JPH01130517A - Plasma cvd device - Google Patents

Abstract

PURPOSE:To enable forming a thin film simultaneously on both surfaces of each substrate, by applying an electric power between each substrate and each raw gas flow-out electrode to generate plasma on and above the both surfaces of each substrate. CONSTITUTION:Air in a vacuum reaction case 1 is evacuated, and a raw gas supplied together with a carrier gas from each raw gas supplying pipes 15 and 16 is caused to flow to both surfaces of each substrate 3 through gas flow- out holes 11 and 14 of each raw gas flow-out electrodes 7 and 8. When applying from plasma power source 5 to each substrate 3 a high-frequency electric power, plasma generates between the electrodes 7 and 8 and the substrates 3 placed therebetween to activate the raw gas flowing from the electrodes 7 and 8 in the plasma and form a thin film simultaneously on both surfaces of each substrate 3.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention is directed to Braz v CV D (Chemical V
The present invention relates to a plasma CVD apparatus that forms a thin film on a substrate using the apor deposition method.

[Prior Art] As shown in FIG. 6, a conventional plasma CVO apparatus places a substrate 3 to be processed on a substrate heater 2 in a vacuum reaction chamber 1.
An electrode 4 is placed above the substrate 3 facing the substrate heater 2, and high frequency power is applied from a high frequency power source 5 between the electrode 4 and the substrate heater 2. A source gas was supplied into the substrate 1 by a source gas supply means 6 made of a pipe, and a thin film was formed on the surface of the substrate 4 by plasma CVD.

[Problems to be Solved by the Invention] However, in such a conventional plasma CVD apparatus, a thin film can only be formed on one side (the upper side) of the substrate 3, so it is difficult to form a thin film on the other side as well. There was a problem with inefficiency as the work had to be done again.

An object of the present invention is to provide a plasma CVD apparatus that can simultaneously form thin films on both surfaces of a plurality of substrates.

[Means for Solving the Problems] To explain the configuration of the present invention to achieve the above object, the plasma CVD apparatus of the present invention has a structure in which adjacent electrode surfaces are oriented at a predetermined interval in a vacuum reaction vessel. A total of three or more raw material gas outflow electrodes are arranged in parallel, and substrate holders for supporting each substrate for processing are arranged between the opposing electrode surfaces of the adjacent raw material gas outflow electrodes, and the vacuum reaction vessel A plasma power supply for supplying power to each of the substrates is arranged outside, each of the source gas outflow electrodes is grounded, and a source gas supply pipe for supplying the source gas is connected to each of the source gas outflow electrodes. It is characterized by

In this way, when three or more source gas outflow electrodes are arranged in parallel with the adjacent electrode surfaces facing each other at a predetermined interval, by disposing a substrate between the adjacent electrode surfaces,
Plasma can be generated on both sides of each substrate by each substrate and each source gas outflow electrode on both sides thereof,
In addition, the source gas from each source gas outlet electrode can be supplied to both surfaces of each substrate, and thin films can be formed on both surfaces of each substrate at the same time.

[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings. 1 and 4 show a first embodiment of the present invention. As shown in the figure, in the plasma CVD apparatus of this embodiment, a double-sided raw material gas outflow electrode 7 and a single-sided raw material gas supply electrode 8 are provided in the grounded vacuum reaction vessel 1 on their respective electrode surfaces 10A. , 13A are arranged vertically facing each other in parallel at a predetermined interval. The double-sided raw material gas supply electrode 7 includes a metal distribution chamber forming body 9 in which a triangular pyramid-shaped distribution chamber 8 is opened on opposite surfaces;
It is composed of a metal raw material gas outflow electrode body 10 provided to close the opening of each distribution chamber 8 of the distribution chamber forming body 9,
Each source gas outflow electrode body 10 has a large number of gas outflow holes 11.
are provided in a dispersed manner so that the raw material gas can flow out from the electrode surface 10A of each raw material gas outflow electrode body 10 in mutually opposite directions. The single-sided raw material gas supply electrode 8 includes a metal distribution chamber forming body 12 in which a triangular pyramidal distribution chamber (not shown) is formed on one side, and an opening of the distribution chamber of the distribution chamber forming body 12. The raw material gas outlet electrode body 13 is provided with a large number of distributed gas outlet holes 14, and the electrode surface of each raw material gas outlet electrode body 13 is made of metal. The source gas can flow out from 13A. Each raw material gas outflow electrode 7.8 is connected to a metal raw gas supply pipe 15.16 for supplying raw material gas thereto. Although there are various raw material gases, for example, a benzene-based material is used. Each raw material gas supply pipe 15, 16 is provided to pass through the vacuum reaction vessel 1 in an airtight manner. Each source gas outflow electrode 7.8 is grounded via the source gas supply pipe 15.16 and the vacuum reaction vessel 1. A substrate 3 for processing is supported by a metal substrate holder 17 and placed in the center between opposing electrode surfaces 10A and 13A of adjacent raw material gas outflow electrodes 7 and 8, respectively. In this embodiment, the substrate holder 17 supports two substrates 3 with both sides exposed left and right. The substrate holder 17 is fixed on a truck 18, and the truck 18 runs on a base 19 so that it can be moved into and out of the vacuum reaction vessel 1. The substrate 3 is provided with a plasma power source 5 such as an external high frequency power source.
From matching box 20. Power supply cord 21. High frequency power is applied via the substrate holder 17. An exhaust pipe 22 for evacuation with a vacuum pump (not shown) is provided at the bottom of the vacuum reaction vessel 1.

Although not shown in the drawings, the vacuum reaction vessel 1 is connected to the processing vessel for preheating and the post-treatment vessel for film stabilization via a gate pulp for opening and closing.

Next, a method for forming a thin film using such a plasma CVD apparatus will be described. The inside of the vacuum reaction vessel 1 is evacuated to 0. Keep it at ITOrr level. The raw material gas supplied together with the carrier gas from each raw material gas supply pipe 15.16 is transferred to the gas outlet hole 11.14 of each raw material gas outlet electrode 7°8.
The liquid is allowed to flow out to both sides of each substrate 3. Note that twice as much raw material gas as the source gas sent to the pipe 15 is sent to the pipe 16. When high-frequency power is applied to each substrate 3 from the plasma power supply 5 of 100W or 150W, plasma is generated between each substrate 3 and the source gas outflow electrodes 7.8 on both sides thereof, and flows out from each source gas outflow electrode 7.8. The raw material gas is activated in the plasma, and thin films are simultaneously formed on both sides of each substrate 3. In this case, the frequency of the high frequency wave applied to each board 3 is 13.56 MHz. The high frequency power is electrically matched by a matching box 20 and applied to each substrate 3. Each source gas outflow electrode 7, 8 is symmetrical with respect to the central substrate 3, and the flow rate of the source gas and the distance from the substrate 3 are the same. Exhaust air from the lower center to avoid uneven influence on the plasma.

The film forming time is about 30 seconds. The film formation is completed by turning off the plasma power supply 5 after stopping the supply of the raw material gas. The film formation is started by applying high frequency waves to each substrate 3 and then flowing the raw material gas. Each substrate 3 is held at the same location during film formation. It is preferable that the substrate holder 17 be made as thin as possible to prevent disturbances in the flow of source gas in vacuum.

FIG. 5 shows a second embodiment of the invention. Note that parts corresponding to those in FIG. 1 are designated with the same reference numerals. In this embodiment, two double-sided raw material gas outflow electrodes 7 are used.
This figure shows an example in which the substrates 3 are arranged in parallel so that plasma CVD processing can be performed on the substrate 3 at three locations.

In this way, the film formation process can be performed on more substrates 3 at the same time.

[Effects of the Invention] As explained above, in the plasma CVD apparatus according to the present invention, three or more raw material gas outflow electrodes are arranged in parallel with the adjacent electrode surfaces facing each other at a predetermined interval, and the adjacent electrodes A substrate is placed between the surfaces, and electric power is applied between each substrate and each source gas outflow electrode to generate plasma on both sides of each substrate, and each source gas outflow electrode is placed in the plasma. Since the raw material gas is supplied and activated from the source gas to form a film on each substrate, it is possible to form a film on both sides of each substrate at the same time. Therefore, according to the present invention, film formation by plasma CVD can be performed very efficiently.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing a first embodiment of the plasma CVO apparatus according to the present invention, FIG. 2 is a vertical cross-sectional view of a double-sided raw material gas outlet electrode used in FIG. 1, and FIG. FIG. 1 is a front view of each raw material gas outlet electrode shown in FIG. 1, FIG. 4 is a front view of the substrate holder and its trolley used in FIG. 1, and FIG. A schematic vertical cross-sectional view and FIG. 6 is a front view of a conventional plasma CVD apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum reaction vessel, 3... Substrate, 5... Plasma power supply, 7.8... Raw material gas outflow electrode, IOA, 13
A... Electrode surface, 11.14... Raw material gas outflow hole, 1
5゜16... Raw material gas supply piping, 17... Substrate holder. Figure 2 Figure 3

Claims (1)

[Claims] Three or more raw material gas outlet electrodes are arranged in parallel in a vacuum reaction vessel with adjacent electrode surfaces facing each other at a predetermined interval, and a processing electrode is provided between the opposing electrode surfaces of the adjacent raw material gas outlet electrodes. Substrate holders supporting each substrate are arranged, a plasma power supply for supplying power to each substrate is arranged outside the vacuum reaction vessel, each of the raw material gas outflow electrodes is grounded, and each of the raw material gas outflow electrodes is connected to the A plasma CVD apparatus characterized in that raw material gas supply pipes for supplying raw material gas are connected to each other.