JPH01130459A - Secondary electron sensor - Google Patents
Secondary electron sensorInfo
- Publication number
- JPH01130459A JPH01130459A JP62289082A JP28908287A JPH01130459A JP H01130459 A JPH01130459 A JP H01130459A JP 62289082 A JP62289082 A JP 62289082A JP 28908287 A JP28908287 A JP 28908287A JP H01130459 A JPH01130459 A JP H01130459A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- sample
- specimen
- secondary electron
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 229910001285 shape-memory alloy Inorganic materials 0.000 claims abstract description 10
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、試料に荷電粒子ビームを照射して試料から放
出される２次電子を検出する２次電子検出器に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a secondary electron detector that detects secondary electrons emitted from a sample by irradiating the sample with a charged particle beam.
第３図は走査電子顕微鏡の２次電子検出部を示す図であ
り、２Ｉば対物レンズポールピース、２２はライトパイ
プ、２３はコロナリング、２４は蛍光面、２５はコレク
タ、２６．２６′は試料を示す。FIG. 3 is a diagram showing the secondary electron detection section of a scanning electron microscope, where 2I is an objective lens pole piece, 22 is a light pipe, 23 is a corona ring, 24 is a fluorescent screen, 25 is a collector, and 26 and 26' are Show the sample.
走査電子顕微鏡では、第３図に示すように対物レンズポ
ールピース２１を通して電子ビームを試料２６．２６′
に照射し、この電子ビーム照射によって試料２６．２６
′から放出される２次電子をコレクタ２５によって集め
、ライトパイプ２２の先に当てるようにしている。２次
電子が当たるライトパイプ２２の先は蛍光面２４になっ
ており、その周囲に例えば＋１０ｋＶの電圧が印加され
たコロナリング２３が配置されている。試料観察では、
試料２６．２６′をＸ、Ｙ、Ｚの方向へ移動させたり、
さらには傾斜させたり、回転させたりする操作がある。In a scanning electron microscope, as shown in FIG.
The sample 26.26 is irradiated by this electron beam irradiation.
The secondary electrons emitted from ' are collected by a collector 25 and applied to the tip of the light pipe 22. The tip of the light pipe 22, which is hit by the secondary electrons, is a fluorescent screen 24, around which a corona ring 23 to which a voltage of, for example, +10 kV is applied is arranged. In sample observation,
Move the sample 26.26' in the X, Y, and Z directions,
Furthermore, there are operations such as tilting and rotating.
Ｚ方向の上下移動では、試料２６の位置から試料２６′
の位置までのストロークがあるとすると、対物レンズポ
ールピース２１の先端から例えばＷ Ｄ （Ｗｏｒｋ
Ｄ １ｓｔａｎｃｅ） ８ ｍ ｍ 〜４８ｍｍ程度の
ストローク範囲となる。In the vertical movement in the Z direction, from the position of the sample 26 to the sample 26'
For example, if there is a stroke from the tip of the objective lens pole piece 21 to the position W D (Work
D 1stance) The stroke range is approximately 8 mm to 48 mm.
ところが、現在使用されている従来の２次電子検出器は
機構的に固定されているため、上記の如く試料を移動さ
せると、２次電子の集光効率が微妙に変化するという問
題がある。例えばＷＤ８ｍｍの位置において集光効率を
良くするとＷＤ４８ｍｍの位置での集光効率が悪くなり
、逆にＷＤ４３ｍｍの位置での集光効率を良くするとＷ
Ｄ８ｍｍの位置での集光効率が悪くなる。そのため従来
の２次電子検出器では、適当な位置で妥協するはかなく
、いずれの位置にあっても安定した検出精度を得ること
は難しかった。However, since the conventional secondary electron detectors currently in use are mechanically fixed, there is a problem in that when the sample is moved as described above, the secondary electron collection efficiency changes slightly. For example, if you improve the light collection efficiency at the WD 8mm position, the light collection efficiency will decrease at the WD 48mm position, and conversely, if you improve the light collection efficiency at the WD 43mm position, the W
The light collection efficiency becomes worse at the D8mm position. Therefore, with conventional secondary electron detectors, it is difficult to compromise on an appropriate position, and it is difficult to obtain stable detection accuracy regardless of the position.
本発明は、上記の問題点を解決するものであって、試料
が移動しても常に最適な位置にコレクタを設定すること
ができ、検出精度の安定化を図ることができる２次電子
検出器を提供することを目的とするものである。The present invention solves the above problems, and is a secondary electron detector that can always set the collector at an optimal position even when the sample moves, and can stabilize detection accuracy. The purpose is to provide the following.
そのために本発明の２次電子検出器は、試料に荷電粒子
ビームを照射して試料から放出される２次電子を検出す
る２次電子検出器において、２次電子を集光するコレク
タに形状記憶合金を用いると共にコレクタに加熱手段を
備え、試料の位置を検出してコレクタの加熱温度を制御
するように構成したことを特徴とするものである。To this end, the secondary electron detector of the present invention detects secondary electrons emitted from the sample by irradiating the sample with a charged particle beam. The present invention is characterized in that it uses an alloy, has a heating means in the collector, and is configured to detect the position of the sample and control the heating temperature of the collector.
本発明の２次電子検出器では、コレクタに形状記憶合金
を用い、試料を移動すると、その位置を検出してコレク
タの加熱温度を制御するので、試料の位置に追従して形
状記憶合金からなるコレクタを変形させることができ、
コレクタによる集光効率を試料の位置に関係なく最適の
形状にすることができる。In the secondary electron detector of the present invention, a shape memory alloy is used for the collector, and when the sample is moved, the position is detected and the heating temperature of the collector is controlled, so it follows the position of the sample and is made of a shape memory alloy. The collector can be transformed,
The light collection efficiency of the collector can be optimized regardless of the position of the sample.
以下、図面を参照しつつ実施例を説明する。 Examples will be described below with reference to the drawings.
第１図は本発明に係る走査電子顕微鏡の２次電子検出器
の１実施例を示す図、第２図は試料の位置に応じた２次
電子検出器の制御例を示す図である。図中、１は本体、
２は試料、３は２次電子検出器、４は試料移動機構、５
は位置検出回路、６はヒータ制御回路、７はヒータ、８
はポールピース、９はライトパイプ、１０はコロナリン
グ、１１は蛍光面、１２はコレクタを示す。FIG. 1 is a diagram showing one embodiment of a secondary electron detector of a scanning electron microscope according to the present invention, and FIG. 2 is a diagram showing an example of controlling the secondary electron detector according to the position of a sample. In the figure, 1 is the main body,
2 is a sample, 3 is a secondary electron detector, 4 is a sample moving mechanism, 5
is a position detection circuit, 6 is a heater control circuit, 7 is a heater, 8
1 is a pole piece, 9 is a light pipe, 10 is a corona ring, 11 is a fluorescent screen, and 12 is a collector.
第１図において、２次電子検出器３は、コレクタに形状
記憶合金を使用したのであり、この形状記憶合金よりな
るコレクタを加熱するものがヒータ７である。位置検出
回路５は、試料移動機構４により移動する試料２の位置
を検出するものであり、ヒータ制御回路６は、例えば試
料位置に対応する加熱温度のテーブルを備え、位置検出
回路５によって検出された試料２の位置信号からヒータ
７の加熱温度を決定し、ヒータ７の加熱温度を制御する
ものである。In FIG. 1, the secondary electron detector 3 uses a shape memory alloy for its collector, and a heater 7 heats the collector made of the shape memory alloy. The position detection circuit 5 detects the position of the sample 2 moved by the sample moving mechanism 4, and the heater control circuit 6 includes, for example, a table of heating temperatures corresponding to the sample position, and detects the position of the sample 2 that is detected by the position detection circuit 5. The heating temperature of the heater 7 is determined from the position signal of the sample 2, and the heating temperature of the heater 7 is controlled.
上記の如き構成により、図示しないが試料移動制御手段
によって試料移動機構４が制御され、試料２が移動する
と、まず、その試料２の位置を位置検出回路５によって
検出する。そうする゛と、この位置信号がヒータ制御回
路６に送られてヒータ７の加熱温度が決定され、ヒータ
７の加熱温度が制御される。このようにヒータ７の加熱
温度を制御して２次電子の集光効率が安定化するように
形状記憶合金製のコレクタを変形させた２次電子検出器
の様子を示したのが第２図である。With the above configuration, the sample movement mechanism 4 is controlled by a sample movement control means (not shown), and when the sample 2 is moved, the position of the sample 2 is first detected by the position detection circuit 5. Then, this position signal is sent to the heater control circuit 6, the heating temperature of the heater 7 is determined, and the heating temperature of the heater 7 is controlled. Figure 2 shows a secondary electron detector in which the collector made of a shape memory alloy is deformed so that the heating temperature of the heater 7 is controlled to stabilize the secondary electron collection efficiency. It is.
２次電子検出器は、第２図に示すようにコレクタ１２を
ヒータ７により加熱するように構成し、試料２の位置の
変化に追従してヒータ７による加熱温度を制御してコレ
クタ１２を変形させる。このコレクタ１２を構成する形
状記憶合金には、例えば約４０〜５０℃程度の常温より
やや高めの範囲で変形するものが用いられる。そして、
コレクタ１２との距離が遠くなり集光口からずれた方向
に試料２が移動すると、ヒータ７の加熱温度を制御する
ことによって同図（ａｌから（ｂｌに示すように試料２
の移動する方向にコレクタ１２の長さ、曲がり形状等を
変形させる。The secondary electron detector is configured so that the collector 12 is heated by a heater 7, as shown in FIG. let The shape memory alloy forming the collector 12 is one that deforms at a temperature slightly higher than normal temperature, for example about 40 to 50°C. and,
When the distance from the collector 12 increases and the sample 2 moves in a direction away from the condensing port, the heating temperature of the heater 7 is controlled to move the sample 2 from the same figure (al to (bl)).
The length, bending shape, etc. of the collector 12 are changed in the direction in which the collector 12 moves.
なお、本発明は、上記の実施例に限定されるものではな
（、種々の変形が可能である。例えば上記の実施例では
、コレクタの曲がり形状を変化させるようにしたがコレ
クタの集光口の形状を変化させるようにしてもよいし、
コレクタの傾きを変化させるようにしてもよい。また、
試料のＺ軸方向の移動だけでなく、傾斜や試料の大きさ
等にも追従して常に最適な２次電子集光効率が得られる
ようにヒータの加熱温度を設定してもよい。さらには、
コレクタに例えばＯ〜＋５００Ｖの電圧を印加し、その
電圧を位置検出信号により変化させるようにしてもよい
。Note that the present invention is not limited to the above-mentioned embodiment (and various modifications are possible. For example, in the above embodiment, the curved shape of the collector is changed, You may change the shape of the
The inclination of the collector may be changed. Also,
The heating temperature of the heater may be set so as to follow not only the movement of the sample in the Z-axis direction but also the inclination, the size of the sample, etc. so that the optimum secondary electron collection efficiency can always be obtained. Furthermore,
For example, a voltage of 0 to +500 V may be applied to the collector, and the voltage may be changed by the position detection signal.
以上の説明から明らかなように、本発明によれば、試料
の位置を検出し、その位置信号によってコレクタの形状
、姿勢を制御するので、試料を移動しても常に最高の集
光効率を得ることができる。As is clear from the above explanation, according to the present invention, the position of the sample is detected and the shape and posture of the collector are controlled based on the position signal, so that the highest light collection efficiency is always obtained even when the sample is moved. be able to.
従って、２次電子の検出精度を安定化させることができ
、Ｓ／Ｎの良い分析画像を得ることができる。Therefore, the detection accuracy of secondary electrons can be stabilized, and an analysis image with a good S/N ratio can be obtained.
第１図は本発明に係る走査電子顕微鏡の２次電子検出器
の１実施例を示す図、第２図は試料の位置に応じた２次
電子検出器の制御例を示す図、第３図は走査電子顕微鏡
の２次検出部を示す図である。
１・・・本体、２・・・試料、３・・・２次電子検出器
、４・・・試料移動機構、５・・・位置検出回路、６・
・・ヒータ制御回路、７・・・ヒータ、８・・・ポール
ピース、９・・・ライトパイプ、１０・・・コロナリン
グ、１１・・・蛍光面、１２・・・コレクタ。FIG. 1 is a diagram showing one embodiment of a secondary electron detector of a scanning electron microscope according to the present invention, FIG. 2 is a diagram showing an example of controlling the secondary electron detector according to the position of a sample, and FIG. FIG. 2 is a diagram showing a secondary detection section of a scanning electron microscope. DESCRIPTION OF SYMBOLS 1... Main body, 2... Sample, 3... Secondary electron detector, 4... Sample moving mechanism, 5... Position detection circuit, 6...
... Heater control circuit, 7... Heater, 8... Pole piece, 9... Light pipe, 10... Corona ring, 11... Fluorescent screen, 12... Collector.
Claims (2)
れる２次電子を検出する２次電子検出器において、２次
電子を集光するコレクタに形状記憶合金を用いると共に
コレクタに加熱手段を備え、試料の位置を検出してコレ
クタの加熱温度を制御するように構成したことを特徴と
する２次電子検出器。(1) In a secondary electron detector that detects secondary electrons emitted from a sample by irradiating the sample with a charged particle beam, a shape memory alloy is used for the collector that collects the secondary electrons, and a heating means is attached to the collector. What is claimed is: 1. A secondary electron detector comprising: a secondary electron detector configured to detect the position of a sample and control the heating temperature of a collector.
出してコレクタの加熱温度及び印加電圧を制御すること
を特徴とする特許請求の範囲第１項記載の２次電子検出
器。(2) A secondary electron detector according to claim 1, characterized in that the collector is provided with a voltage applying means, and the position of the sample is detected to control the heating temperature and applied voltage of the collector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62289082A JPH0616401B2 (en) | 1987-11-16 | 1987-11-16 | Secondary electron detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62289082A JPH0616401B2 (en) | 1987-11-16 | 1987-11-16 | Secondary electron detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01130459A true JPH01130459A (en) | 1989-05-23 |
| JPH0616401B2 JPH0616401B2 (en) | 1994-03-02 |
Family
ID=17738590
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62289082A Expired - Lifetime JPH0616401B2 (en) | 1987-11-16 | 1987-11-16 | Secondary electron detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0616401B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009205891A (en) * | 2008-02-27 | 2009-09-10 | Jeol Ltd | Secondary electron-reflected electron detecting device, and scanning electron microscope having secondary electron-reflected electron detecting device |
-
1987
- 1987-11-16 JP JP62289082A patent/JPH0616401B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009205891A (en) * | 2008-02-27 | 2009-09-10 | Jeol Ltd | Secondary electron-reflected electron detecting device, and scanning electron microscope having secondary electron-reflected electron detecting device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0616401B2 (en) | 1994-03-02 |
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