JPH01130421A - Superconductive wiring - Google Patents
Superconductive wiringInfo
- Publication number
- JPH01130421A JPH01130421A JP62288754A JP28875487A JPH01130421A JP H01130421 A JPH01130421 A JP H01130421A JP 62288754 A JP62288754 A JP 62288754A JP 28875487 A JP28875487 A JP 28875487A JP H01130421 A JPH01130421 A JP H01130421A
- Authority
- JP
- Japan
- Prior art keywords
- superconducting
- wiring
- superconductive
- wire
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010410 layer Substances 0.000 claims abstract description 24
- 239000011247 coating layer Substances 0.000 claims abstract description 15
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000004020 conductor Substances 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 29
- 239000000463 material Substances 0.000 description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 9
- 239000000758 substrate Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 8
- 229910052697 platinum Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は超伝導材料を用いた配線に関するものであり、
特に複数の配線を近接させて設置した場合にも高い密度
の電流を超伝導状態で流すことが可能な配線に関する。[Detailed Description of the Invention] Industrial Application Field The present invention relates to wiring using superconducting materials,
In particular, the present invention relates to wiring that allows a high-density current to flow in a superconducting state even when a plurality of wirings are installed close to each other.
従来の技術
超伝導材料を配線として使用する場合、従来は、東に線
状に加工した超伝導材料をそのまま使用するか、もしく
はそれを常伝導材料で覆った構造で使用することが通例
であった。Conventional technology When using a superconducting material as a wiring, it was customary to use the superconducting material processed into a linear shape as is, or to cover it with a normal conductive material. Ta.
第５図は従来の超伝導配線を示す断面図である。FIG. 5 is a sectional view showing a conventional superconducting wiring.
５は゛ト導体基板、６は絶縁膜、７は下地膜、１７は超
伝導配線である。この場合には超伝導被覆層による磁場
の遮断が行なわれないため、隣接した配線を流れる電流
によって発生した磁場が超伝導線の臨界電流を減少させ
、超伝導状態で流すことができる電流の密度が減少する
。5 is a conductor substrate, 6 is an insulating film, 7 is a base film, and 17 is a superconducting wiring. In this case, since the magnetic field is not blocked by the superconducting coating layer, the magnetic field generated by the current flowing in the adjacent wire reduces the critical current of the superconducting wire, and the density of the current that can be passed in the superconducting state decreases.
発明が解決しようとする問題点
複数の超伝導配線を近接させて設置し高い密度の電流を
流した場合、配線を構成する超伝導材料の臨界電流が、
隣接した超伝導配線を流れる電流が作る磁場の影響によ
って減少し、−木の配線を孤立した状態で使用した場合
に比較して超伝導状態で流すことが可能な最大電流密度
が減少する。Problems to be Solved by the Invention When multiple superconducting wires are installed close to each other and a high density current is passed through them, the critical current of the superconducting material that makes up the wires is
The maximum current density that can be passed in the superconducting state is reduced by the influence of the magnetic field created by the current flowing in adjacent superconducting wires, compared to when wooden wires are used in isolation.
本発明者は以−Ｌのような従来の金属薄膜配線の製造方
法の諸欠点に鑑みて種々考案研究した結果、本発明を完
成するに至ったものである。The present inventor has completed the present invention as a result of various ideas and researches in view of the various drawbacks of the conventional manufacturing method of metal thin film wiring as described below.
問題点を解決するための手段
本発明の超伝導配線は超伝導材料の線と、その表面全体
かもしくは一部を被覆する中間層と、さらにその表面全
体かもしくは一部を被覆する超伝導材料の被覆層からな
り、かつ超伝導線および超伝導被覆層が超伝導状態にあ
り、中間層が常伝導状態にある温度で使用される。Means for Solving the Problems The superconducting wiring of the present invention comprises a wire made of a superconducting material, an intermediate layer covering the entire surface or a portion of the wire, and a superconducting material covering the entire surface or a portion of the wire. and is used at a temperature at which the superconducting wire and the superconducting covering layer are in a superconducting state and the intermediate layer is in a normal conducting state.
作用
超伝導線および超伝導被覆層が超伝導状態にあり、中間
層が常伝導状態にある温度で使用されるため、超伝導線
に電流を流した場合にも超伝導被覆層には電流は流れ込
まず、臨界磁場は低下しない。従って超伝導線を流れる
電流によって発生ずる磁場は、１恒伝導線を完全にかも
しくは少なくとも部分的に被覆した超伝導被覆層によっ
て、完全にかもしくは少なくとも部分的に遮断される。Function The superconducting wire and the superconducting coating layer are in a superconducting state and the intermediate layer is in a normal conducting state, so even if a current is passed through the superconducting wire, no current will flow through the superconducting coating layer. There is no flow and the critical magnetic field does not drop. The magnetic field generated by the current flowing through the superconducting wire is therefore completely or at least partially blocked by the superconducting coating layer that completely or at least partially covers the constant conducting wire.
このため複数の超伝導配線を近接して配置した状態て使
用した場合にも、孤立した状態で場合に比較して超伝導
線の臨界電流の低下がまったく生じないかもしくは少な
くとも軽減され、超伝導状態で流すことができる電流密
度の減少がまったく生じないかもしくは少なくとも軽減
される。Therefore, even when multiple superconducting wires are used in close proximity, the decrease in the critical current of the superconducting wires does not occur at all, or at least is reduced, compared to when they are isolated. There is no reduction in the current density that can be passed in the state, or at least it is reduced.
実施例
以下図面に基すいて本発明について史に；Ｙしく説明す
る。EXAMPLES The present invention will be explained in detail below with reference to the drawings.
（実施例 １）
第１図は本発明にかかる超伝導配線の１例を示す断面図
である。本例では第１超伝、導配線ｌおよび第２超伝導
配線２を近接して設置した場合を示しており、そのそれ
ぞれの配線は超伝導線（Ｉａおよび２ａ）が常伝導材料
である中間！（ｌｂおよび２ｂ）および超伝導被覆層（
ｌｃおよび２ｃ）によって被覆され、さらに配線として
の機械的強度を保持するために常伝導材料からなるから
なるシース（ｌｄおよび２ｄ）によって被覆された構造
を持っている。このため例えは第２超伝導配線２の超伝
導線２ａに電流を流した場合に発生する磁場は超伝導被
覆層２ｃによって遮断され第１超伝導配線２の表面に達
しない。従って第２随伝導配線２に大電流を流した場合
にも超伝導線１ａの臨界電流密度が減少することはなく
、第１超伝導配線１には１本の配線を独立して設置した
場合と同一の高い密度の電流を超伝導状態で流すことが
可能である。また第２超伝導配線２を流れる電流かざら
に大きくなり第２超伝導配線の超伝導被覆ｒ’：’ｊ２
ｃの、みではそれが発生する磁気を遮断することが出来
なくなった場合にもさらに第１超伝導配線１の超伝導被
覆Ｎｌｃによって遮断されろため、超伝導線１ａの臨界
電流密度が減少することはない。(Example 1) FIG. 1 is a sectional view showing an example of a superconducting wiring according to the present invention. This example shows a case where the first superconducting wire 1 and the second superconducting wire 2 are installed in close proximity, and each of the wires is an intermediate layer in which the superconducting wires (Ia and 2a) are made of normal conductive material. ! (lb and 2b) and superconducting coating layer (
lc and 2c), and further covered with a sheath (ld and 2d) made of a normal conductive material to maintain the mechanical strength of the wiring. For this reason, for example, a magnetic field generated when a current is passed through the superconducting wire 2a of the second superconducting wire 2 is blocked by the superconducting coating layer 2c and does not reach the surface of the first superconducting wire 2. Therefore, the critical current density of the superconducting wire 1a does not decrease even when a large current is passed through the second superconducting wire 2, and when one wire is installed independently in the first superconducting wire 1. It is possible to flow a current with the same high density as in the superconducting state. In addition, the current flowing through the second superconducting wiring 2 becomes larger and the superconducting coating r':'j2 of the second superconducting wiring
Even if it is no longer possible to block the generated magnetism, the critical current density of the superconducting wire 1a decreases because it is further blocked by the superconducting coating Nlc of the first superconducting wire 1. Never.
超伝導ｖＡｌ ａ、２ａおよび超伝導被覆Ｆｉｌｅ、２
ｃとしてはたとえばＮｂ１Ｇｅの様な金属超伝導材料や
Ｙ−Ｂａ−Ｃｕ−０系セラミツクの様な酸化物超伝導材
料などが使用される。ただし超伝導線と超伝導被覆層と
は必ずしも同一の材料を使用して作製した物である必要
はなく、またその各々が少なくとも１種類の超伝導材料
を含む複数の材料を紺み合わせた構造を持つものであっ
てもかまわない。一方中間層ｔｂ、２ｂおよびシースｌ
ｄ、２ｄには銅、銀、白金等の常伝導金属材料が使用さ
れることが多いが、配線を使用する温度において常伝導
となる他の材料を使用することも、配線を使用する温度
において常伝導となる材料を少なくとも一種類含む１Ｍ
￥Ａの材わ［を紺み合わせた構造を持つものであっても
かまわない。Superconducting vAl a, 2a and superconducting coating File, 2
For example, a metal superconducting material such as Nb1Ge or an oxide superconducting material such as Y-Ba-Cu-0 ceramic is used as c. However, the superconducting wire and the superconducting coating layer do not necessarily need to be made using the same material, and each has a structure made of multiple materials containing at least one type of superconducting material. It doesn't matter if it has. while the middle layer tb, 2b and the sheath l
Normally conductive metal materials such as copper, silver, and platinum are often used for d and 2d, but other materials that are normally conductive at the temperature at which the wiring is used may also be used. 1M containing at least one type of material that is normally conductive
It does not matter if it has a structure that combines ¥A material.
また本例では２木の超伝導配線を近接して設置した場合
を示したが、更に多数の超伝導配線を近接して設置する
ことも可能である。その場合一部の配線のみを本発明の
超伝導配線と腰 池を従来の超伝導配線かもしくは常伝
導配線とした場合にも本発明の超伝導配線は有効である
。また本例では２木の配線として全く同一の材料を使用
した同一構造を持つ物を使用したが、材料もしくは構造
の異なった物にすることも勿論可能である。Further, although this example shows a case where two superconducting wires are installed close to each other, it is also possible to install a larger number of superconducting wires close to each other. In that case, the superconducting wiring of the present invention is also effective when only a part of the wiring is the superconducting wiring of the present invention and the wire is a conventional superconducting wiring or a normal conducting wiring. Further, in this example, two wires having the same structure and made of the same material are used, but it is of course possible to use wires of different materials or structures.
（実施例 ２）
第２図本発明にかかる超伝導配線の第２の例を示す断面
図である。本例では表面に絶縁膜を堆積した半導体基板
上に薄膜状の超伝導配線８を形成している。図では省略
されているが半導体基板５の内部および表面には半導体
装置として必要な構造の内配線を除く部分と常伝導配線
とが形成されており、絶縁膜の必要な位置にはそれらの
構造と超伝導配線とを電気的に接続するためのコンタク
トホールが設けられている。(Example 2) FIG. 2 is a sectional view showing a second example of superconducting wiring according to the present invention. In this example, a thin film superconducting wiring 8 is formed on a semiconductor substrate on which an insulating film is deposited. Although not shown in the figure, normal conduction wiring is formed inside and on the surface of the semiconductor substrate 5, except for internal wiring of the structure necessary for a semiconductor device, and normal conduction wiring is formed at the necessary position of the insulating film. A contact hole is provided for electrically connecting the superconducting wiring and the superconducting wiring.
下地膜７は、超伝導線８ａを形成する材料のグレイン構
造を整え超伝導特性を高めるために使用されているが、
絶縁膜６として同様の作用を持つ材料を選ぶか、もしく
は堆積技術を改善する事にによって省略することも可能
である。また超伝導被覆層８ｃの堆積条件によっては中
間層８ｂも下地膜７と同様の効果を持つ物質の膜とする
か、もしくは少なくともその様な物質を含む複数の物質
を組み合わせた複合膜とする必要がある。The base film 7 is used to adjust the grain structure of the material forming the superconducting wire 8a and improve the superconducting properties.
It is also possible to omit the insulating film 6 by selecting a material that has a similar effect or by improving the deposition technique. Furthermore, depending on the deposition conditions of the superconducting coating layer 8c, the intermediate layer 8b may also need to be a film made of a substance that has the same effect as the base film 7, or at least a composite film made of a combination of multiple substances containing such a substance. There is.
なお第２図では２本の超伝導配線を平行に形成した例を
示したが、さらに多数の超伝導配線を形成する場合にも
、平行に配置されていない場合にも本発明の超伝導配線
が有効であることは言うまでもない。また第２図で・は
２本の超伝導配線が同一平面上に形成されているが、そ
の−Ｌ下に絶縁層を介してさらに配線を形成し、２層も
しくはそれ以上の配線層を持つ構造とすることも可能で
ある。Although FIG. 2 shows an example in which two superconducting wires are formed in parallel, the superconducting wires of the present invention can also be used when a larger number of superconducting wires are formed or when they are not arranged in parallel. Needless to say, it is effective. In addition, in Figure 2, two superconducting wires are formed on the same plane, but an additional wire is formed below -L through an insulating layer, resulting in two or more wiring layers. It is also possible to have a structure.
その場合には全ての配線層に本発明の超伝導配線を採用
することも、一部の１ごにのみ採用し、池の層には従来
の超伝導配線もしくは常伝導配線を採用することも可能
である。In that case, the superconducting wiring of the present invention may be used for all wiring layers, or it may be used only for some layers, and conventional superconducting wiring or normal conducting wiring may be used for the layer. It is possible.
なお第２図では半導体を基板として半導体装置の配線に
本発明の超伝導配線を使用した例を示したが、プリント
基板等、他の分野においても本発明の超伝導配線が有効
であることは言うまでもない。Although FIG. 2 shows an example in which the superconducting wiring of the present invention is used in the wiring of a semiconductor device using a semiconductor as a substrate, the superconducting wiring of the present invention is also effective in other fields such as printed circuit boards. Needless to say.
（実施例 ３）
第３図本発明にかかる超伝導配線の第３の例を示す断面
図である。本例では実施例２の場合と同様に超伝導配線
が半導体基板ｔに形成されているが、実施例２の場合は
中間層８ｂおよび超伝導被覆層８Ｃが超伝導線８ａの全
面を被覆しているのに対して、本例では上面および側面
のみを被覆している。このため超伝導線８ａを流れる電
流によって発生する磁場は完全には遮断されず、それが
隣接する超伝導配線に影響を与えることを完全に防Ｉヒ
することはてきない。しかし少なくとも従来の超伝導配
線の場合に比較すればその影響は低減され、配線の配置
によっては実施例２の場合に近い密度の電流を超伝導状
態で流すことが可能になる場合も有る。(Example 3) FIG. 3 is a sectional view showing a third example of superconducting wiring according to the present invention. In this example, superconducting wiring is formed on the semiconductor substrate t as in Example 2, but in Example 2, the intermediate layer 8b and the superconducting coating layer 8C cover the entire surface of the superconducting wire 8a. In contrast, in this example, only the top and side surfaces are covered. Therefore, the magnetic field generated by the current flowing through the superconducting wire 8a is not completely blocked, and it is not possible to completely prevent the magnetic field from affecting adjacent superconducting wires. However, at least compared to the case of conventional superconducting wiring, this effect is reduced, and depending on the wiring arrangement, it may be possible to flow a current with a density close to that in the case of Example 2 in a superconducting state.
第３図に示した様な超伝導配線は例えは第４図に示され
た様な工程によって作製される。ただし第４１ｍでは半
導体基板としてシリコン（以下Ｓ１と記す）基板な、絶
縁膜として酸化シリコン（以下５Ｉ０２と記す）膜を使
用し、超伝導線および超伝導被覆層にＹ−Ｂａ−Ｃｕ−
０系セラミツク膜を使用して、下地膜および中間膜に白
金膜を使用して作製した例を示す。A superconducting wiring as shown in FIG. 3 is fabricated, for example, by a process as shown in FIG. However, in the 41st m, a silicon (hereinafter referred to as S1) substrate is used as the semiconductor substrate, a silicon oxide (hereinafter referred to as 5I02) film is used as the insulating film, and Y-Ba-Cu-
An example will be shown in which a 0-series ceramic film is used and a platinum film is used as the base film and intermediate film.
まず、配線以外の半導体装置として必要な構造の作製を
終えたシリコン基板９上に５Ｉ０２膜ＩＯを堆積し必要
な部分に超伝導配線と電気的に接続するためのコンタク
トホール（本図では省略されている）を形成した後に、
白金膜１１およびＹ−Ｂ ａ −Ｃｕ −０系セラミツ
ク膜１２を、たとえばスパッタ法によってそれぞれ１１
００ｎおよび７００ ｎ ＩＴ１程度の厚さに堆積する
（第４図（Ａ））。First, a 5I02 film IO is deposited on the silicon substrate 9 on which the structures necessary for the semiconductor device other than the wiring have been fabricated, and contact holes (not shown in this figure) for electrically connecting with the superconducting wiring are formed in the necessary parts. After forming the
The platinum film 11 and the Y-B a -Cu-0 ceramic film 12 are formed by sputtering, for example.
It is deposited to a thickness of about 00n and 700n IT1 (FIG. 4(A)).
次にフォトリソグラフィーによってパターン形成を行な
ったレジス）１３をマスクとして不要な部分のＹ−Ｂａ
−ＣＩＪ−０系セラミツク膜および白金膜を食刻し、Ｙ
−Ｂａ−Ｃ＋＋−０系セラミツク線１４を形成する（第
４図（Ｂ））。続いて再び白金膜１５およびＹ −Ｂ
ａ −ＣＩＩ −０系セラミツク膜１６をそれぞれ５０
および１１００ｎ程度の厚さに堆積しく第４図（Ｃ））
、重役に不要部分の食刻を行なう（第４図（Ｄ））。こ
こで、１／Ｌ。Next, using the resist (13) patterned by photolithography as a mask, Y-Ba is removed from unnecessary areas.
- Etching the CIJ-0 series ceramic film and platinum film, and
-Ba-C++-0 ceramic wire 14 is formed (FIG. 4(B)). Subsequently, the platinum film 15 and Y-B
a-CII-0 ceramic film 16, 50 each
(Fig. 4(C))
, etching out unnecessary parts of the executive (Figure 4 (D)). Here, 1/L.
１５．１６はそれぞれ第３図の８ ＣＴ ８ ｂ、８
：Ｌを示す。15.16 are 8 CT 8 b and 8 in Figure 3, respectively.
: Indicates L.
発明の効果
本発明による超伝導配線は以上のような構成によりなる
ものであり、複数の超伝導配線を近接して配置した状態
で使用した場合にも、孤ヴした状態で場合に比較して超
伝導状態で流すことができる電流密度の減少がまったく
生じないかもしくは少なくとも軽減される。Effects of the Invention The superconducting wiring according to the present invention has the above-described configuration, and even when a plurality of superconducting wirings are used in close proximity, compared to when they are used in isolation, There is no reduction in the current density that can be passed in the superconducting state, or at least it is reduced.
従って本発明にかかる超伝導配線は極めて産業上値１１
σの高いものである。Therefore, the superconducting wiring according to the present invention has an extremely industrial value of 11
It has a high σ.
かる超伝導配線の第１、第２および第３の実施例を示す
断面図、第４図は第３図の超伝導配線を作製するための
工程の１例の断面図、第５図は従来の超伝導配線の１例
を示す断面図である。
ｌ・・・第１超伝導配線、ｌａ・・・超伝導線、ｌｂ・
・・中間層、ｌｃ・・・超伝導皮膜層、１ｄ・・・シー
ス、２・・・第２超伝導配線、２ａ・・・超伝導線、２
ｂ・・・中間層、２ｃ・・・超伝導皮膜層、２ｄ・・・
シース、８・・・超伝導配線、８ａ・・・超伝導線、８
ｂ・・・中間層、８ｃ・・・超伝導被覆層、９・・・Ｓ
１基板、１０・・・５ＩＯ２膜、１１・・・白金膜、１
２−・−Ｙ−Ｂａ−Ｃｕ−０系セラミツク膜、 １３・
・・レジスト、 １４・＝Ｙ−Ｂａ−Ｃ１１−Ｏ系セラ
ミック線、１５・・・白金膜、１６・・・Ｙ−Ｂａ−Ｃ
ｕ−０系セラミツク膜、１７・・・超伝導配線。
代理人の氏名 弁理士 中尾敏男 はか１名第２図
７下地狭
第３図
７下地瑛
第１図
第４図
第５図
産召イ云導西已線
７下地膜4 is a sectional view showing an example of the process for producing the superconducting wiring shown in FIG. 3, and FIG. FIG. 2 is a cross-sectional view showing an example of superconducting wiring. l...first superconducting wiring, la...superconducting wire, lb.
...Intermediate layer, lc...Superconducting film layer, 1d...Sheath, 2...Second superconducting wiring, 2a...Superconducting wire, 2
b... Intermediate layer, 2c... Superconducting film layer, 2d...
Sheath, 8... Superconducting wiring, 8a... Superconducting wire, 8
b...Intermediate layer, 8c...Superconducting coating layer, 9...S
1 substrate, 10...5 IO2 film, 11... platinum film, 1
2-.-Y-Ba-Cu-0 ceramic film, 13.
...Resist, 14.=Y-Ba-C11-O ceramic wire, 15.. Platinum film, 16.. Y-Ba-C
u-0 series ceramic film, 17... superconducting wiring. Name of agent: Patent attorney Toshio Nakao (1 person) Figure 2, 7 Shimochisa, Figure 3, 7 Shimoji Ei, Figure 1, Figure 4, Figure 5
Claims (1)
する中間層と、さらにこの線表面全体かもしくは一部を
被覆する超伝導の被覆層を有し、前記超伝導線および超
伝導被覆層が超伝導状態にあり、前記中間層が常伝導状
態にある温度で使用することを特徴とする超伝導配線。The superconducting wire and the superconducting coating have a superconducting wire, an intermediate layer covering the entire surface or a portion of the wire surface, and a superconducting coating layer covering the entire surface or a portion of the wire surface. A superconducting interconnect characterized in that it is used at a temperature at which the layer is in a superconducting state and the intermediate layer is in a normal conducting state.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62288754A JPH01130421A (en) | 1987-11-16 | 1987-11-16 | Superconductive wiring |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62288754A JPH01130421A (en) | 1987-11-16 | 1987-11-16 | Superconductive wiring |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01130421A true JPH01130421A (en) | 1989-05-23 |
Family
ID=17734272
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62288754A Pending JPH01130421A (en) | 1987-11-16 | 1987-11-16 | Superconductive wiring |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01130421A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014141777A1 (en) * | 2013-03-15 | 2014-09-18 | 古河電気工業株式会社 | Method for manufacturing superconducting conductor and superconducting conductor |
-
1987
- 1987-11-16 JP JP62288754A patent/JPH01130421A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014141777A1 (en) * | 2013-03-15 | 2014-09-18 | 古河電気工業株式会社 | Method for manufacturing superconducting conductor and superconducting conductor |
| JPWO2014141777A1 (en) * | 2013-03-15 | 2017-02-16 | 古河電気工業株式会社 | Superconducting conductor manufacturing method and superconducting conductor |
| US10096403B2 (en) | 2013-03-15 | 2018-10-09 | Furukawa Electric Co., Ltd. | Method for producing superconductive conductor and superconductive conductor |
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