JPH01132779A - Hard carbon film-coated metallic substrate - Google Patents
Hard carbon film-coated metallic substrateInfo
- Publication number
- JPH01132779A JPH01132779A JP62290416A JP29041687A JPH01132779A JP H01132779 A JPH01132779 A JP H01132779A JP 62290416 A JP62290416 A JP 62290416A JP 29041687 A JP29041687 A JP 29041687A JP H01132779 A JPH01132779 A JP H01132779A
- Authority
- JP
- Japan
- Prior art keywords
- hard carbon
- carbon film
- thin film
- metal substrate
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910021385 hard carbon Inorganic materials 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 239000010408 film Substances 0.000 claims abstract description 63
- 239000010409 thin film Substances 0.000 claims abstract description 43
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 33
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- 239000001301 oxygen Substances 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910000640 Fe alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- 229910001069 Ti alloy Inorganic materials 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 5
- 230000007797 corrosion Effects 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- -1 Siloxane compounds Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012778 molding material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 208000014451 palmoplantar keratoderma and congenital alopecia 2 Diseases 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000013535 sea water Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Other Surface Treatments For Metallic Materials (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、金属基体の耐摩耗性・耐腐食性の向上に関す
るものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to improving the wear resistance and corrosion resistance of a metal substrate.
ダイヤモンド状炭素膜、アイ・カーボン膜、アモルファ
ス・カーボン膜等と呼ばれる硬質炭素膜は、優れた耐摩
耗性、化学的安定性を持つために、金属基板を覆うこと
により、金属基板の耐摩耗性や耐腐食性を向上させると
いう効果が得られる。Hard carbon films called diamond-like carbon films, i-carbon films, amorphous carbon films, etc. have excellent wear resistance and chemical stability. The effect of improving corrosion resistance and corrosion resistance can be obtained.
しかしながら、硬質炭素膜はシリコンやゲルマニウムの
ような半導体材料には強く密着するが、他の材料たとえ
ばアルミニウムからなる金属基板に対しては密着性が悪
く、金属基板に被覆してもすぐはがれてしまうために、
金属基板を保護することができないという欠点があった
。However, although hard carbon films adhere strongly to semiconductor materials such as silicon and germanium, they have poor adhesion to other materials, such as metal substrates made of aluminum, and easily peel off even when coated on metal substrates. for,
There was a drawback that the metal substrate could not be protected.
そこで、本発明は上記欠点を解決し、半導体材料以外の
材料からなる金属基板と、硬質炭素膜との密着性を向上
させることを目的とする。Therefore, an object of the present invention is to solve the above-mentioned drawbacks and improve the adhesion between a metal substrate made of a material other than a semiconductor material and a hard carbon film.
前記目的を達成するために、本発明の第１実施例に対応
する第１図を用いて説明すると、金属基体（１）上に硬
質炭素膜（３）を形成した硬質炭素膜を施した金属基体
（１）に於いて、金属基体（１）と硬質炭素膜（３）と
の間に、シリコン、炭素および酸素の化合物からなる薄
膜（２）を形成したことを技術的要件としている。In order to achieve the above object, a description will be given with reference to FIG. 1 corresponding to the first embodiment of the present invention. The technical requirement is that, in the base body (1), a thin film (2) made of a compound of silicon, carbon, and oxygen is formed between the metal base body (1) and the hard carbon film (3).
尚、前記薄膜（２）は真空蒸着、スパッタリング、ＣＶ
Ｄ、プラズマＣＶＤ、イオンビーム等のドライプロセス
、もしくは塗布等のウェット・プロセスによって設ける
ことができる。Note that the thin film (2) is formed by vacuum evaporation, sputtering, CV
It can be provided by a dry process such as D, plasma CVD or ion beam, or a wet process such as coating.
〔作用〕
以上によれば、金属基板（１）と硬質炭素膜（３）との
間に前記薄１１１（２）を形成したために、前記薄膜（
２）により前記金属基板（１）と硬質炭素膜（３）との
密着性を強化し、金属基板（１）を硬質炭素膜（３）に
よって被覆することができる。その結果、金属基板（１
）を低摩擦化し、その耐摩耗性・耐腐食性などを向上さ
せることができる。硬質炭素膜（３）の性質を変えるこ
とにより、硬質炭素膜（３）の表面を半導電性から絶縁
性にしたり、その表面を黒色化することも可能である。[Function] According to the above, since the thin film 111 (2) is formed between the metal substrate (1) and the hard carbon film (3), the thin film (
2) can strengthen the adhesion between the metal substrate (1) and the hard carbon film (3), and cover the metal substrate (1) with the hard carbon film (3). As a result, the metal substrate (1
) can reduce friction and improve its wear resistance, corrosion resistance, etc. By changing the properties of the hard carbon film (3), it is also possible to change the surface of the hard carbon film (3) from semiconductive to insulating, or to make the surface black.
上記薄膜（２）は通常−層で十分であるが、場合によっ
ては多層構造にすることにより、より一層の効果を得る
ことができる。その際、前記薄膜（２）と金属基板（１
）との接続面付近の酸素濃度が、前記薄膜（２）と硬質
炭素膜（３）との接続面付近の酸素濃度よりも大きいと
、効果がさらに高くなることが分り、また多層構造にし
た場合、硬質炭素膜（３）に接続する一層は酸素を含ま
なくても密着性が向上する。Although it is usually sufficient for the thin film (2) to have a single layer, in some cases, even more effects can be obtained by forming it into a multilayer structure. At that time, the thin film (2) and the metal substrate (1
) It was found that the effect is even higher when the oxygen concentration near the connection surface between the thin film (2) and the hard carbon film (3) is higher than the oxygen concentration near the connection surface between the thin film (2) and the hard carbon film (3). In this case, the adhesion is improved even if the layer connected to the hard carbon film (3) does not contain oxygen.
前述の多層構造において、はっきりした境界をもたず、
組成が連続的に変化し、金属基板（１）との接続面から
硬質炭素膜（３）との接続面に向かって酸素濃度が連続
的に減少する薄膜でも同様な効果が得られる。この場合
にも硬質炭素膜（３）と薄膜との接続面が酸素を含まな
くても密着性が向上することが確認できた。In the multilayer structure mentioned above, there are no clear boundaries,
A similar effect can be obtained with a thin film in which the composition changes continuously and the oxygen concentration continuously decreases from the connection surface with the metal substrate (1) to the connection surface with the hard carbon film (3). In this case as well, it was confirmed that the adhesion was improved even if the connection surface between the hard carbon film (3) and the thin film did not contain oxygen.
第１図は本発明の第１実施例であって、金属基板１は５
ｔｌＳ３０４研慶品または、その研磨後、無電解でＮ１
−Ｐメツキしたものを用い、金属基板１の上面に低酸素
濃度の薄＃２を厚さ０．５μｍで形成し、さらに薄膜２
の上に厚さ２．０μｍの硬質炭素膜３を形成した。FIG. 1 shows a first embodiment of the present invention, in which a metal substrate 1 has five
tlS304 polished product or after polishing, electroless N1
A thin film #2 with a low oxygen concentration is formed to a thickness of 0.5 μm on the upper surface of the metal substrate 1 using a P-plated material.
A hard carbon film 3 having a thickness of 2.0 μm was formed thereon.
第２図は本発明の第２実施例であって、第１実施例と同
様に用いた金属基板１の上面に、高酸素濃度の薄膜４を
厚さ０．５μｍで形成し、その上に低酸素濃度の薄膜２
を厚さ０．５μｍで形成し、さらにその上に厚さ２．０
μｍの硬質炭素膜３を順次形成した。FIG. 2 shows a second embodiment of the present invention, in which a thin film 4 with a high oxygen concentration is formed to a thickness of 0.5 μm on the upper surface of the metal substrate 1 used in the same manner as in the first embodiment. Thin film with low oxygen concentration 2
is formed with a thickness of 0.5 μm, and on top of that a layer with a thickness of 2.0 μm is formed.
A hard carbon film 3 having a thickness of μm was sequentially formed.
第３図は本発明の第３実施例であって、第１実施例と同
様に用いた金属基板１の上面に、高酸素濃度の薄膜４を
厚さ０．５μｍで形成し、その上に酸素を含まない無酸
素濃度の薄膜５を厚さ０．５μｍで形成し、さらにその
上に厚さ２．０μｍの硬質炭素１１１３を順次形成した
。FIG. 3 shows a third embodiment of the present invention, in which a thin film 4 with a high oxygen concentration is formed to a thickness of 0.5 μm on the upper surface of the metal substrate 1 used in the same manner as in the first embodiment. A thin film 5 containing no oxygen and having an oxygen-free concentration was formed to a thickness of 0.5 μm, and a hard carbon 1113 having a thickness of 2.0 μm was successively formed thereon.
第４図は本発明の第４実施例であって、第１実施例と同
様に用いた金属基板ｌの上面に、酸素濃度が連続的に変
化する薄膜６を厚さ１．０μｍで形成し、その上に厚さ
２．０μｍの硬質炭素膜３を形成した。前記薄膜６は金
属基板ｌとの接続面での酸素濃度が高く、硬質炭素膜３
との接続面に向かって酸素濃度が連続的に減少し、硬質
炭素膜との接続面では酸素濃度はほぼ零になるようにし
た。FIG. 4 shows a fourth embodiment of the present invention, in which a thin film 6 with a thickness of 1.0 μm in which the oxygen concentration changes continuously is formed on the upper surface of the metal substrate l used in the same manner as in the first embodiment. A hard carbon film 3 having a thickness of 2.0 μm was formed thereon. The thin film 6 has a high oxygen concentration at the connection surface with the metal substrate l, and the hard carbon film 3
The oxygen concentration decreased continuously toward the connection surface with the hard carbon film, and reached almost zero at the connection surface with the hard carbon film.
第５図は、前記実施例と比較するための第１比較例で、
第１実施例と同様に用いた金属基板１の上面に、厚さ２
．０μｍの硬質炭素膜３を形成した。FIG. 5 shows a first comparative example for comparison with the above embodiment,
A layer with a thickness of 2
．． A hard carbon film 3 with a thickness of 0 μm was formed.
第６図は、前記実施例と比較するための第２比較例で、
第１実施例と同様に用いた金属基板１の上面に、酸素を
含まない無酸素薄膜５を厚さ０．５μｍで形成し、その
上に厚さ２．０μｍの硬質炭素膜３を形成した。FIG. 6 shows a second comparative example for comparison with the above embodiment,
An oxygen-free thin film 5 containing no oxygen was formed with a thickness of 0.5 μm on the upper surface of the metal substrate 1 used in the same manner as in the first example, and a hard carbon film 3 with a thickness of 2.0 μm was formed thereon. .
第７図は、前記実施例と比較するための第３比較例で、
第１実施例と同様に用いた金属基板冒の上面に、厚さ０
．５μｍの酸化シリコン層７を形成し、その上に厚さ２
．０μｍの硬質炭素膜３を形成した。FIG. 7 shows a third comparative example for comparison with the above embodiment,
A thickness of 0 was applied to the upper surface of the metal substrate used in the same manner as in the first embodiment.
．． A silicon oxide layer 7 with a thickness of 5 μm is formed, and a layer 7 with a thickness of 2 μm is formed on it.
．． A hard carbon film 3 with a thickness of 0 μm was formed.
各実施例および各比較例の薄膜２．４〜６、硬質炭素膜
３は、高周波プラズマＣＶＤ法によって形成された。薄
膜の形成には、原料に有機シリコン化合物蒸気を用い、
硬質炭素膜の形成には有機炭素化合物蒸気を用いる０表
１は各薄膜の形成条件と、その組成を示す。The thin films 2.4 to 6 and the hard carbon film 3 of each Example and each Comparative Example were formed by high frequency plasma CVD. To form a thin film, organic silicon compound vapor is used as a raw material,
Organic carbon compound vapor is used to form the hard carbon film. Table 1 shows the conditions for forming each thin film and its composition.
ＴＭＳ ：テトラメチルシラン
表１
組成はＳｉＣとＯとの比をＸ線光電子法により、Ｃとｔ
ｒとの比は膜の酸素／ヘリウム混合ガス中での燃焼ガス
をガスクロマトグラフィーにより分析して得た。TMS: Tetramethylsilane Table 1 The composition was determined by X-ray photoelectron method using the ratio of SiC and O.
The ratio to r was obtained by analyzing the combustion gas of the membrane in an oxygen/helium mixed gas by gas chromatography.
第４実施例（第４図参照）において、酸素濃度が連続的
に変化する薄膜６は、最初ＴＭＳと酸素との流量をそれ
ぞれ２０３ＣＣ１１％ ５０ｓｅｃｍでスタートし、酸
素の濃度を徐々に減らしていった。Ｘ線光電子分光によ
り、深さ方向の組成変化を調べたところ、酸素濃度が金
属基板１に近いほど高くなっていた。In the fourth embodiment (see Fig. 4), the thin film 6 in which the oxygen concentration was continuously changed was formed by starting the flow rate of TMS and oxygen at 203 CC 11% 50 sec each, and gradually reducing the oxygen concentration. . When the composition change in the depth direction was investigated by X-ray photoelectron spectroscopy, it was found that the closer the oxygen concentration was to the metal substrate 1, the higher it was.
本実施例では、原料にテトラメチルシランを用いたが１
．ヘキサメチレジシロキサンのようなシロキサン化合物
、ヘキサメチルジシラザンのようなシラザン化合物、テ
トラエトキシシランのようなフルコキシシランを用いて
もよい。In this example, tetramethylsilane was used as the raw material, but 1
．． Siloxane compounds such as hexamethylenedisiloxane, silazane compounds such as hexamethyldisilazane, and flukoxysilanes such as tetraethoxysilane may also be used.
また硬質炭素膜３の製造には、メタン／水素の混合ガス
を圧力０．Ｉ Ｔｏｒｒｓ高周波数電力３００Ｗにて作
製した。In addition, to manufacture the hard carbon membrane 3, a mixed gas of methane/hydrogen is used at a pressure of 0. It was produced using I Torrs high frequency power of 300W.
第３比較例（第７図参照）の酸化シリコン膜７はスパッ
タ法により作製した。The silicon oxide film 7 of the third comparative example (see FIG. 7) was produced by a sputtering method.
各実施例および各比較例の密着性試験を、■純水中での
超音波洗争試験、０１６時間中のＣＡＳＳ試験による２
つの方法で行い、その試験結果を、表２に示す。The adhesion tests of each Example and each Comparative Example were conducted by ■ an ultrasonic washing test in pure water, and a CASS test during 016 hours.
The test results are shown in Table 2.
表２
表２により、○印は！ＡＭなしを、Δ印は硬質炭素膜だ
けの剥離を、ｘ印は全ての剥離を示す、従って、シリコ
ン、炭素および酸素を主成物とする薄膜は、金属基板１
と硬質炭素膜３との密着性を高める中間層として有用で
あることが確認できた。Table 2 According to Table 2, the circle is marked! No AM, Δ mark indicates peeling of only the hard carbon film, and x mark indicates peeling of all parts. Therefore, the thin film mainly composed of silicon, carbon, and oxygen is not attached to the metal substrate 1.
It was confirmed that it is useful as an intermediate layer that enhances the adhesion between the carbon film and the hard carbon film 3.
以上の実施例によれば、前記薄膜を介して硬質炭素膜３
に被覆された金属基板ｌは、硬質炭素膜３のために、耐
擦傷性や耐摩耗性などが向上でき、それによって軸受け
、ステージ、カバーなどの耐久性部品や、海水中、酸・
アルカリ等の薬品にも使用することができる。According to the above embodiment, the hard carbon film 3
Because of the hard carbon film 3, the coated metal substrate l has improved scratch resistance and abrasion resistance, which makes it suitable for durable parts such as bearings, stages, and covers, as well as for use in seawater, acids,
It can also be used for chemicals such as alkalis.
また、硬質炭素膜３の表面は化学的に不活性であるため
に、本発明による金属基体を合成樹脂やガラス等の成形
金型に用いれば、成形材料と金型が反応して成形品や金
型を変質することを防げる。In addition, since the surface of the hard carbon film 3 is chemically inert, if the metal substrate according to the present invention is used in a mold for molding synthetic resin, glass, etc., the molding material and the mold will react to form a molded product. Prevents deterioration of the mold.
同様に、化学的不活性のために吸着物質が少なく、真空
中でのガス放出が極めて少ない。従って真空装置用部品
としても有用である。特に、硬質炭素膜として黒色な膜
を使用すれば、真空中で使用でき、かつ光の反射を防ぐ
ための部品として、例えば真空分光器等の真空光学装置
用部品として有用である。Similarly, due to chemical inertness, there is less adsorbed material and very little outgassing in vacuum. Therefore, it is useful as a part for vacuum equipment. In particular, if a black film is used as the hard carbon film, it can be used in a vacuum and is useful as a component for preventing light reflection, for example, as a component for a vacuum optical device such as a vacuum spectrometer.
以上の本発明によれば、金属基板と硬質炭素膜との間に
シリコン、炭素および酸素を主成分とする薄膜を形成し
たために、半導体材料以外の材料からなる金属基板と硬
質炭素膜との密着性を向上させることができる。According to the present invention, since a thin film mainly composed of silicon, carbon, and oxygen is formed between the metal substrate and the hard carbon film, the metal substrate made of a material other than a semiconductor material and the hard carbon film are in close contact with each other. can improve sex.
第１図は本発明の第１実施例で、金属基板１上に、低酸
素濃度の１１２および硬質炭素膜３を順次形成した状態
を示す断面図である。
第２図は本発明の第２実施例で、金属基板１上に、高酸
素濃度の薄膜４、低酸素濃度の薄膜２および硬質炭素膜
３を順次形成した状態を示す断面図である。
第３図は本発明の第３実施例で、金属基板１上に、高酸
素濃度の薄膜４、無酸素濃度の薄膜５および硬質炭素膜
３を順次形成した状態を示す断面図である。
第４図は本発明の第４実施例で、金属基板１上に、酸素
濃度が連続的に変化する薄膜６および硬質炭素膜３を順
次形成した状態を示す断面図である。
第５図は本発明の第１比較例で、金属基板１上に、硬質
炭素膜３を形成した状態を示す断面図である。
第６図は本発明の第２比較例で、金属基板１上に、無酸
素薄膜５および硬質炭素膜３を順次形成した状態を示す
断面図である。
第７図は本発明の第３比較例で、金属基板１上に、酸化
シリコン膜７および硬質炭素膜３を順次形成した状態を
示す断面図である。
〔主要部分の符号の説明〕
ト・−・・・−・−金属基体 ２．４〜Ｇ−−−−
−−−−一薄膜３−・−−一−−−−・−硬質炭素脱
出、願人 日本光学工業株式会社FIG. 1 is a cross-sectional view showing a first embodiment of the present invention in which a low oxygen concentration film 112 and a hard carbon film 3 are sequentially formed on a metal substrate 1. FIG. 2 is a cross-sectional view showing a second embodiment of the present invention, in which a thin film 4 with a high oxygen concentration, a thin film 2 with a low oxygen concentration, and a hard carbon film 3 are sequentially formed on a metal substrate 1. FIG. 3 is a cross-sectional view showing a third embodiment of the present invention, in which a thin film 4 with a high oxygen concentration, a thin film 5 with an oxygen-free concentration, and a hard carbon film 3 are sequentially formed on a metal substrate 1. FIG. 4 is a cross-sectional view showing a fourth embodiment of the present invention, in which a thin film 6 whose oxygen concentration changes continuously and a hard carbon film 3 are successively formed on a metal substrate 1. FIG. 5 is a first comparative example of the present invention, which is a sectional view showing a hard carbon film 3 formed on a metal substrate 1. FIG. 6 is a sectional view showing a second comparative example of the present invention, in which an oxygen-free thin film 5 and a hard carbon film 3 are sequentially formed on a metal substrate 1. FIG. 7 is a third comparative example of the present invention, and is a cross-sectional view showing a state in which a silicon oxide film 7 and a hard carbon film 3 are sequentially formed on a metal substrate 1. [Explanation of symbols of main parts] G - - - Metal base 2.4 - G - - -
−−−−Thin film 3−・−−1−−−−・−Hard carbon escape, applicant Nippon Kogaku Kogyo Co., Ltd.
Claims (4)
覆を施した金属基体に於いて、 金属基体と硬質炭素膜との間に、シリコン、炭素および
酸素の化合物からなる薄膜を形成したことを特徴とする
硬質炭素膜被覆を施した金属基体。(1) A hard carbon film is formed on a metal substrate.A thin film made of a compound of silicon, carbon, and oxygen is formed between the metal substrate and the hard carbon film on a metal substrate coated with a hard carbon film. A metal substrate coated with a hard carbon film characterized by:
の一面の酸素含有量は、硬質炭素膜と接触する前記薄膜
の他面の酸素含有量よりも多く、前記薄膜の他面の酸素
含有量は実質的に零であることを特徴とする特許請求の
範囲第１項記載の硬質炭素膜被覆を施した金属基体。(2) In the thin film, the oxygen content on one side of the thin film that is in contact with the metal substrate is higher than the oxygen content on the other side of the thin film that is in contact with the hard carbon film, and the oxygen content on the other side of the thin film that is in contact with the hard carbon film is A metal substrate coated with a hard carbon film according to claim 1, wherein the content is substantially zero.
許請求の範囲第１項記載の硬質炭素膜被覆を施した金属
基体。(3) A metal substrate coated with a hard carbon film according to claim 1, wherein the thin film contains hydrogen.
合金、チタン合金、アルミニウム合金のいずれかである
ことを特徴とする特許請求の範囲第１項、又は第２項記
載の金属基体。(4) The metal substrate according to claim 1 or 2, wherein the metal substrate is any one of an iron alloy, a nickel alloy, a cemented carbide, a titanium alloy, and an aluminum alloy. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62290416A JP2623611B2 (en) | 1987-11-17 | 1987-11-17 | Metal substrate coated with hard carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62290416A JP2623611B2 (en) | 1987-11-17 | 1987-11-17 | Metal substrate coated with hard carbon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01132779A true JPH01132779A (en) | 1989-05-25 |
| JP2623611B2 JP2623611B2 (en) | 1997-06-25 |
Family
ID=17755743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62290416A Expired - Lifetime JP2623611B2 (en) | 1987-11-17 | 1987-11-17 | Metal substrate coated with hard carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2623611B2 (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03199376A (en) * | 1989-12-27 | 1991-08-30 | Shimadzu Corp | Formation of hard carbon film |
| EP0550752A1 (en) * | 1990-09-28 | 1993-07-14 | Citizen Watch Co. Ltd. | Reed for high speed loom |
| JPH07316818A (en) * | 1994-05-31 | 1995-12-05 | Sanyo Electric Co Ltd | Head carbon coating film covered substrate and its formation |
| US5511587A (en) * | 1990-09-28 | 1996-04-30 | Citizen Watch Co., Ltd. | Wear-resistant reed for a high-speed loom |
| JPH10500609A (en) * | 1994-03-03 | 1998-01-20 | モンサント カンパニー | High wear resistance and flexible coatings for flexible substrates |
| US5712000A (en) * | 1995-10-12 | 1998-01-27 | Hughes Aircraft Company | Large-scale, low pressure plasma-ion deposition of diamondlike carbon films |
| WO2000015869A1 (en) * | 1998-09-11 | 2000-03-23 | Commissariat A L'energie Atomique | Part based on aluminium coated with amorphous hard carbon |
| JP2005068387A (en) * | 2003-08-28 | 2005-03-17 | National Institute Of Advanced Industrial & Technology | Method for manufacturing carbon-based two-layered film excellent in peeling resistance under water |
| JP2012004871A (en) * | 2010-06-17 | 2012-01-05 | Yasuo Kondo | Ultrasonic horn |
| JP2015227493A (en) * | 2014-06-02 | 2015-12-17 | 地方独立行政法人山口県産業技術センター | Composite hard film member and method for manufacturing the same |
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|---|---|---|---|---|
| JPS5842472A (en) * | 1981-09-07 | 1983-03-11 | Semiconductor Energy Lab Co Ltd | Thermal head |
| JPS59182300A (en) * | 1983-03-30 | 1984-10-17 | Mitsubishi Metal Corp | Vapor-phase synthesis method of diamond |
| JPS61106469A (en) * | 1984-10-25 | 1986-05-24 | 株式会社 伊藤喜工作所 | Refractory heat-insulative wall |
| JPS61106478A (en) * | 1984-10-29 | 1986-05-24 | 東芝タンガロイ株式会社 | Diamond coated part |
| JPS61106494A (en) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | Member coated with diamond and its production |
| JPS62116776A (en) * | 1985-11-14 | 1987-05-28 | Mitsubishi Chem Ind Ltd | Production of thin film |
| JPS62247076A (en) * | 1986-04-18 | 1987-10-28 | Hitachi Ltd | Method for coating plastic pipe |
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- 1987-11-17 JP JP62290416A patent/JP2623611B2/en not_active Expired - Lifetime
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842472A (en) * | 1981-09-07 | 1983-03-11 | Semiconductor Energy Lab Co Ltd | Thermal head |
| JPS59182300A (en) * | 1983-03-30 | 1984-10-17 | Mitsubishi Metal Corp | Vapor-phase synthesis method of diamond |
| JPS61106469A (en) * | 1984-10-25 | 1986-05-24 | 株式会社 伊藤喜工作所 | Refractory heat-insulative wall |
| JPS61106478A (en) * | 1984-10-29 | 1986-05-24 | 東芝タンガロイ株式会社 | Diamond coated part |
| JPS61106494A (en) * | 1984-10-29 | 1986-05-24 | Kyocera Corp | Member coated with diamond and its production |
| JPS62116776A (en) * | 1985-11-14 | 1987-05-28 | Mitsubishi Chem Ind Ltd | Production of thin film |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03199376A (en) * | 1989-12-27 | 1991-08-30 | Shimadzu Corp | Formation of hard carbon film |
| EP0550752A1 (en) * | 1990-09-28 | 1993-07-14 | Citizen Watch Co. Ltd. | Reed for high speed loom |
| EP0550752A4 (en) * | 1990-09-28 | 1994-01-26 | Citizen Watch Co. Ltd. | |
| US5511587A (en) * | 1990-09-28 | 1996-04-30 | Citizen Watch Co., Ltd. | Wear-resistant reed for a high-speed loom |
| JPH10500609A (en) * | 1994-03-03 | 1998-01-20 | モンサント カンパニー | High wear resistance and flexible coatings for flexible substrates |
| JPH07316818A (en) * | 1994-05-31 | 1995-12-05 | Sanyo Electric Co Ltd | Head carbon coating film covered substrate and its formation |
| US5712000A (en) * | 1995-10-12 | 1998-01-27 | Hughes Aircraft Company | Large-scale, low pressure plasma-ion deposition of diamondlike carbon films |
| WO2000015869A1 (en) * | 1998-09-11 | 2000-03-23 | Commissariat A L'energie Atomique | Part based on aluminium coated with amorphous hard carbon |
| JP2005068387A (en) * | 2003-08-28 | 2005-03-17 | National Institute Of Advanced Industrial & Technology | Method for manufacturing carbon-based two-layered film excellent in peeling resistance under water |
| JP2012004871A (en) * | 2010-06-17 | 2012-01-05 | Yasuo Kondo | Ultrasonic horn |
| JP2015227493A (en) * | 2014-06-02 | 2015-12-17 | 地方独立行政法人山口県産業技術センター | Composite hard film member and method for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2623611B2 (en) | 1997-06-25 |
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