５号（１９８７
年）第Ｌ６７６頁〜第Ｌ６７７頁（Ｊｐｎ、 Ｊ、 Ａ
ｐｐｌ、 Ｐｈｙｓ、、 ２６．５ （１９８７）ｐｐ
Ｌ６７６−Ｌ６７７）に記載されているように、例えば
、Ｙ−Ｂａ−Ｃｕ−０酸化物超伝導体の場合、Ｙ２Ｏ，
とＢａＣＯ３とＣｕＯの粉末を適当な比で混合し、９５
０℃で１時間大気中又は酸素ガス雰囲気中で仮焼成した
後、ペレット状等適当な形に整形し、９００℃で１８〜
１９時間程度大気中又は酸素雰囲気中で、第２図に示す
ように、電気炉９を用いて焼結させていた。なお、この
図で、１は超伝導材料１０（例えば、前記ペレット）に
焼結した高温超伝導体、２は基板を示す。The conventional manufacturing method is described in Japanese Journal of Applied Physics, Vol. 26, No. 5 (1987).
2013) Pages L676-L677 (Jpn, J, A
ppl, Phys, 26.5 (1987) pp
For example, in the case of Y-Ba-Cu-0 oxide superconductor, Y2O,
By mixing powders of BaCO3 and CuO in an appropriate ratio, 95
After pre-calcining at 0°C for 1 hour in the air or oxygen gas atmosphere, it is shaped into an appropriate shape such as a pellet, and heated at 900°C for 18 to 30 minutes.
Sintering was carried out for about 19 hours in the air or in an oxygen atmosphere using an electric furnace 9 as shown in FIG. In this figure, 1 indicates a high-temperature superconductor sintered into a superconducting material 10 (for example, the pellet), and 2 indicates a substrate.
［発明が解決しようとする課題〕
上記従来技術は、製作に長時期を有し、また不純物の混
入等について配慮されておらず、生産性や安定性などに
問題があった。[Problems to be Solved by the Invention] The above-mentioned conventional technology requires a long period of time to manufacture, does not take into consideration the possibility of contamination with impurities, and has problems with productivity, stability, etc.
本発明の目的は、上記問題点を解決するとともに、より
高温でより臨界電流密度の大きい超伝導材料の製造方法
を提供することにある。An object of the present invention is to solve the above-mentioned problems and to provide a method for manufacturing a superconducting material having a higher critical current density at a higher temperature.
上記目的を達成するために、超伝導体の作製工程に少な
くとも酸素プラズマを用いるようにしたダものである。In order to achieve the above object, at least oxygen plasma is used in the superconductor manufacturing process.
酸素プラズマでの処理（化学的ａｎｄ１０ｒ物理的反応
を用いた）は、酸化プラズマ中の活性な酸Ｃｕ−０超伝
電体において、酸素と銅が一次元的に配列し易くなり、
転移（又は臨界）温度は上昇し、さらに臨界電流密度も
増大し、安定した特性が短時間で得られる。Treatment with oxygen plasma (using chemical and 10r physical reactions) facilitates one-dimensional alignment of oxygen and copper in the active acid Cu-0 superconductor in the oxidizing plasma;
The transition (or critical) temperature increases, and the critical current density also increases, allowing stable characteristics to be obtained in a short time.
以下、本発明の一実施例を第１図および第３図により説
明する。An embodiment of the present invention will be described below with reference to FIGS. 1 and 3.
第１図は本発明に用いた実験装置の概ｗ８図を示す。石
英ガラス等から成る真空容器４は排気装置により高真空
（〜１０−＠Ｔｏｒｒ）に排気でき、その内部に超伝導
体１を形成する。または超伝導材料をセットする基板２
とこれらを加熱ａｎｄ１０ｒ冷却するための加熱ａｎｄ
１０ｒ冷却器３を設ける。−方、酸素プラズマの発生は
前記真空容器４内に酸素ガス単体、又は酸素ガスにフレ
オンガスやアルゴンガス等を混合したガスを導入すると
ともに、前記真空容器４の外側に設けた電力供給器５（
容量や誘導結合など）に高周波（マイクロ波含む）発生
器６から高周波（マイクロ波含む）電力（周波数：数１
０Ｈ２〜数１０ＧＨｚ、数１００Ｗ〜数１００ＭＷ）を
供給して行う。なお、発生したプラズマの閉じ込めや発
生を容易にするために、磁界発生器７を用いて外部磁界
を重畳するとよい（用いなくても可）。このときの磁界
の配位は発（支）
散型（第５屓参照）、ミラー型、カスプ型などいずれで
もよい。このときの磁界の強さ（磁界強度Ｂ）は、第５
図に示すように、電子サイクロトロン共鳴条件Ｂｃを満
たす（Ｂ＝Ｂｃ）か高周波（主にマイクロ波）のモード
によりＢ＜Ｂｃでもよい。FIG. 1 shows a schematic w8 diagram of the experimental apparatus used in the present invention. A vacuum container 4 made of quartz glass or the like can be evacuated to a high vacuum (~10-@Torr) by an evacuation device, and a superconductor 1 is formed therein. Or substrate 2 on which superconducting material is set
Heating and cooling these by 10r and
A 10r cooler 3 is provided. - On the other hand, to generate oxygen plasma, oxygen gas alone or a mixture of oxygen gas and Freon gas, argon gas, etc. is introduced into the vacuum container 4, and a power supply 5 (
high frequency (including microwave) power (frequency: number 1) from the high frequency (including microwave) generator 6 (capacitance, inductive coupling, etc.)
0H2 to several 10 GHz, several 100 W to several 100 MW). Note that in order to facilitate confinement and generation of the generated plasma, it is preferable to use the magnetic field generator 7 to superimpose an external magnetic field (it is not necessary to use it). The configuration of the magnetic field at this time may be of any type, such as an emitting (supporting) type (see Part 5), a mirror type, or a cusp type. The strength of the magnetic field at this time (magnetic field strength B) is the fifth
As shown in the figure, the electron cyclotron resonance condition Bc may be satisfied (B=Bc), or B<Bc may be satisfied depending on the high frequency (mainly microwave) mode.
超伝導素材１０の導入法は、超伝導体１を薄膜状に形成
する場合には、超伝導体１を構成する素材１０を粉末状
（超微粒子など含む）にして、前記真空容器４内に導入
する。一方、超伝導体１をペレット状などに形成すると
きは、前記超伝導材料１０をペレット状などに整形し、
前記基板２上にセットする。When forming the superconductor 1 into a thin film, the method for introducing the superconducting material 10 is to powder the material 10 constituting the superconductor 1 (including ultrafine particles, etc.) and place it in the vacuum container 4. Introduce. On the other hand, when forming the superconductor 1 into a pellet or the like, the superconductor material 10 is shaped into a pellet or the like,
Set on the substrate 2.
次に、上記装置の動作と超伝導体製造方法にっいて述べ
る。超伝導体１を薄膜状に形成する場合には、まず前記
真空容器１内を高真空に排気した後、前記基板１（前記
薄膜を形成する基板）を前記加熱ａｎｄ１０ｒ冷却器３
を用いて温調する（０〜１０００ ’Ｃ位）。Next, the operation of the above-mentioned apparatus and the superconductor manufacturing method will be described. When forming the superconductor 1 in the form of a thin film, first, the inside of the vacuum container 1 is evacuated to a high vacuum, and then the substrate 1 (the substrate on which the thin film is formed) is heated and heated in the 10R cooler 3.
Adjust the temperature using a (about 0 to 1000'C).
適当な大きさのバイアス電位（直流ａｎｄ１０ｒ交流（
高周波含む）の正ａｎｄ１０ｒ負）を印加する。次に、
前記酸素又は酸素＋フレオンなどの活性なガスを導入し
く １０”５〜１０’Ｔｏｒｒ） 、高温（１０〜１０
４ｅｖ程度）で高密度（１０” 〜１０”／ｃｃ程度）
のプラズマを発生し、ついで、超伝導素材１例えば、Ｙ
２Ｏ，とＢａＣ０，とＣｕＯの微粉末（重量混合比二〇
、６ ：１．５ ： １．０）を作製する超伝導体１の
化学量論的組成比が一致するように前記プラズマ中に入
射する。Bias potential of appropriate size (DC and 10r AC (
(including high frequency) and 10r negative) are applied. next,
Introduce active gas such as oxygen or oxygen + freon at high temperature (10 to 10 Torr) and high temperature (10 to 10 Torr).
(about 4ev) and high density (about 10” to 10”/cc)
A plasma is generated, and then superconducting material 1, for example, Y
2O, BaC0, and CuO fine powder (weight mixing ratio 20:6:1.5:1.0) was prepared in the plasma so that the stoichiometric composition ratio of the superconductor 1 matched. incident.
なお、前記超伝導素材１０の導入は、モレキュラビーム
エピタキシー技術で用いられているように、例えば、レ
ーザビームや電子ビームなどを用いて、第６図に示すよ
うに、前記超伝導体１を構成する個々の金属元素（例え
ば、上記例の場合、Ｙ、Ｂａ、Ｃｕ）を加熱蒸発させて
原子状（超微粒子含む）にし、化学量論的組成比が一致
するように個々を独立に制御するとよいが、特に限定す
るものではない。The superconducting material 10 is introduced by using, for example, a laser beam or an electron beam to introduce the superconductor 1 as shown in FIG. 6, as used in molecular beam epitaxy technology. The individual constituent metal elements (for example, Y, Ba, and Cu in the above example) are heated and evaporated into atomic forms (including ultrafine particles), and each element is independently controlled so that the stoichiometric composition ratio matches. It is good to do so, but there is no particular limitation.
このとき、前記プラズマ中の活性な酸素原子やフレオン
原子（ラジカルなど含む）およびこれらの荷電粒子と前
記超伝導素材を構成する原子との化学的ａｎｄ１０ｒ物
理的反応によりイオン結晶を成長させながら前記基板２
上にデポジットし、超伝導薄膜を形成する。所要の厚さ
の薄膜が得られたら、前記超伝導素材１０の入射を停止
し、前記プラズマａｎｄ１０ｒ前記加熱ａｎｄ１０ｒ冷
却器３を用いて酸化ａｎｄ１０ｒアニールするとより低
温、短時間超伝導材Ｙ−Ｂａ−Ｃｕ−０の抵抗率の温度
依存性を示す。従来の電気炉を用いた方法によって作製
した膜に比べ、本発明の方法による膜の方が、高温で、
しかも抵抗率の小さいことが解る。また安定性や臨界電
流密度も従来方法に比べ優れていた。At this time, the substrate is grown while ionic crystals are grown by chemical and 10r physical reactions between active oxygen atoms, freon atoms (including radicals, etc.) in the plasma, and these charged particles and atoms constituting the superconducting material. 2
to form a superconducting thin film. When a thin film of the required thickness is obtained, the injection of the superconducting material 10 is stopped, and oxidation and 10r annealing is performed using the plasma and 10r heating and 10r cooler 3 to form a lower temperature, short-time superconducting material Y-Ba- The temperature dependence of resistivity of Cu-0 is shown. Compared to the film produced by the conventional method using an electric furnace, the film produced by the method of the present invention can be produced at a higher temperature.
Moreover, it can be seen that the resistivity is small. Furthermore, stability and critical current density were also superior to conventional methods.
一方、ペレット状に作製するときは、例えば前記超伝導
素材１０をペレット状に整形した後、前記基板２上にセ
ットし、高真空に加熱（焼結しない温度で）排気した後
、前記プラズマ中で焼結させ（イオン結晶化）るととも
に酸化ａｎｄ１０ｒアニールして超伝導体１を作製する
。なお、このとき基板２のセットする位置は前記薄、膜
形成とは一般に異なる（積極的に前記プラズマ中にセッ
トする）。On the other hand, when producing pellets, for example, the superconducting material 10 is shaped into a pellet, set on the substrate 2, heated to a high vacuum (at a temperature that does not sinter), and then placed in the plasma. The superconductor 1 is produced by sintering (ionic crystallization) and oxidation and 10R annealing. Note that the position at which the substrate 2 is set at this time is generally different from that for forming a thin film (it is actively set in the plasma).
第４項（イ）〜（ハ）は別の実験装置の概略を示す。Sections 4 (a) to (c) outline another experimental device.
（イ）は超伝導素材１０を陰極として動作させ、陽極側
に所望の超伝導体１を作製するもので、電力として高周
波や直流またパルス電力を用いて酸素プラズマを発生し
、前記同様、少なくともこの酸素プラズマを用いること
を特徴とする。なお、この時、基板２は前記同様加熱ａ
ｎｄ１０ｒ冷却器３で追加熱等を行ってもよい。In (a), the superconducting material 10 is operated as a cathode, and the desired superconductor 1 is produced on the anode side. Oxygen plasma is generated using high frequency, direct current, or pulsed power as the electric power, and as in the above, at least It is characterized by using this oxygen plasma. Note that at this time, the substrate 2 is heated a as described above.
Additional heat may be provided by the nd10r cooler 3.
（ロ）は前記第１図において、高周波電力としてマイク
ロ波電力（ＩＧ Ｈｚ以上、１０Ｗ〜１０２第１図の実
施例と同じであるが、プラズマの発生方法によりプラズ
マの物理量（温度や密度など）が異なるため、動作ガス
圧力や前記基板２の位置は異なる。ただし、少なくとも
酸素プラズマを用いるとともに前記超伝導体１表面での
プラズマ等の物理量とその化学的ａｎｄ１０ｒ物理的諸
反応は不変である。(b) In Fig. 1 above, microwave power (IG Hz or more, 10 W to 102 Since the operating gas pressure and the position of the substrate 2 are different, the operating gas pressure and the position of the substrate 2 are different.However, at least oxygen plasma is used, and the physical quantities such as plasma on the surface of the superconductor 1 and its chemical and 10r physical reactions are unchanged.
働
第５１Ａと第６図は別の実施例を示す。これらの実施例
では、前記プラズマ８中にバイアス電位を印加した例え
ばメツシュ状の電極１３を設けたことを特徴とする。前
記バイアス電位（直流ａｎｄ１０ｒ交流）は、バイアス
電源ｌ１１４により任意に設定でき、鹸記基板２を衝撃
するイオン等の荷電粒子のエネルギーとその量を最適制
御し、安定で良質の超伝導体１を作製するのに効果的で
ある。ここで、第５図は外部磁界とマイクロ波電力を組
合せた実施例を、第６図は外部磁界を用いないときの一
実施例を示す。なお、１０は超伝導素材（超微粒子状な
ど）、１２は前記超微粒子状超伝導素材を作製するため
の加熱蒸発装置（超微粒子など生成装置）を示す。Figures 51A and 6 show alternative embodiments. These embodiments are characterized in that, for example, a mesh-shaped electrode 13 to which a bias potential is applied is provided in the plasma 8. The bias potential (DC and 10R AC) can be arbitrarily set by the bias power supply 114, and the energy and amount of charged particles such as ions bombarding the substrate 2 can be optimally controlled to produce a stable and high quality superconductor 1. It is effective for making. Here, FIG. 5 shows an embodiment in which an external magnetic field and microwave power are combined, and FIG. 6 shows an embodiment in which no external magnetic field is used. Note that 10 indicates a superconducting material (such as ultrafine particles), and 12 indicates a heating evaporation device (a device for producing ultrafine particles) for producing the superconducting material in the form of ultrafine particles.
上記説明ではＹ−Ｂａ−Ｃｕ−０について述べたが、Ｌ
ａ−３ｒ−Ｃｕ−０，Ｌａ−Ｂａ−Ｃｕ−０など素材お
よびその導入法などは特に限定するものではない（酸化
物系超伝導材料共通）。In the above explanation, Y-Ba-Cu-0 was described, but L
The materials such as a-3r-Cu-0 and La-Ba-Cu-0 and their introduction methods are not particularly limited (common to oxide-based superconducting materials).
本発明によれば、超伝導体作製工程に少なくとも酸素プ
ラズマを用いることにより、活性な酸素原子（ラジカル
などの活性な中性粒子も含む）とその荷電粒子と超伝導
素材との化学的ａｎｄ１０ｒ物理的反応が促進され、短
時間で結晶が成長し、良質（高温低抵抗率）で安定な超
伝導材料を作製できる効果がある。According to the present invention, by using at least oxygen plasma in the superconductor manufacturing process, active oxygen atoms (including active neutral particles such as radicals), their charged particles, and superconducting materials can be chemically and This has the effect of promoting chemical reactions, allowing crystals to grow in a short time, and producing stable superconducting materials of high quality (high temperature and low resistivity).
第１図は本発明は超伝導材料製造方法を説明するための
装置の概略図、第２図は従来技術の概略施例を示す概略
図である。
１・・・・・・超伝導体、２・・・・・・基板。
３・・・・・・加熱ａｎｄ１０ｒ冷却器、４・・・・・
・真空容器、５・・・・・・電力供給器、６・・・・・
・高周波（マイクロ波含む）発生器、７・・・・・・磁
界発生器、８・・・・・・プラズマ、９・・・・・・電
気炉、１０・・・・・・超伝導素材、１１・・・・・・
バイアス電源！、１２・・・・・・超微粒子生成装置、
１３・・・・・・電極、１４・・・・・・バイアス電源
■。
第７回
第 ３ 回
忌／ｌ （社意口爪〕
項４圓
（イ）
２１ｔ表FIG. 1 is a schematic diagram of an apparatus for explaining the method of manufacturing a superconducting material according to the present invention, and FIG. 2 is a schematic diagram showing a schematic embodiment of the prior art. 1...Superconductor, 2...Substrate. 3... Heating and 10r cooler, 4...
・Vacuum container, 5...Power supply device, 6...
・High frequency (including microwave) generator, 7... Magnetic field generator, 8... Plasma, 9... Electric furnace, 10... Superconducting material , 11...
Bias power supply! , 12... Ultrafine particle generator,
13... Electrode, 14... Bias power supply ■. 7th 3rd Anniversary/l (Social Intent) Section 4 En (A) 21t Table
Claims (10)
ズマを用いたことを特徴とする超伝導材料の製造方法。1. A method for producing a superconducting material, characterized in that at least oxygen plasma is used in the superconductor production process.
または直流電力の少なくとも一方を用いて、定常および
／またはパルス的に発生させたことを特徴とする第１項
の超伝導材料の製造方法。2. 2. The method for producing a superconducting material according to item 1, wherein the oxygen plasma is generated in a steady and/or pulsed manner using at least one of high frequency (including microwave) power and direct current power.
特徴とする第１項あるいは第２項の超伝導材料の製造方
法。3. 2. The method for producing a superconducting material according to item 1 or 2, characterized in that an external magnetic field is used to generate the oxygen plasma.
して反応領域に導入し、上記酸素プラズマと化学的およ
び／または物理的に反応させて超伝導薄膜を作製したこ
とを特徴とする第１項から第３項までのいずれか１つの
項の超伝導材料の製造方法。4. A first method characterized in that a superconducting material constituting a superconductor is introduced into a reaction region in the form of (ultra)fine particles and reacted chemically and/or physically with the oxygen plasma to produce a superconducting thin film. A method for producing a superconducting material according to any one of paragraphs 1 to 3.
記酸素プラズマと化学的および／または物理的に反応さ
せて超伝導体を作製したことを特徴とする第１項から第
３項までのいずれか１つの項の超伝導材料の製造方法。5. Any of items 1 to 3, characterized in that the superconductor is produced by introducing a superconducting material in the form of pellets, wires, etc., and reacting chemically and/or physically with the oxygen plasma. A method for manufacturing a superconducting material in one term.
に用いたことを特徴とする第１項から第５項までのいず
れか１つの項の超伝導材料の製造方法。6. The method for producing a superconducting material according to any one of items 1 to 5, characterized in that the oxygen plasma is used for at least the oxidation of the superconductor.
ングに用いたことを特徴とする第１項から第５項までの
いずれか１つの項の超伝導材料の製造方法。7. The method for producing a superconducting material according to any one of items 1 to 5, characterized in that the oxygen plasma is used at least for annealing the superconductor.
る第１項から第７項までのいずれか１つの項の超伝導材
料の製造方法。8. 8. The method for producing a superconducting material according to any one of items 1 to 7, characterized in that the substrate is heated and/or cooled.
のバイアス電位を与えたことを特徴とする第１項から第
８項までのいずれか１つの項の超伝導材料の製造方法。9. Direct current and/or alternating current (including high frequency) on the above board
The method for producing a superconducting material according to any one of items 1 to 8, characterized in that a bias potential of .
高周波含む）のバイアス電位を印加した電極を設け、上
記超伝導体を構成する元素および酸素原子（分子）のイ
オンまたは電子のエネルギーとこれらの量を制御したこ
とを特徴とする第１項から第８項までのいずれか１つの
項の超伝導材料の製造方法。10. Direct current and/or alternating current (
Items 1 to 3 are characterized in that the energy and amount of ions or electrons of elements and oxygen atoms (molecules) constituting the superconductor are controlled by providing an electrode to which a bias potential (including high frequency) is applied. A method for producing a superconducting material according to any one of items up to item 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63175021A JPH01133971A (en) | 1987-08-07 | 1988-07-15 | Production of superconducting material |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62-196186 | 1987-08-07 | ||
| JP19618687 | 1987-08-07 | ||
| JP63175021A JPH01133971A (en) | 1987-08-07 | 1988-07-15 | Production of superconducting material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01133971A true JPH01133971A (en) | 1989-05-26 |
Family
ID=26496414
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63175021A Pending JPH01133971A (en) | 1987-08-07 | 1988-07-15 | Production of superconducting material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01133971A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193483A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Production of superconductive material |
| JPH03146418A (en) * | 1989-10-31 | 1991-06-21 | Res Dev Corp Of Japan | Method and device for forming oxide hightemperature superconducting film by plasma-excitation vaporization |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63314719A (en) * | 1987-06-17 | 1988-12-22 | Furukawa Electric Co Ltd:The | Manufacture of ceramic superconductive formed body |
| JPS649853A (en) * | 1987-07-01 | 1989-01-13 | Furukawa Electric Co Ltd | Production of feedstock powder for ceramic superconductor |
| JPS6465004A (en) * | 1987-05-18 | 1989-03-10 | Sumitomo Electric Industries | Method for modifying superconductive material |
-
1988
- 1988-07-15 JP JP63175021A patent/JPH01133971A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6465004A (en) * | 1987-05-18 | 1989-03-10 | Sumitomo Electric Industries | Method for modifying superconductive material |
| JPS63314719A (en) * | 1987-06-17 | 1988-12-22 | Furukawa Electric Co Ltd:The | Manufacture of ceramic superconductive formed body |
| JPS649853A (en) * | 1987-07-01 | 1989-01-13 | Furukawa Electric Co Ltd | Production of feedstock powder for ceramic superconductor |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0193483A (en) * | 1987-10-05 | 1989-04-12 | Kanegafuchi Chem Ind Co Ltd | Production of superconductive material |
| JPH03146418A (en) * | 1989-10-31 | 1991-06-21 | Res Dev Corp Of Japan | Method and device for forming oxide hightemperature superconducting film by plasma-excitation vaporization |
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