JPH01100914A - Thin film forming method using plasma cvd - Google Patents

Abstract

PURPOSE:To form films on both surfaces of a substrate at the same time, by arranging the substrate between a pair of raw-material-gas blowing electrodes, applying high frequency electric power between the substrate and both raw-material-gas blowing electrodes, and generating plasma on both sides of the substrate. CONSTITUTION:The inside of a vacuum reaction container 1 is evacuated into a vacuum state, and about 0.1Torr is maintained. Raw material gas is supplied through raw material gas feeding means 9 on both sides together with carrier gas. The raw material gas is made to flow out to both sides of a substrate through gas blowing holes 8 of both raw-material-gas blowing electrodes 7. When high frequency electric power is applied to the substrate 3, plasma is generated between the substrate 3 and the raw-material-gas blowing electrodes 7 on both sides of the substrate 3. The raw material gas, which is made to flow out of each raw- material-gas blowing electrode 7, is activated. Thin films are formed on both surfaces of the substrate 3 at the same time. At this time, the high frequency, which is applied on the substrate 3, is made to be 13.56MHz. The high frequency electric power is electrically matched with a matching box 12 and applied to the substrate 3. Both raw-material-gas blowing electrodes 7 are symmetrical with respect to the substrate on the right and left sides. The amounts of the raw material gas and the distances to the substrate 3 have the same values.

Description

[Detailed Description of the Invention] [Field of Industrial Application] Is the present invention a plus? CV D (Chemical V
The present invention relates to a method of forming a thin film using plasma CVD, which forms a thin film on a substrate using a plasma CVD method.

[Prior Art] As shown in FIG. 4, in the conventional method of forming a thin film using plasma CVD, a substrate 3 to be processed is laid down on a substrate heater 2 in a vacuum reaction vessel 1, and a substrate 3 is placed above the substrate 3. The electrode 4 is placed opposite to the substrate heater 2 and high frequency power is applied from a high frequency power source 5 between the electrode 4 and the substrate heater 2, and a raw material gas supply means consisting of a pipe is provided in the vacuum reaction vessel 1. A raw material gas was supplied in step 6, and a thin film was formed on the surface of the substrate 4 by plasma CVD.

[Problems to be solved by the invention] However, the 1M! In the method No. 11, the thin film can only be formed on one side (the upper side) of the substrate 3, so the process of forming the thin film on the other side must be performed again, which has the problem of poor efficiency. Ta.

An object of the present invention is to provide a method for forming a WIj film using plasma CVD, which allows thin films to be formed on both sides of a substrate at the same time.

Means for Solving Problem E] To explain the structure of the present invention to achieve the above object, the MFJ forming method by plasma CVD of the present invention includes a pair of source gas outflow electrodes in a vacuum reaction vessel. A substrate for processing is placed in the center between the two raw material gas outflow electrodes, and the raw material gas is flowed out from both of the raw material gas outflow electrodes toward both sides of the substrate. High-frequency power is supplied between the source gas outflow electrode and plasma is generated between them, and both sides of the substrate are exposed to the substrate in the plasma. It is characterized by forming a crotch.

[Function] In this way, plasma can be prevented from being generated on both sides of the substrate by the substrate and the source gas outflow electrodes on both sides of the substrate, and the source gas from each source gas outflow electrode can be supplied to both sides of the substrate. , Ig on both sides of the blocking board at the same time! can be formed.

[Example] Hereinafter, an example of the present invention will be described in detail with reference to FIGS. 1 to 3. As shown in the figure, the plasma CV of this example
In apparatus D, a pair of source gas supply electrodes 7 are vertically opposed to each other and piped in parallel to each other in the vacuum reaction vessel 1. Each source gas outflow electrode 7 is made of metal and has a large number of gas outflow holes 8 dispersed! ! Q [It's been pulled.

On the back side of each raw material gas outflow m447, a raw material gas consisting of a funnel-shaped distribution chamber forming body 9A made of gold rF4, a metal pipe 9B for supplying the raw material gas to this, and a joint 9C connecting the two. Supply means 9 are provided. The joint 9C is airtightly connected and fixed to the pipe 9B, and the distribution chamber forming body 9
A is attached to the joint 9C by screw connection so that it can move back and forth. The piping 9B is connected to the outside of the vacuum reactor 1 in an airtight manner. The raw material gas outflow electrode 7 is grounded via a raw material gas supply means 9. In the center of both raw material gas outflow electrodes 7, a substrate 3 for processing is placed on a metal substrate holder 10.
It is supported and placed. The board holder 10 is freely fitted into and supported by the upper end of the current-carrying column 11. A matching box 12. is connected to the board 3 from an external high frequency power source 5. High frequency power is applied via the power supply cord 131, the current-carrying column 11, and the substrate holder 10. At the bottom of the vacuum reaction vessel 1, an exhaust 1114 is provided for evacuation using a vacuum pump (not shown).

Next, a method of forming a thin film according to this embodiment using such a plasma CVD apparatus will be explained.

The inside of the vacuum reaction vessel 1 is evacuated to 0. Keep it at ITOrr level. The raw material gas supplied together with the carrier gas from the raw material gas supply means 9 on both sides is made to flow out from the gas outlet holes 8 of both raw material gas outlet electrodes 7 to both sides of the substrate 3 . When high-frequency power is applied to the substrate 3, plasma is generated between the substrate 3 and the source gas outflow electrodes 7 on both sides thereof, and the source gas flowing out from each source gas outflow electrode 7 is activated in the plasma, and the substrate A thin film is formed on both sides of 3 at the same time. In this case, the frequency of the high frequency applied to the substrate 3 is 13.56 HII
Let it be Z.

The high frequency power is electrically matched by a matching box 12 and applied to the substrate 3.

Both source gas outflow electrodes 7 are symmetrical with respect to the substrate 3, and the flow rate of the source gas and the distance from the substrate 3 are the same. Exhaust air from the lower center to avoid uneven influence on the plasma.

The film formation is completed by turning off the high frequency power supply 5 after stopping the supply of the raw material gas. The film formation is started by applying high frequency to the substrate 3 and then flowing the raw material gas.

The substrate 3 is held at the same location during film formation. Board holder 1
It is preferable to make the layer 0 as thin as possible so that the flow of the raw material gas in vacuum is not disturbed.

Experimental example board 3 An aluminum disk of LL 8.89 as (3,5") was used, and the board holder 10 was made of stainless steel. The thickness of the board 3 was 2 to 3 feet. Board 3
The distance between the two raw material gas outlet electrodes 7 was 20 to 50 mm on each side. Each source gas outflow electrode 7 was made of stainless steel, and its outer diameter was 20% or more larger than the outer diameter of the substrate. A heater was wound around the outer periphery of the pipe 9B, and the outer periphery was surrounded by an insulator such as tetrafluoroethylene to control the temperature of the pipe 9 to be constant.

Film forming time: 30 seconds High frequency power: 150 W, 13.561 VHIz Piping temperature: 100°C Carrier gas: Ar, 40 cc/1N Source gas: Monomer that becomes vapor phase at high temperature Film thickness: 300 people Film thickness distribution = 300 people ±5% [Effect of the invention] As explained above, in the plasma CVD thin film forming method according to the present invention, a substrate is placed between a pair of source gas outflow electrodes, and the connection between the substrate and both source gas outflow electrodes is In between, high-frequency power is applied to generate plasma on both sides of the substrate, and raw material gas is supplied into these plasmas from both raw material gas outlet electrodes to activate them, thereby forming a film on the substrate. Therefore, the formation 110 can be performed on both sides of the substrate at the same time. Therefore, according to the present invention, it is possible to efficiently form a film by the plasma CVD method.

[Brief explanation of the drawing]

FIG. 1 is a longitudinal sectional view showing an embodiment of an apparatus for carrying out the thin film forming method by plasma CVD according to the present invention, FIG. 2 is a front view of the raw material gas outlet electrode used in FIG. 1, and FIG. 1 is an electrical system diagram of the apparatus shown in FIG. 1, and FIG. 4 is a longitudinal sectional view of a conventional plasma CVD apparatus. DESCRIPTION OF SYMBOLS 1... Vacuum reaction vessel, 3... Substrate, 5... High frequency power supply, 7... Raw material gas outflow electrode, 8... Raw material gas outflow hole, 9... Raw material gas supply means. Figure 1 Figure 2 Figure 3

Claims (1)

[Claims] A pair of raw material gas outflow electrodes are arranged facing each other in a vacuum reaction vessel, a substrate for processing is placed in the center between the two raw material gas outflow electrodes, and a pair of raw material gas outflow electrodes is placed on both sides of the substrate from the two raw material gas outflow electrodes. supplying high frequency power between the substrate and both of the raw material gas outflow electrodes while causing the raw material gas to flow toward the
A plasma CV characterized by generating plasma during that time and forming thin films on both sides of the substrate in the plasma.
Thin film forming method according to D.