JPH01130563U - - Google Patents
Info
- Publication number
- JPH01130563U JPH01130563U JP2636288U JP2636288U JPH01130563U JP H01130563 U JPH01130563 U JP H01130563U JP 2636288 U JP2636288 U JP 2636288U JP 2636288 U JP2636288 U JP 2636288U JP H01130563 U JPH01130563 U JP H01130563U
- Authority
- JP
- Japan
- Prior art keywords
- photothyristor
- diffusion region
- semiconductor substrate
- vertical
- utility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000012535 impurity Substances 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
Landscapes
- Thyristors (AREA)
Description
第1図AないしEは本考案の一実施例を説明す
る断面図、第2図AないしEは従来例を説明する
断面図である。 1:半導体基板、4:R1層、9:溝。
る断面図、第2図AないしEは従来例を説明する
断面図である。 1:半導体基板、4:R1層、9:溝。
Claims (1)
- 半導体基板の表面と裏面を貫く不純物拡散領域
を備えた縦型のフオトサイリスタにおいて、裏面
の拡散領域部にV形の溝を形成してなることを特
徴とするフオトサイリスタ。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2636288U JPH01130563U (ja) | 1988-02-29 | 1988-02-29 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2636288U JPH01130563U (ja) | 1988-02-29 | 1988-02-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01130563U true JPH01130563U (ja) | 1989-09-05 |
Family
ID=31247913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2636288U Pending JPH01130563U (ja) | 1988-02-29 | 1988-02-29 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01130563U (ja) |
-
1988
- 1988-02-29 JP JP2636288U patent/JPH01130563U/ja active Pending