JPH07118461B2 - Plasma CVD equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention is plasma CVD (Chemical Vapor Deposition).
The present invention relates to a plasma CVD apparatus for forming a thin film on a substrate by a method.

[Prior Art] In a conventional plasma CVD apparatus, as shown in FIG. 7, a substrate 3 to be processed is laid down on a substrate heater 2 in a vacuum reaction container 1, and a substrate heater is provided above the substrate 3. 2, an electrode 4 is installed facing the electrode 2, a high frequency power is applied from a high frequency power source 5 between the electrode 4 and the substrate heater 2, and a raw material gas supply means 6 composed of a pipe is used in the vacuum reaction container 1 to feed the raw material. It was a manufacturing in which a gas was supplied and a thin film was formed on the surface of the substrate 4 by the plasma CVD method.

[Problems to be Solved by the Invention] However, in such a conventional plasma CVD apparatus, since a thin film can be formed only on one surface (upper surface) of the substrate 3, a thin film is formed on the other surface. I had to do the work to do it again, and there was a problem of inefficiency.

An object of the present invention is plasma CVD capable of simultaneously forming thin films on both sides of a substrate and easily setting the substrate.
To provide a device.

[Means for Solving Problems] The structure of the present invention for achieving the above-mentioned object will be described.
A pair of source gas outflow electrodes are arranged to face each other, and a substrate holder electrode is disposed between the source gas outflow electrodes so that a substrate for processing can be placed in the center between the source gas outflow electrodes. The substrate holder electrode is supported by the holder base so that one surface of the substrate holder electrode can be inclined upward and the surface can be vertical, and both surfaces of the substrate to be supported are exposed to the substrate holder electrode. A through hole is provided in the substrate holder electrode, a substrate fitting recess for fitting the outer periphery of the substrate is provided on the one surface of the substrate holder electrode, and the substrate fitting recess is provided on one surface of the substrate holder electrode. A substrate retainer that presses only the outer periphery of the substrate fitted to is supported openably or detachably, and the source gas outflow electrodes of both the source gas outflow holes of these electrodes supply the source gas to each surface of the substrate. Characterized in that only the raw material gas supply means so as to flow out is provided.

[Operation] With such a structure, plasma can be generated on both sides of the substrate by the substrate and each source gas outflow electrode on both sides thereof, and the source gas from each source gas outflow electrode is delivered to both sides of the substrate. It can be supplied and a thin film can be simultaneously formed on both sides of the substrate. Also, setting the substrate on the substrate holder electrode is easy without dropping the substrate by setting the substrate in the substrate fitting recess with the substrate holder tilted so that the substrate fitting recess is diagonally upward. Can be set to.

[Embodiment] An embodiment of the present invention will be described in detail below with reference to FIGS. 1 to 6. 1 to 5 show an embodiment of the present invention. As shown, the plasma of this embodiment
In the CVD apparatus, a pair of source gas supply electrodes 74 are arranged vertically and face each other in the vacuum reaction container 1 in parallel with each other. Each source gas outflow electrode 7 is made of metal and has a large number of gas outflow holes 8 dispersed therein. On the back surface of each source gas outflow electrode 7, there is provided a source gas supply means 9 comprising a funnel-shaped distribution chamber forming body 9A made of metal and a metal pipe 9B for supplying the source gas to this. .
The pipe 9B is led out of the vacuum reactor 1 in an airtight manner. The source gas outflow electrode 7 is grounded via the source gas supply means 9. At the center between the two source gas outflow electrodes 7, a processing substrate 3 is placed supported by a metal substrate holder electrode 10. The substrate holder electrode 10 is held via the rotation support portion 12 so that one surface 10A of the substrate holder electrode 10 can be tilted upward and the surface 10A can be vertical by operating the lever 11. It is supported by table 13. Through holes 14 are provided in the substrate holder electrode 10 so that both surfaces of the substrate 3 to be supported are exposed. On one surface 10A of the substrate holder electrode 10, a substrate fitting recess 15 for fitting the outer periphery of the substrate 3 is concentrically provided, and only the outer periphery of the substrate 3 fitted and supported in the substrate fitting recess 15 is supported. A substrate retainer 16 is provided for retaining. Therefore, the board retainer 16
A window 16A for exposing a portion of the substrate 3 excluding the outer periphery is provided. Such a substrate retainer 16 is a substrate holder electrode.
It is adapted to be fitted in a press-fitting recess 19 provided on one surface 10A of the plate 10. The substrate retainer 16 is detachably supported on the substrate holder electrode 10 by engaging the engaging protrusion 17 with the engaging hole 18 of the substrate holder electrode 10. On the board 3, from the external high frequency power source 5, the matching box 20, the feeding cord 21, the holder stand 13,
High frequency power is applied via the substrate holder electrode 10. An exhaust pipe 22 for evacuating with a vacuum pump (not shown) is provided below the vacuum reaction container 1.

Next, a thin film forming method of this embodiment performed using such a plasma CVD apparatus will be described. The inside of the vacuum reaction vessel 1 is evacuated and kept at about 0.1 Torr. The raw material gas supplied together with the carrier gas from the raw material gas supply means 9 on both sides is caused to flow from the gas outflow holes 8 of both the raw material gas outflow electrodes 7 to both sides of the substrate 3. When high-frequency power is applied to the substrate 3, plasma is generated between the substrate 3 and the source gas outflow electrodes 7 on both sides of the substrate 3, and the source gas flowing out from each source gas outflow electrode 7 is activated in the plasma. A thin film is simultaneously formed on both surfaces of No. 3. In this case, the high frequency applied to the substrate 3 is 13.56 MHz. The high frequency power is electrically matched by the matching box 20 and applied to the substrate 3. Both source gas outflow electrodes 7 are symmetrical with respect to the substrate 3, and the flow rate of the source gas and the distance from the substrate 3 are the same. Evacuation is performed from the lower center so that there is no uneven influence in the plasma.

The film formation is ended by turning off the high frequency power supply 5 after stopping the supply of the raw material gas. The film formation is started by applying a high frequency to the substrate 3 and then flowing a source gas.

The substrate 3 is held in the same place during film formation. It is preferable to make the substrate holder electrode 10 as thin as possible so that the flow of the source gas in a vacuum does not become disturbed.

As shown in FIG. 1, the substrate holder electrode 10 is attached to and detached from the substrate 3.
Is performed at an angle and the substrate retainer 16 is removed. The inclination angle θ of the substrate holder electrode 10 is, for example, about 4 to 15 °. When the substrate holder electrode 10 is thus inclined, the substrate 3 does not drop even if the substrate retainer 16 is removed because the substrate 3 is fitted in the substrate fitting recess 15. Therefore, in this state, the substrate 3 can be easily removed from the substrate holder electrode 10. Even when a new substrate 3 is mounted, the substrate holder electrode 10 is inclined so that the substrate fitting concave portion 15 is inclined upward.
By fitting the substrate 3 on the substrate 3, the substrate 3 can be easily held in its posture without slipping off. In this state, the substrate retainer 6 is attached to the substrate holder electrode 10 to fix the substrate 3.

FIG. 6 shows another example of how to attach the substrate retainer 16 to the substrate holder electrode 10. In this example, the lower portion of the substrate holder 16 is rotatably supported by the substrate holder electrode 10 by the hinge portion 23, and the upper portion thereof is supported by the locking protrusion 17.
It was designed to be supported by 10.

Experimental Example Two substrates having a diameter of 8.89 cm (3.5 ″) were set, and a film was formed by the plasma CVD method under the following conditions.

Degree of vacuum: 10 ^-1 Torr Plasma: 13.56MHz × 150W (high frequency was applied between the substrate and the source gas outflow electrode) Vacuum reaction vessel: Stainless steel Source gas outflow electrode: Many gas outflow holes Gas is released into plasma Thickness of substrate holder electrode: 2 mm Substrate thickness: 1.35 mm Film formation time: 1 minute Substrate attachment / detachment angle: 10 ° [Effect of the invention] As described above, the plasma CVD apparatus according to the present invention A substrate is placed between a pair of source gas outflow electrodes, and high-frequency power is applied between the substrate and both source gas outflow electrodes to generate plasma on both sides of the substrate. The raw material gas is supplied from the outflow electrode to activate the raw material gas, and thus the film is formed on the substrate. Therefore, it is possible to simultaneously form the film on both surfaces of the substrate.
Therefore, according to the present invention, film formation by the plasma CVD method can be performed efficiently. Further, in the present invention, since the substrate holder electrode can be tilted so that the substrate fitting concave portion provided on one surface of the substrate holder electrode is obliquely upward, the substrate holder electrode is dropped from the substrate holder electrode when the substrate is attached or detached. There is an advantage that it can be done easily without it.

[Brief description of drawings]

FIG. 1 is a longitudinal sectional view showing an embodiment of a plasma CVD apparatus according to the present invention, FIG. 2 is a front view of a source gas outflow electrode used in FIG. 1, and FIG. 3 is an apparatus shown in FIG. FIG. 4 and FIG. 5 are electrical system diagrams of FIG. 6 are a front view and a longitudinal sectional view of a substrate holder electrode and a substrate holding portion used in this embodiment, and FIG.
FIG. 7 is a vertical sectional view showing another example of the substrate holder electrode and the substrate holding portion, and FIG. 7 is a vertical sectional view of a conventional plasma CVD apparatus. 1 ... Vacuum reactor, 3 ... Substrate, 5 ... High frequency power supply,
7 ... Raw material gas outflow electrode, 8 ... Raw material gas outflow hole, 9 ...
… Source gas supply means, 10 …… Substrate holder electrode, 10A…
… One side, 12 …… Rotary support, 13 …… Holder stand, 14
...... Through hole, 15 ...... Board fitting recess, 16 ...... Board holder, 17
...... Locking protrusion, 18 ...... Locking hole, 22 ...... Exhaust pipe.

Claims (1)

[Claims] 1. A pair of source gas outflow electrodes are arranged in a vacuum reaction vessel so as to face each other, and the source gas outflows so that a processing substrate can be placed in the center between the source gas outflow electrodes. A substrate holder electrode is arranged between the electrodes, and the substrate holder electrode is supported by a holder stand so that one surface of the substrate holder electrode can be inclined upward and the surface can be vertical. A through hole is provided so that both sides of the substrate to be supported are exposed, a substrate fitting recess for fitting the outer periphery of the substrate is provided on the one surface of the substrate holder electrode, and the substrate holder electrode A substrate retainer that presses only the outer periphery of the substrate fitted in the substrate fitting recess is openably or detachably supported on one surface, and the source gas outlet holes of these electrodes are provided in both source gas outlet electrodes. Plasma CVD apparatus characterized by the raw material gas supply means is provided so as to Luo material gas is caused to flow out towards each side of the substrate.