JPH01103830A - Plasma cvd device - Google Patents

Abstract

PURPOSE:To form films simultaneously on both sides of a substrate by a method wherein material gas is fed from both material gas run out electrodes in plasma to be activated for filming the substrate. CONSTITUTION:Material gas fed from both side material gas feeders 9 together with carrier gas is run out on both sides of a substrate 3 from gas run out holes of both material gas run out electrodes 7. When the substrate 3 is impressed with high-frequency power, plasma is produced in the gaps between the substrate 3 and both side material gas run out electrodes 7; the material gas run out from respective material gas run out electrodes 7 is activated in the plasma; and thin films are simultaneously formed on both sides of the substrates 3. In this case, the substrate 3 shall be impressed with high-frequency power of 13.56 MHz. The high-frequency power is to be electrically matched in a matching box 20 before it is impressed in the substrate 3. Both material gas run out electrodes 7 are symmetrical with respect to the substrate 3 while the flow rate of material gas and the distance to the substrate 3 are equivalent. In such a constitution, the material gas is exhausted from the central lower part so as not to exercise a distorted effect on the plasma.

Description

[Detailed Description of the Invention] [Industrial Field of Application] The present invention is directed to positive v CV D (Chemical V
The present invention relates to a plasma CVD apparatus that forms a thin film on a substrate using a 3D, 3D, 3D, 3D, 3D, 8D, 8D, 8D, 8D, 8D, 3D, 3D, 8D, 8D, 3D, and LD methods.

[Prior Art] As shown in FIG. 7, in a conventional plasma CVD apparatus, a substrate 3 to be processed is placed on a substrate heater 2 in a vacuum reaction vessel 1.
An electrode 4 is placed above the substrate 3 facing the substrate heater 2, and high frequency power is applied from a high frequency power source 5 between the electrode 4 and the substrate heater 2. 1, a raw material gas supply means 6 consisting of a pipe supplies raw material gas, and a thin film is formed on the surface of the substrate 4 by plasma CVD.

[Problems to be Solved by the Invention] However, in such a conventional plasma CVD apparatus, a thin film can only be formed on one side (the upper side) of the substrate 3, so a thin film can be formed on the other side as well. The process of forming the image had to be carried out again, which caused problems with inefficiency.

An object of the present invention is to use a plasma CV method that can simultaneously form a thin film on both sides of a substrate and that can easily set the substrate.
D device.

Means for Solving Problem E] To explain in detail the present invention for achieving the above object, the plasma CVD apparatus of the present invention has one
A pair of raw material gas outlet electrodes are arranged to face each other, a substrate holder electrode is arranged between the two raw material gas outlet electrodes so that a substrate for processing can be placed in the center between the two raw material gas outlet electrodes, and the The substrate holder electrode is supported on a holder stand so that one side thereof is tilted upward and the focal plane is vertical, and both sides of the substrate to be supported are exposed to the substrate holder electrode. a through hole is provided in the substrate holder electrode, a substrate fitting recess into which the outer periphery of the substrate fits is provided on the one surface of the substrate holder electrode, and a substrate fitting recess is provided on the one surface of the substrate holder electrode. A substrate holder that presses only the outer periphery of the substrate fitted to the substrate is supported so as to be openable and closable or detachable, and the source gas is directed to each surface of the substrate from each source gas outlet hole of both of the source gas outlet electrodes. The method is characterized in that a raw material gas supply means is provided so as to cause the raw material gas to flow out.

[Function] With this structure, plasma can be generated on both sides of the substrate by the substrate and the raw material gas outlet electrodes on both sides of the substrate, and the raw material gas from each raw material gas outlet electrode can be directed to both sides of the substrate. can be supplied, and thin films can be formed on both sides of the substrate at the same time. In addition, setting the substrate to the substrate holder electrode is easy without dropping the substrate by setting the substrate in the substrate fitting recess with the substrate holder tilted so that the substrate fitting recess faces diagonally upward. You can now set it to .

[Example] Hereinafter, an example of the present invention will be described in detail with reference to FIGS. 1 to 6. 1 to 5 show an embodiment of the present invention. As shown in the figure, in the plasma CVD apparatus of this embodiment, a pair of raw material gas supply electrodes 7 are arranged vertically facing each other and parallel to each other in the vacuum reaction vessel 1.

Each source gas outflow electrode 7 is made of metal and has a large number of gas outflow holes 8 distributed therein. On the back side of each raw material gas outflow electrode 7, there is a metal funnel-shaped distribution chamber forming body 9A.
and a metal pipe 9B for supplying the raw material gas thereto. The pipe 9B is led out of the vacuum reaction vessel 1 in an airtight manner. The raw material gas outflow electrode 7 is grounded via a raw material gas supply means 9. A substrate 3 for processing is placed in the center between both source gas outflow electrodes 7 and supported by a metal substrate holder electrode 10 . The substrate holder electrode 10 is attached to the holder via a rotation support part 12 so that, by operating a lever 11, one surface 10A of the substrate holder electrode 10 can be tilted diagonally upward and the focal plane 10A can be vertical. It is supported by a stand 13. A through hole 14 is provided in the substrate holder electrode 10 so that both sides of the substrate 3 to be supported are exposed. On one side 10A of the substrate holder electrode 10,
A substrate fitting recess 15 into which the outer periphery of the substrate 3 is fitted is provided concentrically, and a substrate presser 16 which presses only the outer periphery of the substrate 3 fitted and supported in the substrate fitting recess 15 is provided.

For this reason, the substrate holder 16 is provided with a window 16A that exposes the portion of the substrate 3 except for the outer periphery. Such a substrate holder 16 is attached to one surface 10A of the substrate holder electrode 10.
It is fitted into a presser fitting recess 19 provided in the presser fitting recess 19 . Such a substrate holder 16 has a locking protrusion 17.
By locking in the locking hole 18 of the substrate holder electrode 10, it is detachably supported by the substrate holder electrode 10. A matching box 20 is connected to the board 3 from an external high frequency power source 5. Power supply cord 21. Holder stand 1
3. High frequency power is applied via the substrate holder electrode 10. An exhaust pipe 22 for evacuation with a vacuum pump (not shown) is provided at the bottom of the vacuum reaction vessel 1.

Next, a method for forming a thin film according to this embodiment using such a plasma CVD apparatus will be described. The inside of the vacuum reaction vessel 1 is evacuated to 0. Keep it at ITOrr level.

The raw material gas supplied together with the carrier gas from the raw material gas supply means 9 on both sides is made to flow out from the gas outlet holes 8 of both raw material gas outlet electrodes 7 to both sides of the substrate 3 .

When high frequency power is applied to the substrate 3, plasma is generated on the substrate 3.
and the source gas outflow electrodes 7 on both sides thereof, the source gas flowing out from each source gas outflow electrode 7 is activated in the plasma, and thin films are simultaneously formed on both sides of the substrate 3. In this case, the frequency of the high frequency applied to the substrate 3 is 13.5
6 MHz. High frequency power is matched box 2
0 and is applied to the substrate 3 while being electrically matched. Both source gas outflow electrodes 7 are symmetrical with respect to the substrate 3, and the flow rate of the source gas and the distance from the substrate 3 are the same. Exhaust air from the lower center to avoid uneven influence on the plasma.

The film formation is completed by turning off the high frequency power supply 5 after stopping the supply of the raw material gas. The film formation is started by applying high frequency to the substrate 3 and then flowing the raw material gas.

The substrate 3 is held at the same location during film formation. It is preferable that the substrate holder electrode 10 be made as thin as possible to avoid turbulence in the flow of raw material gas in vacuum.

The attachment and detachment of the substrate 3 is performed using the substrate holder electrode 1 as shown in FIG.
This is done after removing the board holder 16 with the board holder 16 tilted. The inclination angle θ of the substrate holder electrode 10 is, for example, about 4 to 15 degrees. If the substrate holder electrode 10 is tilted in this way, even if the substrate holder 16 is removed, the substrate 3 will remain in the substrate fitting recess 1.
5 so it will not fall off. Therefore, the substrate 3 can be easily removed from the substrate holder electrode 10 in this state. Even when installing a new board 3, by keeping the board holder electrode 10 at an angle and fitting the board 3 into the board fitting recess 15 facing diagonally upward, the board 3 will not fall off and its position can be easily adjusted. can be retained. In this state, the substrate holder 6 is attached to the substrate holder electrode 10 to fix the substrate 3.

FIG. 6 shows another example of how the substrate presser 16 is attached to the substrate holder electrode 10.

In this example, the lower part of the substrate holder 16 is rotatably supported by the substrate holder electrode 1o by a hinge part 23, and the upper part is supported by the substrate holder electrode 10 by a locking protrusion 17.

Experimental Example Two substrates each having a diameter of 8.89α (3.5″) were set, and a film was formed by plasma CVD under the following conditions.

Vacuum degree: 1O-1Torr Fu7XV: 13.56 MHz x 150
W (high frequency applied between the substrate and raw material gas outlet electrode) Vacuum reaction vessel Stainless steel raw material gas outlet electrode: Provided with many gas outlet holes, from which raw material gas is discharged into plasma Thickness of substrate holder electrode: 2# Substrate thickness: 1.35° Film forming time: 1 minute 9 One substrate attachment/detachment tilt angle = 10° [Effects of the invention] As explained above, in the plasma CVD apparatus according to the present invention, a pair of source gas outflow electrodes A substrate is placed between them, high frequency power is applied between the substrate and both source gas outflow electrodes to generate plasma on both sides of the substrate, and source gas is supplied into these plasmas from both source gas outflow electrodes. Since the substrate is activated and the substrate is thereby formed with a film, the film can be formed on both sides of the substrate at the same time.

Therefore, according to the present invention, film formation by plasma CVD can be performed efficiently. In addition, in the present invention, the substrate holder electrode can be tilted so that the substrate fitting recess provided on one surface thereof is oriented diagonally upward, so that the substrate cannot be dropped from the substrate holder electrode when attaching or detaching the substrate. This has the advantage that it can be easily done without any problems.

[Brief explanation of the drawing]

FIG. 1 is a vertical cross-sectional view showing an embodiment of the plasma CVD apparatus according to the present invention, and FIG.
- Figure 3 is an electrical system diagram of the device shown in Figure 1; Figures 4 and 5 are front views of the substrate holder electrode and substrate holding part used in this example; Fig. 6 is a longitudinal sectional view showing another example of the substrate holder electrode and the substrate holding part, and Fig. 7 is a conventional plasma C
FIG. 3 is a vertical cross-sectional view of the VD device. DESCRIPTION OF SYMBOLS 1... Vacuum reaction vessel, 3... Substrate, 5... High frequency power supply, 7... Raw material gas outflow electrode, 8... Raw material gas outflow hole, 9... Raw material gas supply means, 10. ... Substrate holder electrode, 10A... One side, 12... Rotation support part, 13... Holder stand, 14... Through hole, 15...
... Board fitting recess, 16... Board holder, 17... Locking protrusion, 18... Locking hole, 22... Exhaust pipe. Figure 5 Figure 6 1ρ

Claims (1)

[Claims] A pair of raw material gas outflow electrodes are arranged facing each other in a vacuum reaction vessel, and a substrate holder is provided between the two raw material gas outflow electrodes so that a substrate for processing can be placed in the center between the two raw material gas outflow electrodes. electrodes are disposed, and the substrate holder electrode is supported on a holder base so that one surface thereof is tilted upward and the other surface is vertical;
The substrate holder electrode is provided with a through hole so that both sides of the substrate to be supported are exposed, and the one surface of the substrate holder electrode is provided with a substrate fitting recess into which the outer periphery of the substrate is fitted. , and a substrate holder that presses only the outer periphery of the substrate fitted in the substrate fitting recess is supported on one surface of the substrate holder electrode so as to be openable/closable or detachable, and these electrodes are attached to both of the raw material gas outflow electrodes. A plasma CVD apparatus characterized in that a source gas supply means is provided to cause the source gas to flow out from each source gas outflow hole toward each surface of the substrate.