JPH0112422Y2 - - Google Patents
Info
- Publication number
- JPH0112422Y2 JPH0112422Y2 JP1980103562U JP10356280U JPH0112422Y2 JP H0112422 Y2 JPH0112422 Y2 JP H0112422Y2 JP 1980103562 U JP1980103562 U JP 1980103562U JP 10356280 U JP10356280 U JP 10356280U JP H0112422 Y2 JPH0112422 Y2 JP H0112422Y2
- Authority
- JP
- Japan
- Prior art keywords
- ceramic substrate
- lead terminal
- lead
- electrode
- stress concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 57
- 238000000605 extraction Methods 0.000 claims description 39
- 238000000926 separation method Methods 0.000 claims description 10
- 239000003990 capacitor Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【考案の詳細な説明】
本考案は薄いセラミツク基板を有する電子部品
のリード端子引出し電極構造に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a lead terminal extraction electrode structure for an electronic component having a thin ceramic substrate.
従来、この種の電子部品、例えば第１図に示す
ように、セラミツク基板１に２つの二端子型の共
振子２および３を形成し、リード端子４と５との
間およびリード端子４と６との間に夫々上記共振
子２および３を接続した電子部品においては、第
２図に示すように、セラミツク基板１のコーナ部
７および８の表面に夫々一定幅を有する引出し電
極９および１０を形成し、これら引出し電極９お
よび１０に上記共振子２の電極２ａおよび共振子
３の電極３ａを夫々接続する一方、上記コーナ部
７もしくは８から一定の距離をおいて裏面に一
定幅の引出し電極１１を形成し、該引出し電極１
１に上記共振子２の電極２ｂおよび共振子３の電
極３ｂを接続し、上記の三つの引出し電極９，１
０および１１に夫々リード端子５，６および４を
半田付けするようにしていた（たとえば、実開昭
47−4833号公報、実開昭48−55744号公報参照）。 Conventionally, this type of electronic component, for example, as shown in FIG. In the electronic component in which the resonators 2 and 3 are connected between the resonators 2 and 3, as shown in FIG. The electrodes 2a of the resonator 2 and the electrodes 3a of the resonator 3 are connected to these extraction electrodes 9 and 10, respectively, while an extraction electrode of a constant width is formed on the back surface at a certain distance from the corner part 7 or 8. 11, and the extraction electrode 1
1, the electrode 2b of the resonator 2 and the electrode 3b of the resonator 3 are connected to the three extraction electrodes 9, 1.
Lead terminals 5, 6 and 4 were soldered to terminals 0 and 11, respectively (for example, the
47-4833, Utility Model Application Publication No. 48-55744).
しかしながら、上記のように薄いセラミツク基
板１にリード端子４，５および６を半田付けして
固定した状態で、リード端子４，６からセラミツ
ク基板１のコーナ部に物理的な力が加わると、セ
ラミツク基板１には、第２図に二点鎖線で示すよ
うに、上記コーナ部７もしくは８を中心とする大
略一定の半径を有する円周の位置に応力が集中し
て小さなヒビ割れ（マイクロクラツク）が発生
し、共振子２の電極２ａと引出し電極９とを接続
する接続電極１２もしくは共振子３の電極３ａと
引出し電極１０とを接続する接続電極１３が断線
する等の事故が発生する問題があつた。 However, when the lead terminals 4, 5, and 6 are soldered and fixed to the thin ceramic substrate 1 as described above, if a physical force is applied from the lead terminals 4, 6 to the corner of the ceramic substrate 1, the ceramic As shown by the two-dot chain line in FIG. 2, stress is concentrated on the substrate 1 at a circumferential position having an approximately constant radius centered on the corner portion 7 or 8, resulting in small cracks (microcracks). ) occurs, causing an accident such as disconnection of the connection electrode 12 connecting the electrode 2a of the resonator 2 and the extraction electrode 9 or the connection electrode 13 connecting the electrode 3a of the resonator 3 and the extraction electrode 10. It was hot.
本考案はマイクロクラツクが発生し易いセラミ
ツク基板を有する電子部品における上記問題を解
消すべくなされたものであつて、セラミツク基板
の応力集中個所におけるマイクロクラツクの発生
がなく、信頼性および製造時の良品率が高い電子
部品のリード端子引出し電極構造を提供すること
を目的としている。 The present invention was developed to solve the above-mentioned problems in electronic components having ceramic substrates where microcracks are likely to occur. The purpose of the present invention is to provide a lead terminal extraction electrode structure for electronic components that has a high yield rate.
このため、本考案は、大略四角状のセラミツク
基板を有し、このセラミツク基板のリード端子引
出し辺の端部に位置する上記セラミツク基板のコ
ーナ部の表面に設けたリード端子の引出し電極
と、該引出し電極から一定の間隔をおいて裏面に
設けた引出し電極とを有する電子部品において、
上記セラミツク基板表面側の引出し電極はセラ
ミツク基板の上記リード端子引出し辺にほぼ平行
でリード端子からセラミツク基板に作用するスト
レスによりセラミツク基板の上記コーナ部を中心
とする大略一定の半径の位置に円周状に発生する
上記セラミツク基板の応力集中ラインに交差する
辺と、上記コーナ部からこの応力集中ラインにほ
ぼ半径の方向に交差する斜辺とを有する大略直角
三角形状に形成される一方、上記セラミツク基板
裏面側の引出し電極はセラミツク基板表面側の上
記引出し電極の斜辺とほぼ平行で該斜辺との間に
上記セラミツク基板を介して略一定間隔の分離帯
を画成するように上記応力集中ラインと交差する
辺を有し、上記リード端子引出し辺に向かつて大
略末広がり形状に形成されていることを特徴とし
ている。 For this reason, the present invention has a generally square ceramic substrate, and includes a lead terminal extraction electrode provided on the surface of the corner portion of the ceramic substrate located at the end of the lead terminal extraction side of the ceramic substrate; In an electronic component having an extraction electrode provided on the back surface at a constant distance from the extraction electrode, the extraction electrode on the surface side of the ceramic substrate is approximately parallel to the lead terminal extraction side of the ceramic substrate and acts from the lead terminal to the ceramic substrate. The side that intersects the stress concentration line of the ceramic substrate, which is generated circumferentially at a position of approximately constant radius around the corner of the ceramic substrate due to the stress caused by the The lead electrode on the back side of the ceramic substrate is approximately parallel to the hypotenuse of the lead electrode on the front side of the ceramic substrate, and the ceramic plate is formed between the hypotenuse and the lead electrode on the back side of the ceramic substrate. It is characterized in that it has sides that intersect the stress concentration line so as to define separation zones at approximately constant intervals through the substrate, and is formed in a shape that widens toward the lead terminal extraction side.
以下、本考案の実施例を示す図面を参照して本
考案の実施例を詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to drawings showing embodiments of the present invention.
本考案を第１図の電子部品に適用した実施例を
第３図に示す。 FIG. 3 shows an embodiment in which the present invention is applied to the electronic component shown in FIG. 1.
上記第３図の電子部品のリード端子引出し電極
構造は、第２図の電子部品の引出し電極９，１０
および１１を次にのべるような形状の引出し電極
９′，１０′および１１′としたものである。 The lead terminal extraction electrode structure of the electronic component shown in FIG.
and 11 are lead electrodes 9', 10' and 11' having shapes as shown below.
上記セラミツク基板１の表面側の引出し電極
９′はセラミツク基板１のリード端子４，５およ
び６の引出し辺にほぼ平行でリード端子５からセ
ラミツク基板１に作用するストレスによりセラミ
ツク基板１の１つのコーナ部を中心とする大略一
定の半径の位置に円周状に発生する上記セラミツ
ク基板１の応力集中ライン（二点鎖線で示す。）
に交差する辺と、上記コーナ部からこの応力集中
ラインにほぼ半径の方向に交差する斜辺とを有す
る大略直角三角形状に形成される。また、上記セ
ラミツク基板１裏面側の引出し電極１１′はセラ
ミツク基板１の表面側の上記引出し電極９′の斜
辺とほぼ平行で該斜辺との間にセラミツク基板１
を介して略一定間隔を有する分離帯１４を画成す
るように上記応力集中ラインと交差する辺を有す
る。 The lead-out electrode 9' on the front side of the ceramic substrate 1 is approximately parallel to the lead-out sides of the lead terminals 4, 5, and 6 of the ceramic board 1, and the lead-out electrode 9' is located at one corner of the ceramic board 1 due to the stress acting on the ceramic board 1 from the lead terminal 5. A stress concentration line (indicated by a two-dot chain line) of the ceramic substrate 1 that occurs circumferentially at a position with a substantially constant radius around the center.
and a hypotenuse that intersects the stress concentration line in a radial direction from the corner. Further, the extraction electrode 11' on the back side of the ceramic substrate 1 is approximately parallel to the oblique side of the extraction electrode 9' on the front side of the ceramic substrate 1, and the ceramic substrate 1
It has sides that intersect with the stress concentration line so as to define separation zones 14 having substantially constant intervals therebetween.
これら引出し電極９′と１１′の境界が画成する
一定幅の分離帯１４は、セラミツク基板１のコー
ナ部７および８を通るセラミツク基板１のリード
端子引出し辺となす角度θが90゜よりも大きく、
上記コーナ部７を中心とする大略一定の半径（＜
）を有する円周上に位置する上記応力集中ライ
ンにその上記半径方向から分離帯１４が交差す
る。 A separation band 14 of a constant width defined by the boundary between these lead-out electrodes 9' and 11' has an angle θ between the corners 7 and 8 of the ceramic substrate 1 and the lead-out side of the lead terminal of the ceramic substrate 1, which is less than 90°. big,
A substantially constant radius centered on the corner portion 7 (<
) The separation zone 14 intersects the stress concentration line located on the circumference from the radial direction.
上記セラミツク基板１の表面側のいま一つの引
出し電極１０′についても、セラミツク基板１の
リード端子４，５および６の引出し辺にほぼ平行
でリード端子６からセラミツク基板１に作用する
ストレスによりセラミツク基板１のいま一つのコ
ーナ部を中心とする大略一定の半径の位置に円周
状に発生する上記セラミツク基板１の応力集中ラ
イン（二点鎖線で示す。）に交差する辺と、上記
コーナ部からこの応力集中ラインにほぼ半径の方
向に交差する斜辺とを有する大略直角三角形状に
形成される。また、上記セラミツク基板１の裏面
側の引出し電極１１′はセラミツク基板１表面側
の上記引出し電極１０′の斜辺とほぼ平行で該斜
辺との間にセラミツク基板１を介して略一定間隔
を有する分離帯１５を画成するように上記応力集
中ラインと交差する辺を有する。これにより、上
記引出し電極１１′は上記リード端子引出し辺に
向かつて大略末広がり状に形成される。 Regarding the other lead electrode 10' on the front surface side of the ceramic substrate 1, the stress acting on the ceramic substrate 1 from the lead terminal 6 almost parallel to the lead-out sides of the lead terminals 4, 5, and 6 of the ceramic substrate 1 causes the ceramic substrate to be damaged. A side that intersects with a stress concentration line (indicated by a two-dot chain line) of the ceramic substrate 1 that occurs circumferentially at a position of an approximately constant radius centered on another corner of the ceramic substrate 1, and a side that extends from the corner of the ceramic substrate 1. It is formed into a substantially right triangular shape having a hypotenuse that intersects this stress concentration line in a substantially radial direction. Further, the extraction electrode 11' on the back side of the ceramic substrate 1 is approximately parallel to the oblique side of the extraction electrode 10' on the front side of the ceramic substrate 1, and there is a separation electrode 11' with a substantially constant interval between it and the oblique side with the ceramic substrate 1 interposed therebetween. It has sides that intersect the stress concentration line so as to define a band 15. As a result, the lead-out electrode 11' is formed in a substantially widening shape toward the lead terminal lead-out side.
引出し電極１０′および１１′の上記境界が形成
する一定幅の分離帯１５とセラミツク基板１の上
記リード端子引出し辺とがなす角度θが90゜より
も大きく、セラミツク基板１のコーナ部８を中心
とする上記と同様の円周上に位置する応力の集中
ラインにその上記半径方向から分離帯１５が交差
する。 The angle θ formed by the separation zone 15 of a constant width formed by the boundaries of the extraction electrodes 10' and 11' and the lead terminal extraction side of the ceramic substrate 1 is greater than 90 degrees, and the corner portion 8 of the ceramic substrate 1 is centered at the angle θ. The separation zone 15 intersects the stress concentration line located on the same circumference as above from the radial direction.
引出し電極９′，１０′および１１′の形状を上
記形状とすれば、セラミツク基板１のコーナ部７
側に関し、応力集中ラインをほぼ直角に横切つ
て、セラミツク基板１の表面側および裏面側か
ら、上記応力集中ラインの内側の領域と外側の領
域とが必ず引出し電極９′および１１′によりブリ
ツジされる。同様に、セラミツク基板１のいま一
つのコーナ部８に関し、いま一つの応力集中ライ
ンをほぼ直角に横切つて、セラミツク基板１の表
面側および裏面側から、上記応力集中ラインの内
側の領域と外側の領域とが必ず引出し電極１０′
および１１′によりブリツジされる。これにより、
セラミツク基板１の上記各応力集中ラインに集中
する応力は、これら引出し電極９′，１０′および
１１′の電極膜と、リード端子５、６および４の
半田付時に上記電極膜に付着する半田に分散さ
れ、マイクロクラツクの発生および拡大が防止さ
れる。 If the shape of the extraction electrodes 9', 10' and 11' is as described above, the corner portion 7 of the ceramic substrate 1
Regarding the side, the area inside and the area outside the stress concentration line are always bridged by the extraction electrodes 9' and 11' from the front side and the back side of the ceramic substrate 1, crossing the stress concentration line at almost right angles. Ru. Similarly, regarding another corner portion 8 of the ceramic substrate 1, cross the other stress concentration line at a nearly right angle and start from the front side and the back side of the ceramic substrate 1. area is always the extraction electrode 10'
and 11'. This results in
The stress concentrated on each stress concentration line of the ceramic substrate 1 is caused by the electrode films of these extraction electrodes 9', 10', and 11', and by the solder that adheres to the electrode films when the lead terminals 5, 6, and 4 are soldered. dispersed, preventing the generation and spread of microcracks.
なお、上記実施例において、分離帯１４および
１５の幅ｄはできるだけ小さくすることが、応力
集中個所の強度を高めるうえから好ましいが、上
記幅をあまり小さくすると、引出し電極９′と１
１′との間の容量および引出し電極１０′と１１′
との間の容量が大きくなる。 In the above embodiment, it is preferable to make the width d of the separation bands 14 and 15 as small as possible in order to increase the strength of stress concentration areas. However, if the width is made too small, the lead electrodes 9' and 1
1' and the extraction electrodes 10' and 11'
The capacity between the
なお、引出し電極１１′の高さh1を引出し電極
９′もしくは１０′の高さh2よりも高くし、半田を
盛ることによつて補強範囲を拡大してもよい。 Note that the reinforcing range may be expanded by making the height h 1 of the extraction electrode 11' higher than the height h 2 of the extraction electrode 9' or 10' and applying solder.
本考案は、ワレやクラツクが発生しやすいセラ
ミツク基板を有するすべての電子部品に適用可能
である。従つて、本考案は、混成集積回路、トリ
マコンデンサ、複合抵抗器、もしくは複合コンデ
ンサ等の電子部品にも適応することができる。 The present invention is applicable to all electronic components having ceramic substrates that are prone to cracks and cracks. Therefore, the present invention can also be applied to electronic components such as hybrid integrated circuits, trimmer capacitors, composite resistors, or composite capacitors.
以上詳細に説明したことからも明らかなよう
に、本考案は、セラミツク基板の応力集中ライン
をほぼ直角に横切つて、セラミツク基板の表面側
および裏面側から、応力集中ラインの内側の領域
と外側の領域とが必ず引出し電極によりブリツジ
されるので、セラミツク基板の応力集中ラインに
集中する応力が引出し電極のブリツジ部分で分散
され、セラミツク基板のヒビ割れによるマイクロ
クラツク等の発生が防止され、電子部品の信頼性
が向上するとともに、生産時における良品率も向
上する。 As is clear from the above detailed explanation, the present invention crosses the stress concentration line of the ceramic substrate almost at right angles, and from the front and back sides of the ceramic substrate, the area inside the stress concentration line and the area outside the stress concentration line are Since the region of This improves the reliability of parts and improves the rate of non-defective products during production.
第１図は２つの共振子を有する電子部品の等価
回路図、第２図は第１図の等価回路を有する電子
部品のリード端子引出し電極構造を示す平面図、
第３図は本考案に係る電子部品のリード端子引出
し電極構造を示す平面図である。
１……セラミツク基板、２，３……共振子、２
ａ，５ｂ，３ａ，３ｂ……電極、４，５，６……
リード端子、７，８……コーナ部、９，９′，１
０，１０′，１１，１１′……引出し電極、１２，
１３……接続電極、１４，１５……分離帯。
FIG. 1 is an equivalent circuit diagram of an electronic component having two resonators, FIG. 2 is a plan view showing a lead terminal extraction electrode structure of an electronic component having the equivalent circuit of FIG. 1,
FIG. 3 is a plan view showing a lead terminal extraction electrode structure of an electronic component according to the present invention. 1... Ceramic substrate, 2, 3... Resonator, 2
a, 5b, 3a, 3b... electrode, 4, 5, 6...
Lead terminal, 7, 8... Corner part, 9, 9', 1
0, 10', 11, 11'... Extraction electrode, 12,
13... Connection electrode, 14, 15... Separation band.
Claims (1)
ミツク基板のリード端子引出し辺の端部に位置す
る上記セラミツク基板のコーナ部の表面に設けた
リード端子の引出し電極と、該引出し電極から一
定の間隔をおいて裏面に設けた引出し電極とを有
する電子部品において、 上記セラミツク基板表面側の引出し電極はセラ
ミツク基板の上記リード端子引出し辺にほぼ平行
でリード端子からセラミツク基板に作用するスト
レスによりセラミツク基板の上記コーナ部を中心
とする大略一定の半径の位置に円周状に発生する
上記セラミツク基板の応力集中ラインに交差する
辺と、上記コーナ部からこの応力集中ラインにほ
ぼ半径の方向に交差する斜辺とを有する大略直角
三角形状に形成される一方、上記セラミツク基板
裏面側の引出し電極はセラミツク基板表面側の上
記引出し電極の斜辺とほぼ平行で該斜辺との間に
上記セラミツク基板を介して略一定間隔の分離帯
を画成するように上記応力集中ラインと交差する
辺を有し、上記リード端子引出し辺に向かつて大
略末広がり形状に形成されていることを特徴とす
る電子部品のリード端子引出し構造。[Claims for Utility Model Registration] A generally square ceramic substrate, and a lead terminal extraction electrode provided on the surface of a corner portion of the ceramic substrate located at the end of the lead terminal extraction side of the ceramic substrate; In an electronic component having an extraction electrode provided on the back surface at a constant distance from the extraction electrode, the extraction electrode on the front side of the ceramic substrate is substantially parallel to the lead terminal extraction side of the ceramic substrate, and is connected from the lead terminal to the ceramic substrate. The side that intersects the stress concentration line of the ceramic substrate, which is generated circumferentially at a position of approximately constant radius around the corner of the ceramic substrate due to the applied stress, and the side that intersects the stress concentration line from the corner of the ceramic substrate approximately to this stress concentration line. The lead electrode on the back side of the ceramic substrate is approximately parallel to the hypotenuse of the lead electrode on the front side of the ceramic substrate, and the It is characterized in that it has a side that intersects the stress concentration line so as to define separation zones at approximately constant intervals through the ceramic substrate, and is formed in a shape that widens toward the lead terminal extraction side. Lead terminal drawer structure for electronic components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980103562U JPH0112422Y2 (en) | 1980-07-21 | 1980-07-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1980103562U JPH0112422Y2 (en) | 1980-07-21 | 1980-07-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5726121U JPS5726121U (en) | 1982-02-10 |
| JPH0112422Y2 true JPH0112422Y2 (en) | 1989-04-11 |
Family
ID=29464953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1980103562U Expired JPH0112422Y2 (en) | 1980-07-21 | 1980-07-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0112422Y2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS474833U (en) * | 1971-02-05 | 1972-09-13 | ||
| JPS4855744U (en) * | 1971-10-28 | 1973-07-17 |
-
1980
- 1980-07-21 JP JP1980103562U patent/JPH0112422Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5726121U (en) | 1982-02-10 |
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